-
Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers
Authors:
S. Nath,
I. Turan,
L. Desvignes,
L. Largeau,
O. Mauguin,
M. Túnica,
M. Amato,
C. Renard,
G. Hallais,
D. Débarre,
F. Chiodi
Abstract:
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Doping; 2) by ion implantation, followed by nanosecond laser ann…
▽ More
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Doping; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B doping affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$.
△ Less
Submitted 3 April, 2024;
originally announced April 2024.
-
STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$
Authors:
G. Hallais,
G. Patriarche,
L. Desvignes,
D. Débarre,
F. Chiodi
Abstract:
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the…
▽ More
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. When increasing B incorporation, we increasingly observe small precipitates, filaments with higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural deformation, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity.
△ Less
Submitted 30 September, 2022; v1 submitted 9 August, 2022;
originally announced August 2022.
-
Evidence of boron pairs in highly boron laser doped silicon
Authors:
Léonard Desvignes,
Francesca Chiodi,
Géraldine Hallais,
Dominique Débarre,
Giacomo Priante,
Feng Liao,
Guilhem Pacot,
Bernard Sermage
Abstract:
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Doping). The boron concentration varies thus nearly linearly with the number of process repetitio…
▽ More
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Doping). The boron concentration varies thus nearly linearly with the number of process repetitions. However, it is not the case for the hole concentration which tends to saturate at high boron concentration. The difference between boron and hole concentration increases as the square of boron concentration, pointing towards the formation of boron pairs as the dominant contribution to the increase of inactive boron.
△ Less
Submitted 6 July, 2022;
originally announced July 2022.
-
Tunable high speed atomic rotor in Bi$_{2}$Se$_{3}$ revealed by current noise
Authors:
Léonard Desvignes,
Vasily S. Stolyarov,
Marco Aprili,
Freek Massee
Abstract:
The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of a vast array of atomic scale devices and structures ranging from nanoscale motors and switches to quantum corrals. Molecular motors in particular have attracted considerable attention in view of their potential for assembly into complex nanoscale machines. W…
▽ More
The ability to manipulate individual atoms and molecules using a scanning tunnelling microscope (STM) has been crucial for the development of a vast array of atomic scale devices and structures ranging from nanoscale motors and switches to quantum corrals. Molecular motors in particular have attracted considerable attention in view of their potential for assembly into complex nanoscale machines. Whereas the manipulated atoms or molecules are usually on top of a substrate, motors embedded in a lattice can be very beneficial for bottom-up construction, and may additionally be used to probe the in uence of the lattice on the electronic properties of the host material. Here, we present the discovery of controlled manipulation of a rotor in Fe doped Bi$_{2}$Se$_{3}$. We find that the current into the rotor, which can be finely tuned with the voltage, drives omni-directional switching between three equivalent orientations, each of which can be frozen in at small bias voltage. Using current fluctuation measurements at 1MHz and model simulations, we estimate that switching rates of hundreds of kHz for sub-nA currents are achieved.
△ Less
Submitted 1 February, 2021;
originally announced February 2021.
