Showing 1–17 of 17 results for author: Cosset-Chéneau, M

Non-Reciprocal Transport of Thermally-Generated Magnons

Authors: M. Cosset-Chéneau, S. H. Tirion, X. Y. Wei, J. Ben Youssef, B. J. van Wees

Abstract: We demonstrate the non-reciprocity of electrically and thermally-generated incoherent magnon transport using the magnetization direction of a Py wire placed on top of an ultrathin YIG film. We show that the transport properties of thermally-generated magnons under a Py wire depends on the relative orientation between the temperature gradient and the Py-magnetization direction. The symmetries of th… ▽ More We demonstrate the non-reciprocity of electrically and thermally-generated incoherent magnon transport using the magnetization direction of a Py wire placed on top of an ultrathin YIG film. We show that the transport properties of thermally-generated magnons under a Py wire depends on the relative orientation between the temperature gradient and the Py-magnetization direction. The symmetries of this non-reciprocal magnon transport match with those predicted by the remote dipolar interaction between YIG and Py magnons, controlled by the chirality of the YIG magnon dipolar stray fields. We also show that the directional magnon generation by the spin Seebeck effect from the Py wire displays the symmetries expected from the chiral spin Seebeck effect. △ Less

Submitted 28 August, 2024; originally announced August 2024.

Efficient Magnon Injection and Detection via the Orbital Rashba Edelstein Effect

Authors: J. A. Mendoza-Rodarte, M. Cosset-Chéneau, B. J. van Wees, M. H. D. Guimarães

Abstract: Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations i… ▽ More Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuOx electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba Edelstein effect efficiencies. △ Less

Submitted 2 January, 2024; originally announced January 2024.

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Authors: Boxuan Yang, Bibek Bhujel, Daniel G. Chica, Evan J. Telford, Xavier Roy, Maxen Cosset-Chéneau, Bart J. van Wees

Abstract: The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show… ▽ More The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 to 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from -50 % to +69 % in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering

Authors: S. Teresi, N. Sebe, T. Frottier, J. Patterson, A. Kandazoglou, P. Noël, P. Sgarro, D. Térébénec, N. Bernier, F. Hippert, J. -P. Attané, L. Vila, P. Noé, M. Cosset-Chéneau

Abstract: Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniq… ▽ More Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process. △ Less

Submitted 23 June, 2023; v1 submitted 18 April, 2023; originally announced April 2023.

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Authors: Cécile Grezes, Aurélie Kandazoglou, Maxen Cosset-Cheneau, Luis Arche, Paul Noël, Paolo Sgarro, Stephane Auffret, Kevin Garello, Manuel Bibes, Laurent Vila, Jean-Philippe Attané

Abstract: Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs usi… ▽ More Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet

Authors: M. Cosset-Chéneau, M. Husien Fahmy, A. Kandazoglou, C. Grezes, A. Brenac, S. Teresi, P. Sgarro, P. Warin, A. Marty, V. T. Pham, J. -P. Attané, L. Vila

Abstract: The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their fe… ▽ More The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials. △ Less

Submitted 23 June, 2023; v1 submitted 31 May, 2022; originally announced May 2022.

Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control

Authors: Yu Fu, Jing Li, Jules Papin, Paul Noel, Salvatore Teresi, Maxen Cosset-Cheneau, Cecile Grezes, Thomas Guillet, Candice Thomas, Yann-Michel Niquet, Philippe Ballet, Tristan Meunier, Jean-Philippe Attane, Albert Fert, Laurent Vila

Abstract: Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, w… ▽ More Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics. △ Less

Submitted 14 February, 2023; v1 submitted 30 November, 2021; originally announced November 2021.

Comments: 6 pages 3 figures

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

Authors: Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o… ▽ More SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Materials 5, 064005 (2021)

Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopy

Authors: T. H. Dang, J. Hawecker, E. Rongione, G. Baez Flores, D. Q. To, J. C. Rojas-Sanchez, H. Nong, J. Mangeney, J. Tignon, F. Godel, S. Collin, P. Seneor, M. Bibes, A. Fert, M. Anane, J. -M. George, L. Vila, M. Cosset-Cheneau, D. Dolfi, R. Lebrun, P. Bortolotti, K. Belashchenko, S. Dhillon, H. Jaffrès

Abstract: Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inv… ▽ More Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular the intrinsic inverse spin Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques -- ultrafast THz time domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state -- to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces and spin-flip rates. These measurements show the correspondence between the THz time domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab-initio calculations, simulations and analysis of the spin-diffusion and spin relaxation of carriers within the multilayers in the time domain, permitting to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion. △ Less

Submitted 12 December, 2020; originally announced December 2020.

