Showing 1–28 of 28 results for author: Costache, M V

Magnetoacoustic waves in a highly magnetostrictive FeGa thin film

Authors: Marc Rovirola, M. Waqas Khaliq, Blai Casals, Adrian Begué, Neven Biskup, Noelia Coton, Joan Manel Hernàndez, Miguel Angel Niño, Michael Foerster, Alberto Hernández-Mínguez, Rocío Ranchal, Marius V. Costache, Antoni García-Santiago, Ferran Macià

Abstract: The interaction between surface acoustic waves and magnetization offers an efficient route for electrically controlling magnetic states. Here, we demonstrate the excitation of magnetoacoustic waves in galfenol, a highly magnetostrictive alloy made of iron (72%) and gallium (28%). We quantify the amplitude of the induced magnetization oscillations using magnetic imaging in an X-ray photoelectron mi… ▽ More The interaction between surface acoustic waves and magnetization offers an efficient route for electrically controlling magnetic states. Here, we demonstrate the excitation of magnetoacoustic waves in galfenol, a highly magnetostrictive alloy made of iron (72%) and gallium (28%). We quantify the amplitude of the induced magnetization oscillations using magnetic imaging in an X-ray photoelectron microscope and estimate the dynamic magnetoelastic constants through micromagnetic simulations. Our findings demonstrate the potential of galfenol for magnonic applications and reveal that, despite strong magnetoelastic coupling, magnetic interactions and spin-wave dispersion relations significantly influence the overall amplitude of magnetoacoustic waves. △ Less

Submitted 6 September, 2024; originally announced September 2024.

Comments: 6 pages, 4 figures

Spin-orbit torque switching in 2D ferromagnet / topological insulator heterostructure grown by molecular beam epitaxy

Authors: Thomas Guillet, Regina V. Galcera, Juan F. Sierra, Marius V. Costache, Matthieu Jamet, Frédéric Bonell, Sergio O. Valenzuela

Abstract: Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the T… ▽ More Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the TI and the FM is of utmost importance in determining the nature and efficiency of the SOT. To optimize the SOT magnitude and enable ultra-low-power magnetization switching, an atomically smooth interface is necessary. To this end, we have developed the growth of a full van der Waals FM/TI heterostructure by molecular beam epitaxy. The compensated TI (Bi0.4Sb0.6)2Te3 and ferromagnetic Fe3GeTe2 (FGT) were chosen because of their exceptional crystalline quality, low carrier concentration in BST and relatively large Curie temperature and perpendicular magnetic anisotropy in FGT. We characterized the magnitude of the SOTs by using thorough harmonic magnetotransport measurements and showed that the magnetization of an ultrathin FGT film could be switched with a current density Jc < 10^10 A/m^2. In comparison to previous studies utilizing traditional FMs, our findings are highly reliable, displaying little to no variation between devices. △ Less

Submitted 2 February, 2023; originally announced February 2023.

Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry

Authors: Lorenzo Camosi, Josef Svetlik, Marius V. Costache, Williams Savero Torres, Iván Fernández Aguirre, Vera Marinova, Dimitre Dimitrov, Marin Gospodinov, Juan F. Sierra, Sergio O. Valenzuela

Abstract: The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate… ▽ More The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge-to-spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic field orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Journal ref: 2D Materials 9, 035014 (2022)

Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure

Authors: Alois Arrighi, Elena del Corro, Daniel Navarro Urrios, Marius V. Costache, Juan F. Sierra, Kenji Watanabe, Takashi Taniguchi, J. A. Garrido, Sergio O. Valenzuela, Clivia M. Sotomayor Torres, Marianna Sledzinska

Abstract: State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS… ▽ More State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS2 layers with thicknesses of 5 and 14 exhibit thermal conductivity in the range between 12 and 24 Wm-1K-1. Additionally, after determining the thermal conductivity of a selected MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a third of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than 10 times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G 70 MWm-2K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2 based devices holds the promise for efficient thermal management. △ Less

Submitted 14 July, 2021; originally announced July 2021.

