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Experimental Observation of Strong Coupling Between an Epsilon-Near-Zero Mode in a Deep Subwavelength Nanofilm and a Gap Plasmon Mode
Authors:
Joshua R. Hendrickson,
Shivashankar Vangala,
Chandriker K. Dass,
Ricky Gibson,
Kevin Leedy,
Dennis Walker,
Justin W. Cleary,
Ting S. Luk,
Junpeng Guo
Abstract:
Strong coupling is a phenomenon which occurs when the interaction between two resonance systems is so strong that the oscillatory energy exchange between them exceeds all dissipative loss channels. Each resonance can then no longer be described individually but only as a part of the coupled, hybrid system. Here, we show that strong coupling can occur in a deep subwavelength nanofilm supporting an…
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Strong coupling is a phenomenon which occurs when the interaction between two resonance systems is so strong that the oscillatory energy exchange between them exceeds all dissipative loss channels. Each resonance can then no longer be described individually but only as a part of the coupled, hybrid system. Here, we show that strong coupling can occur in a deep subwavelength nanofilm supporting an epsilon near zero mode which is integrated into a metal-insulator-metal gap plasmon structure. To generate an epsilon near zero mode resonance in the short-wave infrared region, an indium tin oxide nanofilm of ~lambda/100 thickness is used. A polariton splitting value of 27%, corresponding to a normalized coupling rate of 0.135, is experimentally demonstrated. Simulations indicate that much larger coupling rates, well within the ultra-strong regime where the energy exchange rate is comparable with the frequency of light, are possible.
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Submitted 9 January, 2018;
originally announced January 2018.
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Neutral and Charged Inter-Valley Biexcitons in Monolayer MoSe$_2$
Authors:
Kai Hao,
Lixiang Xu,
Judith F. Specht,
Philipp Nagler,
Kha Tran,
Akshay Singh,
Chandriker Kavir Dass,
Christian Schüller,
Tobias Korn,
Marten Richter,
Andreas Knorr,
Xiaoqin Li,
Galan Moody
Abstract:
In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods alone. Here, we implem…
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In atomically thin transition metal dichalcogenides (TMDs), reduced dielectric screening of the Coulomb interaction leads to strongly correlated many-body states, including excitons and trions, that dominate the optical properties. Higher-order states, such as bound biexcitons, are possible but are difficult to identify unambiguously using linear optical spectroscopy methods alone. Here, we implement polarization-resolved two-dimensional coherent spectroscopy to unravel the complex optical response of monolayer MoSe$_2$ and identify multiple higher-order correlated states. Decisive signatures of neutral and charged inter-valley biexcitons appear in cross-polarized two-dimensional spectra as distinct resonances with respective ~20 meV and ~5 meV binding energies--similar to recent calculations using variational and Monte Carlo methods. A theoretical model taking into account the valley-dependent optical selection rules reveals the specific quantum pathways that give rise to these states. Inter-valley biexcitons identified here, comprised of neutral and charged excitons from different valleys, offer new opportunities for creating exotic exciton-polariton condensates and for developing ultrathin biexciton lasers and polarization-entangled photon sources.
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Submitted 7 September, 2016;
originally announced September 2016.
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Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2
Authors:
Kai Hao,
Lixiang Xu,
Philipp Nagler,
Akshay Singh,
Kha Tran,
Chandriker Kavir Dass,
Christian Schüller,
Tobias Korn,
Xiaoqin Li,
Galan Moody
Abstract:
The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal…
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The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport properties in optoelectronic devices, excitons may be relevant through exciton-trion coupling and conversion phenomena. In this work, we reveal the coherent and incoherent nature of exciton-trion coupling and the relevant timescales in monolayer MoSe2 using optical two-dimensional coherent spectroscopy. Coherent interaction between excitons and trions is definitively identified as quantum beating of cross-coupling peaks that persists for a few hundred femtoseconds. For longer times up to 10 ps, surprisingly, the relative intensity of the cross-coupling peaks increases, which is attributed to incoherent energy transfer likely due to phonon-assisted up-conversion and down-conversion processes that are efficient even at cryogenic temperature.
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Submitted 26 May, 2016;
originally announced May 2016.
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Direct Measurement of Exciton Valley Coherence in Monolayer WSe$_2$
Authors:
Kai Hao,
Galan Moody,
Fengcheng Wu,
Chandriker Kavir Dass,
Lixiang Xu,
Chang-Hsaio Chen,
Ming-Yang Li,
Lain-Jong Li,
Allan H. MacDonald,
Xiaoqin Li
Abstract:
In crystals, energy band extrema in momentum space can be identified by their valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition met…
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In crystals, energy band extrema in momentum space can be identified by their valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition metal dichalcogenides. However, the valley coherence time, a key quantity for manipulating the valley pseudospin, has never been measured in any material. In this work, we use a sequence of laser pulses to resonantly generate a coherent superposition of excitons (Coulomb-bound electron-hole pairs) in opposite valleys of monolayer WSe$_2$. The imposed valley coherence persists for approximately one hundred femtoseconds. We propose that the electron-hole exchange interaction provides an important decoherence mechanism in addition to exciton population decay. Our work provides critical insight into the requirements and strategies for optical manipulation of the valley pseudospin for future valleytronics applications.
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Submitted 29 September, 2015;
originally announced September 2015.
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Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides
Authors:
Galan Moody,
Chandriker Kavir Dass,
Kai Hao,
Chang-Hsiao Chen,
Lain-Jong Li,
Akshay Singh,
Kha Tran,
Genevieve Clark,
Xiaodong Xu,
Gunnar Bergauser,
Ermin Malic,
Andreas Knorr,
Xiaoqin Li
Abstract:
Monolayer transition metal dichalcogenides feature Coulomb-bound electron-hole pairs (excitons) with exceptionally large binding energy and coupled spin and valley degrees of freedom. These unique attributes have been leveraged for electrical and optical control of excitons for atomically-thin optoelectronics and valleytronics. The development of such technologies relies on understanding and quant…
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Monolayer transition metal dichalcogenides feature Coulomb-bound electron-hole pairs (excitons) with exceptionally large binding energy and coupled spin and valley degrees of freedom. These unique attributes have been leveraged for electrical and optical control of excitons for atomically-thin optoelectronics and valleytronics. The development of such technologies relies on understanding and quantifying the fundamental properties of the exciton. A key parameter is the intrinsic exciton homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions. Using optical coherent two-dimensional spectroscopy, we provide the first experimental determination of the exciton homogeneous linewidth in monolayer transition metal dichalcogenides, specifically tungsten diselenide (WSe2). The role of exciton-exciton and exciton-phonon interactions in quantum decoherence is revealed through excitation density and temperature dependent linewidth measurements. The residual homogeneous linewidth extrapolated to zero density and temperature is ~1.5 meV, placing a lower bound of approximately 0.2 ps on the exciton radiative lifetime. The exciton quantum decoherence mechanisms presented in this work are expected to be ubiquitous in atomically-thin semiconductors.
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Submitted 12 October, 2014;
originally announced October 2014.
