Showing 1–26 of 26 results for author: Feng, X -

Ultracompact 4H-silicon carbide optomechanical resonator with $f_m\cdot Q_m$ exceeding $10^{13}$ Hz

Authors: Yuncong Liu, Wenhan Sun, Hamed Abiri, Philip X. -L. Feng, Qing Li

Abstract: Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challen… ▽ More Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time. Based on a suspended $4.3$-$μ$m-radius microdisk, the SiC optomechanical resonator features low optical loss ($<1$ dB/cm), a high mechanical frequency $f_m$ of $0.95 \times 10^9$ Hz, a mechanical quality factor $Q_m$ of $1.92\times10^4$, and a footprint of $<1\times 10^{-5}$ mm$^2$. The corresponding $f_m\cdot Q_m$ product is estimated to be $1.82 \times 10^{13}$ Hz, which is among the highest reported values of optomechanical cavities tested in an ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 $μ$W, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform. △ Less

Submitted 11 May, 2025; originally announced May 2025.

Lithium niobate acoustic resonators operating beyond 900 $^\circ$C

Authors: Walter Gubinelli, Hasan Karaca, Ryan Tetro, Sariha N. Azad, Philip X. -L. Feng, Luca Colombo, Matteo Rinaldi

Abstract: In this paper, fundamental shear-horizontal SH0 mode Leaky Surface Acoustic Wave (LSAW) resonators on X-cut lithium niobate leveraging dense and robust electrodes such as gold and tungsten are demonstrated for extreme temperature operation in harsh environments. A novel post-processing approach based on in-band spurious mode tracking is introduced to enable reliable characterization under extreme… ▽ More In this paper, fundamental shear-horizontal SH0 mode Leaky Surface Acoustic Wave (LSAW) resonators on X-cut lithium niobate leveraging dense and robust electrodes such as gold and tungsten are demonstrated for extreme temperature operation in harsh environments. A novel post-processing approach based on in-band spurious mode tracking is introduced to enable reliable characterization under extreme parasitic loading during testing. Devices exhibit stable performance throughout multiple thermal cycles up to 1000 $^\circ$C, with an extrapolated electromechanical coupling coefficient kt2 = 25% and loaded quality factor Qp = 12 at 1000 $^\circ$C for tungsten devices, and kt2 = 17%, Qp = 100 at 900 $^\circ$C for gold devices. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Comments: 4 pages, 7 figures, Transducers25 Conference (Orlando)

Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet

Authors: S M Enamul Hoque Yousuf, Yunong Wang, Shreyas Ramachandran, John Koptur-Palenchar, Chiara Tarantini, Li Xiang, Stephen McGill, Dmitry Smirnov, Elton J. G. Santos, Philip X. -L. Feng, Xiao-Xiao Zhang

Abstract: The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical mo… ▽ More The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical motions can couple to a different type of magnetic structure, the non-collinear spin textures, which exhibit nanoscale spatial variations of spin (domain walls, skyrmions, etc.) and are promising candidates to realize high-speed computing devices. Here, we report the detection of collective spin texture dynamics with nanoelectromechanical resonators made of two-dimensional antiferromagnetic (AFM) MnPS3 with $10^{-9}$ strain sensitivity. By examining radio frequency mechanical oscillations under magnetic fields, new magnetic transitions were identified with sharp dips in resonant frequency. They are attributed to the collective AFM domain wall motions as supported by the analytical modeling of magnetostriction and large-scale spin-dynamics simulations. Additionally, an abnormally large modulation in the mechanical nonlinearity at the transition field infers a fluid-like response due to the ultrafast domain motion. Our work establishes a strong coupling between spin texture and mechanical dynamics, laying the foundation for electromechanical manipulation of spin texture and developing quantum hybrid devices. △ Less

Submitted 14 March, 2025; originally announced March 2025.

Aluminum Scandium Nitride as a Functional Material at 1000°C

Authors: Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X. -L. Feng, Mark Sheplak, Roozbeh Tabrizian

Abstract: Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and… ▽ More Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000°C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V at 800°C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient was calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700°C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement. △ Less

Submitted 22 October, 2024; originally announced October 2024.

