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Optimizing GPU Cache Policies for MI Workloads
Authors:
Johnathan Alsop,
Matthew D. Sinclair,
Srikant Bharadwaj,
Alexandru Dutu,
Anthony Gutierrez,
Onur Kayiran,
Michael LeBeane,
Sooraj Puthoor,
Xianwei Zhang,
Tsung Tai Yeh,
Bradford M. Beckmann
Abstract:
In recent years, machine intelligence (MI) applications have emerged as a major driver for the computing industry. Optimizing these workloads is important but complicated. As memory demands grow and data movement overheads increasingly limit performance, determining the best GPU caching policy to use for a diverse range of MI workloads represents one important challenge. To study this, we evaluate…
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In recent years, machine intelligence (MI) applications have emerged as a major driver for the computing industry. Optimizing these workloads is important but complicated. As memory demands grow and data movement overheads increasingly limit performance, determining the best GPU caching policy to use for a diverse range of MI workloads represents one important challenge. To study this, we evaluate 17 MI applications and characterize their behaviors using a range of GPU caching strategies. In our evaluations, we find that the choice of caching policy in GPU caches involves multiple performance trade-offs and interactions, and there is no one-size-fits-all GPU caching policy for MI workloads. Based on detailed simulation results, we motivate and evaluate a set of cache optimizations that consistently match the performance of the best static GPU caching policies.
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Submitted 30 September, 2019;
originally announced October 2019.
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Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air
Authors:
Xiaohui Tang,
Laurent A. Francis,
Constantin Augustin Dutu,
Nicolas Reckinger,
Jean-Pierre Raskin
Abstract:
We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps wit…
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We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps within one unique process step for application to complex circuits. Therefore, this method provides high throughput and it is suitable for large-scale production. To demonstrate the feasibil- ity of the proposed fabrication method, nanogap resistive switches have been built and characterized. They exhibit a pronounced hysteresis with up to 103 on/off conductance ratios in air. Our results indicate that the voltages for initially electroforming the de- vice to the switch state are determinated by the nanogap sizes. However, the set and reset voltages of the device do not strongly dependent on the nanogap widths. These phenomena could be helpful to understand how the resistive switching is established.
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Submitted 19 March, 2013;
originally announced March 2013.
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Erbium Silicide Growth in the Presence of Residual Oxygen
Authors:
Nicolas Reckinger,
Xiaohui Tang,
Sylvie Godey,
Emmanuel Dubois,
Adam Laszcz,
Jacek Ratajczak,
Alexandru Vlad,
Constantin Augustin Dutu,
Jean-Pierre Raskin
Abstract:
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited,…
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The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.
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Submitted 25 October, 2011;
originally announced October 2011.
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Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Authors:
Nicolas Reckinger,
Claude Poleunis,
Emmanuel Dubois,
Constantin Augustin Dutu,
Xiaohui Tang,
Arnaud Delcorte,
Jean-Pierre Raskin
Abstract:
The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealin…
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The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.
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Submitted 25 October, 2011;
originally announced October 2011.
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Imaging Coulomb Islands in a Quantum Hall Interferometer
Authors:
B. Hackens,
F. Martins,
S. Faniel,
C. A. Dutu,
H. Sellier,
S. Huant,
M. Pala,
L. Desplanque,
X. Wallart,
V. Bayot
Abstract:
In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electro…
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In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states.
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Submitted 21 October, 2010;
originally announced October 2010.
