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Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs
Authors:
John Daniel,
Zheng Sun,
Xuejian Zhang,
Yuanqiu Tan,
Neil Dilley,
Zhihong Chen,
Joerg Appenzeller
Abstract:
Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barri…
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Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic Magnetic Tunnel Junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, through integrating stochastic MTJs with 2D-MoS$_{2}$ FETs, the first on-chip realization of a key p-bit building block displaying voltage-controllable stochasticity is demonstrated. In addition, supported by circuit simulations, this work provides a careful analysis of the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. This understanding of the interplay between the characteristics of the transistors and the MTJ is vital for the construction of a fully functioning p-bit, making the design rules presented in this article key for future experimental implementations of scaled on-chip p-bit networks.
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Submitted 16 October, 2023; v1 submitted 21 August, 2023;
originally announced August 2023.
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A Magnetoelectric Memory Device Based on Pseudo-Magnetization
Authors:
Tingting Shen,
Orchi Hassan,
Neil R. Dilley,
Kerem Y. Camsari,
Joerg Appenzeller
Abstract:
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be ma…
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We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nanomagnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance (FMR) measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.
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Submitted 16 June, 2023; v1 submitted 4 February, 2022;
originally announced February 2022.
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Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations
Authors:
Ying Wang,
Xinyu Liu,
Seul-Ki Bac,
Jacek K. Furdyna,
Badih A. Assaf,
Maksym Zhukovskyi,
Tatyana Orlova,
Neil R Dilley,
Leonid P. Rokhinson
Abstract:
We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements re…
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We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.
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Submitted 17 June, 2021;
originally announced June 2021.
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Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting
Authors:
S. -K. Bac,
K. Koller,
F. Lux,
J. Wang,
L. Riney,
K. Borisiak,
W. Powers,
M. Zhukovskyi,
T. Orlova,
M. Dobrowolska,
J. K. Furdyna,
N. R. Dilley,
L. P. Rokhinson,
Y. Mokrousov,
R. J. McQueeney,
O. Heinonen,
X. Liu,
B. A. Assaf
Abstract:
Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul…
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Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.
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Submitted 20 April, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
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Electric field control of interaction between magnons and quantum spin defects
Authors:
Abhishek Bharatbhai Solanki,
Simeon I. Bogdanov,
Avinash Rustagi,
Neil R. Dilley,
Tingting Shen,
Mohammad Mushfiqur Rahman,
Wenqi Tong,
Punyashloka Debashis,
Zhihong Chen,
Joerg Appenzeller,
Yong P. Chen,
Vladimir M. Shalaev,
Pramey Upadhyaya
Abstract:
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical mo…
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Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.
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Submitted 24 May, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Bounded verification of message-passing concurrency in Go using Promela and Spin
Authors:
Nicolas Dilley,
Julien Lange
Abstract:
This paper describes a static verification framework for the message-passing fragment of the Go programming language. Our framework extracts models that over-approximate the message-passing behaviour of a program. These models, or behavioural types, are encoded in Promela, hence can be efficiently verified with Spin. We improve on previous works by verifying programs that include communication-rel…
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This paper describes a static verification framework for the message-passing fragment of the Go programming language. Our framework extracts models that over-approximate the message-passing behaviour of a program. These models, or behavioural types, are encoded in Promela, hence can be efficiently verified with Spin. We improve on previous works by verifying programs that include communication-related parameters that are unknown at compile-time, i.e., programs that spawn a parameterised number of threads or that create channels with a parameterised capacity. These programs are checked via a bounded verification approach with bounds provided by the user.
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Submitted 2 April, 2020;
originally announced April 2020.
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Magnetic field tuned quantum criticality of heavy fermion system YbPtBi
Authors:
E. D. Mun,
S. L. Bud'ko,
C. Martin,
H. Kim,
M. A. Tanatar,
J. -H. Park,
T. Murphy,
G. M. Schmiedeshoff,
N. Dilley,
R. Prozorov,
P. C. Canfield
Abstract:
In this paper, we present the systematic measurements of the temperature and magnetic field dependences of the thermodynamic and transport properties of the Yb-based heavy fermion YbPtBi for temperatures down to 0.02 K with magnetic fields up to 140 kOe to address the possible existence of a field-tuned quantum critical point. Measurements of magnetic field and temperature dependent resistivity, s…
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In this paper, we present the systematic measurements of the temperature and magnetic field dependences of the thermodynamic and transport properties of the Yb-based heavy fermion YbPtBi for temperatures down to 0.02 K with magnetic fields up to 140 kOe to address the possible existence of a field-tuned quantum critical point. Measurements of magnetic field and temperature dependent resistivity, specific heat, thermal expansion, Hall effect, and thermoelectric power indicate that the AFM order can be suppressed by applied magnetic field of $H_{c}$ $\sim$ 4 kOe. In the $H-T$ phase diagram of YbPtBi, three regimes of its low temperature states emerges: (I) AFM state, characterized by spin density wave (SDW) like feature, which can be suppressed to $T$ = 0 by the relatively small magnetic field of $H_{c}$ $\sim$ 4\,kOe, (II) field induced anomalous state in which the electrical resistivity follows $Δρ(T) \propto T^{1.5}$ between $H_{c}$ and $\sim$ 8 kOe, and (III) Fermi liquid (FL) state in which $Δρ(T) \propto T^{2}$ for $H \geq$ 8 kOe. Regions I and II are separated at $T$ = 0 by what appears to be a quantum critical point. Whereas region III appears to be a FL associated with the hybridized 4$f$ states of Yb, region II may be a manifestation of a spin liquid state.
