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Ultrafast dynamic Coulomb screening of X-ray core excitons in photoexcited semiconductors
Authors:
Thomas C. Rossi,
Lu Qiao,
Conner P. Dykstra,
Ronaldo Rodrigues Pela,
Richard Gnewkow,
Rachel F. Wallick,
John H. Burke,
Erin Nicholas,
Anne-Marie March,
Gilles Doumy,
D. Bruce Buchholz,
Christiane Deparis,
Jesus Zuñiga-Pérez,
Michael Weise,
Klaus Ellmer,
Mattis Fondell,
Claudia Draxl,
Renske M. van der Veen
Abstract:
Ultrafast X-ray spectroscopy has been revolutionized in recent years due to the advent of fourth-generation X-ray facilities. In solid-state materials, core excitons determine the energy and line shape of absorption features in core-level spectroscopies such as X-ray absorption spectroscopy. The screening of core excitons is an inherent many-body process that can reveal insight into charge-transfe…
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Ultrafast X-ray spectroscopy has been revolutionized in recent years due to the advent of fourth-generation X-ray facilities. In solid-state materials, core excitons determine the energy and line shape of absorption features in core-level spectroscopies such as X-ray absorption spectroscopy. The screening of core excitons is an inherent many-body process that can reveal insight into charge-transfer excitations and electronic correlations. Under non-equilibrium conditions such as after photoexcitation, however, core-exciton screening is still not fully understood. Here we demonstrate the dynamic Coulomb screening of core excitons induced by photoexcited carriers by employing X-ray transient absorption (XTA) spectroscopy with picosecond time resolution. Our interpretation is supported by state-of-the-art ab initio theory, combining constrained and real-time time-dependent density functional theory with many-body perturbation theory. Using ZnO as an archetypal wide band-gap semiconductor, we show that the Coulomb screening by photoexcited carriers at the Zn K-edge leads to a decrease in the core-exciton binding energy, which depends nonlinearly on both the excitation density and the distribution of photoexcited carriers in reciprocal space. The effect of Coulomb screening dominates over Pauli blocking in the XTA spectra. We show that dynamic core-exciton screening is also observed at other X-ray absorption edges and theoretically predict the effect of core-exciton screening on the femtosecond time scale for the case of ZnO, a major step towards hard X-ray excitonics. The results have implications for the interpretation of ultrafast X-ray spectra in general and their use in tracking charge carrier dynamics in complex materials on atomic length scales.
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Submitted 12 December, 2024; v1 submitted 2 December, 2024;
originally announced December 2024.
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Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening
Authors:
Geoffrey Kreyder,
Léa Hermet,
Pierre Disseix,
François Médard,
Martine Mihailovic,
François Réveret,
Sophie Bouchoule,
Christiane Deparis,
Jesús Zuñiga-Pérez,
Joël Leymarie
Abstract:
The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a m…
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The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature.
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Submitted 20 March, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Nickel oxide-based heterostructures with large band offsets
Authors:
Robert Karsthof,
Holger von Wenckstern,
Jesus Zuniga-Perez,
Christiane Deparis,
Marius Grundmann
Abstract:
We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence b…
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We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UV-converting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which we identify and analyse in more detail here. Furthermore, CdO/NiO contacts were studied - a heterostructure with even larger band offsets such that a type-III band alignment is achieved. This situation theoretically enables the development of a 2-dimensional electronic system consisting of topologically protected states. We present experiments demonstrating that the CdO/NiO heterostructure indeed hosts a conductive layer absent in both materials when studied separately.
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Submitted 29 October, 2019;
originally announced October 2019.
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Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Authors:
O. Jamadi,
F. Reveret,
P. Disseix,
F. Medard,
J. Leymarie,
A. Moreau,
D. Solnyshkov,
C. Deparis,
M. Leroux,
E. Cambril,
S. Bouchoule,
J. Zuniga-Perez,
G. Malpuech
Abstract:
We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of ra…
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We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons.
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Submitted 26 January, 2018; v1 submitted 1 August, 2017;
originally announced August 2017.
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Nature of resonant Raman scattering in ZnCoO films under sub-band excitation
Authors:
K. A. Avramenko,
V. P. Bryksa,
V. V. Strelchuk,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ conc…
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Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ concentration from $5$ to $15\%$. High-resolution SEM images of $Zn_{0.85}Co_{0.15}O$ film have been interpreted as inhomogeneous lateral distribution of $Co$ atoms. Two broad emission bands observed in spectra of band-to-band PL are ascribed to emission from $Zn_{1-x}Co_xO$ nano-regions enriched and depleted with $Co$. In low-temperature PL spectra under sub-band excitation of $Zn_{1-x}Co_xO$ films, there observed are intra-center optical transitions due to $Co^{2+}$ center: $^2E(G)$, $^2A_1(G)$, $^2T_1(G)$, $^4T_1(P)$, $^2T_2(G)$ $\longrightarrow$ $^4A_2(F)$. Offered is a new approach to interpretation of resonant enhancement observed in multi-phonon scattering by $LO$ phonons in $Zn_{1-x}Co_xO$ under sub-bandgap excitation combined with the extrinsic Fröhlich interaction mediated via a localized exciton bound to the isoelectronic impurity in which the electron is strongly localized at the magnetic $Co^{2+}$ ion. This conclusion is confirmed by the dependence of Raman spectra on the quantum energy of exciting radiation. It assumes formation of intermediated sub-band electron excited states of isoelectron $Co$ dopant, they are also referred to as charge transfer processes.
