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Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride
Authors:
Meryem Bouaziz,
Aymen Mahmoudi,
Geoffroy Kremer,
Julien Chaste,
Cesar Gonzalez,
Yannick J. Dappe,
Francois Bertran,
Patrick Le Fevre,
Marco Pala,
Fabrice Oehler,
Jean-Christophe Girard,
Abdelkarim Ouerghi
Abstract:
Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structura…
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Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type doping of InTe that we also confirm using angle-resolved photoemission spectroscopy.
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Submitted 17 August, 2023;
originally announced August 2023.
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Enhancement of the Solar Water Splitting Efficiency Mediated by Surface Segregation in Ti-doped Hematite Nanorods
Authors:
Stefan Stanescu,
Théo Alun,
Yannick J. Dappe,
Dris Ihiawakrim,
Ovidiu Ersen,
Dana Stanescu
Abstract:
Band engineering is employed thoroughly and targets technologically scalable photoanodes for solar water splitting applications. Complex and costly recipes are necessary, often for average performances. Here we report simple photoanode growth and thermal annealing, with effective band engineering results. By comparing Ti-doped hematite photoanodes annealed under Nitrogen to photoanodes annealed in…
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Band engineering is employed thoroughly and targets technologically scalable photoanodes for solar water splitting applications. Complex and costly recipes are necessary, often for average performances. Here we report simple photoanode growth and thermal annealing, with effective band engineering results. By comparing Ti-doped hematite photoanodes annealed under Nitrogen to photoanodes annealed in air, we found strongly enhanced photocurrent, of more than 200 % in the first case. Using electrochemical impedance spectroscopy and synchrotron X-rays spectromicroscopies we demonstrate that oxidized surface states and increased density of charge carriers are responsible for the enhanced photoelectrochemical activity. Surface states are found to be related to the formation of pseudo-brookite clusters by surface Ti segregation. Spectro-ptychography is used for the first time at Ti L3 absorption edge to isolate Ti chemical coordination arising from pseudo-brookite clusters contribution. Correlated with electron microscopy investigation and Density Functional Theory (DFT) calculations, the synchrotron spectromicroscopy data prove unambiguously the origin of the better photoelectrochemical activity of N2- annealed Ti-doped hematite nanorods. Finally, we present here a handy and cheap surface engineering method, beyond the known oxygen vacancy doping, allowing a net gain in the photoelectrochemical activity for the hematite-based photoanodes.
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Submitted 16 April, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Negative Differential Resistance in Spin-Crossover Molecular Devices
Authors:
Dongzhe Li,
Yongfeng Tong,
Kaushik Bairagi,
Massine Kelai,
Yannick J. Dappe,
Jérôme Lagoute,
Yann Girard,
Sylvie Rousset,
Vincent Repain,
Cyrille Barreteau,
Mads Brandbyge,
Alexander Smogunov,
Amandine Bellec
Abstract:
We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates…
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We demonstrate, based on low-temperature scanning tunneling microscopy (STM) and spectroscopy, a pronounced negative differential resistance (NDR) in spin-crossover (SCO) molecular devices, where a Fe$^{\text{II}}$ SCO molecule is deposited on surfaces. The STM measurements reveal that the NDR is robust with respect to substrate materials, temperature, and the number of SCO layers. This indicates that the NDR is intrinsically related to the electronic structure of the SCO molecule. Experimental results are supported by density functional theory (DFT) with non-equilibrium Green's functions (NEGF) calculations and a generic theoretical model. While the DFT+NEGF calculations reproduce NDR for a special atomically-sharp STM tip, the effect is attributed to the energy-dependent tip density of states rather than the molecule itself. We, therefore, propose a Coulomb blockade model involving three molecular orbitals with very different spatial localization as suggested by the molecular electronic structure.
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Submitted 9 August, 2022; v1 submitted 28 June, 2022;
originally announced June 2022.
