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High Impedance Granular Aluminum Ring Resonators
Authors:
Mahya Khorramshahi,
Martin Spiecker,
Patrick Paluch,
Simon Geisert,
Nicolas Gosling,
Nicolas Zapata,
Lucas Brauch,
Christian Kuebel,
Simone Dehm,
Ralph Krupke,
Wolfgang Wernsdorfer,
Ioan M. Pop,
Thomas Reisinger
Abstract:
Superconducting inductors with impedance surpassing the resistance quantum, i.e., superinductors, are important for quantum technologies because they enable the development of protected qubits, enhance coupling to systems with small electric dipole moments, and facilitate the study of phase-slip physics. We demonstrate superinductors with densely packed meandered traces of granular aluminum (grAl)…
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Superconducting inductors with impedance surpassing the resistance quantum, i.e., superinductors, are important for quantum technologies because they enable the development of protected qubits, enhance coupling to systems with small electric dipole moments, and facilitate the study of phase-slip physics. We demonstrate superinductors with densely packed meandered traces of granular aluminum (grAl) with inductances up to $4\,μ\mathrm{H}$, achieving impedances exceeding $100\,\mathrm{k}Ω$ in the $4-8\,\mathrm{GHz}$ range. Ring resonators made with grAl meandered superinductors exhibit quality factors on the order of $10^5$ in the single-photon regime and low non-linearity on the order of tens of $\mathrm{Hz}$. Depending on the grAl resistivity, at $10\,\mathrm{Hz}$, we measure frequency noise spectral densities in the range of $10^2$ to $10^3\,\mathrm{Hz}/\sqrt{\mathrm{Hz}}$. In some devices, in the single-photon regime, we observe a positive Kerr coefficient of unknown origin. Using more complex fabrication, the devices could be released from the substrate, either freestanding or suspended on a membrane, thereby further improving their impedance by a factor of three.
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Submitted 9 June, 2025;
originally announced June 2025.
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Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation
Authors:
Vaiva Nagyte,
Daniel J. Kelly,
Alexandre Felten,
Gennaro Picardi,
YuYoung Shin,
Adriana Alieva,
Robyn E. Worsley,
Khaled Parvez,
Simone Dehm,
Ralph Krupke,
Sarah J. Haigh,
Antonios Oikonomou,
Andrew J. Pollard,
Cinzia Casiraghi
Abstract:
Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and d…
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Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.
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Submitted 15 April, 2020;
originally announced June 2020.
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Low-temperature electroluminescence excitation mapping of excitons and trions in short channel monochiral carbon nanotube device
Authors:
Marco Gaulke,
Alexander Janissek,
Naga Anirudh Peyyety,
Imtiaz Alamgir,
Adnan Riaz,
Simone Dehm,
Han Li,
Uli Lemmer,
Benjamin S. Flavel,
Manfred M. Kappes,
Frank Hennrich,
Li Wei,
Yuan Chen,
Felix Pyatkov,
Ralph Krupke
Abstract:
Single walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near infrared, electrically driven, classical or non-classical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture a…
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Single walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near infrared, electrically driven, classical or non-classical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture and biasing conditions. Here we present electroluminescence spectroscopy data of ultra short channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing and no quenching is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibits cold emission and linewidths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the linewidth, absence of intensity saturation and exciton exciton annihilation, environmental effects like dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.
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Submitted 11 September, 2019;
originally announced September 2019.
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Light emission, light detection and strain sensing with nanocrystalline graphene
Authors:
Adnan Riaz,
Feliks Pyatkov,
Asiful Alam,
Simone Dehm,
Alexandre Felten,
Venkata S. K. Chakravadhanula,
Benjamin S. Flavel,
Christian Kübel,
Uli Lemmer,
Ralph Krupke
Abstract:
Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and pro…
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Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene into optical micro cavities also narrow band light emitters and detectors have been demonstrated. The devices benefit from the transparency, conductivity and processability of the atomically thin material. To this end we explore in this work the feasibility of replacing graphene by nanocrystalline graphene, a material which can be grown on dielectric surfaces without catalyst by graphitization of polymeric films. We have studied the formation of nanocrystalline graphene on various substrates and under different graphitization conditions. The samples were characterized by resistance, optical transmission, Raman, X-ray photoelectron spectroscopy, atomic force microscopy and electron microscopy measurements. The conducting and transparent wafer-scale material with nanometer grain size was also patterned and integrated into devices for studying light-matter interaction. The measurements show that nanocrystalline graphene can be exploited as an incandescent emitter and bolometric detector similar to crystalline graphene. Moreover the material exhibits piezoresistive behavior which makes nanocrystalline graphene interesting for transparent strain sensors.
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Submitted 18 October, 2016;
originally announced October 2016.
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Electroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices
Authors:
Martin H. P. Pfeiffer,
Ninette Stürzl,
Christoph W. Marquardt,
Michael Engel,
Simone Dehm,
Frank Hennrich,
Manfred M. Kappes,
Uli Lemmer,
Ralph Krupke
Abstract:
We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shape…
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We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties.
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Submitted 27 July, 2011;
originally announced July 2011.
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Dielectrophoretic Assembly of High-Density Arrays of Individual Graphene Devices for Rapid Screening
Authors:
Aravind Vijayaraghavan,
Calogero Sciascia,
Simone Dehm,
Antonio Lombardo,
Alessandro Bonetti,
Andrea C. Ferrari,
Ralph Krupke
Abstract:
We establish the use of dielectrophoresis for the directed parallel assembly of individual flakes and nanoribbons of few-layer graphene into electronic devices. This is a bottom-up approach where source and drain electrodes are prefabricated and the flakes are deposited from a solution using an alternating electric field applied between the electrodes. These devices are characterized by scanning…
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We establish the use of dielectrophoresis for the directed parallel assembly of individual flakes and nanoribbons of few-layer graphene into electronic devices. This is a bottom-up approach where source and drain electrodes are prefabricated and the flakes are deposited from a solution using an alternating electric field applied between the electrodes. These devices are characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and electron transport measurements. They are shown to be electrically active and their current carrying capacity and subsequent failure mechanism is revealed. Akin to carbon nanotubes, we show that the dielectrophoretic deposition is self-limiting to one flake per device and is scalable to ultra-large-scale integration densities, thereby enabling the rapid screening of a large number of devices.
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Submitted 4 June, 2009;
originally announced June 2009.
