Showing 1–6 of 6 results for author: Day-Roberts, E

Altermagnets with topological order in Kitaev bilayers

Authors: Aayush Vijayvargia, Ezra Day-Roberts, Antia S. Botana, Onur Erten

Abstract: Building on recent advancements in altermagnetism, we develop a highly-frustrated magnetic model with Kitaev-like interactions that integrates key aspects of both quantum spin liquids and altermagnets. While the ground state is a gapless quantum spin liquid, our analysis indicates that an altermagnetic local order emerges upon the introduction of additional interactions that gap the excitation spe… ▽ More Building on recent advancements in altermagnetism, we develop a highly-frustrated magnetic model with Kitaev-like interactions that integrates key aspects of both quantum spin liquids and altermagnets. While the ground state is a gapless quantum spin liquid, our analysis indicates that an altermagnetic local order emerges upon the introduction of additional interactions that gap the excitation spectrum and give rise to a $\mathbb{Z}_2 $ topological order. This magnetically-fragmented topological altermagnet has fractionalized fermionic excitations with momentum-dependent splitting, in stark contrast to both standard altermagnets and Kitaev spin liquids. In addition, we discover two more altermagnetic phases, including a pseudo-altermagnet that exhibits splitting in the absence of a local order and a half-altermagnet that possesses only one type of fractionalized excitations, similar to a half-metal. We discuss experimental approaches for detecting these phases, including layer-dependent spin and heat transport. Our results highlight the rich physics that can arise due to the interplay between altermagnetism and fractionalized excitations in quantum magnets. △ Less

Submitted 12 March, 2025; originally announced March 2025.

Comments: 7 pages, 5 figures

Piezoresistivity as a Fingerprint of Ferroaxial Transitions

Authors: Ezra Day-Roberts, Rafael M. Fernandes, Turan Birol

Abstract: Recent progress in the understanding of the collective behavior of electrons and ions have revealed new types of ferroic orders beyond ferroelectricity and ferromagnetism, such as the ferroaxial state. The latter retains only rotational symmetry around a single axis and reflection symmetry with respect to a single mirror plane, both of which are set by an emergent electric toroidal dipole moment.… ▽ More Recent progress in the understanding of the collective behavior of electrons and ions have revealed new types of ferroic orders beyond ferroelectricity and ferromagnetism, such as the ferroaxial state. The latter retains only rotational symmetry around a single axis and reflection symmetry with respect to a single mirror plane, both of which are set by an emergent electric toroidal dipole moment. Due to this unusual symmetry-breaking pattern, it has been challenging to directly measure the ferroaxial order parameter, despite the increasing attention this state has drawn. Here, we show that off-diagonal components of the piezoresistivity tensor (i.e., the linear change in resistivity under strain) transform the same way as the ferroaxial moments, providing a direct probe of such order parameters. We identify two new proper ferroaxial materials through a materials database search, and use first-principles calculations to evaluate the piezoconductivity of the double-perovskite CaSnF$_6$, revealing its connection to ferroaxial order and to octahedral rotation modes. △ Less

Submitted 9 March, 2025; v1 submitted 3 May, 2024; originally announced May 2024.

Journal ref: Phys. Rev. Lett. 134, 016401 (2025)

Gating-Induced Mott Transition in NiS$_2$

Authors: Ezra Day-Roberts, Rafael M. Fernandes, Turan Birol

Abstract: NiS$_2$ has been widely regarded as a model system to study the bandwidth-controlled Mott transition, as enabled by isovalent Se chemical substitution on the S sites. Motivated by advances in electrolyte gating, we theoretically investigate the filling-controlled Mott transition induced by gating, which has the advantage of avoiding dopant disorder and stoichiometric changes. We use combined Densi… ▽ More NiS$_2$ has been widely regarded as a model system to study the bandwidth-controlled Mott transition, as enabled by isovalent Se chemical substitution on the S sites. Motivated by advances in electrolyte gating, we theoretically investigate the filling-controlled Mott transition induced by gating, which has the advantage of avoiding dopant disorder and stoichiometric changes. We use combined Density Functional Theory (DFT) and Dynamical Mean Field Theory (DMFT) to study such a filling-controlled transition and compare it with the case of bandwidth control. We draw a temperature-filling phase diagram and find that the Mott-insulator to metal transition occurs with modest added electron concentrations, well within the capabilities of existing electrolyte gating experiments. We find that there is significant incoherent weight at the Fermi level in the metallic phase when the transition is induced by gating. In contrast, the spectral weight remains rather coherent in the case of the bandwidth-controlled transition. △ Less

Submitted 11 February, 2023; v1 submitted 24 March, 2022; originally announced March 2022.

