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First measurement of Gallium Arsenide as a low-temperature calorimeter
Authors:
D. L. Helis,
A. Melchiorre,
A. Puiu,
G. Benato,
P. Carniti,
A. Continenza,
N. Di Marco,
A. Ferella,
C. Ferrari,
F. Giannesi,
C. Gotti,
E. Monticone,
L. Pagnanini,
G. Pessina,
S. Pirro,
G. Profeta,
M. Rajteri,
P. Settembri,
A. Shaikina,
C. Tresca,
D. Trotta
Abstract:
In this paper, we present the first measurement of a Gallium Arsenide crystal working as low-temperature calorimeter for direct Dark Matter (DM) searches within the DAREDEVIL (DARk-mattEr DEVIces for Low energy detection) project. In the quest for direct dark matter detection, innovative approaches to lower the detection thershold and explore the sub-GeV mass DM range, have gained high relevance i…
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In this paper, we present the first measurement of a Gallium Arsenide crystal working as low-temperature calorimeter for direct Dark Matter (DM) searches within the DAREDEVIL (DARk-mattEr DEVIces for Low energy detection) project. In the quest for direct dark matter detection, innovative approaches to lower the detection thershold and explore the sub-GeV mass DM range, have gained high relevance in the last decade. This study presents the pioneering use of Gallium Arsenide (GaAs) as a low-temperature calorimeter for probing the dark matter-electron interaction channel. Our experimental setup features a GaAs crystal at ultralow temperature of 15 mK, coupled with a Neutron Transmutation Doped (NTD) thermal sensor for precise energy estimation. This configuration is the first step towards the detection of single electrons scattered by dark matter particles within the GaAs crystal, to significantly improve the sensitivity to low-mass dark matter candidates.
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Submitted 24 April, 2024;
originally announced April 2024.
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2D hybrid CrCl2(N2C4H4)2 with tunable ferromagnetic half-metallicity
Authors:
Wentao Hu,
Ke Yang,
Alessandro Stroppa,
Alessandra Continenza,
Hua Wu
Abstract:
Two-dimensional ferromagnetic (2D FM) half-metal holds great potential for quantum magnetoelectronics and spintronic devices. Here, using density functional calculations and magnetic pictures, we study the electronic structure and magnetic properties of the novel van der Waals (vdW) metal-organic framework (MOF), CrCl2(N2C4H4)2, i.e. CrCl2(pyrazine)2. Our results show that CrCl2(pyrazine)2 is a 2D…
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Two-dimensional ferromagnetic (2D FM) half-metal holds great potential for quantum magnetoelectronics and spintronic devices. Here, using density functional calculations and magnetic pictures, we study the electronic structure and magnetic properties of the novel van der Waals (vdW) metal-organic framework (MOF), CrCl2(N2C4H4)2, i.e. CrCl2(pyrazine)2. Our results show that CrCl2(pyrazine)2 is a 2D FM half-metal, having a strong intralayer FM coupling but a much weak interlayer one due to the vdW spacing. Its spin-polarized conduction bands are formed by the pyrazine molecular orbitals and are polarized by the robust Cr3+ local spin = 3/2. These results agree with the recent experiments [Pedersen et al., Nature Chemistry, 2018, 10, 1056]. More interestingly, CrCl2(pyrazine)2 monolayer has a strong doping tunability of the FM half-metallicity, and the FM coupling would be significantly enhanced by electron doping. Our work highlights a vital role of the organic ligand and suggests that vdW MOF is also worth exploration for new 2D magnetic materials.
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Submitted 5 July, 2021;
originally announced July 2021.