Influences of modified Chaplygin dark fluid around a black hole

Authors: S. Zare, L. M. Nieto, F. Hosseinifar, X. -H. Feng, H. Hassanabadi

Abstract: In this work, we study a static, spherically charged AdS black hole within a modified cosmological Chaplygin gas (MCG), adhering to the calorific equation of state, as a unified dark fluid model of dark energy and dark matter. We explore the influence of model parameters on several characteristics of the MCG-motivated charged AdS black hole (MCG-AdSBH), including the geodesic structure and some as… ▽ More In this work, we study a static, spherically charged AdS black hole within a modified cosmological Chaplygin gas (MCG), adhering to the calorific equation of state, as a unified dark fluid model of dark energy and dark matter. We explore the influence of model parameters on several characteristics of the MCG-motivated charged AdS black hole (MCG-AdSBH), including the geodesic structure and some astrophysical phenomena such as null trajectories, shadow silhouettes, light deflection angles, and the determination of greybody bounds. We then discuss how the model parameters affect the Hawking temperature, remnant radius, and evaporation process of the MCG-AdSBH. Quasinormal modes are also investigated using the eikonal approximation method. Constraints on the MCG-AdSBH parameters are derived from EHT observations of M87* and Sgr A*, suggesting that MCG-AdSBH could be strong candidates for astrophysical black hole. △ Less

Submitted 11 August, 2024; v1 submitted 16 July, 2024; originally announced July 2024.

Comments: 8 pages, 11 figures, 4 tables

Journal ref: Phys. Lett. B 859 (2024) 139125

Parametric Frequency Divider based Ising Machines

Authors: Nicolas Casilli, Tahmid Kaisar, Luca Colombo, Siddhartha Ghosh, Philip X. -L. Feng, Cristian Cassella

Abstract: We report on a new class of Ising Machines (IMs) that rely on coupled parametric frequency dividers (PFDs) as macroscopic artificial spins. Unlike the IM counterparts based on subharmonic injection locking (SHIL), PFD IMs do not require strong injected continuous wave signals or applied DC voltages. Therefore, they show a significantly lower power consumption per spin compared to SHIL based IMs, m… ▽ More We report on a new class of Ising Machines (IMs) that rely on coupled parametric frequency dividers (PFDs) as macroscopic artificial spins. Unlike the IM counterparts based on subharmonic injection locking (SHIL), PFD IMs do not require strong injected continuous wave signals or applied DC voltages. Therefore, they show a significantly lower power consumption per spin compared to SHIL based IMs, making it feasible to accurately solve large scale combinatorial optimization problems (COPs) that are hard or even impossible to solve by using the current von Neumann computing architectures. Furthermore, using high quality (Q) factor resonators in the PFD design makes PFD IMs able to exhibit a nanoWatt level power per spin. Also, it remarkably allows a speed up of the phase synchronization among the PFDs, resulting in shorter time to solution and lower energy to solution despite the resonators' longer relaxation time. As a proof of concept, a 4 node PFD IM has been demonstrated. This IM correctly solves a set of MaxCut problems while consuming just 600 nanoWatts per spin. This power consumption is two orders of magnitude lower than the power per spin of state of the art SHIL based IMs operating at the same frequency. △ Less

Submitted 26 February, 2024; v1 submitted 13 December, 2023; originally announced December 2023.

2D Magnetic Heterostructures: Spintronics and Quantum Future

Authors: Bingyu Zhang, Pengcheng Lu, Roozbeh Tabrizian, Philip X. -L. Feng, Yingying Wu