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Control of spin-orbit torques by interface engineering in topological insulator heterostructures

Authors: Frédéric Bonell, Minori Goto, Guillaume Sauthier, Juan F. Sierra, Adriana I. Figueroa, Marius V. Costache, Shinji Miwa, Yoshishige Suzuki, Sergio O. Valenzuela

Abstract: (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at… ▽ More (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface chemical analysis and spin-transfer ferromagnetic resonance (ST-FMR) measurements, we demonstrate that intermixing plays a critical role in the generation of SOTs. By inserting a suitable normal metal spacer, material intermixing is reduced and the TI properties at the interface are largely improved, resulting in strong variations in the nature of the SOTs. A dramatic enhancement of a field-like torque, opposing and surpassing the Oersted-field torque, is observed, which can be attributed to the non-equilibrium spin density in Rashba-split surface bands and to the suppression of spin memory loss. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nanoletters, ©American Chemical Society after peer review

Journal ref: Nano Lett. 2020, 20, 8, 5893-5899

Ferromagnetic resonance assisted optomechanical magnetometer

Authors: M. F. Colombano, G. Arregui, F. Bonell, N. E. Capuj, E. Chavez-Angel, A. Pitanti, S. O. Valenzuela, C. M. Sotomayor-Torres, D. Navarro-Urrios, M. V. Costache

Abstract: The resonant enhancement of mechanical and optical interaction in optomechanical cavities enables their use as extremely sensitive displacement and force detectors. In this work we demonstrate a hybrid magnetometer that exploits the coupling between the resonant excitation of spin waves in a ferromagnetic insulator and the resonant excitation of the breathing mechanical modes of a glass microspher… ▽ More The resonant enhancement of mechanical and optical interaction in optomechanical cavities enables their use as extremely sensitive displacement and force detectors. In this work we demonstrate a hybrid magnetometer that exploits the coupling between the resonant excitation of spin waves in a ferromagnetic insulator and the resonant excitation of the breathing mechanical modes of a glass microsphere deposited on top. The interaction is mediated by magnetostriction in the ferromagnetic material and the consequent mechanical driving of the microsphere. The magnetometer response thus relies on the spectral overlap between the ferromagnetic resonance and the mechanical modes of the sphere, leading to a peak sensitivity better than 900 pT Hz$^{-1/2}$ at 206 MHz when the overlap is maximized. By externally tuning the ferromagnetic resonance frequency with a static magnetic field we demonstrate sensitivity values at resonance around a few nT Hz$^{-1/2}$ up to the GHz range. Our results show that our hybrid system can be used to build high-speed sensor of oscillating magnetic fields. △ Less

Submitted 3 September, 2020; v1 submitted 9 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. Lett. 125, 147201 (2020)

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Authors: L. Antonio Benítez, Williams Savero Torres, Juan F. Sierra, Matias Timmermans, Jose H. Garcia, Stephan Roche, Marius V. Costache, Sergio O. Valenzuela

Abstract: Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demon… ▽ More Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through the spin torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of the interconvertion at room-temperature remains elusive. Here, we unequivocally demonstrate strongly enhanced room-temperature spin-to-charge (StC) conversion in graphene driven by the proximity of a semiconducting transition metal dichalcogenide(WS2). By performing spin precession experiments in properly designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion effiencies can be tailored by electrostatic gating in magnitude and sign, peaking nearby the charge neutrality point with a magnitude that is comparable to the largest efficiencies reported to date. Such an unprecedented electric-field tunability provides a new building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Comments: 13 pages, 4 figures

Spin communication over 30 $μ$m long channels of chemical vapor deposited graphene on SiO$_2$

Authors: Z. M. Gebeyehu, S. Parui, J. F. Sierra, M. Timmermans, M. J. Esplandiu, S. Brems, C. Huyghebaert, K. Garello, M. V. Costache, S. O. Valenzuela

