Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Authors:
Corentin Lemoine,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Sara Ruiz Daza,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a n…
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CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern.
This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
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Submitted 27 March, 2025;
originally announced March 2025.
The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Authors:
Sara Ruiz Daza,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Corentin Lemoine,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflo…
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The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
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Submitted 15 May, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