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Fast Fisher-Lee approach for conductance calculations on BTB-based molecular junctions: effects of isomerization and electrode coupling
Authors:
Sylvain Pitié,
Mahamadou Seydou,
Yannick. J. Dappe,
Pascal Martin,
François Maurel,
Jean Christophe Lacroix
Abstract:
In this work, we have implemented the Fisher-Lee formalism to couple non-equilibrium Green functions with tight-binding Density Functional to tackle large molecular systems. This method is used to determine the decay constant of a set of oligomers based on seven different monomers taken from the literature in the non-resonant tunneling regime. Results show good agreement with experimental measurem…
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In this work, we have implemented the Fisher-Lee formalism to couple non-equilibrium Green functions with tight-binding Density Functional to tackle large molecular systems. This method is used to determine the decay constant of a set of oligomers based on seven different monomers taken from the literature in the non-resonant tunneling regime. Results show good agreement with experimental measurements. The approach is then applied to explore the conformational pattern effect as well as the asymmetry and the strength of coupling with the electrode of bisthienylbenzene oligomers sandwiched between gold (Au),titanium (Ti)and graphene (G)) electrodes The results indicate that conformational patterns have low impact on the conductance, since the delocalization of π-electrons exhibits similar behavior for all the conformations explored. The calculated attenuation factor is found to be comparable with the strength of contact coupling (Ti > Au = G). Electronic analysis of metal-molecule interactions reveals the ionic nature of Ti-C bonds, through the emergence of a local dipole contributing to the work function variation of 0.35 eV. In addition, the Ti d-orbitals are found to be strongly coupled with the lowest unoccupied orbital (LUMO) of BTB, thus facilitating charge transfer from Ti to the molecule, at the origin of this strong interfacial dipole. However, the Au-C bond is found to be similar to the C-C bond, with pure covalent character. The results confirm the hole transport mechanism observed experimentally in the cases of Au-(BTB)n-Au and Au-(BTB)n-Ti, and predict possible combined mechanism of both hole and electron transport in the case of Ti(BTB)n-Ti.
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Submitted 16 July, 2021;
originally announced July 2021.
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Silicene nanoribbons on an insulating thin film
Authors:
Khalid Quertite,
Hanna Enriquez,
Nicolas Trcera,
Yongfeng Tong,
Azzedine Bendounan,
Andrew J. Mayne,
Gérald Dujardin,
Pierre Lagarde,
Abdallah El kenz,
Abdelilah Benyoussef,
Yannick J. Dappe,
Abdelkader Kara,
Hamid Oughaddou
Abstract:
Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we r…
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Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we report the first experimental evidence of silicene sheet on an insulating NaCl thin film. This work represents a major breakthrough; for the study of the intrinsic properties of silicene, and by extension to other 2D materials that have so far only been grown on metal surfaces.
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Submitted 27 December, 2020;
originally announced December 2020.
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Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
T. Pierron,
C. González,
M. Sicot,
B. Kierren,
L. Moreau,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop…
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Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.
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Submitted 6 May, 2021; v1 submitted 29 November, 2020;
originally announced November 2020.
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Phosphorus Pentamers: Floating Nanoflowers form a 2D Network
Authors:
Wei Zhang,
Hanna Enriquez,
Yongfeng Tong,
Andrew J. Mayne,
Azzedine Bendounan,
Yannick J. Dappe,
Abdelkader Kara,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducti…
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We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducting character with a band gap of 1.20 eV. This work presents the formation at low temperature (LT) of a new polymorphic 2D phosphorus layer composed of a floating 2D pentamer structure. The smooth curved terrace edges and a lack of any clear crystallographic orientation with respect to the Ag(111) substrate at room temperature indicates a smooth potential energy surface that is reminiscent of a liquid-like growth phase. This is confirmed by density functional theory (DFT) calculations that find a small energy barrier of only 0.17 eV to surface diffusion of the pentamers (see Supplemental Material). The formation of extended, homogeneous domains is a key ingredient to opening a new avenue to integrate this new 2D material into electronic devices.
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Submitted 4 November, 2020;
originally announced November 2020.
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Decoupling Molybdenum Disulfide from its Substrate by Cesium Intercalation
Authors:
Roberto Sant,
Simone Lisi,
Van Dung Nguyen,
Estelle Mazaleyrat,
Ana Cristina Gómez Herrero,
Olivier Geaymond,
Valérie Guisset,
Philippe David,
Alain Marty,
Matthieu Jamet,
Claude Chapelier,
Laurence Magaud,
Yannick J. Dappe,
Marco Bianchi,
Philip Hofmann,
Gilles Renaud,
Johann Coraux
Abstract:
Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address…
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Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address the case of a single-layer of molybdenum disulfide (MoS$_2$), deposited on a gold substrate, and intercalated with cesium (Cs) in ultra-clean conditions (ultrahigh vacuum). We show that intercalation decouples MoS$_2$ from its substrate. We reveal electron transfer from Cs to MoS$_2$, relative changes in the energy of the valence band maxima, and electronic disorder induced by structural disorder in the intercalated Cs layer. Besides, we find an abnormal lattice expansion of MoS$_2$, which we relate to immediate vicinity of Cs. Intercalation is thermally activated, and so is the reverse process of de-intercalation. Our work opens the route to a microscopic understanding of a process of relevance in several possible future technologies, and shows a way to manipulate the properties of two-dimensional dichalcogenides by "under-cover" functionalization.
