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Showing 1–6 of 6 results for author: Falcone, D F

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  1. arXiv:2505.24468  [pdf, ps, other

    cond-mat.mtrl-sci physics.app-ph physics.comp-ph

    Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations

    Authors: Simanta Lahkar, Valeria Bragaglia, Behnaz Bagheri, Donato Francesco Falcone, Matteo Galetta, Marilyne Sousa, Aida Todri-Sanial

    Abstract: Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes governing their behavior, and specifically the atomistic mechanisms of forming, remain poorly understood. In this work, we present a detailed analysis of the forming mechanism at the atomic level using molecular dynamics… ▽ More

    Submitted 19 June, 2025; v1 submitted 30 May, 2025; originally announced May 2025.

  2. arXiv:2505.06809  [pdf, ps, other

    cond-mat.mtrl-sci

    Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

    Authors: Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone, Valeria Bragaglia, Jente Clarysse, Laura Bégon-Lours, Marko Mladenović, Bert J. Offrein, Mathieu Luisier

    Abstract: A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Previous studies have identified that changing the initial stoichiometry of the switching layer… ▽ More

    Submitted 10 May, 2025; originally announced May 2025.

  3. arXiv:2503.14126  [pdf, other

    cs.ET

    Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks

    Authors: Wooseok Choi, Thomas van Bodegraven, Jelle Verest, Olivier Maher, Donato Francesco Falcone, Antonio La Porta, Daniel Jubin, Bert Jan Offrein, Siegfried Karg, Valeria Bragaglia, Aida Todri-Sanial

    Abstract: We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology, is leveraged to establish dense coupling elements between oscillator neurons, allowing phase-encoded analog information to be processed in-memory. We also realiz… ▽ More

    Submitted 18 March, 2025; originally announced March 2025.

    Comments: Accepted in IEEE IMW 2025

  4. arXiv:2502.18152  [pdf, other

    eess.SP

    Edge Training and Inference with Analog ReRAM Technology for Hand Gesture Recognition

    Authors: Victoria Clerico, Anirvan Dutta, Donato Francesco Falcone, Wooseok Choi, Matteo Galetta, Tommaso Stecconi, András Horváth, Shokoofeh Varzandeh, Bert Jan Offrein, Mohsen Kaboli, Valeria Bragaglia

    Abstract: Tactile hand gesture recognition is a crucial task for user control in the automotive sector, where Human-Machine Interactions (HMI) demand low latency and high energy efficiency. This study addresses the challenges of power-constrained edge training and inference by utilizing analog Resistive Random Access Memory (ReRAM) technology in conjunction with a real tactile hand gesture dataset. By optim… ▽ More

    Submitted 25 February, 2025; originally announced February 2025.

    Comments: Accepted in IEEE ISCAS 2025

  5. All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

    Authors: Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Begon-Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia

    Abstract: Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training acceleration. However, a unified analog in-memory technology platform-capable of on-chip training, weight retention, and long-term inference acceleration-has yet to be reported. This work presents an all-in-one analog… ▽ More

    Submitted 19 June, 2025; v1 submitted 6 February, 2025; originally announced February 2025.

  6. High-Conductance, Ohmic-like HfZrO$_4$ Ferroelectric Memristor

    Authors: Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein

    Abstract: The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record current density of 0.01 A/cm$^2$ (at a read voltage of 80 mV) as well as ideal memristive behavior (linear current-voltage relation and analog resistive switchi… ▽ More

    Submitted 21 September, 2023; originally announced September 2023.

    Comments: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)