Showing 1–5 of 5 results for author: Dehlinger, G

Heating of Two-Dimensional Holes in SiGe and the B = 0 Metal-Insulator Transition

Authors: R. Leturcq, D. L'Hote, R. Tourbot, V. Senz, U. Gennser, T. Ihn, K. Ensslin, G. Dehlinger, D. Grützmacher

Abstract: We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible w… ▽ More We study the resistivity vs. electric field dependence $ρ(E)$ of a 2D hole system in SiGe close to the B=0 metal-insulator transition. Using $ρ$ as a ``thermometer'' to obtain the effective temperature of the holes $T_e(E)$, we find that the $ρ(E)$ dependence can be attributed to hole heating. The hole-phonon coupling involves weakly screened piezoelectric and deformation potentials compatible with previous measurements. The damping of the Shubnikov-de Haas oscillations gives the same $T_e$ values. Thus the $ρ(E)$ dependence and the $E$-field ``scaling'' do not provide additional evidence for a quantum phase transition (QPT). We discuss how to study, in general, true $E$-field scaling and extract the ratio of the QPT characteristic lengths. △ Less

Submitted 23 July, 2001; originally announced July 2001.

Comments: latex ChauCorSub.tex, 5 files, 4 figures, 4 pages submitted to Phys. Rev. Lett

Report number: SPEC-S01/025

Analysis of the resistance in p-SiGe over a wide temperature range

Authors: V. Senz, T. Ihn, T. Heinzel, K. Ensslin, G. Dehlinger, D. Grützmacher, U. Gennser, E. H. Hwang, S. Das Sarma

Abstract: The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insu… ▽ More The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range. △ Less

Submitted 17 July, 2001; originally announced July 2001.

Comments: 4 pages with 5 figures

Single hole transistor in a p-Si/SiGe quantum well

Authors: U. Doetsch, U. Gennser, T. Heinzel, S. Luescher, C. David, G. Dehlinger, D. Gruetzmacher, K. Ensslin

Abstract: A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain. A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain. △ Less

Submitted 22 September, 2000; v1 submitted 21 September, 2000; originally announced September 2000.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 78, 341 (2001)

Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

Authors: V. Senz, T. Ihn, T. Heinzel, K. Ensslin, G. Dehlinger, D. Grutzmacher, U. Gennser

Abstract: We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a F… ▽ More We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8. △ Less

Submitted 27 April, 2000; v1 submitted 18 April, 2000; originally announced April 2000.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett., Vol. 85 No. 20, p.4357, Nov 2000

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Authors: V. Senz, T. Heinzel, T. Ihn, K. Ensslin, G. Dehlinger, D. Gruetzmacher, U. Gennser

Abstract: Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions. Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions. △ Less

Submitted 15 October, 1999; originally announced October 1999.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.B 61, R5082 (2000)