Abstract: The discovery of two-dimensional (2D) magnetism within atomically thin structures derived from layered crystals has opened up a new realm for exploring magnetic heterostructures. This emerging field provides a foundational platform for investigating unique physical properties and exquisite phenomena at the nanometer and molecular/atomic scales. By engineering 2D interfaces using physical methods a… ▽ More The discovery of two-dimensional (2D) magnetism within atomically thin structures derived from layered crystals has opened up a new realm for exploring magnetic heterostructures. This emerging field provides a foundational platform for investigating unique physical properties and exquisite phenomena at the nanometer and molecular/atomic scales. By engineering 2D interfaces using physical methods and selecting interlayer interactions, we unlock the potential for extraordinary exchange dynamics. This potential extends to high-performance and high-density magnetic memory applications, as well as future advancements in neuromorphic and quantum computing. This review delves into recent advances in 2D magnets, elucidates the mechanisms behind 2D interfaces, and highlights the development of 2D devices for spintronics and quantum information. Particular focus is placed on 2D magnetic heterostructures with topological properties, promising for a resilient and low-error information system. Finally, we discuss the trends of 2D heterostructures for future electronics, considering the challenges and opportunities from physics, material synthesis, and technological prospective. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 22 pages, 4 figures

Nanomechanical Resonators: Toward Atomic Scale

Authors: Bo Xu, Pengcheng Zhang, Jiankai Zhu, Zuheng Liu, Alexander Eichler, Xu-Qian Zheng, Jaesung Lee, Aneesh Dash, Swapnil More, Song Wu, Yanan Wang, Hao Jia, Akshay Naik, Adrian Bachtold, Rui Yang, Philip X. -L. Feng, Zenghui Wang

Abstract: The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to new grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking fea… ▽ More The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to new grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes, and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained efforts have been devoted to creating mechanical devices toward the ultimate limit of miniaturization--genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines. △ Less

Submitted 20 November, 2022; v1 submitted 15 August, 2022; originally announced August 2022.

Comments: 41 pages, 30 figures

Journal ref: ACS Nano 2022

Young's Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators

Authors: Xu-Qian Zheng, Hongping Zhao, Zhitai Jia, Xutang Tao, Philip X. -L. Feng

Abstract: We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract Young's modulus in (100) plane, EY,(100) = 261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized by low-pressure chemical vapor deposition… ▽ More We report on the non-destructive measurement of Young's modulus of thin-film single crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanical structures by measuring their fundamental mode resonance frequencies. From the measurements, we extract Young's modulus in (100) plane, EY,(100) = 261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized by low-pressure chemical vapor deposition (LPCVD), and Young's modulus in [010] direction, EY,[010] = 245.8+/-9.2 GPa, for beta-Ga2O3 nanobelts mechanically cleaved from bulk beta-Ga2O3 crystal grown by edge-defined film-fed growth (EFG) method. The Young's moduli extracted directly on nanomechanical resonant device platforms are comparable to theoretical values from first-principle calculations and experimentally extracted values from bulk crystal. This study yields important quantitative nanomechanical properties of beta-Ga2O3 crystals, and helps pave the way for further engineering of beta-Ga2O3 micro/nanoelectromechanical systems (M/NEMS) and transducers. △ Less

Submitted 10 July, 2021; originally announced July 2021.

Comments: 11 Pages, 5 Figures, with 3 Pages of Supplementary Material and 1 Supplementary Figure

Journal ref: Applied Physics Letters, vol. 119, art. no. 013505 (2021)

Ultrawide Frequency Tuning of Atomic Layer van der Waals Heterostructure Electromechanical Resonators

Authors: Fan Ye, Arnob Islam, Teng Zhang, Philip X. -L. Feng

Abstract: We report on the experimental demonstration of atomically thin molybdenum disulfide (MoS2)-graphene van der Waals (vdW) heterostructure nanoelectromechanical resonators with ultrawide frequency tuning. With direct electrostatic gate tuning, these vdW resonators exhibit exceptional tunability, in general, Δf/f0 >200%, for continuously tuning the same device and the same mode (e.g., from ~23 to ~107… ▽ More We report on the experimental demonstration of atomically thin molybdenum disulfide (MoS2)-graphene van der Waals (vdW) heterostructure nanoelectromechanical resonators with ultrawide frequency tuning. With direct electrostatic gate tuning, these vdW resonators exhibit exceptional tunability, in general, Δf/f0 >200%, for continuously tuning the same device and the same mode (e.g., from ~23 to ~107MHz), up to Δf/f0 = 370%, the largest fractional tuning range in such resonators to date. This remarkable electromechanical resonance tuning is investigated by two different analytical models and finite element simulations. Further, we carefully perform clear control experiments and simulations to elucidate the difference in frequency tuning between heterostructure and single-material resonators. At a given initial strain level, the tuning range depends on the two-dimensional (2D) Young's moduli of the constitutive crystals; devices built on materials with lower 2D moduli show wider tuning ranges. This study exemplifies that vdW heterostructure resonators can retain unconventionally broad, continuous tuning, which is promising for voltage-controlled, tunable nanosystems. △ Less