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Submitted 15 February, 2013; v1 submitted 3 November, 2012;
originally announced November 2012.
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Quantum fluctuations and strong mass renormalization in NiCl2-4SC(NH2)2
Authors:
Y. Kohama,
A. Sologubenko,
N. R. Dilley,
V. S. Zapf,
M. Jaime,
J. Mydosh,
A. Paduan-Filho,
K. Al-Hassanieh,
P. Sengupta,
S. Gangadharaiah,
A. L. Chernyshev,
C. D. Batista
Abstract:
In a number of quantum paramagnets, magnetic field can induce a quantum phase transition to an antiferromagnetic state which exists for a range of fields Hc1 < H < Hc2. Generally, these compounds exhibit a significant asymmetry in their properties at low- and high-field transitions. Here we present detailed specific heat and thermal conductivity measurements in NiCl2-4SC(NH2)2 together with analyt…
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In a number of quantum paramagnets, magnetic field can induce a quantum phase transition to an antiferromagnetic state which exists for a range of fields Hc1 < H < Hc2. Generally, these compounds exhibit a significant asymmetry in their properties at low- and high-field transitions. Here we present detailed specific heat and thermal conductivity measurements in NiCl2-4SC(NH2)2 together with analytical and numerical results. We show that the asymmetry is caused by a strong renormalization of the effective mass of spin excitations due to quantum fluctuations for H<Hc1 that are absent for H<Hc2.
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Submitted 3 December, 2010; v1 submitted 31 August, 2010;
originally announced September 2010.
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Magnetothermopower in Nd1-xEuxNiO3 compounds
Authors:
V. B. Barbeta,
R. F. Jardim,
M. T. Escote,
N. R. Dilley
Abstract:
We have measured magnetization M(T,H), electrical resistivity ro(T,H), thermal conductivity k(T,H), and thermopower S(T,H) of polycrystalline samples of Nd1-xEuxNiO3; 0 <= x <= 0.35; as a function of temperature and external magnetic field. The data indicate a metal-insulator transition (MI) in a wide range of temperature (200 < TMI < 325 K). The magnetic susceptibility X(T) data, after the subt…
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We have measured magnetization M(T,H), electrical resistivity ro(T,H), thermal conductivity k(T,H), and thermopower S(T,H) of polycrystalline samples of Nd1-xEuxNiO3; 0 <= x <= 0.35; as a function of temperature and external magnetic field. The data indicate a metal-insulator transition (MI) in a wide range of temperature (200 < TMI < 325 K). The magnetic susceptibility X(T) data, after the subtraction of the rare-earth contribution, exhibit a Curie-Weiss like behavior at temperatures above TMI. Although a clear antiferromagnetic AF transition of the Ni sub-lattice is observed at TN <= TMI, X(T) still increases down to 5 K, suggesting a heterogeneous ground state. The thermal conductivity of the NdNiO3 compound is not affected by an external magnetic field of 90 kOe in a wide range of temperature, and its temperature dependence below 15 K is approximately quadratic, strongly suggesting the presence of disorder. S(T) is negative above TMI and varies linearly with temperature. Below TMI, S(T) does not follow the expected behavior of insulating compounds. There is a minimum close to 120 K, and S(T) changes its sign at T ~ 30 K, indicating a competition between two types of charge carriers. A pronounced peak in S(T) at TS ~ 20 K does not follow the expected phonon-drag temperature dependence either above or below TS and the peak remains unaltered under magnetic fields up to 90 kOe. However, its magnitude is enhanced by ~ 25 % with applied magnetic field, exhibiting a clear magnetothermopower effect. The combined results indicate a coexistence of ordered and disordered phases below TN and that an applied magnetic field is suitable for enhancing the thermoelectric properties close to TS.
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Submitted 20 March, 2007;
originally announced March 2007.
