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Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth
Authors:
Peco Myint,
Jeffrey M. Woodward,
Chenyu Wang,
Xiaozhi Zhang,
Lutz Wiegart,
Andrei Fluerasu,
Randall L. Headrick,
Charles R. Eddy, Jr.,
Karl F. Ludwig
Abstract:
Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ra…
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Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. However, the addition of the plasma into the growth environment also complicates the surface dynamical evolution. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. XPCS examines the evolution of the coherent X-ray scattering speckle pattern, which is a fingerprint of the unique sample microstructure at each moment in time. In PE-ALD, ultrathin films are synthesized from repeated cycles of alternating self-limited surface reactions induced by temporally-separated pulses of material precursor and plasma reactant, allowing the influence of each on the evolving morphology to be examined. During the heteroepitaxial 3D growth examined here, sudden changes in surface structure during initial film growth, consistent with numerous overlapping stress-relief events, are observed. When the film becomes continuous, the nanoscale surface morphology abruptly becomes long-lived with correlation time spanning the period of the experiment. Throughout the growth experiment, there is a consistent repeating pattern of correlations associated with the cyclic growth process, which is modeled as transitions between different surface states. The plasma exposure does not simply freeze in a structure that is then built upon in subsequent cycles, but rather there is considerable surface evolution during all phases of the growth cycle.
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Submitted 23 June, 2023;
originally announced June 2023.
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Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification
Authors:
Michael A. Mastro,
Charles R. Eddy, Jr.,
Marko J. Tadjer,
Jennifer K. Hite,
Jihyun Kim,
Stephen J. Pearton
Abstract:
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O…
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Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O$_3$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $β$-Ga$_2$O$_3$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
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Submitted 8 May, 2021;
originally announced May 2021.
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III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Authors:
Michael A. Mastro,
Travis J. Anderson,
Marko J. Tadjer,
Francis J. Kub,
Jennifer K. Hite,
Jihyun Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emittin…
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This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Nickel Foam as a Substrate for III-nitride Nanowire Growth
Authors:
Michael A. Mastro,
Neeraj Nepal,
Fritz Kub,
Jennifer K. Hite,
J. Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane dire…
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This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
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Submitted 2 September, 2020;
originally announced September 2020.
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Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Authors:
Michael A. Mastro,
Hong-Youl Kim,
Jaehui Ahn,
Blake Simpkins,
Pehr Pehrsson,
Jihyun Kim,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cr…
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An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
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Submitted 2 September, 2020;
originally announced September 2020.
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Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Authors:
Michael A. Mastro,
Byung-Jae Kim,
J. A. Freitas, Jr.,
Joshua D. Caldwell,
Ron Rendell,
Jennifer Hite,
Charles R. Eddy, Jr.,
Jihyun Kim
Abstract:
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avo…
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Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.
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Submitted 2 September, 2020;
originally announced September 2020.
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Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
Authors:
Michael A. Mastro,
Joshua D. Caldwell,
Ron T. Holm,
Rich L. Henry,
Charles R. Eddy Jr
Abstract:
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to e…
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A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design
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Submitted 2 September, 2020;
originally announced September 2020.
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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
C. R. Eddy Jr.,
D. K. Gaskill,
R. L. Henry,
M. E. Twigg
Abstract:
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the t…
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Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.
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Submitted 2 September, 2020;
originally announced September 2020.
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All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Authors:
Michael A. Mastro,
Jaime A. Freitas,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
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Submitted 2 September, 2020;
originally announced September 2020.
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Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
D. K. Gaskill,
J. C. Culbertson,
M. Fatemi,
C. R. Eddy Jr.,
R. L. Henry,
M. E. Twigg
Abstract:
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelect…
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High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.
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Submitted 2 September, 2020;
originally announced September 2020.
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Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
C. R. Eddy, Jr.,
R. L. Henry,
M. E. Twigg,
A. Rosenberg
Abstract:
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented…
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Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.
