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Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
Authors:
D. Babich,
J. Tranchant,
C. Adda,
B. Corraze,
M. -P. Besland,
P. Warnicke,
D. Bedau,
P. Bertoncini,
J. -Y. Mevellec,
B. Humbert,
J. Rupp,
T. Hennen,
D. Wouters,
R. Llopis,
L. Cario,
E. Janod
Abstract:
Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still…
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Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved μ-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.
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Submitted 20 October, 2021; v1 submitted 11 May, 2021;
originally announced May 2021.
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Unexplored reactivity of (Sn)2- Oligomers with transition metals in low-temperature solid-state reactions
Authors:
Shunsuke Sasaki,
Melanie Lesault,
Elodie Grange,
Etienne Janod,
Benoît Corraze,
Sylvian Cadars,
Maria Teresa Caldes,
Catherine Guillot-Deudon,
Stéphane Jobic,
Laurent Cario
Abstract:
Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions…
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Chalcogenides (Q = S, Se, Te), one of the most important family of materials in solid-state chemistry, differ from oxides by their ability to form covalently-bonded (Qn)2- oligomers. Each chalcogen atom within such entity fulfills the octet rule by sharing electrons with other chalcogen atoms but some antibonding levels are vacant. This makes these oligomers particularly suited for redox reactions in solid state, namely towards elemental metals with a low redox potential that may be oxidized. We recently used this strategy to design, at low temperature and in an orientated manner, materials with 2D infinite layers through the topochemical insertion of copper into preformed precursors containing (S2)2- and/or (Se2)2- dimers (i.e. La2O2S2, Ba2F2S2 and LaSe2). Herein we extend the validity of the concept to the redox activity of (S2)2- and (S3)2- oligomers towards 3d transition metal elements (Cu, Ni, Fe) and highlight the strong relationship between the structures of the precursors, BaS2 and BaS3, and the products, BaCu2S2, BaCu4S3, BaNiS2 and BaFe2S3. Clearly, beyond the natural interest for the chemical reactivity of oligomers to generate compounds, this soft chemistry route may conduct to the rational conception of materials with a predicted crystal structure.
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Submitted 7 January, 2019;
originally announced January 2019.
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Relaxation of a Mott-neuron
Authors:
Federico Tesler,
Coline Adda,
Julien Tranchant,
Benoit Corraze,
Etienne Janod,
Laurent Cario,
Pablo Stoliar,
Marcelo Rozenberg
Abstract:
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic en…
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We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing the induced metastable phase may become further stabilized by the electro-elastic effect. We present a systematic study of the model by numerical simulations and compare the results to new experiments in Mott insulators of the AM4Q8 family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott-neuron [P. Stoliar Adv Mat 2017] to bring new insight on the physical mechanism of its relaxation. This is a key feature for future neuromorphic circuit implementations.
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Submitted 14 November, 2017;
originally announced November 2017.
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Watching the birth of a charge density wave order: diffraction study on nanometer-and picosecond-scales
Authors:
C. Laulhé,
T. Huber,
G. Lantz,
A. Ferrer,
S. O. Mariager,
S. Grübel,
J. Rittmann,
J. A. Johnson,
V. Esposito,
A. Lübcke,
L. Huber,
M. Kubli,
M. Savoini,
V. L. R. Jacques,
L. Cario,
B. Corraze,
E. Janod,
G. Ingold,
P. Beaud,
S. L. Johnson,
S. Ravy
Abstract:
Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth proce…
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Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth process which ends 100 ps after laser excitation. We demonstrate that the newly formed I-CDW phase is fragmented into several nanometric domains that are growing through a coarsening process. The coarsening dynamics is found to follow the universal Lifshitz-Allen-Cahn growth law, which describes the ordering kinetics in systems exhibiting a non-conservative order parameter.
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Submitted 21 March, 2017;
originally announced March 2017.
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First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8
Authors:
A. Camjayi,
C. Acha,
R. Weht,
M. G. Rodríguez,
B. Corraze,
E. Janod,
L. Cario,
M. J. Rozenberg
Abstract:
The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of t…
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The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.
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Submitted 15 September, 2014;
originally announced September 2014.
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Non thermal and purely electronic resistive transition in narrow gap Mott insulators
Authors:
P. Stoliar,
M. Rozenberg,
E. Janod,
B. Corraze,
J. Tranchant,
L. Cario
Abstract:
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle…
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Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.
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Submitted 8 July, 2014;
originally announced July 2014.
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Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Authors:
Pablo Stoliar,
Laurent Cario,
Etienne Janod,
Benoit Corraze,
Catherine Guillot-Deudon,
Sabrina Salmon-Bourmand,
Vincent Guiot,
Julien Tranchant,
Marcelo Rozenberg
Abstract:
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with n…
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One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche.
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Submitted 20 September, 2013;
originally announced September 2013.