Abstract: We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pr… ▽ More We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $μ$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized single-layer graphene on SiO$_2$/Si substrates. The spin-lifetime systematically presents a marked minimum at the charge neutrality point, as typically observed in pristine exfoliated graphene. However, by studying the carrier density dependence beyond n ~ 5 x 10$^{12}$ cm$^{-2}$, via electrostatic gating, it is found that the spin lifetime reaches a maximum and then starts decreasing, a behavior that is reminiscent of that predicted when the spin-relaxation is driven by spin-orbit interaction. The spin lifetimes and relaxation lengths compare well with state-of-the-art results using exfoliated graphene on SiO$_2$/Si, being a factor two-to-three larger than the best values reported at room temperature using the same substrate. As a result, the spin signal can be readily measured across 30 $μ$m long graphene channels. These observations indicate that Pt-CVD graphene is a promising material for large-scale spin-based logic-in-memory applications. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Journal ref: 2D Materials, 6, 034003 (2019)

Bottom up synthesis of multifunctional nanoporous graphene

Authors: César Moreno, Manuel Vilas-Varela, Bernhard Kretz, Aran Garcia-Lekue, Marius V. Costache, Marcos Paradinas, Mirco Panighel, Gustavo Ceballos, Sergio O. Valenzuela, Diego Peña, Aitor Mugarza

Abstract: Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. Here we report a bottom-up method to synthesize nanoporous graphe… ▽ More Nanosize pores can turn semimetallic graphene into a semiconductor and from being impermeable into the most efficient molecular sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. Here we report a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores separated by ribbons, which can be tuned down to the one nanometer range. The size, density, morphology and chemical composition of the pores are defined with atomic precision by the design of the molecular precursors. Our measurements further reveal a highly anisotropic electronic structure, where orthogonal one-dimensional electronic bands with an energy gap of ~1 eV coexist with confined pore states, making the nanoporous graphene a highly versatile semiconductor for simultaneous sieving and electrical sensing of molecular species. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Science 360, 199, 2018

Determination of the spin-lifetime anisotropy in graphene using oblique spin precession

Authors: Bart Raes, Jeroen E. Scheerder, Marius V. Costache, Frédéric Bonell, Juan F. Sierra, Jo Cuppens, Joris Van de Vondel, Sergio O. Valenzuela

Abstract: We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, t… ▽ More We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low- and high-carrier densities. We first determine the in-plane spin lifetime by conventional spin precession measurements with magnetic fields perpendicular to the graphene plane. Then, to evaluate the out-of-plane spin lifetime, we implement spin precession measurements under oblique magnetic fields that generate an out-of-plane spin population. We find that the spin-lifetime anisotropy of graphene on silicon oxide is independent of carrier density and temperature down to 150 K, and much weaker than previously reported. Indeed, within the experimental uncertainty, the spin relaxation is isotropic. Altogether with the gate dependence of the spin lifetime, this indicates that the spin relaxation is driven by magnetic impurities or random spin-orbit or gauge fields. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: Final version published in Nature Communications under a Creative Commons Attribution 4.0 International License

Journal ref: Nature Communications, 7, 11444 (2016)

Spin precession in anisotropic media

Authors: B. Raes, A. W. Cummings, F. Bonell, M. V. Costache, J. F. Sierra, S. Roche, S. O. Valenzuela

Abstract: We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the… ▽ More We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on the spin orientation.We demonstrate that the spin precession (Hanle) line shape is strongly dependent on the degree of anisotropy and on the orientation of the magnetic field. In particular, we show that the anisotropy of the spin lifetime can be extracted from the measured spin signal, after dephasing in an oblique magnetic field, by using an analytical formula with a single fitting parameter. Alternatively, after identifying the fingerprints associated with the anisotropy, we propose a simple scaling of the Hanle line shapes at specific magnetic field orientations that results in a universal curve only in the isotropic case. The deviation from the universal curve can be used as a complementary means of quantifying the anisotropy by direct comparison with the solution of our generalized model. Finally, we applied our model to graphene devices and find that the spin relaxation for graphene on silicon oxide is isotropic within our experimental resolution. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Physical Review B, 95, 085403 (2017)

Thermoelectric spin voltage in graphene

Authors: Juan F. Sierra, Ingmar Neumann, Jo Cuppens, Bart Raes, Marius V. Costache, Sergio O. Valenzuela

Abstract: In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magn… ▽ More In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport, energy-dependent carrier mobility and unique density of states. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Journal ref: Nature Nanotechnology, 13, 107 (2018)

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Authors: Luis. A. Benítez, Juan. F. Sierra, Williams Savero Torres, Aloïs Arrighi, Frédéric Bonell, Marius. V. Costache, Sergio. O. Valenzuela

Abstract: Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfa… ▽ More Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials. △ Less

Submitted 25 April, 2018; v1 submitted 31 October, 2017; originally announced October 2017.

