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Stabilization of interfaces for double-cation halide perovskites with AVA2FAPb2I7 additives
Authors:
Lev O. Luchnikov,
Ekaterina A. Ilicheva,
Victor A. Voronov,
Prokhor A. Alekseev,
Mikhail S. Dunaevskiy,
Vladislav Kalinichenko,
Vladimir Ivanov,
Aleksandra Furasova,
Daria A. Krupanova,
Ekaterina V. Tekshina,
Sergey A. Kozyukhin,
Dmitry S. Muratov,
Maria I. Voronova,
Danila S. Saranin,
Eugene I. Terukov
Abstract:
The use of mixed cation absorber composition was considered as an efficient strategy to mitigate the degradation effects in halide perovskite solar cells. Despite the reports about partial stabilization at elevated temperatures, unfavorable phase transition after thermocycling and electric field-driven corrosion remains critical bottlenecks of perovskite thin-films semiconductors. In this work, we…
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The use of mixed cation absorber composition was considered as an efficient strategy to mitigate the degradation effects in halide perovskite solar cells. Despite the reports about partial stabilization at elevated temperatures, unfavorable phase transition after thermocycling and electric field-driven corrosion remains critical bottlenecks of perovskite thin-films semiconductors. In this work, we developed stabilized heterostructures based on CsFAPbI3, modified with mechanically synthesized quasi-2D perovskite incorporating the 5-ammonium valeric acid cation (AVA2FAPb2I7). We found that integration of AVA2FAPb2I7 into grain boundaries boosts phase resilience under harsh thermocycling from -10 up to 100 C and suppresses transitions, as well as decomposition to PbI2. The rapid oxidation of metal contacts in the multi-layer stacks with non-passivated CsFAPbI3 was effectively suppressed in the fabricated heterostructure. A comprehensive interface study of the copper electrode contact revealed that the incorporation of AVA2FAPb2I7 stabilized the lead and iodine states and suppressed contamination of FA cation in ambient conditions. Meanwhile, the metal-perovskite interface remained predominantly in the Cu(0)-Cu(I) state. The observed stabilization in perovskite heterostructure was attributed to an increased activation energy for delta-phase accumulation at the grain boundaries combined with reduced ionic diffusion. The obtained results opened important highlights for the mechanisms of the improved phase stability after thermal cycling and mitigation of the interface corrosion and under an applied electric field.
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Submitted 28 February, 2025;
originally announced February 2025.
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Unified mechanism of the surface Fermi level pinning in III-As nanowires
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
G. E. Cirlin,
R. R. Reznik,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level.…
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Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al$_{x}$Ga$_{1-x}$As and Ga$_{x}$In$_{1-x}$As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.
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Submitted 17 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
D. A. Kirilenko,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under…
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We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO$_{x}$. The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals occurs. Observed transformation of WZ-GaAs to $β$-Ga$_{2}$O$_{3}$ nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/$β$-Ga$_{2}$O$_{3}$ for optoelectronic and photonic applications.
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Submitted 17 January, 2017;
originally announced January 2017.
