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Quantum-dot single-electron transistor as thermoelectric quantum detectors at terahertz frequencies
Authors:
Mahdi Asgari,
Dominique Coquillat,
Guido Menichetti,
Valentina Zannier,
Nina Dyakonova,
Wojciech Knap,
Lucia Sorba,
Leonardo Viti,
Miriam Serena Vitiello
Abstract:
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter…
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Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exhibits an extra electromotive force driven by the photothermoelectric effect, which is exploited to efficiently sense radiation at 0.6 THz with a noise equivalent power < 8 pWHz-1/2 and almost zero dark current. The achieved results open intriguing perspectives for quantum key distributions, quantum communications and quantum cryptography at terahertz frequencies.
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Submitted 10 September, 2021;
originally announced September 2021.
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Gated two-dimensional electron gas in magnetic field: nonlinear versus linear regimes
Authors:
N. Dyakonova,
M. Dyakonov,
Z. D. Kvon
Abstract:
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting…
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We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced re-distribution of the electron density in the conducting channel. The experimental results obtained in the non-linear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.
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Submitted 14 November, 2020;
originally announced November 2020.
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Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
Authors:
A. Kadykov,
F. Teppe,
C. Consejo,
L. Viti,
M. Vitiello,
D. Coquillat,
S. Ruffenach,
S. Morozov,
S. Kristopenko,
M. Marcinkiewicz,
N. Dyakonova,
W. Knap,
V. Gavrilenko,
N. N. Michailov,
S. A. Dvoretskii
Abstract:
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological F…
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We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.
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Submitted 27 April, 2018;
originally announced April 2018.
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High intensity study of THz detectors based on field effect transistors
Authors:
Dmytro B. But,
Christoph Drexler,
Mykola V. Sakhno,
Nina Dyakonova,
Oleksiy Drachenko,
Alexey Gutin,
Fiodor F. Sizov,
Sergey D. Ganichev,
Wojciech Knap
Abstract:
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of…
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Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation power up to kW/cm^2 range. The saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm^2. The observed signal saturation is explained by drain photocurrent saturation similar to saturation in direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitatively experimental data both in linear and nonlinear (saturation) range. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orderd of magnitudes of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2).
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Submitted 2 February, 2014;
originally announced February 2014.
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Helicity sensitive terahertz radiation detection by field effect transistors
Authors:
Christoph Drexler,
Nina Dyakonova,
Peter Olbrich,
Johannes Karch,
Michael Schafberger,
Krzysztof Karpierz,
Yuri Mityagin,
Masha Lifshits,
Frederic Teppe,
Oleg Klimenko,
Yahia Meziani,
Wojciech Knap,
Sergey Ganichev
Abstract:
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one.…
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Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
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Submitted 25 April, 2012;
originally announced April 2012.
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Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Authors:
S. Boubanga-Tombet,
F. Teppe,
J. Torres,
A. El Moutaouakil,
D. Coquillat,
N. Dyakonova,
C. Consejo,
P. Arcade,
P. Nouvel,
H. Marinchio,
T. Laurent,
C. Palermo,
A. Penarier,
T. Otsuji,
L. Varani,
3,
W. Knap
Abstract:
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A s…
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We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocity.
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Submitted 18 November, 2010;
originally announced November 2010.
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Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Authors:
W. Knap,
M. Dyakonov,
D. Coquillat,
F. Teppe,
N. Dyakonova,
J. Łusakowski,
K. Karpierz,
M. Sakowicz,
G. Valusis,
D. Seliuta,
I. Kasalynas,
A. El Fatimy,
Y. Meziani,
T. Otsuji
Abstract:
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves res…
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
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Submitted 15 July, 2009;
originally announced July 2009.
