Anisotropic expansion of a thermal dipolar Bose gas
Authors:
Yijun Tang,
Andrew G. Sykes,
Nathaniel Q. Burdick,
Jack M. DiSciacca,
Dmitry S. Petrov,
Benjamin L. Lev
Abstract:
We report on the anisotropic expansion of ultracold bosonic dysprosium gases at temperatures above quantum degeneracy and develop a quantitative theory to describe this behavior. The theory expresses the post-expansion aspect ratio in terms of temperature and microscopic collisional properties by incorporating Hartree-Fock mean-field interactions, hydrodynamic effects, and Bose-enhancement factors…
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We report on the anisotropic expansion of ultracold bosonic dysprosium gases at temperatures above quantum degeneracy and develop a quantitative theory to describe this behavior. The theory expresses the post-expansion aspect ratio in terms of temperature and microscopic collisional properties by incorporating Hartree-Fock mean-field interactions, hydrodynamic effects, and Bose-enhancement factors. Our results extend the utility of expansion imaging by providing accurate thermometry for dipolar thermal Bose gases, reducing error in expansion thermometry from tens of percent to only a few percent. Furthermore, we present a simple method to determine scattering lengths in dipolar gases, including near a Feshbach resonance, through observation of thermal gas expansion.
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Submitted 28 June, 2016;
originally announced June 2016.
Trapping ultracold gases near cryogenic materials with rapid reconfigurability
Authors:
Matthew A. Naides,
Richard W. Turner,
Ruby A. Lai,
Jack M. DiSciacca,
Benjamin L. Lev
Abstract:
We demonstrate a novel atom chip trapping system that allows the placement and high-resolution imaging of ultracold atoms within microns from any <100 um-thin, UHV-compatible material, while also allowing sample exchange with minimal experimental downtime. The sample is not connected to the atom chip, allowing rapid exchange without perturbing the atom chip or laser cooling apparatus. Exchange of…
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We demonstrate a novel atom chip trapping system that allows the placement and high-resolution imaging of ultracold atoms within microns from any <100 um-thin, UHV-compatible material, while also allowing sample exchange with minimal experimental downtime. The sample is not connected to the atom chip, allowing rapid exchange without perturbing the atom chip or laser cooling apparatus. Exchange of the sample and retrapping of atoms has been performed within a week turnaround, limited only by chamber baking. Moreover, the decoupling of sample and atom chip provides the ability to independently tune the sample temperature and its position with respect to the trapped ultracold gas, which itself may remain in the focus of a high-resolution imaging system. As a first demonstration of this new system, we have confined a 700-nK cloud of 8x10^4 87Rb atoms within 100 um of a gold-mirrored 100-um-thick silicon substrate. The substrate was cooled to 35 K without use of a heat shield, while the atom chip, 120 um away, remained at room temperature. Atoms may be imaged and retrapped every 16 s, allowing rapid data collection.
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Submitted 8 November, 2013;
originally announced November 2013.