Journal ref: Nature Physics, 14, 303 (2018)

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Authors: W. Savero Torres, J. F. Sierra, L. A. Benítez, F. Bonell, M. V. Costache, S. O. Valenzuela

Abstract: Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancemen… ▽ More Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large resistivity of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: 14 pages, 6 figures. Accepted in 2D Materials. https://doi.org/10.1088/2053-1583/aa8823

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Authors: I. Neumann, M. V. Costache, G. Bridoux, J. F. Sierra, S. O. Valenzuela

Abstract: We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited di… ▽ More We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Journal ref: Appl. Phys. Lett. 103, 112401 (2013)

Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene

Authors: J. F. Sierra, I. Neumann, M. V. Costache, S. O. Valenzuela

Abstract: We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonloca… ▽ More We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage VNL across the remaining (detector) leads. Due to the nonlocal character of the measurement, VNL is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and VNL, VNL ~ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying VNL as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Journal ref: Nano Letters, pp 4000-4005, 15 (2015)

Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling

Authors: M. V. Costache, I. Neumann, J. F. Sierra, V. Marinova, M. M. Gospodinov, S. Roche, S. O. Valenzuela

Abstract: We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of t… ▽ More We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. A linear increase of the current with voltage is obtained up to a threshold value at which current saturation takes place. We show that the activated behavior, the voltage threshold and the saturation current can all be quantitatively explained by considering a single optical phonon mode with energy $\hbar Ω\approx 8$ meV. This phonon mode strongly interacts with the surface states of the material and represents the dominant source of scattering at the surface at high electric fields. △ Less

Submitted 8 April, 2014; originally announced April 2014.

Comments: Supplementary Material at: http://journals.aps.org/prl/supplemental/10.1103/PhysRevLett.112.086601/TIPhonon_SM.pdf

Journal ref: Phys. Rev. Lett. 112, 086601 (2014)

Magnon-drag thermopile

Authors: Marius V. Costache, German Bridoux, Ingmar Neumann, Sergio O. Valenzuela

Abstract: Thermoelectric effects in spintronics are gathering increasing attention as a means of managing heat in nanoscale structures and of controlling spin information by using heat flow. Thermal magnons (spin-wave quanta) are expected to play a major role, however, little is known about the underlying physical mechanisms involved. The reason is the lack of information about magnon interactions and of re… ▽ More Thermoelectric effects in spintronics are gathering increasing attention as a means of managing heat in nanoscale structures and of controlling spin information by using heat flow. Thermal magnons (spin-wave quanta) are expected to play a major role, however, little is known about the underlying physical mechanisms involved. The reason is the lack of information about magnon interactions and of reliable methods to obtain it, in particular for electrical conductors because of the intricate influence of electrons. Here, we demonstrate a conceptually new device that allows us to gather information on magnon-electron scattering and magnon-drag effects. The device resembles a thermopile formed by a large number of pairs of ferromagnetic wires placed between a hot and a cold source and connected thermally in parallel and electrically in series. By controlling the relative orientation of the magnetization in pairs of wires, the magnon-drag can be studied independently of the electron and phonon-drag thermoelectric effects. Measurements as a function of temperature reveal the effect on magnon drag following a variation of magnon and phonon populations. This information is crucial to understand the physics of electron-magnon interactions, magnon dynamics and thermal spin transport. △ Less

Submitted 26 March, 2012; originally announced March 2012.