Robust Gapless Superconductivity in 4Hb-TaS$_2$

Authors: David Dentelski, Ezra Day-Roberts, Turan Birol, Rafael M. Fernandes, Jonathan Ruhman

Abstract: The superconducting TMD 4Hb-TaS$_2$ consists of alternating layers of H and T structures, which in their bulk form are metallic and Mott-insulating, respectively. Recently, this compound has been proposed as a candidate chiral superconductor, due to an observed enhancement of the muon spin relaxation at $T_c$. 4Hb-TaS$_2$ also exhibits a puzzling $T$-linear specific heat at low temperatures, which… ▽ More The superconducting TMD 4Hb-TaS$_2$ consists of alternating layers of H and T structures, which in their bulk form are metallic and Mott-insulating, respectively. Recently, this compound has been proposed as a candidate chiral superconductor, due to an observed enhancement of the muon spin relaxation at $T_c$. 4Hb-TaS$_2$ also exhibits a puzzling $T$-linear specific heat at low temperatures, which is unlikely to be caused by disorder. Elucidating the origin of this behavior is an essential step in discerning the true nature of the superconducting ground state. Here, we propose a simple model that attributes the $T$-linear specific heat to the emergence of a robust multi-band gapless superconducting state. We show that an extended regime of gapless superconductivity naturally appears when the pair-breaking scattering rate on distinct Fermi-surface pockets differs significantly, and the pairing interaction is predominantly intra-pocket. Using a tight-binding model derived from first-principle calculations, we show that the pair-breaking scattering rate promoted by slow magnetic fluctuations on the T layers, which arise from proximity to a Mott transition, can be significantly different in the various H-layer dominated Fermi pockets depending on their hybridization with T-layer states. Thus, our results suggest that the ground state of 4Hb-TaS$_2$ consists of Fermi pockets displaying gapless superconductivity, which are shunted by superconducting Fermi pockets that are nearly decoupled from the T-layers. △ Less

Submitted 25 March, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Comments: 15 pages, 5 figures, two appendices

Journal ref: Phys. Rev. B 103, 224522 (2021)

Nature of Protected Zero Energy States in Penrose Quasicrystals

Authors: Ezra Day-Roberts, Rafael M. Fernandes, Alex Kamenev

Abstract: The electronic spectrum of the Penrose rhombus quasicrystal exhibits a macroscopic fraction of exactly degenerate zero energy states. In contrast to other bipartite quasicrystals, such as the kite-and-dart one, these zero energy states cannot be attributed to a global mismatch $Δn$ between the number of sites in the two sublattices that form the quasicrystal. Here, we argue that these zero energy… ▽ More The electronic spectrum of the Penrose rhombus quasicrystal exhibits a macroscopic fraction of exactly degenerate zero energy states. In contrast to other bipartite quasicrystals, such as the kite-and-dart one, these zero energy states cannot be attributed to a global mismatch $Δn$ between the number of sites in the two sublattices that form the quasicrystal. Here, we argue that these zero energy states are instead related to a local mismatch $Δn(\bf r)$. Although $Δn(\bf r)$ averages to zero, its staggered average over self-organized domains gives the correct number of zero energy states. Physically, the local mismatch is related to a hidden structure of nested self-similar domains that support the zero energy states. This allows us to develop a real space renormalization-group scheme, which yields the scaling law for the fraction of zero energy states, $Z$, versus size of their support domain, $N$, as $Z\propto N^{-η}$ with $η=1-\ln 2/\ln(1+τ) \approx 0.2798$ (where $τ$ is the golden ratio). It also reproduces the known total fraction of the zero energy states, $81-50τ\approx 0.0983$. We also show that the exact degeneracy of these states is protected against a wide variety of local perturbations, such as irregular or random hopping amplitudes, magnetic field, random dilution of the lattice, etc. We attribute this robustness to the hidden domain structure and speculate about its underlying topological origin. △ Less

Submitted 27 April, 2020; v1 submitted 26 April, 2020; originally announced April 2020.

Comments: 12 pages, 18 figures

Journal ref: Phys. Rev. B 102, 064210 (2020)

Contrasting Ferromagnetism in Pyrite FeS$_2$ Induced by Chemical Doping versus Electrostatic Gating

Authors: Ezra Day-Roberts, Turan Birol, Rafael M. Fernandes

Abstract: Recent advances in electrostatic gating provide a novel way to modify the carrier concentration in materials via electrostatic means instead of chemical doping, thus minimizing the impurity scattering. Here, we use first-principles Density Functional Theory combined with a tight-binding approach to compare and contrast the effects of electrostatic gating and Co chemical doping on the ferromagnetic… ▽ More Recent advances in electrostatic gating provide a novel way to modify the carrier concentration in materials via electrostatic means instead of chemical doping, thus minimizing the impurity scattering. Here, we use first-principles Density Functional Theory combined with a tight-binding approach to compare and contrast the effects of electrostatic gating and Co chemical doping on the ferromagnetic transition of FeS$_2$, a transition metal disulfide with the pyrite structure. Using tight-binding parameters obtained from maximally-localized Wannier functions, we calculate the magnetic susceptibility across a wide doping range. We find that electrostatic gating requires a higher electron concentration than the equivalent in Co doping to induce ferromagnetism via a Stoner-like mechanism. We attribute this behavior to the formation of a narrow Co band near the bottom of the conduction band under chemical doping, which is absent in the electrostatic gating case. Our results reveal that the effects of electrostatic gating go beyond a simple rigid band shift, and highlight the importance of the changes in the crystal structure promoted by gating. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Materials 4, 054405 (2020)