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Simulation of Atomic Layer Deposition with a Quantum Computer
Authors:
Evgeny Plekhanov,
Georgia Prokopiou,
Michal Krompiec,
Viktor Radovic,
Pierre Desjardins,
Pluton Pullumbi,
David Muñoz Ramo
Abstract:
In this work, we present the study of an atomic layer deposition (ALD) of zirconium by means of a quantum computation on an emulator representing the features of an architecture based on qubits implemented on carbon nanotubes. ALD process control is key in several technological applications such as spintronics, catalysis and renewable energy storage. We first derive a large ab-initio model of the…
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In this work, we present the study of an atomic layer deposition (ALD) of zirconium by means of a quantum computation on an emulator representing the features of an architecture based on qubits implemented on carbon nanotubes. ALD process control is key in several technological applications such as spintronics, catalysis and renewable energy storage. We first derive a large ab-initio model of the precursor molecule approaching the infinite hydroxylated silicon (100) surface. In particular, we optimize geometry in three configurations: reactants, transition state and products. Subsequently, we derive an effective small cluster model for each state. Atomic valence active space (AVAS) transformation is then performed on these small clusters, leading to an effective qubit Hamiltonian, which is solved using the Variational Quantum Eigensolver (VQE) algorithm. We study the convergence of the reaction activation barrier with respect to the active space size and benchmark quantum calculations on a noiseless emulator and on an emulator representing a carbon nanotube qubit architecture, including an appropriate noise model and post-selection error mitigation. These calculations reveal an excellent agreement between the two emulation modes. Our VQE calculations provide the multi-configurational corrections to the single determinant DFT and HF states and pave the way for the routine quantum calculations of ALD reactions.
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Submitted 3 April, 2025;
originally announced April 2025.
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Surface induced magnetization reversal of MnP nanoclusters embedded in GaP
Authors:
Christian Lacroix,
Samuel Lambert-Milot,
Patrick Desjardins,
Remo A. Masut,
David Menard
Abstract:
We investigate the quasi-static magnetic behavior of ensembles of non-interacting ferromagnetic nanoparticles consisting of MnP nanoclusters embedded in GaP(001) epilayers grown at 600, 650 and 700°C. We use a phenomenological model, in which surface effects are included, to reproduce the experimental hysteresis curves measured as a function of temperature (120-260 K) and direction of the applied…
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We investigate the quasi-static magnetic behavior of ensembles of non-interacting ferromagnetic nanoparticles consisting of MnP nanoclusters embedded in GaP(001) epilayers grown at 600, 650 and 700°C. We use a phenomenological model, in which surface effects are included, to reproduce the experimental hysteresis curves measured as a function of temperature (120-260 K) and direction of the applied field. The slope of the hysteresis curve during magnetization reversal is determined by the MnP nanoclusters size distribution, which is a function of the growth temperature. Our results show that the coercive field is very sensitive to the strength of the surface anisotropy, which reduces the energy barrier between the two states of opposite magnetization. Notably, this reduction in the energy barrier increases by a factor of 3 as the sample temperature is lowered from 260 to 120 K.
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Submitted 5 October, 2015;
originally announced October 2015.
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Phonon-Induced Transparency in Functionalized Single Layer Graphene
Authors:
Bruno Rousseau,
François Lapointe,
Minh Nguyen,
Maxime Biron,
Etienne Gaufrès,
Saman Choubak,
Zheng Han,
Vincent Bouchiat,
Patrick Desjardins,
Michel Côté,
Richard Martel
Abstract:
Herein, intervalley scattering is exploited to account for anomalous antiresonances in the infrared spectra of doped and disordered single layer graphene. We present infrared spectroscopy measurements of graphene grafted with iodophenyl moieties in both reflection microscopy and transmission configurations. Asymmetric transparency windows at energies corresponding to phonon modes near the Γ and K…
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Herein, intervalley scattering is exploited to account for anomalous antiresonances in the infrared spectra of doped and disordered single layer graphene. We present infrared spectroscopy measurements of graphene grafted with iodophenyl moieties in both reflection microscopy and transmission configurations. Asymmetric transparency windows at energies corresponding to phonon modes near the Γ and K points are observed, in contrast to the featureless spectrum of pristine graphene. These asymmetric antiresonances are demonstrated to vary as a function of the chemical potential. We propose a model which involves coherent intraband scattering with defects and phonons, thus relaxing the optical selection rule forbidding access to ${\bf q} \neq$ Γ phonons. This interpretation of the new phenomenon is supported by our numerical simulations that reproduce the experimental features.
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Submitted 18 August, 2015; v1 submitted 30 July, 2014;
originally announced July 2014.
