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Topological phase control in Mn1-xGexBi2Te4 via spin-orbit coupling and magnetic configuration engineering
Authors:
A. M. Shikin,
N. L. Zaitsev,
A. V. Eryzhenkov,
R. V. Makeev,
T. P. Estyunina,
D. A. Estyunin,
A. V. Tarasov
Abstract:
Magnetic topological systems based on MnBi2Te4 have recently attracted significant attention due to their rich interplay between magnetism and topological electronic states. In this work, using density functional theory (DFT), we investigate topological phase transitions (TPTs) in Mn1-xGexBi2Te4 compounds with both ferromagnetic (FM) and antiferromagnetic (AFM) ordering under variations of spin-or…
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Magnetic topological systems based on MnBi2Te4 have recently attracted significant attention due to their rich interplay between magnetism and topological electronic states. In this work, using density functional theory (DFT), we investigate topological phase transitions (TPTs) in Mn1-xGexBi2Te4 compounds with both ferromagnetic (FM) and antiferromagnetic (AFM) ordering under variations of spin-orbit coupling (SOC) strength and uniaxial strain along the c axis. We show that the emergence of a Weyl semimetal (WSM) phase requires the crossing of bands with opposite sz spin projections along the ΓZ direction. Modulation of SOC and strain can annihilate Weyl points via spin-selective hybridization, driving transitions into trivial or topological insulating phases. Furthermore, we demonstrate that local asymmetry in Mn/Ge substitution, particularly at 37.5% Ge concentration (Mn0.625Ge0.375Bi2Te4) can locally disrupt AFM interlayer coupling and induce a WSM state even in globally AFM systems, without external remagnetization. To optimize Weyl point separation and enhance the anomalous Hall effect (AHE), we propose partial substitution of Mn by Fe and Te by Se.
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Submitted 31 May, 2025;
originally announced June 2025.
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Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping
Authors:
A. V. Tarasov,
D. A. Estyunin,
A. G. Rybkin,
A. S. Frolov,
A. I. Sergeev,
A. V. Eryzhenkov,
V. V. Anferova,
T. P. Estyunina,
D. A. Glazkova,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
Y. Kumar,
K. Shimada,
A. M. Shikin
Abstract:
The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory…
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The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies.
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Submitted 24 December, 2024;
originally announced December 2024.
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Spin texture tunability in Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ through varying Ge Concentration
Authors:
A. M. Shikin,
D. A. Estyunin,
N. L. Zaitsev,
T. P. Estyunina,
A. V. Eryzhenkov,
K. A. Kokh,
O. E. Tereshchenko,
T. Iwata,
K. Kuroda,
K. Miyamoto,
T. Okuda,
K. Shimada,
A. V. Tarasov
Abstract:
The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using laser radiation (Laser Spin-ARPES) with variation of the concentration of substitutional Ge atoms (x from 0.1 to 0.8) for in-plane ($s_x$) and out-of-plane (…
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The spin-resolved dispersion dependencies for the topological insulator Mn$_{1-x}$Ge$_x$Bi$_2$Te$_4$ in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the Brillouin zone were studied by spin- and angle-resolved photoemission spectroscopy using laser radiation (Laser Spin-ARPES) with variation of the concentration of substitutional Ge atoms (x from 0.1 to 0.8) for in-plane ($s_x$) and out-of-plane ($s_z$) spin orientation. The formation of Rashba-like states is shown, which shift to lower energies with increasing Ge concentration. In the region of Ge concentrations from 50% to 75%, the contribution of these states to the formed spin-dependent dispersions becomes predominant. A pronounced in-plane ($s_y$) spin polarization, asymmetric for opposite $\pm k_\parallel$ directions, is revealed for the Dirac cone states, while the Rashba-like states exhibit a pronounced asymmetry in both in-plane ($s_y$) and out-of-plane ($s_z$) spin polarizations. Theoretical calculations confirmed the asymmetric polarization of the Rashba-like states formed in the $\bar{\rm K}\barΓ\bar{\rm K}'$ path of the BZ, simultaneously for in-plane and out-of-plane spin orientation. Constant energy maps for Rashba-like states show a pronounced $s_z$ spin component along the $\barΓ\bar{\rm K}$ direction, with a sign change as the contour crosses the $\barΓ\bar{\rm M}$ direction. The observed spin polarization can influence the development of spin devices based on magnetic topological insulators.