Submitted 19 June, 2021; originally announced June 2021.

Comments: 12 pages, 5 figures, and 6 pages of Supporting Information

Journal ref: Nano Letters, vol. 21 (2021)

Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride

Authors: Yanan Wang, Jaesung Lee, Jesse Berezovsky, Philip X. -L. Feng

Abstract: Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as a promising platform for quantum photonics with the recent discovery of optically active defect centers and associated spin states. Combined with measured emis… ▽ More Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems (NEMS), has also rapidly emerged as a promising platform for quantum photonics with the recent discovery of optically active defect centers and associated spin states. Combined with measured emission characteristics, here we propose and numerically investigate the cavity quantum electrodynamics (cavity-QED) scheme incorporating these defect-enabled single photon emitters (SPEs) in h-BN microdisk resonators. The whispering-gallery nature of microdisks can support multiple families of cavity resonances with different radial and azimuthal mode indices simultaneously, overcoming the challenges in coinciding a single point defect with the maximum electric field of an optical mode both spatially and spectrally. The excellent characteristics of h-BN SPEs, including exceptional emission rate, considerably high Debye-Waller factor, and Fourier transform limited linewidth at room temperature, render strong coupling with the ratio of coupling to decay rates g/max(γ,\k{appa}) predicated as high as 500. This study not only provides insight into the emitter-cavity interaction, but also contributes toward realizing h-BN photonic components, such as low-threshold microcavity lasers and high-purity single photon sources, critical for linear optics quantum computing and quantum networking applications. △ Less

Submitted 5 June, 2021; originally announced June 2021.

Comments: 9 Pages, 5 Figures

Journal ref: Applied Physics Letters (2021)

Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure

Authors: Fan Ye, Qingchang Liu, Baoxing Xu, Philip X. -L. Feng, Xian Zhang

Abstract: We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser powe… ▽ More We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces between heterostructure and substrate. Crucially, we have found that interfacial thermal conductance between hBN and encapsulated MoS2 is 74MW/m2K and 72MW/m2K in supported and suspended films, respectively, which are significantly higher than interfacial thermal conductance between MoS2 and other substrates. Molecular dynamics (MD) computations conducted in parallel have shown consistent results. This work provides clear evidence of significantly efficient heat dissipation in hBN/MoS2/hBN heterostructures and sheds light on building novel hBN encapsulated nanoelectronics with efficient thermal management. △ Less

Submitted 9 February, 2021; originally announced February 2021.

Hexagonal Boron Nitride Phononic Crystal Waveguides

Authors: Yanan Wang, Jaesung Lee, Xu-Qian Zheng, Yong Xie, Philip X. -L. Feng

Abstract: Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics, mechanics, and emerging quantum engineering. Here, we report on the demonstration of h-BN phononic crystal waveguides with designed pass and stop bands in the ra… ▽ More Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics, mechanics, and emerging quantum engineering. Here, we report on the demonstration of h-BN phononic crystal waveguides with designed pass and stop bands in the radio frequency (RF) range and controllable wave propagation and transmission, by harnessing arrays of coupled h-BN nanomechanical resonators with engineerable coupling strength. Experimental measurements validate that these phononic crystal waveguides confine and support 15 to 24 megahertz (MHz) wave propagation over 1.2 millimeters. Analogous to solid-state atomic crystal lattices, phononic bandgaps and dispersive behaviors have been observed and systematically investigated in the h-BN phononic waveguides. Guiding and manipulating acoustic waves on such additively integratable h-BN platform may facilitate multiphysical coupling and information transduction, and open up new opportunities for coherent on-chip signal processing and communication via emerging h-BN photonic and phononic devices. △ Less

Submitted 5 January, 2020; originally announced January 2020.