Comments: 11 pages, 4 figures. Supplementary information available at http://www.nature.com/nmat/journal/v11/n3/full/nmat3201.html

Journal ref: Nature Materials 11, 199 (2012)

Experimental Spin Ratchet

Authors: Marius V. Costache, Sergio O. Valenzuela

Abstract: Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel barri… ▽ More Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport. Our device is based on the ground state energetics of a single electron transistor comprising a superconducting island connected to normal leads via tunnel barriers with different resistances that break spatial symmetry. We demonstrate spin transport and quantify the spin ratchet efficiency using ferromagnetic leads with known spin polarization. Our results are modeled theoretically and provide a robust route to the generation and manipulation of pure spin currents. △ Less

Submitted 1 March, 2011; originally announced March 2011.

Comments: 24 pages, 7 figures (includes supplementary material)

Journal ref: Science 330, 1645 (2010)

All Magnesium diboride Josephson Junctions with MgO and native oxide barriers

Authors: M. V. Costache, J. S. Moodera

Abstract: We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K a… ▽ More We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K agrees with the [Ambegaokar and Baratoff, Phys. Rev. Lett. 10, 486 (1963)] expression. For the junctions with native-oxide, conductance at low bias exhibits subgap features while at high bias reveals thick barriers. As a result no supercurrent was observed in the latter, despite the presence of superconducting-gaps to over 30 K. △ Less

Submitted 16 March, 2010; originally announced March 2010.

Comments: 8 pages with 3 figures

Journal ref: Applied Physics Letters 96, 082508 (2010)

Electrical detection of spin pumping: dc voltage generated by ferromagnetic resonance at ferromagnet/nonmagnet contact

Authors: M. V. Costache, S. M. Watts, C. H. van der Wal, B. J. van Wees

Abstract: We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the… ▽ More We describe electrical detection of spin pumping in metallic nanostructures. In the spin pumping effect, a precessing ferromagnet attached to a normal-metal acts as a pump of spin-polarized current, giving rise to a spin accumulation. The resulting spin accumulation induces a backflow of spin current into the ferromagnet and generates a dc voltage due to the spin dependent conductivities of the ferromagnet. The magnitude of such voltage is proportional to the spin-relaxation properties of the normal-metal. By using platinum as a contact material we observe, in agreement with theory, that the voltage is significantly reduced as compared to the case when aluminum was used. Furtheremore, the effects of rectification between the circulating rf currents and the magnetization precession of the ferromagnet are examined. Most significantly, we show that using an improved layout device geometry these effects can be minimized. △ Less

Submitted 23 September, 2008; originally announced September 2008.

Comments: 9 pages, 11 figures

Journal ref: Phys. Rev. B 78, 064423 (2008)

Large cone angle magnetization precession of an individual nanomagnet with dc electrical detection

Authors: M. V. Costache, S. M. Watts, M. Sladkov, C. H. van der Wal, B. J. van Wees

Abstract: We demonstrate on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale permalloy element. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic field. We used a microwave frequency modulation method to accurately measure resonant changes of the dc anisot… ▽ More We demonstrate on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale permalloy element. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic field. We used a microwave frequency modulation method to accurately measure resonant changes of the dc anisotropic magnetoresistance. Precession cone angles up to $9^{0}$ are determined with better than one degree of resolution. The resonance peak shape is well-described by the Landau-Lifshitz-Gilbert equation. △ Less

Submitted 8 September, 2006; originally announced September 2006.

Electrical detection of spin pumping due to the precessing magnetization of a single ferromagnet

Authors: M. V. Costache, M. Sladkov, S. M. Watts, C. H. van der Wal, B. J. van Wees

Abstract: We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromag… ▽ More We report direct electrical detection of spin pumping, using a lateral normal metal/ferromagnet/normal metal device, where a single ferromagnet in ferromagnetic resonance pumps spin polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a d.c. voltage due to the spin dependent conductivities of the ferromagnet. By comparing different contact materials (Al and /or Pt), we find, in agreement with theory, that the spin related properties of the normal metal dictate the magnitude of the d.c. voltage. △ Less

Submitted 5 September, 2006; originally announced September 2006.

