-
Effects of altermagnetic order, strain and doping on the optical and vibrational properties of RuO$_2$
Authors:
Darshana Wickramaratne,
Marc Currie,
Shelby S. Fields,
Cory D. Cress,
Steven P. Bennett
Abstract:
RuO$_2$, one of the most widely studied transition metal oxides, was recently predicted to host a novel form of collinear magnetic order referred to as altermagnetism. In this study we combine experiment (reflectance, transmittance, ellipsometry and Raman measurements) and first-principles calculations to elucidate the potential role of altermagnetic order, strain and doping on the optical and vib…
▽ More
RuO$_2$, one of the most widely studied transition metal oxides, was recently predicted to host a novel form of collinear magnetic order referred to as altermagnetism. In this study we combine experiment (reflectance, transmittance, ellipsometry and Raman measurements) and first-principles calculations to elucidate the potential role of altermagnetic order, strain and doping on the optical and vibrational properties of RuO$_2$ grown on TiO$_2$ (001), (101) and (110) substrates. The combination of experiment and theory in this study surprisingly indicates RuO$_2$ is in fact best described if one assumes the nonmagnetic state. Calculations of the altermagnetic state leads to poor agreement with the measured optical and vibrational properties of RuO$_2$.
△ Less
Submitted 12 February, 2025;
originally announced February 2025.
-
Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films
Authors:
Sara Bey,
Shelby S. Fields,
Nicholas G. Combs,
Bence G. Márkus,
Dávid Beke,
Jiashu Wang,
Anton V. Ievlev,
Maksym Zhukovskyi,
Tatyana Orlova,
László Forró,
Steven P. Bennett,
Xinyu Liu,
Badih A. Assaf
Abstract:
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this…
▽ More
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic α-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to α-MnTe grown on GaAs and is absent in α-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.
△ Less
Submitted 6 September, 2024;
originally announced September 2024.
-
Ferroelectricity in Hafnia Controlled via Surface Electrochemical State
Authors:
Kyle P. Kelley,
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Shelby S. Fields,
Samantha T. Jaszewski,
Takanori Mimura,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions s…
▽ More
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.
△ Less
Submitted 25 July, 2022;
originally announced July 2022.
-
Exploring leakage in dielectric films via automated experiment in scanning probe microscopy
Authors:
Yongtao Liu,
Shelby S. Fields,
Takanori Mimura,
Kyle P. Kelley,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Usin…
▽ More
Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20 nm thick ferroelectric Hf0.54Zr0.48O2 film, where conductive spots disappear and reappear during continuous scanning. There are also new conductive spots that appear during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging.
△ Less
Submitted 18 November, 2021;
originally announced November 2021.
-
Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides
Authors:
Maria Gabriela Sales,
Samantha T. Jaszewski,
Shelby S. Fields,
Jon F. Ihlefeld,
Stephen J. McDonnell
Abstract:
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 an…
▽ More
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC surface leading to a high-quality and abrupt ferroelectric/TMDC interface. In this work, the thermal stability of this interface is explored by first depositing hafnium zirconium oxide (HZO) directly on geological MoS2 and as-grown WSe2, followed by sequential annealing in ultra-high vacuum (UHV) over a range of temperatures (400-800 °C), and examining the interface through X-ray photoelectron spectroscopy (XPS). We show that the nucleation and stability of HZO grown through atomic layer deposition (ALD) varied depending on functionalization of the TMDC, and the deposition conditions can cause tungsten oxidation in WSe2. It was observed that HZO deposited on non-functionalized MoS2 was unstable and volatile upon annealing, while HZO on functionalized MoS2 was stable in the 400-800 °C range. The HZO/WSe2 interface was stable until 700 °C, after which Se began to evolve from the WSe2. In addition, there is evidence of oxygen vacancies in the HZO film being passivated at high temperatures. Lastly, X-ray diffraction (XRD) was used to confirm crystallization of the HZO within the temperature range studied.
△ Less
Submitted 30 July, 2020;
originally announced July 2020.