Comments: 13 Pages, 6 Figures, 14 Pages of Supplementary Information

Journal ref: ACS Photonics 6, 3225-3232 (2019)

Ultrawide Band Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion

Authors: Xu-Qian Zheng, Jaesung Lee, Subrina Rafique, Lu Han, Christian A. Zorman, Hongping Zhao, Philip X. -L. Feng

Abstract: Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga2O3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga2O3 nanomech… ▽ More Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga2O3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga2O3 nanomechanical resonators using β-Ga2O3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-Ga2O3 circular drumhead structures, we demonstrate multimode nanoresonators up to the 6th mode in high and very high frequency (HF / VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young's modulus of E_Y = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ~40% upshift in frequency and ~90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-Ga2O3 electronic, optoelectronic, and physical sensing devices. △ Less

Submitted 1 July, 2018; originally announced July 2018.

Comments: 18 pages, 6 figures (SI: 12 pages, 6 figures, 2 tables)

Journal ref: ACS Appl. Mater. Interfaces 9, 43090-43097 (2017)

β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection

Authors: Xu-Qian Zheng, Jaesung Lee, Subrina Rafique, Md Rezaul, Lu Han, Hongping Zhao, Christian A. Zorman, Philip X. -L. Feng

Abstract: We report on the first beta gallium oxide (β-Ga2O3) crystal feedback oscillator built by employing a vibrating β-Ga2O3 nanoresonator as the frequency reference for real-time middle ultraviolet (MUV) light detection. We fabricate suspended β-Ga2O3 nanodevices through synthesis of β-Ga2O3 nanoflakes using low-pressure chemical vapor deposition (LPCVD), and dry transfer of nanoflakes on microtrenches… ▽ More We report on the first beta gallium oxide (β-Ga2O3) crystal feedback oscillator built by employing a vibrating β-Ga2O3 nanoresonator as the frequency reference for real-time middle ultraviolet (MUV) light detection. We fabricate suspended β-Ga2O3 nanodevices through synthesis of β-Ga2O3 nanoflakes using low-pressure chemical vapor deposition (LPCVD), and dry transfer of nanoflakes on microtrenches. Open-loop tests reveal a resonance of the β-Ga2O3 device at ~30 MHz. A closed-loop oscillator is then realized by using a combined optical-electrical feedback circuitry, to perform real-time resonant sensing of MUV irradiation. The oscillator exposed to cyclic MUV irradiation exhibits resonant frequency downshifts, with a measured responsivity of $\mathscr{R}$ = -3.1 Hz/pW and a minimum detectable power of δPmin = 0.53 nW for MUV detection. △ Less

Submitted 30 June, 2018; originally announced July 2018.

Comments: 4 pages, 5 figures, IEEE Electron Device Letters, vol. 39, xxx-xxx (2018)

Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators

Authors: Fan Ye, Jaesung Lee, Philip X. -L. Feng

Abstract: Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental d… ▽ More Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize array of MoS2-graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ~100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and opens opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices. △ Less

Submitted 19 December, 2017; originally announced December 2017.

Journal ref: Nanoscale 9, 18208-18215 (2017)

Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy

Authors: Zenghui Wang, Hao Jia, Xu-Qian Zheng, Rui Yang, G. J. Ye, X. H. Chen, Philip X. -L. Feng

Abstract: Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and mechanical anisotropy in free-standing black P thin layers can be precisely determined by spatially resolved multimode nanomechanical resonances. This offers a… ▽ More Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and mechanical anisotropy in free-standing black P thin layers can be precisely determined by spatially resolved multimode nanomechanical resonances. This offers a new means for resolving important crystal orientation and anisotropy in black P device platforms in situ beyond conventional optical and electrical calibration techniques. Furthermore, we show that electrostatic-gating-induced straining can continuously tune the mechanical anisotropic effects on multimode resonances in black P electromechanical devices. Combined with finite element modeling (FEM), we also determine the Young's moduli of multilayer black P to be 116.1 and 46.5 GPa in the zigzag and armchair directions, respectively. △ Less

Submitted 25 September, 2016; originally announced September 2016.