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Submitted 18 November, 2024;
originally announced November 2024.
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The electronic structure of Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$: experimental evidence of topological phase transition
Authors:
D. A. Estyunin,
T. P. Estyunina,
I. I. Klimovskikh,
K. A. Bokai,
V. A. Golyashov,
K. A. Kokh,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
Y. Kumar,
T. Iwata,
T. Kosa,
T. Okuda,
K. Miyamoto,
K. Kuroda,
K. Shimada,
A. M. Shikin
Abstract:
This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and ci…
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This study investigates methods for controlling the physical properties of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ (MBT) by substituting Mn with Pb in Mn$_{1-x}$Pb$_x$Bi$_2$Te$_4$ (MPBT) solid solutions. This substitution enables tunable magnetic and electronic properties. Using various angle-resolved photoemission spectroscopy (ARPES) techniques, including spin-resolved and circular dichroism (CD) measurements, we analyzed the evolution of the electronic structure across different Pb concentrations, with a focus on topological phase transitions (TPT) near x = 50 %. Key indicators of TPT include the presence or absence of topological surface states (TSS) and bulk band gap closure. The results show a gradual decrease of the bulk band gap in the electronic structure of MPBT up to x = 40 %, where it nearly vanishes, followed by a constant gap value between 40 - 60 %, and its reopening above 80 %, which is accompanied by a transition of the electronic structure of MPBT to a PbBi$_2$Te$_4$-like electronic structure. TSS were observed at x less than 30 % and greater than 80 %, as confirmed by CD and spin-resolved ARPES data, but were absent near x = 55 %, suggesting a distinct topological phase - possibly semi-metallic or a trivial insulator with a narrow gap phase. These findings demonstrate the tunability of the electronic structure of MPBT, making it a promising candidate for topological and spintronic applications.
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Submitted 15 November, 2024;
originally announced November 2024.
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Phase transitions, Dirac and WSM states in $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$
Authors:
A. M. Shikin,
N. L. Zaitsev,
T. P. Estyunina,
D. A. Estyunin,
A. G. Rybkin,
D. A. Glazkova,
I. I. Klimovskikh,
A. V. Eryzhenkov,
K. A. Kokh,
V. A. Golyashov,
O. E. Tereshchenko,
S. Ideta,
Y. Miyai,
T. Iwata,
T. Kosa,
K. Kuroda,
K. Shimada,
A. V. Tarasov
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradua…
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Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10$\%$ to 75$\%$. It was shown that when Ge concentration increases then the bulk band gap decreases and reaches zero plateau in the concentration range of 45$\%$-60$\%$ while non-topological surface states (TSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40$\%$. DFT calculations of $\mathrm{Mn}_{1-x} \mathrm{Ge}_x \mathrm{Bi}_2 \mathrm{Te}_4$ band structure were carried out to identify the nature of observed band dispersion features and to analyze a possibility of magnetic Weyl semimetal state formation in this system. These calculations were performed for both antiferromagnetic (AFM) and ferromagnetic (FM) ordering types while the spin-orbit coupling (SOC) strength was varied or a strain (compression or tension) along the $c$-axis was applied. Calculations show that two different series of topological phase transitions (TPTs) may be implemented in this system depending on the magnetic ordering. At AFM ordering transition between TI and trivial insulator phase goes through the Dirac semimetal state, whereas for FM phase such route admits three intermediate states instead of one (TI - Dirac semimetal - Weyl semimetal - Dirac semimetal - trivial insulator).
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Submitted 21 June, 2024;
originally announced June 2024.
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Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials
Authors:
I. I. Klimovskikh,
S. V. Eremeev,
D. A. Estyunin,
S. O. Filnov,
K. Shimada,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
A. S. Frolov,
A. I. Sergeev,
V. S. Stolyarov,
V. Miksic Trontl,
L. Petaccia,
G. Di Santo,
M. Tallarida,
J. Dai,
S. Blanco-Canosa,
T. Valla,
A. M. Shikin,
E. V. Chulkov
Abstract:
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi…
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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.
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Submitted 18 March, 2024;
originally announced March 2024.