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High-dimensional quantum key distribution using dispersive optics
Authors:
Jacob Mower,
Zheshen Zhang,
Pierre Desjardins,
Catherine Lee,
Jeffrey H. Shapiro,
Dirk Englund
Abstract:
We propose a high-dimensional quantum key distribution (QKD) protocol that employs temporal correlations of entangled photons. The security of the protocol relies on measurements by Alice and Bob in one of two conjugate bases, implemented using dispersive optics. We show that this dispersion-based approach is secure against general coherent attacks. The protocol is additionally compatible with sta…
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We propose a high-dimensional quantum key distribution (QKD) protocol that employs temporal correlations of entangled photons. The security of the protocol relies on measurements by Alice and Bob in one of two conjugate bases, implemented using dispersive optics. We show that this dispersion-based approach is secure against general coherent attacks. The protocol is additionally compatible with standard fiber telecommunications channels and wavelength division multiplexers. We offer multiple implementations to enhance the transmission rate and describe a heralded qudit source that is easy to implement and enables secret-key generation at up to 100 Mbps at over 2 bits per photon.
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Submitted 26 May, 2013; v1 submitted 16 October, 2012;
originally announced October 2012.
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Fano Resonances in Mid-Infrared Spectra of Single-Walled Carbon Nanotubes
Authors:
François Lapointe,
Étienne Gaufrés,
Isabelle Tremblay,
Nathalie Y-Wa Tang,
Patrick Desjardins,
Richard Martel
Abstract:
This work revisits the physics giving rise to the carbon nanotubes phonon bands in the mid- infrared. Our measurements of doped and undoped samples of single-walled carbon nanotubes in Fourier transform infrared spectroscopy show that the phonon bands exhibit an asymmetric lineshape and that their effective cross-section is enhanced upon doping. We relate these observations to electron-phonon coup…
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This work revisits the physics giving rise to the carbon nanotubes phonon bands in the mid- infrared. Our measurements of doped and undoped samples of single-walled carbon nanotubes in Fourier transform infrared spectroscopy show that the phonon bands exhibit an asymmetric lineshape and that their effective cross-section is enhanced upon doping. We relate these observations to electron-phonon coupling or, more specifically, to a Fano resonance phenomenon. We note that only the dopant-induced intraband continuum couples to the phonon modes and that defects induced in the sidewall increase the resonance probabilities.
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Submitted 14 March, 2012;
originally announced March 2012.
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Evidence of valence band perturbations in GaAsN/GaAs(001): A combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation
Authors:
S. Turcotte,
S. Larouche,
J. -N. Beaudry,
L. Martinu,
R. A. Masut,
P. Desjardins,
R. Leonelli
Abstract:
The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experim…
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The contribution of the fundamental gap E_ as well as those of the E_ + Delta(so) and E+ transitions to the dielectric function of GaAs1-xNx alloys near the band edge were determined from variable-angle spectroscopic ellipsometry and modulated photoreflectance spectroscopy analyses. The oscillator strength of the E_ optical transition increases weakly with nitrogen incorporation. The two experimental techniques independently reveal that not only the oscillator strength of the E+ transition but also that of E_ + Delta(so) become larger compared to that of the fundamental gap as the N content increases. Since the same conduction band is involved in both the E_ transition and its split-off replica, these results reveal that adding nitrogen in GaAs1-xNx alloys affects not only the conduction but also the valence bands.
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Submitted 15 May, 2008;
originally announced May 2008.
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Magnetotransport in the insulating regime of Mn doped GaAs
Authors:
Louis-Francois Arsenault,
B. Movaghar,
P. Desjardins,
A. Yelon
Abstract:
We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localized states above the valence band mobility edge. Both hopping and activated band transport contributions are included. The anomalous Hall current from band states is very different from the hopping Hall current and has e…
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We consider transport in the insulating regime of GaMnAs. We calculate the resistance, magnetoresitance and Hall effect, assuming that the Fermi energy is in the region of localized states above the valence band mobility edge. Both hopping and activated band transport contributions are included. The anomalous Hall current from band states is very different from the hopping Hall current and has extrinsic (skew) and intrinsic (Luttinger) contributions. Comparison with experiment allows us to assess the degree to which band and hopping contribution determine each of the three transport coefficients in a particular temperature range. There are strong indications that the insulating state transport in GaMnAs is controlled primarily by extended state, band edge, transport rather than by variable range hopping, as reported in the literature.
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Submitted 9 July, 2008; v1 submitted 10 February, 2008;
originally announced February 2008.
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Transport in the metallic regime of Mn doped III-V Semiconductors
Authors:
Louis-Francois Arsenault,
B. Movaghar,
P. Desjardins,
A. Yelon
Abstract:
The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo formalism. Both normal (NHE) and anomalous contributions (AHE) to the Hall effect are examined. We use a simple model density of states to describe the undoped valence band. The CPA bandstructure evolves into a spin split…
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The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo formalism. Both normal (NHE) and anomalous contributions (AHE) to the Hall effect are examined. We use a simple model density of states to describe the undoped valence band. The CPA bandstructure evolves into a spin split band caused by the $p-d$ exchange scattering with Mn dopants. This gives rise to a strong magnetoresistance, which decreases sharply with temperature. The temperature ($T$) dependence of the resistance is due to spin disorder scattering (increasing with $T$), CPA bandstructure renormalization and charged impurity scattering (decreasing with $T$). The calculated transport coefficients are discussed in relation to experiment, with a view of assessing the overall trends and deciding whether the model describes the right physics. This does indeed appear to be case, bearing in mind that the hopping limit needs to be treated separately, as it cannot be described within the band CPA.
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Submitted 11 January, 2008;
originally announced January 2008.