On-chip detection of ferromagnetic resonance of a single submicron permalloy strip

Authors: M. V. Costache, M. Sladkov, C. H. van der Wal, B. J. van Wees

Abstract: We measured ferromagnetic resonance of a single submicron ferromagnetic strip, embedded in an on-chip microwave transmission line device. The method used is based on detection of the oscillating magnetic flux due to the magnetization dynamics, with an inductive pick-up loop. The dependence of the resonance frequency on applied static magnetic field agrees very well with the Kittel formula, demon… ▽ More We measured ferromagnetic resonance of a single submicron ferromagnetic strip, embedded in an on-chip microwave transmission line device. The method used is based on detection of the oscillating magnetic flux due to the magnetization dynamics, with an inductive pick-up loop. The dependence of the resonance frequency on applied static magnetic field agrees very well with the Kittel formula, demonstrating that the uniform magnetization precession mode is being driven. △ Less

Submitted 3 July, 2006; originally announced July 2006.

Spin accumulation probed in multiterminal lateral all-metallic devices

Authors: M. V. Costache, M. Zaffalon, B. J. van Wees

Abstract: We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel barriers. Although the four electrodes are designed as two electrode pairs of the same shape, they nonetheless all exhibit distinct switching fields. As a result the… ▽ More We study spin accumulation in an aluminium island, in which the injection of a spin current and the detection of the spin accumulation are done by means of four cobalt electrodes that connect to the island through transparent tunnel barriers. Although the four electrodes are designed as two electrode pairs of the same shape, they nonetheless all exhibit distinct switching fields. As a result the device can have several different magnetic configurations. From the measurements of the amplitude of the spin accumulation, we can identify these configurations, and using the diffusion equation for the spin imbalance, we extract the spin relaxation length $λ_\mathrm{sf} = 400 \pm 50$~nm and an interface spin current polarization $P = (10 \pm 1)%$ at low temperature and $λ_\mathrm{sf} = 350 \pm 50$~nm, $P = (8 \pm 1)%$ at room temperature. △ Less

Submitted 30 June, 2006; originally announced June 2006.

Microwave spectroscopy on magnetization reversal dynamics of nanomagnets with electronic detection

Authors: J. Grollier, M. V. Costache, C. H. van der Wal, B. J. van Wees

Abstract: We demonstrate a detection method for microwave spectroscopy on magnetization reversal dynamics of nanomagnets. Measurement of the nanomagnet anisotropic magnetoresistance was used for probing how magnetization reversal is resonantly enhanced by microwave magnetic fields. We used Co strips of 2 um x 130 nm x 40 nm, and microwave fields were applied via an on-chip coplanar wave guide. The method… ▽ More We demonstrate a detection method for microwave spectroscopy on magnetization reversal dynamics of nanomagnets. Measurement of the nanomagnet anisotropic magnetoresistance was used for probing how magnetization reversal is resonantly enhanced by microwave magnetic fields. We used Co strips of 2 um x 130 nm x 40 nm, and microwave fields were applied via an on-chip coplanar wave guide. The method was applied for demonstrating single domain-wall resonance, and studying the role of resonant domain-wall dynamics in magnetization reversal. △ Less

Submitted 5 July, 2006; v1 submitted 8 February, 2005; originally announced February 2005.

Electrical detection of spin accumulation and spin precession at room temperature in metallic spin valves

Authors: F. J. Jedema, M. V. Costache, H. B. Heersche, J. J. A. Baselmans, B. J. van Wees

Abstract: We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The observed modulation of the output signal due to the spin precession is discussed and explained in terms of a time of flight experiment of electrons in a diffusiv… ▽ More We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The observed modulation of the output signal due to the spin precession is discussed and explained in terms of a time of flight experiment of electrons in a diffusive conductor. The obtained spin relaxation length lambda_{sf}=500 nm in an Al strip will make possible detailed studies of spin dependent transport phenomena and allow to explore the possibilities of the electron spin for new electronic applications at RT. △ Less

Submitted 29 July, 2002; originally announced July 2002.

Comments: 3 pages, 3 figures, revtex, submitted to APL