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Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures
Authors:
G. Maffione,
L. S. Farrar,
M. Kapfer,
K. Watanabe,
T. Taniguchi,
H. Aubin,
D. Mailly,
R. Ribeiro-Palau
Abstract:
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability, and reproducibility remain under debate. Here, we present charge transport experiments in dual-gated, dynamically rotatable van der Waals heterostructures based…
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Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a possible ferroelectric state. However, their origin, stability, and reproducibility remain under debate. Here, we present charge transport experiments in dual-gated, dynamically rotatable van der Waals heterostructures based on bilayer graphene encapsulated in BN. Remarkably, the angular degree of freedom acts as an ON/OFF switch for the anomalous gating response. We show that the angular alignment between the two BN layers -- not the presence of a moiré superlattice with graphene -- is the key parameter governing these effects. The relevant alignment between the two BN layers, to observe the anomalous gating effect at room temperature, lies between 15 deg and 45 deg, with no evidence of the expected 60 deg periodicity. Both gate ineffectiveness and hysteresis are highly sensitive to small angular changes, which we classify into three distinct regimes. Our results clarify the conditions necessary to reproduce these phenomena and pave the way for theoretical investigation of their microscopic origins.
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Submitted 5 June, 2025;
originally announced June 2025.
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Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
Authors:
L. S. Farrar,
G. Maffione,
V. -H. Nguyen,
K. Watanabe,
T. Taniguchi,
J. -Ch. Charlier,
D. Mailly,
R. Ribeiro-Palau
Abstract:
The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, which are developed \Reb{when other layered materials are deposited on top of it}. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignm…
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The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, which are developed \Reb{when other layered materials are deposited on top of it}. Here, we introduce a novel device architecture allowing a simultaneous control over the applied displacement field and the crystalline alignment between two materials. Our experimental and numerical results confirm that the crystal field and electrostatic doping due to the interface reflect the 120$^{\circ}$ symmetry of the bilayer graphene/BN heterostructure and are highly affected by the commensurate state. These results provide an unique insight into the role of twist angle in the development of internal crystal fields and intrinsic electrostatic doping in heterostructures. Our results highlight the importance of layer alignment, beyond the existence of a moiré superlattice, to understand the intrinsic properties of a heterostructure.
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Submitted 15 February, 2025; v1 submitted 2 October, 2024;
originally announced October 2024.
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Superconducting Quantum Interference in Twisted van der Waals Heterostructures
Authors:
Liam S. Farrar,
Aimee Nevill,
Zhen Jieh Lim,
Geetha Balakrishnan,
Sara Dale,
Simon J. Bending
Abstract:
Modern Superconducting QUantum Interference Devices (SQUIDs) are commonly fabricated from either Al or Nb electrodes, with an in-situ oxidation process to create a weak link between them. However, common problems of such planar nano- and micro-SQUIDs are hysteretic current-voltage curves, and a shallow flux modulation depth. Here, we demonstrate the formation of both Josephson junctions and SQUIDs…
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Modern Superconducting QUantum Interference Devices (SQUIDs) are commonly fabricated from either Al or Nb electrodes, with an in-situ oxidation process to create a weak link between them. However, common problems of such planar nano- and micro-SQUIDs are hysteretic current-voltage curves, and a shallow flux modulation depth. Here, we demonstrate the formation of both Josephson junctions and SQUIDs using a dry transfer technique to stack and deterministically misalign flakes of NbSe$_{2}$; allowing one to overcome these issues. The Josephson dynamics of the resulting twisted NbSe$_{2}$-NbSe$_{2}$ junctions are found to be sensitive to the misalignment angle of the crystallographic axes. A single lithographic process was then implemented to shape the Josephson junction into a SQUID geometry with typical loop areas of $\simeq$ 25 $μm^{2}$ and weak links $\simeq$ 600 nm wide. These devices display large stable current and voltage modulation depths of up to $ΔI_{c} \simeq$ 75$\%$ and $ΔV \simeq$ 1.4 mV respectively.
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Submitted 12 January, 2021;
originally announced January 2021.
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Coherent phonons and the interplay between charge density wave and Mott phases in 1$T$-TaSe$_{2}$
Authors:
C. J. Sayers,
H. Hedayat,
A. Ceraso,
F. Museur,
M. Cattelan,
L. S. Hart,
L. S. Farrar,
S. Dal Conte,
G. Cerullo,
C. Dallera,
E. Da Como,
E. Carpene
Abstract:
1$T$-TaSe$_{2}$ is host to coexisting strongly-correlated phases including charge density waves (CDWs) and an unusual Mott transition at low temperature. Here, we investigate coherent phonon oscillations in 1$T$-TaSe$_{2}$ using a combination of time- and angle-resolved photoemission spectroscopy (TR-ARPES) and time-resolved reflectivity (TRR). Perturbation by a femtosecond laser pulse triggers a…
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1$T$-TaSe$_{2}$ is host to coexisting strongly-correlated phases including charge density waves (CDWs) and an unusual Mott transition at low temperature. Here, we investigate coherent phonon oscillations in 1$T$-TaSe$_{2}$ using a combination of time- and angle-resolved photoemission spectroscopy (TR-ARPES) and time-resolved reflectivity (TRR). Perturbation by a femtosecond laser pulse triggers a modulation of the valence band binding energy at the $Γ$-point, related to the Mott gap, that is consistent with the in-plane CDW amplitude mode frequency. By contrast, TRR measurements show a modulation of the differential reflectivity comprised of multiple frequencies belonging to the distorted CDW lattice modes. Comparison of the temperature dependence of coherent and spontaneous phonons across the CDW transition shows that the amplitude mode intensity is more easily suppressed during perturbation of the CDW state by the optical excitation compared to other modes. Our results clearly identify the relationship of the in-plane CDW amplitude mode with the Mott phase in 1$T$-TaSe$_{2}$ and highlight the importance of lattice degrees of freedom.
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Submitted 10 September, 2020;
originally announced September 2020.
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Correlation between crystal purity and the charge density wave in 1$T$-VSe$_2$
Authors:
C. J. Sayers,
L. S. Farrar,
S. J. Bending,
M. Cattelan,
A. J. H. Jones,
N. A. Fox,
G. Kociok-Köhn,
K. Koshmak,
J. Laverock,
L. Pasquali,
E. Da Como
Abstract:
We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measure…
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We examine the charge density wave (CDW) properties of 1$T$-VSe$_{2}$ crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ($T_{\mathrm{g}}$ $<$ 630$^{\circ}$C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1$T$-VSe$_{2}$ crystals with a CDW transition temperature, $T_{\mathrm{CDW}}$ = (112.7 $\pm$ 0.8) K and maximum residual resistance ratio (RRR) $\approx$ 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1$T$-VSe$_{2}$ to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.
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Submitted 11 February, 2020; v1 submitted 22 January, 2020;
originally announced January 2020.
