-
Efficiency versus effort: a better way to compare best photovoltaic research cell efficiencies?
Authors:
Phillip J. Dale,
Michael A. Scarpulla
Abstract:
Frequently, trends in record AM1.5 power-conversion efficiencies versus time, such as the NREL efficiency chart, are used to analyze the relative merits of different photovoltaic material technologies. However, this approach belies the effort expended in achieving these levels of performance. We introduce cumulative publications as a proxy for total R&D efforts and find surprisingly that silicon,…
▽ More
Frequently, trends in record AM1.5 power-conversion efficiencies versus time, such as the NREL efficiency chart, are used to analyze the relative merits of different photovoltaic material technologies. However, this approach belies the effort expended in achieving these levels of performance. We introduce cumulative publications as a proxy for total R&D efforts and find surprisingly that silicon, Cu(In,Ga)Se2 (CIGSe), CdTe, and halide perovskite technologies have each followed essentially the same learning curve of 20-24% efficiency within 10,000 publications and a consistent marginal rate of 5% efficiency increase per factor of 10 in publications. While learning spillover from non-PV technologies, cross-pollination from other PV technologies, and hidden commercial effort are not accounted for by this metric, this analysis still yields useful and novel insights into PV technology trajectories. Trajectories below this learning curve have required more total effort per performance and plateaus of efficiency stagnation at large numbers of publications may indicate (but do not guarantee) the existence of fundamental barriers to commercially relevant performance. Lastly, examples to watch are identified for technologies currently exhibiting higher marginal slopes, including some that appeared dormant by this metric in past years.
△ Less
Submitted 19 November, 2022; v1 submitted 27 September, 2022;
originally announced September 2022.
-
Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages
Authors:
Thomas Paul Weiss,
Ignacio Minguez-Bacho,
Elena Zuccalà,
Michele Melchiorre,
Nathalie Valle,
Brahime El Adib,
Tadahiro Yokosawa,
Erdmann Spiecker,
Julien Bachmann,
Phillip J. Dale,
Susanne Siebentritt
Abstract:
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recom…
▽ More
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation.
△ Less
Submitted 26 April, 2022;
originally announced April 2022.
-
Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment
Authors:
Mohit Sood,
Alberto Lomuscio,
Florian Werner,
Aleksandra Nikolaeva,
Phillip J. Dale,
Michele Melchiorre,
Jerome Guillot,
Daniel Abou-Ras,
Susanne Siebentritt
Abstract:
Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S…
▽ More
Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S-PDT) to passivate the interface of CuInS2 thin films grown under Cu-rich conditions, which show excellent qFLs values, but much lower VOCs. The CuInS2 absorbers are treated in three different S-containing solutions at 80 oC. Absolute calibrated photoluminescence and current-voltage measurements demonstrate a reduction of the deficit between qFLs and VOC in the best S-PDT device by almost one third compared to the untreated device. Analysis of temperature dependence of the open-circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transient measurements reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S-PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution based S-treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors.
△ Less
Submitted 29 January, 2021;
originally announced January 2021.