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Submitted 10 June, 2020;
originally announced June 2020.
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Symmetry aspects of spin-filtering in molecular junctions: hybridization and quantum interference effects
Authors:
Dongzhe Li,
Rajdeep Banerjee,
Sourav Mondal,
Ivan Maliyov,
Mariya Romanova,
Yannick J. Dappe,
Alexander Smogunov
Abstract:
Control and manipulation of electric current and, especially, its degree of spin polarization (spin filtering) across single molecules are currently of great interest in the field of molecular spintronics. We explore one possible strategy based on the modification of nanojunction symmetry which can be realized, for example, by a mechanical strain. Such modification can activate new molecular orbit…
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Control and manipulation of electric current and, especially, its degree of spin polarization (spin filtering) across single molecules are currently of great interest in the field of molecular spintronics. We explore one possible strategy based on the modification of nanojunction symmetry which can be realized, for example, by a mechanical strain. Such modification can activate new molecular orbitals which were inactive before due to their orbital mismatch with the electrode's conduction states. This can result in several important consequences such as (i) quantum interference effects appearing as Fano-like features in electron transmission and (ii) the change in molecular level hybridization with the electrode's states. We argue that the symmetry change can affect very differently two majority- and minority-spin conductances and thus alter significantly the resulting spin-filtering ratio as the junction symmetry is modified. We illustrate the idea for two basic molecular junctions: Ni/benzene/Ni (perpendicular vs tilted orientations) and Ni/Si chain/Ni (zigzag vs linear chains). In both cases, one highest occupied molecular orbital (HOMO) and one lowest unoccupied molecular orbital (LUMO) (out of HOMO and LUMO doublets) are important. In particular, their destructive interference with other orbitals leads to dramatic suppression of majority-spin conductance in low-symmetry configurations. For a minority-spin channel, on the contrary, the conductance is strongly enhanced when the symmetry is lowered due to an increase in hybridization strength. We believe that our results may offer a potential route for creating molecular devices with a large on-off ratio of spin polarization via quantum interference effects.
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Submitted 18 August, 2019;
originally announced August 2019.
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Perfect spin filtering by symmetry in molecular junctions
Authors:
Dongzhe Li,
Yannick J. Dappe,
Alexander Smogunov
Abstract:
Obtaining highly spin-polarized currents in molecular junctions is crucial and desirable for nanoscale spintronics devices. Motivated by our recent symmetry-based theoretical argument for complete blocking of one spin conductance channel in atomic-scale junctions [A. Smogunov and Y. J. Dappe, Nano Lett. 15, 3552 (2015)], we explore the generality of the proposed mechanism and the degree of achieve…
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Obtaining highly spin-polarized currents in molecular junctions is crucial and desirable for nanoscale spintronics devices. Motivated by our recent symmetry-based theoretical argument for complete blocking of one spin conductance channel in atomic-scale junctions [A. Smogunov and Y. J. Dappe, Nano Lett. 15, 3552 (2015)], we explore the generality of the proposed mechanism and the degree of achieved spin-polarized current for various ferromagnetic electrodes (Ni, Co, Fe) and two different molecules, quaterthiophene and p-quaterphenyl. A simple analysis of the spin-resolved local density of states of a free electrode allowed us to identify the Fe(110) as the most optimal electrode, providing perfect spin filtering and high conductance at the same time. These results are confirmed by $ab$ $initio$ quantum transport calculations and are similar to those reported previously for model junctions. It is found, moreover, that the distortion of the p-quaterphenyl molecule plays an important role, reducing significantly the overall conductance.
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Submitted 11 June, 2019;
originally announced June 2019.