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Ru-doping on iron based pnictides: the "unfolded" dominant role of structural effects for superconductivity
Authors:
M. Reticcioli,
G. Profeta,
C. Franchini,
A. Continenza
Abstract:
We present an ab-initio study of Ru substitution in two different compounds, BaFe2As2 and LaFeAsO, pure and F-doped. Despite the many similarities among them, Ru substitution has very different effects on these compounds. By means of an unfolding technique, which allows us to trace back the electronic states into the primitive cell of the pure compounds, we are able to disentangle the effects brou…
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We present an ab-initio study of Ru substitution in two different compounds, BaFe2As2 and LaFeAsO, pure and F-doped. Despite the many similarities among them, Ru substitution has very different effects on these compounds. By means of an unfolding technique, which allows us to trace back the electronic states into the primitive cell of the pure compounds, we are able to disentangle the effects brought by the local structural deformations and by the impurity potential to the states at the Fermi level. Our results are compared with available experiments and show: i) satisfying agreement of the calculated electronic properties with experiments, confirming the presence of a magnetic order on a short range scale; ii) Fermi surfaces strongly dependent on the internal structural parameters, more than on the impurity potential. These results enter a widely discussed field in the literature and provide a better understanding of the role of Ru in iron pnictides: although isovalent to Fe, the Ru-Fe substitution leads to changes in the band structure at the Fermi level mainly related to local structural modifications.
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Submitted 10 January, 2017;
originally announced January 2017.
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Electron and hole doping in the relativistic Mott insulator Sr$_2$IrO$_4$: a first-principles study using band unfolding technique
Authors:
Peitao Liu,
Michele Reticcioli,
Bongjae Kim,
Alessandra Continenza,
Georg Kresse,
D. D. Sarma,
Xing-Qiu Chen,
Cesare Franchini
Abstract:
We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effe…
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We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS), which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. In Sr$_{2-x}$La$_x$IrO$_4$ the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion $U-J$ from 1.6 eV ($x=0$) to 1.4 eV (metallic regime $x=12.5\%$). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at ($π$/2,$π$/2) and less intense features at $X$ in the FS. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.
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Submitted 30 September, 2016; v1 submitted 29 June, 2016;
originally announced June 2016.
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Common effect of chemical and external pressures on the magnetic properties of $R$CoPO ($R$ = La, Pr, Nd, Sm). II
Authors:
G. Prando,
G. Profeta,
A. Continenza,
R. Khasanov,
A. Pal,
V. P. S. Awana,
B. Büchner,
S. Sanna
Abstract:
The direct correspondence between Co band ferromagnetism and structural parameters is investigated in the pnictide oxides $R$CoPO for different rare-earth ions ($R$ = La, Pr, Nd, Sm) by means of muon-spin spectroscopy and {\it ab-initio} calculations, complementing our results published previously [G. Prando {\it et al.}, {\it Phys. Rev. B} {\bf 87}, 064401 (2013)]. Both the transition temperature…
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The direct correspondence between Co band ferromagnetism and structural parameters is investigated in the pnictide oxides $R$CoPO for different rare-earth ions ($R$ = La, Pr, Nd, Sm) by means of muon-spin spectroscopy and {\it ab-initio} calculations, complementing our results published previously [G. Prando {\it et al.}, {\it Phys. Rev. B} {\bf 87}, 064401 (2013)]. Both the transition temperature to the ferromagnetic phase $T_{_{\textrm{C}}}$ and the volume of the crystallographic unit cell $V$ are found to be conveniently tuned by the $R$ ionic radius and/or external pressure. A linear correlation between $T_{_{\textrm{C}}}$ and $V$ is reported and {\it ab-initio} calculations unambiguously demonstrate a full equivalence of chemical and external pressures. As such, $R$ ions are shown to be influencing the ferromagnetic phase only via the induced structural shrinkage without involving any active role from the electronic $f$ degrees of freedom, which are only giving a sizeable magnetic contribution at much lower temperatures.
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Submitted 20 June, 2015;
originally announced June 2015.
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Revisiting the Mn-doped Ge using the Heyd-Scuseria-Ernzerhof hybrid functional
Authors:
A. Stroppa,
G. Kresse,
A. Continenza
Abstract:
We perform a comparative \textit{ab-initio} study of Mn-doped Germanium semiconductor using the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, DFT+$U$ and Heyd-Scuseria-Ernzerhof hybrid functional (HSE). We show that the HSE functional is able to correctly account for the relevant ground state properties of the host matrix as well as of Mn-doped semiconductor. Although the DFT+$U$ a…
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We perform a comparative \textit{ab-initio} study of Mn-doped Germanium semiconductor using the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, DFT+$U$ and Heyd-Scuseria-Ernzerhof hybrid functional (HSE). We show that the HSE functional is able to correctly account for the relevant ground state properties of the host matrix as well as of Mn-doped semiconductor. Although the DFT+$U$ and the HSE description are very similar, some differences still remain. In particular, the half-metallicity is lost using DFT+$U$ when a suitable $U$ value, tuned to recover the photoemission spectra, is employed. For comparison, we also discuss the case of Mn in Silicon.