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Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
T. P. Makarova,
A. V. Eryzhenkov,
D. Yu. Usachov,
D. A. Estyunin,
D. A. Glazkova,
I. I. Klimovskikh,
A. G. Rybkin,
A. V. Tarasov
Abstract:
The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals…
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The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals (SvdW) distance between the first and second septuple layers (SLs), (ii) the magnetic moment on Mn atoms, (iii) the spin-orbit coupling (SOC) strength for the surface Te and Bi atoms and related changes in the localization of the topological surface states (TSSs). It was shown that all these factors may change the gap width at the DP in a wide range from 5 to $\sim$90~meV. We show that the Dirac gap variation is mainly determined by the corresponding changes in the TSSs spatial distribution. The best agreement between the presented experimental data (with the Dirac gaps between $\sim$15 and 55~meV) and the calculations takes place for a slightly compressed SvdW interval (of about -3.5~\% compared to the bulk value) with modified SOC for surface atoms (that can occur in the presence of various defects in the near-surface region). We show that upon changing the values of the SvdW interval and surface SOC strength the TSSs spatial distribution shifts between the SLs with opposite magnetizations, which leads to a non-monotonic change in the Dirac gap size.
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Submitted 1 June, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Sample-dependent Dirac point gap in MnBi$_2$Te$_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
Authors:
A. M. Shikin,
D. A. Estyunin,
N. L. Zaitsev,
D. Glazkova,
I. I. Klimovskikh,
S. Filnov,
A. G. Rybkin,
E. F. Schwier,
S. Kumar,
A. Kimura,
N. Mamedov,
Z. Aliev,
M. B. Babanly,
K. Kokh,
O. E. Tereshchenko,
M. M. Otrokov,
E. V. Chulkov,
K. A. Zvezdin,
A. K. Zvezdin
Abstract:
Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimen…
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Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi$_2$Te$_4$ Dirac cone. Here, using micro($μ$)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi$_2$Te$_4$ samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi$_2$Te$_4$ samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Further, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi$_2$Te$_4$ DP gap size.
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Submitted 9 July, 2021;
originally announced July 2021.
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Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
D. A. Estyunin,
I. I. Klimovskikh,
S. O. Filnov,
E. F. Schwier,
S. Kumar,
K. Myamoto,
T. Okuda,
A. Kimura,
K. Kuroda,
K. Yaji,
S. Shin,
Y. Takeda,
Y. Saitoh,
Z. S. Aliev,
N. T. Mamedov,
I. R. Amiraslanov,
M. B. Babanly,
M. M. Otrokov,
S. V. Eremeev,
E. V. Chulkov
Abstract:
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1…
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Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Band gap opening at the Dirac point in Co/BiSbTeSe2(0001) system
Authors:
A. K. Kaveev,
A. G. Banshchikov,
A. N. Terpitskiy,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
D. A. Estyunin,
A. M. Shikin,
E. F. Schwier
Abstract:
Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization…
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Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization of surface states upon the introduction of Co adatoms, which decrease crystallographic symmetry and eliminate topological protection of the surface states.
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Submitted 26 December, 2019;
originally announced December 2019.
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Synchrotron radiation induced magnetization in magnetically-doped and pristine topological insulators
Authors:
A. M. Shikin,
D. M. Sostina,
A. A. Rybkina,
V. Yu. Voroshnin,
I. I. Klimovskikh,
A. G. Rybkin,
D. A. Estyunin,
K. A. Kokh,
O. E. Tereshchenko,
L. Petaccia,
G. Di Santo,
P. N. Skirdkov,
K. A. Zvezdin,
A. K. Zvezdin,
A. Kimura,
E. V. Chulkov,
E. E. Krasovskii
Abstract:
Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized…
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Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized synchrotron radiation (SR) is followed by the hole-generated uncompensated spin accumulation and the SR-induced magnetization via the spin-torque effect. We show that the photoexcitation of the DC is asymmetric, that it varies with the photon energy, and that it practically does not change during the relaxation. We find a relation between the photoexcitation asymmetry, the generated spin accumulation and the induced spin polarization of the DC and V 3d states. Experimentally the SR-generated in-plane and out-of-plane magnetization is confirmed by the $k_{\parallel}$-shift of the DC position and by the splitting of the states at the Dirac point even above the Curie temperature. Theoretical predictions and estimations of the measurable physical quantities substantiate the experimental results.
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Submitted 27 July, 2017;
originally announced July 2017.