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Tuning spin filtering by anchoring groups in benzene derivative molecular junctions
Authors:
Dongzhe Li,
Yannick J. Dappe,
Alexander Smogunov
Abstract:
One of the important issues of molecular spintronics is the control and manipulation of charge transport and, in particular, its spin polarization through single-molecule junctions. Using $ab$ $initio$ calculations, we explore spin-polarized electron transport across single benzene derivatives attached with six different anchoring groups (S, CH$_3$S, COOH, CNH$_2$NH, NC and NO$_2$) to Ni(111) elec…
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One of the important issues of molecular spintronics is the control and manipulation of charge transport and, in particular, its spin polarization through single-molecule junctions. Using $ab$ $initio$ calculations, we explore spin-polarized electron transport across single benzene derivatives attached with six different anchoring groups (S, CH$_3$S, COOH, CNH$_2$NH, NC and NO$_2$) to Ni(111) electrodes. We find that molecule-electrode coupling, conductance and spin polarization (SP) of electric current can be modified significantly by anchoring groups. In particular, a high spin polarization (SP $>$ 80%) and a giant magnetoresistance (MR $>$ 140%) can be achieved for NO$_2$ terminations and, more interestingly, SP can be further enhanced (up to 90%) by a small voltage. The S and CH$_3$S systems, on the contrary, exhibit rather low SP while intermediate values are found for COOH and CNH$_2$NH groups. The results are analyzed in detail and explained by orbital symmetry arguments, hybridization and spatial localization of frontier molecular orbitals. We hope that our comparative and systematic studies will provide valuable quantitative information for future experimental measurements on that kind of systems and will be useful for designing high-performance spintronics devices.
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Submitted 8 June, 2019; v1 submitted 4 June, 2019;
originally announced June 2019.
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Electronic band structure of ultimately thin silicon oxide on Ru(0001)
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
S. Lisi,
T. Pierron,
C. González Pascual,
M. Sicot,
B. Kierren,
D. Malterre,
J. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w…
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Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
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Submitted 12 February, 2019;
originally announced February 2019.
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Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide
Authors:
Debora Pierucci,
Hugo Henck,
Zeineb Ben Aziza,
Carl H. Naylor,
A. Balan,
Julien E. Rault,
M. G. Silly,
Yannick J. Dappe,
François Bertran,
Patrick Le Fevre,
F. Sirotti,
A. T Charlie Johnson,
Abdelkarim Ouerghi
Abstract:
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic…
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Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
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Submitted 8 June, 2018; v1 submitted 7 June, 2018;
originally announced June 2018.
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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
Authors:
Sudipta Dubey,
Simone Lisi,
Goutham Nayak,
Felix Herziger,
Van-Dung Nguyen,
Toai Le Quang,
Vladimir Cherkez,
César González,
Yannick J. Dappe,
Kenji Watanabe,
Takashi Taniguchi,
Laurence Magaud,
Pierre Mallet,
Jean-Yves Veuillen,
Raul Arenal,
Laëtitia Marty,
Julien Renard,
Nedjma Bendiab,
Johann Coraux,
Vincent Bouchiat
Abstract:
Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using diffe…
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Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS2 -- a natural one and one prepared at high pressure and high temperature -- and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS2. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.
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Submitted 7 May, 2018;
originally announced May 2018.
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Pulling and Stretching a Molecular Wire to Tune its Conductance
Authors:
Gaël Reecht,
Hervé Bulou,
Fabrice Scheurer,
Virginie Speisser,
Fabrice Mathevet,
César González,
Yannick J. Dappe,
Guillaume Schull
Abstract:
A scanning tunnelling microscope is used to pull a polythiophene wire from a Au(111) surface while measuring the current traversing the junction. Abrupt current increases measured during the lifting procedure are associated to the detachment of molecular sub-units, in apparent contradiction with the expected exponential decrease of the conductance with wire length. \textit{Ab initio} simulations r…
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A scanning tunnelling microscope is used to pull a polythiophene wire from a Au(111) surface while measuring the current traversing the junction. Abrupt current increases measured during the lifting procedure are associated to the detachment of molecular sub-units, in apparent contradiction with the expected exponential decrease of the conductance with wire length. \textit{Ab initio} simulations reproduce the experimental data and demonstrate that this unexpected behavior is due to release of mechanical stress in the wire, paving the way to mechanically gated single-molecule electronic devices.
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Submitted 5 August, 2015; v1 submitted 18 June, 2015;
originally announced June 2015.