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Submitted 4 February, 2011; v1 submitted 10 January, 2011;
originally announced January 2011.
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Static and Dynamical Susceptibility of LaO1-xFxFeAs
Authors:
M. Monni,
F. Bernardini,
G. Profeta,
A. Sanna,
S. Sharma,
J. K. Dewhurst,
C. Bersier,
A. Continenza,
E. K. U. Gross,
S. Massidda
Abstract:
The mechanism of superconductivity and magnetism and their possible interplay have recently been under debate in pnictides. A likely pairing mechanism includes an important role of spin fluctuations and can be expressed in terms of the magnetic susceptibility chi. The latter is therefore a key quantity in the determination of both the magnetic properties of the system in the normal state, and of…
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The mechanism of superconductivity and magnetism and their possible interplay have recently been under debate in pnictides. A likely pairing mechanism includes an important role of spin fluctuations and can be expressed in terms of the magnetic susceptibility chi. The latter is therefore a key quantity in the determination of both the magnetic properties of the system in the normal state, and of the contribution of spin fluctuations to the pairing potential. A basic ingredient to obtain chi is the independent-electron susceptibility chi0. Using LaO1-xFxFeAs as a prototype material, in this report we present a detailed ab-initio study of chi0(q,omega), as a function of doping and of the internal atomic positions. The resulting static chi0(q,0) is consistent with both the observed M-point related magnetic stripe phase in the parent compound, and with the existence of incommensurate magnetic structures predicted by ab-initio calculations upon doping.
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Submitted 28 January, 2010;
originally announced January 2010.
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Multiband superconductivity in Pb, H under pressure and CaBeSi from {\it ab-initio} calculations
Authors:
C. Bersier,
A. Floris,
P. Cudazzo,
G. Profeta,
A. Sanna,
F. Bernardini,
M. Monni,
S. Pittalis,
S. Sharma,
H. Glawe,
A. Continenza,
S. Massidda,
E. K. U. Gross
Abstract:
Superconductivity in Pb, H under extreme pressure and CaBeSi, in the framework of the density functional theory for superconductors, is discussed. A detailed analysis on how the electron-phonon and electron-electron interactions combine together to determine the superconducting gap and critical temperature of these systems is presented. Pb, H under pressure and CaBeSi are multigap superconductor…
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Superconductivity in Pb, H under extreme pressure and CaBeSi, in the framework of the density functional theory for superconductors, is discussed. A detailed analysis on how the electron-phonon and electron-electron interactions combine together to determine the superconducting gap and critical temperature of these systems is presented. Pb, H under pressure and CaBeSi are multigap superconductors. We will address the question under which conditions does a system exhibits this phenomenon. The presented results contribute to the understanding of multiband and anisotropic superconductivity, which has received a lot of attention since the discovery of MgB$_2$, and show how it is possible to describe the superconducting properties of real materials on a fully {\it ab-initio} basis.
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Submitted 11 February, 2009;
originally announced February 2009.
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Role of Coulomb interaction in the superconducting properties of CaC6 and H under pressure
Authors:
S. Massidda,
F. Bernardini,
C. Bersier,
A. Continenza,
P. Cudazzo,
A. Floris,
H. Glawe,
M. Monni,
S. Pittalis,
G. Profeta,
A. Sanna,
S. Sharma,
E. K. U. Gross
Abstract:
Superconductivity in intercalated graphite CaC6 and H under extreme pressure, in the framework of superconducting density functional theory, is discussed. A detailed analysis on how the electron-phonon and electron-electron interactions combine together to determine the superconducting gap and critical temperature of these systems is presented. In particular, we discuss the effect on the calcula…
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Superconductivity in intercalated graphite CaC6 and H under extreme pressure, in the framework of superconducting density functional theory, is discussed. A detailed analysis on how the electron-phonon and electron-electron interactions combine together to determine the superconducting gap and critical temperature of these systems is presented. In particular, we discuss the effect on the calculated Tc of the anisotropy of the electron-phonon interaction and of the different approximations for screening the Coulomb repulsion. These results contribute to the understanding of multigap and anisotropic superconductivity, which has received a lot of attention since the discovery of MgB2, and show how it is possible to describe the superconducting properties of real materials on a fully ab-initio basis.