Comments: 20 pages

Journal ref: Applied Physics Reviews 7, 041409 (2020)

Evidence of interfacial asymmetric spin scattering at ferromagnet-Pt interfaces

Authors: Van Tuong Pham, Maxen Cosset-Cheneau, Ariel Brenac, Olivier Boulle, Alain Marty, Jean-Philippe Attané, Laurent Vila

Abstract: We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show tha… ▽ More We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show that it is quite large and cannot be neglected. We then evidence that the spin injection/detection at the FM/Pt interfaces are dominated by the spin polarization of the interfaces. We show that interfacial asymmetric spin scattering becomes the driving mechanism of the spin injection in our samples. △ Less

Submitted 9 April, 2021; v1 submitted 24 November, 2020; originally announced November 2020.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 103, 201403 (2021)

Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves

Authors: Maxen Cosset-Chéneau, Laurent Vila, Gilles Zahnd, Daria Gusakova, Van Tuong Pham, Cécile Grèzes, Xavier Waintal, Alain Marty, Henri Jaffrès, Jean-Philippe Attané

Abstract: The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamenta… ▽ More The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamental parameter of the spin-dependent transport. We show that the obtained valuescannot be understood within a model considering only the Larmor, transverse decoherence and spindiffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by theSharvin conductance. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 027201 (2021)

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Authors: Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, Manuel Bibes

Abstract: Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern… ▽ More Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on April 16, 2020 as Phys. Rev. Materials 4, 041002(R) (2020)

Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films

Authors: Sara Varotto, Maxen Cosset-Cheneau, Cécile Grezes, Yu Fu, Patrick Warin, Ariel Brenac, Jean-François Jacquot, Serge Gambarelli, Christian Rinaldi, Vincent Baltz, Jean-Philippe Attané, Laurent Vila, Paul Noël

Abstract: Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it… ▽ More Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pumping experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase. △ Less

Submitted 16 May, 2020; originally announced May 2020.

Comments: 3 figures

Journal ref: Phys. Rev. Lett. 125, 267204 (2020)

Negligible thermal contributions to the spin pumping signal in ferromagnetic metal-Platinum bilayers

Authors: Paul Noël, Maxen Cosset-Cheneau, Victor Haspot, Vincent Maurel, Christian Lombard, Manuel Bibes, Agnès Barthelemy, Laurent Vila, Jean-Philippe Attané

Abstract: Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. He… ▽ More Spin pumping by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pumping. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pumping signals, by combining bolometry and spin pumping by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on Pt\Permalloy and La0.7Sr0.3MnO3\Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance △ Less

Submitted 13 April, 2020; v1 submitted 2 May, 2019; originally announced May 2019.

Comments: 5 figures

Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling

Authors: P. Laczkowski, M. Cosset-Cheneau, W. Savero-Torres, V. T. Pham, H. Jaffrès, N. Reyren, J. -C. Rojas-Sànchez, A. Marty, L. Vila, J. -M. George, J. -P. Attané

Abstract: We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au base… ▽ More We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport. △ Less

Submitted 18 March, 2019; v1 submitted 6 March, 2019; originally announced March 2019.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 99, 134436 (2019)

Spin diffusion length and polarization of ferromagnetic metals measured by spin-absorption technique in lateral spin valves

Authors: G. Zahnd, Laurent Vila, V. Pham, M Cosset-Cheneau, W Lim, A Brenac, P Laczkowski, A Marty, J Attané

Abstract: We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measure… ▽ More We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measurements allows thus determining the polarization and the spin diffusion length of a studied material independently, contrarily to most experiments based on lateral spin valves where those values are entangled. We report the spin transport parameters of some of the most important materials used in spinorbitronics (Co60Fe40, Ni81Fe19, Co, Pt, and Ta), at room and low (10 K) temperatures. △ Less

Submitted 31 October, 2018; originally announced October 2018.

Comments: Physical Review B, In press