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Electroluminescence from a polythiophene molecular wire suspended in a plasmonic scanning tunneling microscope junction
Authors:
Gaël Reecht,
Fabrice Scheurer,
Virginie Speisser,
Yannick J. Dappe,
Fabrice Mathevet,
Guillaume Schull
Abstract:
The electroluminescence of a polythiophene wire suspended between two metallic electrodes is probed using a scanning tunneling microscope. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mec…
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The electroluminescence of a polythiophene wire suspended between two metallic electrodes is probed using a scanning tunneling microscope. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.
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Submitted 10 January, 2014;
originally announced January 2014.
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Effect of van der Waals forces on the stacking of coronenes encapsulated in a single-wall carbon nanotube and many-body excitation spectrum
Authors:
Yannick J. Dappe,
José I. Martínez
Abstract:
We investigate the geometry, stability, electronic structure and optical properties of C24H12 coronenes encapsulated in a single-wall (19,0) carbon nanotube. By an adequate combination of advanced electronic-structure techniques, involving weak and van derWaals interaction, as well as many-body effects for establishing electronic properties and excitations, we have accurately characterized this hy…
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We investigate the geometry, stability, electronic structure and optical properties of C24H12 coronenes encapsulated in a single-wall (19,0) carbon nanotube. By an adequate combination of advanced electronic-structure techniques, involving weak and van derWaals interaction, as well as many-body effects for establishing electronic properties and excitations, we have accurately characterized this hybrid carbon nanostructure, which arises as a promising candidate for opto-electronic nanodevices. In particular, we show that the structure of the stacked coronenes inside the nanotube is characterized by a rotation of every coronene with respect to its neighbors through van derWaals interaction, which is of paramount importance in these systems. We also suggest a tentative modification of the system in order this particular rotation to be observed experimentally. A comparison between the calculated many-body excitation spectrum of the systems involved reveals a pronounced optical red-shift with respect to the coronene-stacking gas-phase. The origin of this red-shift is explained in terms of the confinement of the coronene molecules inside the nanotube, showing an excellent agreement with the available experimental evidence.
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Submitted 1 August, 2012;
originally announced August 2012.
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Understanding the Electronic Transport Through Single Noble Gas Atoms
Authors:
L. A. Zotti,
M. Bürkle,
Y. J. Dappe,
F. Pauly,
J. C. Cuevas
Abstract:
We present a theoretical study of the conductance of atomic junctions comprising single noble gas atoms (He, Ne, Ar, Kr, and Xe) coupled to gold electrodes. The aim is to elucidate how the presence of noble gas atoms affects the electronic transport through metallic atomic-size contacts. Our analysis, based on density functional theory and including van der Waals interactions, shows that for the l…
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We present a theoretical study of the conductance of atomic junctions comprising single noble gas atoms (He, Ne, Ar, Kr, and Xe) coupled to gold electrodes. The aim is to elucidate how the presence of noble gas atoms affects the electronic transport through metallic atomic-size contacts. Our analysis, based on density functional theory and including van der Waals interactions, shows that for the lightest elements (He and Ne) no significant current flows through the noble gas atoms and their effect is to reduce the conductance of the junctions by screening the interaction between the gold electrodes. This explains the observations reported in metallic atomic-size contacts with adsorbed He atoms. Conversely, the heaviest atoms (Kr and Xe) increase the conductance due to the additional current path provided by their valence p states.
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Submitted 27 October, 2011;
originally announced October 2011.
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Bending modes, elastic constants and mechanical stability of graphitic systems
Authors:
G. Savini,
Y. J. Dappe,
S. Öberg,
J. -C. Charlier,
M. I. Katsnelson,
A. Fasolino
Abstract:
The thermodynamic and mechanical properties of graphitic systems are strongly dependent on the shear elastic constant C44. Using state-of-the-art density functional calculations, we provide the first complete determination of their elastic constants and exfoliation energies. We show that stacking misorientations lead to a severe lowering of C44 of at least one order of magnitude. The lower exfolia…
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The thermodynamic and mechanical properties of graphitic systems are strongly dependent on the shear elastic constant C44. Using state-of-the-art density functional calculations, we provide the first complete determination of their elastic constants and exfoliation energies. We show that stacking misorientations lead to a severe lowering of C44 of at least one order of magnitude. The lower exfoliation energy and the lower C44 (more bending modes) suggest that flakes with random stacking should be easier to exfoliate than the ones with perfect or rhombohedral stacking. We also predict ultralow friction behaviour in turbostratic graphitic systems.
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Submitted 21 August, 2010;
originally announced August 2010.