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A universal relationship between magnetization and local structure changes below the ferromagnetic transition in La_{1-x}Ca_xMnO_3; evidence for magnetic dimers
Authors:
L. Downward,
F. Bridges,
S. Bushart,
J. J. Neumeier,
N. Dilley,
L. Zhou
Abstract:
We present extensive X-ray Absorption Fine Structure (XAFS) measurements on La_{1-x}Ca_xMnO_3 as a function of B-field (to 11T) and Ca concentration, x (21-45%). These results reveal local structure changes (associated with polaron formation) that depend only on the magnetization for a given sample, irrespective of whether the magnetization is achieved through a decrease in temperature or an app…
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We present extensive X-ray Absorption Fine Structure (XAFS) measurements on La_{1-x}Ca_xMnO_3 as a function of B-field (to 11T) and Ca concentration, x (21-45%). These results reveal local structure changes (associated with polaron formation) that depend only on the magnetization for a given sample, irrespective of whether the magnetization is achieved through a decrease in temperature or an applied magnetic field. Furthermore, the relationship between local structure and magnetization depends on the hole doping. A model is proposed in which a filamentary magnetization initially develops via the aggregation of pairs of Mn atoms involving a hole and an electron site. These pairs have little distortion and it is likely that they pre-form at temperatures above T_c.
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Submitted 12 May, 2005; v1 submitted 1 July, 2004;
originally announced July 2004.
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Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN
Authors:
H. X. Liu,
Stephen Y. Wu,
R. K. Singh,
Lin Gu,
David J. Smith,
N. R. Dilley,
L. Montes,
M. B. Simmonds,
N. Newman
Abstract:
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction th…
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We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction that follows the exponential law expected for variable range hopping between localized states. Hall measurements on a Cr-GaN sample indicate a mobility of 0.06 cm^2/V.s, which falls in the range characteristic of hopping conduction, and a free carrier density (1.4E20/cm^3), which is similar in magnitude to the measured magnetically-active Cr concentration (4.9E19/cm^3). A large negative magnetoresistance is attributed to scattering from loose spins associated with non-ferromagnetic impurities. The results indicate that ferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands.
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Submitted 22 September, 2004; v1 submitted 3 February, 2004;
originally announced February 2004.
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Optical Properties of MFe_4P_12 filled skutterudites
Authors:
S. V. Dordevic,
N. R. Dilley,
E. D. Bauer,
D. N. Basov,
M. B. Maple,
L. Degiorgi
Abstract:
Infrared reflectance spectroscopy measurements were made on four members of the MFe_4P_12 family of filled skutterudites, with M=La, Th, Ce and U. In progressing from M=La to U the system undergoes a metal-insulator transition. It is shown that, although the filling atom induces such dramatic changes in the transport properties of the system, it has only a small effect on lattice dynamics. We di…
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Infrared reflectance spectroscopy measurements were made on four members of the MFe_4P_12 family of filled skutterudites, with M=La, Th, Ce and U. In progressing from M=La to U the system undergoes a metal-insulator transition. It is shown that, although the filling atom induces such dramatic changes in the transport properties of the system, it has only a small effect on lattice dynamics. We discuss this property of the compounds in the context of their possible thermoelectric applications.
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Submitted 3 June, 1999;
originally announced June 1999.
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Evidence for a common physical description of non-Fermi-liquid behavior in f-electron systems
Authors:
M. C. de Andrade,
R. Chau,
R. P. Dickey,
N. R. Dilley,
E. J. Freeman,
D. A. Gajewski,
M. B. Maple,
R. Movshovich,
A. H. Castro Neto,
G. E. Castilla,
B. A. Jones
Abstract:
The non-Fermi-liquid (NFL) behavior observed in the low temperature specific heat $C(T)$ and magnetic susceptibility $χ(T)$ of f-electron systems is analyzed within the context of a recently developed theory based on Griffiths singularities. Measurements of $C(T)$ and $χ(T)$ in the systems $Th_{1-x}U_{x}Pd_{2}Al_{3}$, $Y_{1-x}U_{x}Pd_3$, and $UCu_{5-x}M_{x}$ (M = Pd, Pt) are found to be consiste…
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The non-Fermi-liquid (NFL) behavior observed in the low temperature specific heat $C(T)$ and magnetic susceptibility $χ(T)$ of f-electron systems is analyzed within the context of a recently developed theory based on Griffiths singularities. Measurements of $C(T)$ and $χ(T)$ in the systems $Th_{1-x}U_{x}Pd_{2}Al_{3}$, $Y_{1-x}U_{x}Pd_3$, and $UCu_{5-x}M_{x}$ (M = Pd, Pt) are found to be consistent with $C(T)/T \propto χ(T) \propto T^{-1+λ}$ predicted by this model with $λ<1$ in the NFL regime. These results suggest that the NFL properties observed in a wide variety of f-electron systems can be described within the context of a common physical picture.
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Submitted 7 February, 1998;
originally announced February 1998.