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Submitted 7 September, 2011;
originally announced September 2011.
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Influence of s,p-d and s-p exchange couplings on exciton splitting in (Zn,Mn)O
Authors:
W. Pacuski,
J. Suffczynski,
P. Osewski,
P. Kossacki,
A. Golnik,
J. A. Gaj,
C. Deparis,
C. Morhain,
E. Chikoidze,
Y. Dumont,
D. Ferrand,
J. Cibert,
T. Dietl
Abstract:
This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchan…
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This work presents results of near-band gap magnetooptical studies on (Zn,Mn)O epitaxial layers. We observe excitonic transitions in reflectivity and photoluminescence, that shift towards higher energies when the Mn concentration increases and split nonlinearly under the magnetic field. Excitonic shifts are determined by the s,p-d exchange coupling to magnetic ions, by the electron-hole s-p exchange, and the spin-orbit interactions. A quantitative description of the magnetoreflectivity findings indicates that the free excitons A and B are associated with the Gamma_7 and Gamma_9 valence bands, respectively, the order reversed as compared to wurtzite GaN. Furthermore, our results show that the magnitude of the giant exciton splittings, specific to dilute magnetic semiconductors, is unusual: the magnetoreflectivity data is described by an effective exchange energy N_0(beta-alpha)=+0.2+/-0.1 eV, what points to small and positive N_0 beta. It is shown that both the increase of the gap with x and the small positive value of the exchange energy N_0 beta corroborate recent theory describing the exchange splitting of the valence band in a non-perturbative way, suitable for the case of a strong p-d hybridization.
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Submitted 10 May, 2011;
originally announced May 2011.
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Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
Authors:
V. V. Strelchuk,
K. A. Avramenko,
V. P. Bryksa,
P. M. Lytvyn,
M. Ya. Valakh,
V. O. Pashchenko,
O. M. Bludov,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. T…
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We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. Temperature dependence of the carrier mobility was determined using Raman line shape analysis of the longitudinal-optical-phonon-plasmon coupled modes. It shows that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electrons between spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn(1-x)CoxO films.
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Submitted 23 March, 2011;
originally announced March 2011.
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Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co
Authors:
P. Sati,
R. Hayn,
R. Kuzian,
S. Regnier,
S. Schafer,
A. Stepanov,
C. Morhain,
C. Deparis,
M. Laugt,
M. Goiran,
Z. Golacki
Abstract:
We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We sugge…
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We report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.003-0.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in ZnO possess a strong single ion anisotropy which leads to an "easy plane" ferromagnetic state when the ferromagnetic Co-Co interaction is considered. We suggest that the peculiarities of the magnetization process of this state can be viewed as a signature of intrinsic ferromagnetism in ZnO:Co materials.
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Submitted 17 February, 2007;
originally announced February 2007.
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Antiferromagnetic interactions in single crystalline Zn1-xCoxO thin films
Authors:
P. Sati,
C. Deparis,
C. Morhain,
S. Schafer,
A. Stepanov
Abstract:
In a rather contradictory situation regarding magnetic data on Co-doped ZnO, we have succeeded in fabricating high-quality single crystalline Zn1-xCoxO (x=0.003-0.07) thin films. This gives us the possibility, for the first time, to examine the it intrinsic magnetic properties of ZnO:Co at a quantitative level and therefore to address several unsolved problems, the major one being the nature of…
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In a rather contradictory situation regarding magnetic data on Co-doped ZnO, we have succeeded in fabricating high-quality single crystalline Zn1-xCoxO (x=0.003-0.07) thin films. This gives us the possibility, for the first time, to examine the it intrinsic magnetic properties of ZnO:Co at a quantitative level and therefore to address several unsolved problems, the major one being the nature of the Co-Co interaction in the ZnO structure.
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Submitted 16 February, 2007;
originally announced February 2007.
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Effect of the s,p-d exchange interaction on the excitons in (Zn,Co)O epilayers
Authors:
W. Pacuski,
D. Ferrand,
J. Cibert,
C. Deparis,
J. A. Gaj,
P. Kossacki,
C. Morhain
Abstract:
We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very di…
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We present a spectroscopic study of (Zn,Co)O layers grown by molecular beam epitaxy on sapphire substrates. (Zn,Co)O is commonly considered as a promising candidate for being a Diluted Magnetic Semiconductor ferromagnetic at room temperature. We performed magneto-optical spectroscopy in the Faraday configuration, by applying a magnetic field up to 11 T, at temperatures down to 1.5 K. For very dilute samples (less than 0.5% Co), the giant Zeeman splitting of the A and B excitons is observed at low temperature. It is proportional to the magnetization of isolated Co ions, as calculated using the anisotropy and g-factor deduced from the spectroscopy of the d-d transitions. This demonstrates the existence of spin-carrier coupling. Electron-hole exchange within the exciton has a strong effect on the giant Zeeman splitting observed on the excitons. From the effective spin-exciton coupling, <N0(Alpha-Beta)>_X=0.4 eV, we estimate the difference of the exchange integrals for free carriers, N0|Alpha-Beta|=0.8 eV. The magnetic circular dichroism observed near the energy gap was found to be proportional to the paramagnetic magnetization of anisotropic Co ions even for higher Co contents.
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Submitted 12 August, 2005; v1 submitted 12 August, 2005;
originally announced August 2005.