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Submitted 2 September, 2020;
originally announced September 2020.
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Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode
Authors:
Michael A. Mastro,
Chul Soo Kim,
Mijin Kim,
Josh Caldwell,
Ron T. Holm,
Igor Vurgaftman,
Jihyun Kim,
Charles R. Eddy Jr.,
Jerry R. Meyer
Abstract:
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lo…
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A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.
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Submitted 2 September, 2020;
originally announced September 2020.
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Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
Authors:
M. A. Mastro,
J. K. Hite,
C. R. Eddy, Jr.,
M. J. Tadjer,
S. J. Pearton,
F. Ren,
J. Kim
Abstract:
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-…
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Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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Submitted 2 September, 2020;
originally announced September 2020.
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Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate
Authors:
A. Mukherjee,
C. T. Ellis,
M. M. Arik,
P. Taheri,
E. Oliverio,
P. Fowler,
J. G. Tischler,
Y. Liu,
E. R. Glaser,
R. L. Myers-Ward,
J. L. Tedesco,
C. R. Eddy Jr,
D. Kurt Gaskill,
H. Zeng,
G. Wang,
J. Cerne
Abstract:
We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk Si…
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We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk SiC. Our experiments and modelling indicate that the enhancement occurs at the high-energy edge of the SiC reststrahlen band where the real component of the complex refractive index n passes through unity. Furthermore, since the signal is greatly enhanced when n=1, the enhancement is predicted to exist over the entire visible/infrared (IR) spectrum for a free-standing film. We also predict similar giant enhancement in both Faraday (transmission) and Kerr rotation for thin films on a metamaterial substrate with refractive index n=-1. This work demonstrates that the substrate used in MOKE measurements must be carefully chosen when investigating magneto-optical materials with weak MOKE signals or when designing MOKE-based optoelectronic devices.
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Submitted 19 January, 2019;
originally announced January 2019.
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Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films
Authors:
Marko J. Tadjer,
Virginia D. Wheeler,
Brian P. Downey,
Zachary R. Robinson,
David J. Meyer,
Charles R. Eddy, Jr.,
Fritz J. Kub
Abstract:
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metal…
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Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 $°$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these conditions the crystalline VO$_{2}$ phase was maintained, while formation of the V$_{2}$O$_{5}$ phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 $°$C range, with a R$_{ON}$/R$_{OFF}$ ratio of up to about 750 and critical transition temperature of 7-10 $°$C. Electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO$_{2}$ sample processed with the 2 hr long anneal. Both the width and slope of the field induced MIT hysteresis were dependent upon the VO$_{2}$ crystalline quality.
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Submitted 19 February, 2016;
originally announced February 2016.
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Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
Authors:
P. Xu,
M. L. Ackerman,
S. D. Barber,
J. K. Schoelz,
D. Qi,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
D. K. Gaskill
Abstract:
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed…
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Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.
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Submitted 27 January, 2015;
originally announced January 2015.
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Atomic-Scale Movement Induced in Nano-Ridges by Scanning Tunneling Microscopy on Epitaxial Graphene Grown on 4H-SiC(0001)
Authors:
P. Xu,
S. D. Barber,
J. K. Schoelz,
M. L. Ackerman,
D. Qi,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill
Abstract:
Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward…
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Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward and reverse images are simultaneously recorded. An apparent 100% enlarged graphene lattice constant is observed along the leading edge of the image for both directions. Horizontal movement of the graphene, due to both an electrostatic attraction to the STM tip and weak bonding to the substrate, is thought to contribute to the results.
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Submitted 23 January, 2015;
originally announced January 2015.
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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
Authors:
P. Xu,
M. L. Ackerman,
S. D. Barber,
J. K. Schoelz,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill
Abstract:
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furth…
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Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample.
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Submitted 20 January, 2015;
originally announced January 2015.