Comments: Main Text: 13 Pages, 4 Figures; Supplementary Information: 5 Pages, 2 Figures, 2 Tables

Journal ref: Nano Letters 16, 5394-5400 (2016)

Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways

Authors: Zenghui Wang, Philip X. -L. Feng

Abstract: Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection eff… ▽ More Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405nm). We also find that the vacuum gap resulting from the widely used 300nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout. △ Less

Submitted 1 August, 2016; originally announced August 2016.

Comments: 8 Figures, 18 Pages

Journal ref: Scientific Reports 6, 28923 (2016)

Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions

Authors: Fan Ye, Jaesung Lee, Jin Hu, Zhiqiang Mao, Jiang Wei, Philip X. -L. Feng

Abstract: Since the discovery of large, non-saturating magnetoresistance in bulk WTe2 which allows microexfoliation, single- and few-layer WTe2 crystals have attracted increasing interests. However, as it mentioned in existing studies, WTe2 flakes appear to degrade in ambient conditions. Here we report experimental observations of saturating degradation in few-layer WTe2 through Raman spectroscopy character… ▽ More Since the discovery of large, non-saturating magnetoresistance in bulk WTe2 which allows microexfoliation, single- and few-layer WTe2 crystals have attracted increasing interests. However, as it mentioned in existing studies, WTe2 flakes appear to degrade in ambient conditions. Here we report experimental observations of saturating degradation in few-layer WTe2 through Raman spectroscopy characterization and careful monitoring of the degradation of single-, bi- and tri-layer (1L, 2L & 3L) WTe2 over long time. Raman peak intensity decreases during WTe2 degradation and 1L flakes degrade faster than 2L and 3L flakes. The relatively faster degradation in 1L WTe2 could be attributed to low energy barrier of oxygen reaction with WTe2. We further investigate the degradation mechanisms of WTe2 using XPS and AES and find that oxidation of Te and W atoms is the main reason of WTe2 degradation. In addition, we observe oxidation occurs only in the depth of 0.5nm near the surface, and the oxidized WTe2 surface could help prevent inner layers from further degradation. △ Less

Submitted 31 August, 2016; v1 submitted 30 July, 2016; originally announced August 2016.

Comments: 6 Figures, 11 Pages

Large-Scale Arrays of Single- and Few-Layer MoS2 Nanomechanical Resonators

Authors: Hao Jia, Rui Yang, Ariana E. Nguyen, Sahar N. Alvillar, Thomas Empante, Ludwig Bartels, Philip X. -L. Feng

Abstract: We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few… ▽ More We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5 to 2um in diameter) offer fundamental resonances (f_0) in the very high frequency (VHF) band (up to ~120MHz) and excellent figures-of-merit up to f_0*Q ~ 3*10^10Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ~15mN/m in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials. △ Less

Submitted 13 July, 2016; originally announced July 2016.

Comments: 14 pages, 6 figures

Journal ref: Nanoscale 8, 10677-10685 (2016)

Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances

Authors: Jaesung Lee, Fan Ye, Zenghui Wang, Rui Yang, Jin Hu, Zhiqiang Mao, Jiang Wei, Philip X. -L. Feng