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Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Authors:
Laurent Cario,
Cristian Vaju,
Benoit Corraze,
Vincent Guiot,
Etienne Janod
Abstract:
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult . The con…
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The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon reach their miniaturization limits mostly because reliably keeping enough electrons in an always smaller cell size will become increasingly difficult . The control of electrical resistance at the nanometer scale therefore requires new concepts, and the ultimate resistance-change device is believed to exploit a purely electronic phase change such as the Mott insulator to insulator transition [2]. Here we show that application of short electric pulses allows to switch back and forth between an initial high-resistance insulating state ("0" state) and a low-resistance "metallic" state ("1" state) in the whole class of Mott Insulator compounds AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se). We found that electric fields as low as 2 kV/cm induce an electronic phase change in these compounds from a Mott insulating state to a metallic-like state. Our results suggest that this transition belongs to a new class of resistive switching and might be explained by recent theoretical works predicting that an insulator to metal transition can be achieved by a simple electric field in a Mott Insulator. This new type of resistive switching has potential to build up a new class of Resistive Random Access Memory (RRAM) with fast writing/erasing times (50 ns to 10 μs) and resistance ratios ΔR/R of the order of 25% at room temperature.
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Submitted 20 April, 2013;
originally announced April 2013.
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Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators
Authors:
Vincent Guiot,
Laurent Cario,
Etienne Janod,
Benoit Corraze,
Vinh Ta Phuoc,
Marcelo Rozenberg,
Pablo Stoliar,
Tristan Cren,
Dimitri Roditchev
Abstract:
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V char…
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Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample.
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Submitted 17 April, 2013;
originally announced April 2013.
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Ultrafast filling of an electronic pseudogap in an incommensurate crystal
Authors:
V. Brouet,
J. Mauchain,
E. Papalazarou,
J. Faure,
M. Marsi,
P. H. Lin,
A. Taleb-Ibrahimi,
P. Le Fevre,
F. Bertran,
L. Cario,
E. Janod,
B. Corraze,
V. Ta Phuoc,
L. Perfetti
Abstract:
We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K…
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We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.
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Submitted 29 January, 2013;
originally announced January 2013.
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Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$
Authors:
V. Ta Phuoc,
V. Brouet,
B. Corraze,
E. Janod,
L. Cario
Abstract:
Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectros…
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Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$.
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Submitted 29 October, 2012;
originally announced October 2012.
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Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$
Authors:
Vincent Dubost,
Tristan Cren,
François Debontridder,
Dimitri Roditchev,
Cristian Vaju,
Vincent Guiot,
Laurent Cario,
Benoît Corraze,
Etienne Janod
Abstract:
Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samp…
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Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.
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Submitted 29 April, 2013; v1 submitted 21 May, 2012;
originally announced May 2012.
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Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
Authors:
C. Vaju,
L. Cario,
B. Corraze,
E. Janod,
V. Dubost,
T. Cren,
D. Roditchev,
D. Braithwaite,
O. Chauvet
Abstract:
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these sys…
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Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.
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Submitted 10 September, 2009;
originally announced September 2009.
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Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides
Authors:
Vincent Dubost,
T. Cren,
C. Vaju,
Laurent Cario,
B. Corraze,
E. Janod,
François Debontridder,
D. Roditchev
Abstract:
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the…
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We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.
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Submitted 30 June, 2009;
originally announced June 2009.
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Magnetoelastic polarons in the hole-doped quasi-one dimensional model system Y2-xCaxBaNiO5
Authors:
Francois-Xavier Lannuzel,
Etienne Janod,
Christophe Payen,
Benoit Corraze,
Daniel Braithwaite,
Olivier Chauvet
Abstract:
Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy $E_{a}/k_{B} sim$ 1830 K at room temperature while $E_{a}$ decreases upon cooling. We suggest that $E_{a}$ measures the binding energy of the doped holes which f…
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Charge transport in the hole-doped quasi-1D model system Y$_{2-x}$Ca$_x$BaNiO$_5$ (x $ leq$ 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dependence is characterized by a constant activation energy $E_{a}/k_{B} sim$ 1830 K at room temperature while $E_{a}$ decreases upon cooling. We suggest that $E_{a}$ measures the binding energy of the doped holes which form magneto-acoustic polarons when polarizing the neighboring Ni spins. A semi-classical model is proposed which allows to relate the electrical measurements and the bulk magnetic susceptibility. This model gives a picture of the spin-charge-lattice relation in this inhomogeneously doped quasi-1D system and explains its unusual one-particle charge excitation spectrum close to the Fermi level.
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Submitted 4 November, 2004;
originally announced November 2004.
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Localization, Coulomb interactions and electrical heating in single-wall carbon nanotubes/polymer composites
Authors:
J. M. Benoit,
B. Corraze,
O. Chauvet
Abstract:
Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a localization length xi=10-30 nm. Coulomb interactions associated with a soft gap Delta_CG=2.5 meV are present at low temperature close to f_c. We argue that it…
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Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a localization length xi=10-30 nm. Coulomb interactions associated with a soft gap Delta_CG=2.5 meV are present at low temperature close to f_c. We argue that it originates from the Coulomb charging energy effect which is partly screened by adjacent bundles. The high field conductivity is described within an electrical heating scheme. All the results suggest that using composites close to the percolation threshold may be a way to access intrinsic properties of the nanotubes by experiments at a macroscopic scale.
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Submitted 24 April, 2002;
originally announced April 2002.
