Voltage controlled terahertz transmission through GaN quantum wells
Authors:
T. Laurent,
R. Sharma,
J. Torres,
P. Nouvel,
S. Blin,
L. Varani,
Y. Cordier,
M. Chmielowska,
S. Chenot,
JP Faurie,
B. Beaumont,
P. Shiktorov,
E. Starikov,
V. Gruzinskis,
V. Korotyevyev,
V. Kochelap
Abstract:
We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenome…
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We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.
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Submitted 16 May, 2011;
originally announced May 2011.