Abstract: Single crystal tungsten ditelluride (WTe2) has recently been discovered to exhibit non-saturating extreme magnetoresistance in bulk; it has also emerged as a new layered material from which atomic layer crystals can be extracted. While atomically thin WTe2 is attractive for its unique properties, little study has been conducted on single- and few-layer WTe2. Here we report the isolation of single-… ▽ More Single crystal tungsten ditelluride (WTe2) has recently been discovered to exhibit non-saturating extreme magnetoresistance in bulk; it has also emerged as a new layered material from which atomic layer crystals can be extracted. While atomically thin WTe2 is attractive for its unique properties, little study has been conducted on single- and few-layer WTe2. Here we report the isolation of single- and few-layer WTe2, as well as fabrication and characterization of the first WTe2 suspended nanostructures. We have observed new Raman signatures of few-layer WTe2 that have been theoretically predicted but not yet reported to date, in both on-substrate and suspended WTe2 flakes. We have further probed the nanomechanical properties of suspended WTe2 structures by measuring their flexural resonances, and obtain a Young's modulus of E_Y~80GPa for the suspended WTe2 flakes. This study paves the way for future investigations and utilization of the multiple new Raman fingerprints of single- and few-layer WTe2, and for exploring mechanical control of WTe2 atomic layers. △ Less

Submitted 7 May, 2016; v1 submitted 22 March, 2016; originally announced March 2016.

Comments: 12 Pages, 5 Figures in Nanoscale 8, 7854-7860 (2016)

Journal ref: Nanoscale 8, 7854-7860 (2016)

Environmental, Thermal, and Electrical Susceptibility of Black Phosphorus Field Effect Transistors

Authors: Zenghui Wang, Arnob Islam, Rui Yang, Xu-Qian Zheng, Philip X. -L. Feng

Abstract: Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However, the integrity of black P crystal could be susceptible to a number of environmental variables and processes, resulting in degradation in device performance even be… ▽ More Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However, the integrity of black P crystal could be susceptible to a number of environmental variables and processes, resulting in degradation in device performance even before the device optical image suggests so. Here, we perform a systematic study of the environmental effects on black P electronic devices through continued measurements over a month under a number of controlled conditions, including ambient light, air, and humidity, and identify evolution of device performance under each condition. We further examine effects of thermal and electrical treatments on inducing morphology and, performance changes and failure modes in black P devices. The results suggest that procedures well established for nanodevices in other 2D materials may not directly apply to black P devices, and improved procedures need to be devised to attain stable device operation. △ Less

Submitted 15 July, 2015; originally announced July 2015.

Comments: in Journal of Vacuum Science & Technology B (2015)

Design of Black Phosphorus 2D Nanomechanical Resonators by Exploiting the Intrinsic Mechanical Anisotropy

Authors: Zenghui Wang, Philip X. -L. Feng

Abstract: Black phosphorus (P), a layered material that can be isolated down to individual 2D crystalline sheets, exhibits highly anisotropic mechanical properties due to its corrugated crystal structure in each atomic layer, which are intriguing for 2D nanomechanical devices. Here we lay the framework for describing the mechanical resonant responses in free-standing black P structures, by using a combinati… ▽ More Black phosphorus (P), a layered material that can be isolated down to individual 2D crystalline sheets, exhibits highly anisotropic mechanical properties due to its corrugated crystal structure in each atomic layer, which are intriguing for 2D nanomechanical devices. Here we lay the framework for describing the mechanical resonant responses in free-standing black P structures, by using a combination of analytical modeling and numerical simulation. We find that thicker devices (>100nm) operating in the elastic plate regime exhibit pronounced signatures of mechanical anisotropy, and can lead to new multimode resonant characteristics in terms of mode sequences, shapes, and orientational preferences that are unavailable in nanomechanical resonators made of isotropic materials. In addition, through investigating devices with different geometries, we identify the resonant response's dependence on crystal orientation in asymmetric devices, and evaluate the effects from the degree of anisotropy. The results suggest a pathway towards harnessing the mechanical anisotropy in black P for building novel 2D nanomechanical devices and resonant transducers with engineerable multimode functions. △ Less

Submitted 4 April, 2015; originally announced April 2015.