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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
Authors:
P. Xu,
D. Qi,
J. K. Schoelz,
J. Thompson,
P. M. Thibado,
V. D. Wheeler,
L. O. Nyakiti,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill,
M. Neek-Amal,
F. M. Peeters
Abstract:
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals infor…
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Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L^-1 + αL^-2.
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Submitted 30 December, 2014;
originally announced December 2014.
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Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene
Authors:
A. Nath,
M. Currie,
V. D. Wheeler,
M. J. Tadjer,
A. D. Koehler,
Z. R. Robinson,
K. Sridhara,
S. C. Hernandez,
J. A. Wollmershauser,
J. T Robinson,
R. L. Myers-Ward,
C. R. Eddy, Jr.,
M. V. Rao,
D. K. Gaskill
Abstract:
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist resid…
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Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit.
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Submitted 19 November, 2014;
originally announced November 2014.
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Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy
Authors:
M. Neek-Amal,
P. Xu,
D. Qi,
P. M. Thibado,
L. O. Nyakiti,
V. D. Wheeler,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill,
F. M. Peeters
Abstract:
Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the m…
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Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the minimum energy configuration, thereby leaving the height amplitude as the only unknown parameter. The latter is determined from DFT calculations for AB and AA stacked bilayer graphene in order to eliminate all fitting parameters. Excellent agreement with scanning tunneling microscopy (STM) results across multiple substrates is reported as function of twist angle.
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Submitted 4 July, 2014;
originally announced July 2014.
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Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Authors:
Wan Sik Hwang,
Pei Zhao,
Kristof Tahy,
Luke O. Nyakiti,
Virginia D. Wheeler,
Rachael. L. Myers-Ward,
Charles R. Eddy Jr.,
D. Kurt Gaskill,
Joshua A. Robinson,
Wilfried Haensch,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNR…
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We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.
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Submitted 25 October, 2013;
originally announced October 2013.
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ZnS/Diamond Composite Coatings for Infrared Transmission Applications Formed by the Aerosol Deposition Method
Authors:
Scooter D. Johnson,
Fritz J. Kub,
Charles R. Eddy Jr
Abstract:
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room tem…
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The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room temperature and at a high deposition rate on a variety of substrates. Deposition is achieved by creating a pressure gradient that accelerates micrometer-scale particles in an aerosol to high velocity.
Upon impact with the target substrate the particles fracture and embed. Continued deposition forms the thick compacted film. Deposition from an aerosolized mixture of ZnS and diamond powders onto all targets results in linear trend from apparent sputter erosion of the substrate at 100% diamond to formation of a film with increasing fractions of ZnS. The crossover from abrasion to film formation on sapphire occurs above about 50% ZnS and a mixture of 90% ZnS and 10% diamond forms a well-adhered film of about 0.7 μm thickness at a rate of 0.14 μm/min. Resulting films are characterized by scanning electron microscopy, profilometry, infrared transmission spectroscopy, and x-ray photoemission spectroscopy. These initial films mark progress toward the future goal of coating ZnS substrates for abrasion resistance.
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Submitted 16 July, 2013;
originally announced July 2013.
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Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect
Authors:
P. Kühne,
V. Darakchieva,
J. D. Tedesco,
R. L. Myers-Ward,
C. R. Eddy Jr.,
D. K. Gaskill,
R. Yakimova,
C. M. Herzinger,
J. A. Woollam,
M. Schubert,
T. Hofmann
Abstract:
We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field…
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We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations.
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Submitted 28 August, 2013; v1 submitted 4 May, 2013;
originally announced May 2013.
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Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
Authors:
Yu-Ming Lin,
Damon B. Farmer,
Keith A. Jenkins,
Yanqing Wu,
L. Tedesco,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
D. Kurt Gaskill,
Christos Dimitrakopoulos,
Phaedon Avouris
Abstract:
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene te…
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This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.
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Submitted 7 November, 2011;
originally announced November 2011.
