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Formic Acid Decomposition Using Synthesized Ag/TiO2 Nanocomposite in Ethanol-Water Media Under Illumination of Near UV Light
Authors:
Ehsan Pipelzadeh,
Mehrab Valizadeh Derakhshan,
Ali Akbar Babaluo,
Mohammad Haghighi,
Akram Tavakoli
Abstract:
The effect of ethanol-water media on the synthesis of Ag/TiO2 nanocomposite was investigated with 0.05, 0.1 and 0.5 (wt.%) of Ag content. Ethanol was used as hole-scavenger enhancing the photodecomposition of Ag+ ions under illumination of near-UV light. The nanocomposites were further calcined to 33C and 400C under controlled atmosphere. The synthesized nanocomposites were tested for photocatalyt…
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The effect of ethanol-water media on the synthesis of Ag/TiO2 nanocomposite was investigated with 0.05, 0.1 and 0.5 (wt.%) of Ag content. Ethanol was used as hole-scavenger enhancing the photodecomposition of Ag+ ions under illumination of near-UV light. The nanocomposites were further calcined to 33C and 400C under controlled atmosphere. The synthesized nanocomposites were tested for photocatalytic efficiency decomposing formic acid as an organic pollutant under irradiation of a 4W near UV lamp with lmax at 365nm and the results were compared with that of nan-modified commercially available Degussa TiO2 (P25). The synthesized nanocomposites were characterized using XRD and SEM micrographs. The photocatalytic studies have revealed a constant overall performance for all synthesized nanocomposites. The initial rate of decomposition was observed to increase with decreasing Ag content, in the case of 0.05 wt.% having the best initial rate. Calcination of the nanocomposites was found to have activating properties on the synthesized nanocomposites where nanocomposite with 0.05 (wt.%) Ag content calcined at 300°C was distinctively advantageous over other calcined nanocomposites.
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Submitted 21 November, 2018;
originally announced November 2018.
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Tailoring topological states in silicene using different halogen-passivated Si(111) substrates
Authors:
Vahid Derakhshan,
Ali G. Moghaddam,
Davide Ceresoli
Abstract:
We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding calculations.Our results show that the Dirac character of low energy excitations in silicene is almost preserved in the presence of silicon substrate passivated by various halogens. Nevertheless, the combined effects of charge transf…
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We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding calculations.Our results show that the Dirac character of low energy excitations in silicene is almost preserved in the presence of silicon substrate passivated by various halogens. Nevertheless, the combined effects of charge transfer into the substrate, stretching of bonds between silicon atoms, and symmetry breaking which originates from van der Waals interaction, result in a gap $E_{g1}$ in the spectrum of the embedded silicene. We further take the spin-orbit interaction into account and obtain its strength and the resulting enhancement in the gap $E_{g2}=2λ$. Both $E_{g1}$ and $E_{g2}$ which contribute to the total gap, vary significantly when different halogen atoms are used for the passivation of the Si surface and for the case of iodine, they have very large values of $70$ and $23$ meV, respectively. To examine the topological properties, we calculate the projected band structure of silicene from which the tight binding parameters of the low-energy effective Hamiltonian are obtained by fitting. Our results based on Berry curvature and $\mathbb{Z}_2$ invariant reveals that silicene on halogenated Si substrates has a topological insulating state which can survive even at room temperature for the substrate with iodine and bromine at the surface. Similar to the free standing silicene, by applying a perpendicular electric field and at a certain critical value which again depends on the type of halogens, the gap closes and silicene undergoes a transition to a trivial insulating state. As a key finding, we see that the presence of halogenated substrate except for the case of fluorine enhances the robustness of the topological phases against the vertical electric field and most probably other external perturbations.
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Submitted 15 February, 2018; v1 submitted 3 June, 2017;
originally announced June 2017.
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Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon
Authors:
Vahid Derakhshan,
Hosein Cheraghchi
Abstract:
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results…
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Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magnetoresistance is achievable by changing the alignment of induced magnetization. Application of a perpendicular electric field on the parallel configuration, results in a spin field-effect transistor where a fully spin polarization occurs around the Dirac point. To be comparable our results with the one for monolayer graphene, we demonstrate that the reflection symmetry and so the parity conservation fails in bilayer graphene nanoribbons with the zigzag edges.
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Submitted 9 January, 2014;
originally announced January 2014.