Journal ref: 2D Materials 2, xxxxxx (2015)

Black Phosphorus Nanoelectromechanical Resonators Vibrating at Very High Frequencies

Authors: Zenghui Wang, Hao Jia, Xuqian Zheng, Rui Yang, Zefang Wang, G. J. Ye, X. H. Chen, Jie Shan, Philip X. -L. Feng

Abstract: We report on experimental demonstration of a new type of nanoelectromechanical resonators based on black phosphorus crystals. Facilitated by a highly efficient dry transfer technique, crystalline black phosphorus flakes are harnessed to enable drumhead resonators vibrating at high and very high frequencies (HF and VHF bands, up to ~100MHz). We investigate the resonant vibrational responses from th… ▽ More We report on experimental demonstration of a new type of nanoelectromechanical resonators based on black phosphorus crystals. Facilitated by a highly efficient dry transfer technique, crystalline black phosphorus flakes are harnessed to enable drumhead resonators vibrating at high and very high frequencies (HF and VHF bands, up to ~100MHz). We investigate the resonant vibrational responses from the black phosphorus crystals by devising both electrical and optical excitation schemes, in addition to measuring the undriven thermomechanical motions in these suspended nanostructures. Flakes with thicknesses from ~200nm down to ~20nm clearly exhibit elastic characteristics transitioning from the plate to the membrane regime. Both frequency- and time-domain measurements of the nanomechanical resonances show that very thin black phosphorus crystals hold interesting promises for moveable and vibratory devices, and for semiconductor transducers where high-speed mechanical motions could be coupled to the attractive electronic and optoelectronic properties of black phosphorus. △ Less

Submitted 4 April, 2015; originally announced April 2015.

Journal ref: Nanoscale 7, 877-884 (2015)

Numerical Simulation of Superhalo Electrons Generated by Magnetic Reconnection in the Solar Wind Source Region

Authors: L. -P. Yang, L. -H. Wang, J. -S. He, C. -Y. Tu, S. -H. Zhang, L. Zhang, X. -S. Feng

Abstract: Superhalo electrons appear to be continuously present in the interplanetary medium, even at very quiet times, with a power-law spectrum at energies above $\sim$2 keV. Here we numerically investigate the generation of superhalo electrons by magnetic reconnection in the solar wind source region, using the MHD and test particle simulations for both single X-line reconnection and multiple X-line recon… ▽ More Superhalo electrons appear to be continuously present in the interplanetary medium, even at very quiet times, with a power-law spectrum at energies above $\sim$2 keV. Here we numerically investigate the generation of superhalo electrons by magnetic reconnection in the solar wind source region, using the MHD and test particle simulations for both single X-line reconnection and multiple X-line reconnection. We find that the direct current electric field, produced in the magnetic reconnection region, can accelerate electrons from an initial thermal energy of T $\sim10^5$ K up to hundreds of keV. After acceleration, some of the accelerated electrons, together with the nascent solar wind flow driven by the reconnection, propagate upwards along the newly-opened magnetic field lines into the interplanetary space, while the rest move downwards into the lower atmosphere. Similar to the observed superhalo electrons at 1 AU, the flux of the upward-traveling accelerated electrons versus energy displays a power-law distribution at $\sim$ 2 $-$ 100 keV, $f(E) \sim E^{-δ}$, with a $δ$ of $\sim$ 1.5 $-$ 2.4. For single (multiple) X-line reconnection, the spectrum becomes harder (softer) as the anomalous resistivity parameter $α$ (uniform resistivity $η$) increases. These modeling results suggest that the acceleration in the solar wind source region may contribute to superhalo electrons. △ Less

Submitted 17 June, 2014; originally announced June 2014.

Journal ref: Res. Astron. Astrophys. ,15, 348, 2015

Polytype control of spin qubits in silicon carbide

Authors: Abram L. Falk, Bob B. Buckley, Greg Calusine, William F. Koehl, Viatcheslav V. Dobrovitski, Alberto Politi, Christian A. Zorman, Philip X. -L. Feng, David D. Awschalom

Abstract: Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties.… ▽ More Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials driven approach that could ultimately lead to "designer" spins with tailored properties. Here, we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including spins in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent spins, these interactions provide a route to dipole-coupled networks of separately addressable spins. △ Less

Submitted 10 May, 2013; originally announced May 2013.

Comments: 28 pages, 5 figures, and supplementary information and figures

Journal ref: Nature Communications 4, 1819 (2013)