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Multi-carrier Transport in Epitaxial Multi-layer Graphene
Authors:
Yu-Ming Lin,
Christos Dimitrakopoulos,
Damon B. Farmer,
Shu-Jen Han,
Yanqing Wu,
Wenjuan Zhu,
D. Kurt Gaskill,
Joseph L. Tedesco,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Alfred Grill,
Phaedon Avouris
Abstract:
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport…
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Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.
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Submitted 1 September, 2010;
originally announced September 2010.
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Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
Authors:
Joseph L. Tedesco,
Glenn G. Jernigan,
James C. Culbertson,
Jennifer K. Hite,
Yang Yang,
Kevin M. Daniels,
Rachael L. Myers-Ward,
Charles R. Eddy, Jr.,
Joshua A. Robinson,
Kathleen A. Trumbull,
Maxwell T. Wetherington,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th…
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Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.
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Submitted 28 July, 2010;
originally announced July 2010.
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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Authors:
Joshua D. Caldwell,
Travis J. Anderson,
James C. Culbertson,
Glenn G. Jernigan,
Karl D. Hobart,
Fritz J. Kub,
Marko J. Tadjer,
Joseph L. Tedesco,
Jennifer K. Hite,
Michael A. Mastro,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr…
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In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.
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Submitted 14 October, 2009;
originally announced October 2009.
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Epitaxial Graphene Growth on SiC Wafers
Authors:
D. Kurt Gaskill,
Glenn G. Jernigan,
Paul M. Campbell,
Joseph L. Tedesco,
James C. Culbertson,
Brenda L. VanMil,
Rachael L. Myers-Ward,
Charles R. Eddy, Jr.,
Jeong Moon,
D. Curtis,
M. Hu,
D. Wong,
C. McGuire,
Joshua A. Robinson,
Mark A. Fanton,
Joseph P. Stitt,
Thomas Stitt,
David Snyder,
Xiaojun Weng,
Eric Frantz
Abstract:
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm Si…
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An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.
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Submitted 29 July, 2009;
originally announced July 2009.
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Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Authors:
Joseph L. Tedesco,
Brenda L. VanMil,
Rachael L. Myers-Ward,
James C. Culbertson,
Glenn G. Jernigan,
Paul M. Campbell,
Joseph M. McCrate,
Stephen A. Kitt,
Charles R. Eddy, Jr.,
D. Kurt Gaskill
Abstract:
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free c…
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Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.
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Submitted 29 July, 2009;
originally announced July 2009.
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Graphene formation on SiC substrates
Authors:
Brenda L. VanMil,
Rachael L. Myers-Ward,
Joseph L. Tedesco,
Charles R. Eddy, Jr.,
Glenn G. Jernigan,
James C. Culbertson,
Paul M. Campbell,
Joseph M. McCrate,
Stephen A. Kitt,
D. Kurt Gaskill
Abstract:
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A…
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Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports.
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Submitted 28 July, 2009;
originally announced July 2009.
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Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Authors:
Joseph L. Tedesco,
Brenda L. VanMil,
Rachael L. Myers-Ward,
Joseph M. McCrate,
Stephen A. Kitt,
Paul M. Campbell,
Glenn G. Jernigan,
James C. Culbertson,
Charles R. Eddy, Jr.,
D. Kurt Gaskill
Abstract:
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carr…
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Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face.
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Submitted 29 July, 2009;
originally announced July 2009.
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Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Authors:
Joshua A. Robinson,
Maxwell Wetherington,
Joseph L. Tedesco,
Paul M. Campbell,
Xiaojun Weng,
Joseph Stitt,
Mark A. Fanton,
Eric Frantz,
David Snyder,
Brenda L. VanMil,
Glenn G. Jernigan,
Rachael L. Myers-Ward,
Charles R. Eddy, Jr.,
D. Kurt Gaskill
Abstract:
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the devic…
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We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.
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Submitted 27 February, 2009;
originally announced February 2009.