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Submitted 13 November, 2008;
originally announced November 2008.
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{Spin polarization tuning in Mn$_{x}$Fe$_{1-x}$Ge$_{3}$
Authors:
A. Stroppa,
G. Kresse,
A. Continenza
Abstract:
Experimentally, the intermetallic compound Mn$_{4}$FeGe$_{3}$ has been recently shown to exhibit enhanced magnetic properties and spin polarization compared to the Mn$_{5}$Ge$_{3}$ parent compound. The present {\em ab-initio} study focusses on the effect of Fe substitution on the electronic and magnetic properties of the compound. Our calculations reveal that the changes on the Fermi surface of…
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Experimentally, the intermetallic compound Mn$_{4}$FeGe$_{3}$ has been recently shown to exhibit enhanced magnetic properties and spin polarization compared to the Mn$_{5}$Ge$_{3}$ parent compound. The present {\em ab-initio} study focusses on the effect of Fe substitution on the electronic and magnetic properties of the compound. Our calculations reveal that the changes on the Fermi surface of the doped compound are remarkable and provide explanations for the enhanced spin-polarization observed. Finally, we show that it is indeed possible to tune the degree of spin-polarization upon Fe doping, thus making the Mn$_{1-x}$Fe$_{x}$Ge$_{3}$ intermetallic alloy very promising for future spintronic applications.
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Submitted 26 September, 2008;
originally announced September 2008.
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Electronic, dynamical and superconducting properties of CaBeSi
Authors:
C. Bersier,
A. Floris,
A. Sanna,
G. Profeta,
A. Continenza,
E. K. U. Gross,
S. Massidda
Abstract:
We report first-principles calculations on the normal and superconducting state of CaBe(x)Si(2-x) (x=1), in the framework of density functional theory for superconductors (SCDFT). CaBeSi is isostructural and isoelectronic to MgB2 and this makes possible a direct comparison of the electronic and vibrational properties and the electron-phonon interaction of the two materials. Despite the many simi…
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We report first-principles calculations on the normal and superconducting state of CaBe(x)Si(2-x) (x=1), in the framework of density functional theory for superconductors (SCDFT). CaBeSi is isostructural and isoelectronic to MgB2 and this makes possible a direct comparison of the electronic and vibrational properties and the electron-phonon interaction of the two materials. Despite the many similarities with MgB2 (e.g. sigma bands at the Fermi level and a larger Fermi surface nesting), according to our calculations CaBeSi has a very low critical temperature (Tc ~ 0.4 K, consistent with the experiment). CaBeSi exhibits a complex gap structure, with three gaps at Fermi level: besides the two sigma and pi gaps, present also in MgB2, the appearance of a third gap is related to the anisotropy of the Coulomb repulsion, acting in different way on the bonding and antibonding electronic pi states.
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Submitted 7 March, 2008;
originally announced March 2008.
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Magneto-optical properties of (Ga,Mn)As: an ab--initio determination
Authors:
A. Stroppa,
S. Picozzi,
A. Continenza,
M. Y. Kim,
A. J. Freeman
Abstract:
The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms…
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The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms of the band structure and density of states and the essential role of the dipole matrix elements is highlighted by means of Brillouin zone dissection. Using an explicit representation of the Kerr angle in terms of real and imaginary parts of the tensor components, a careful analysis of the Kerr spectra is also presented. The results of our study can be summarized as follows: i) different types of interband transitions do contribute in shaping the conductivity tensor; ii) the dipole matrix elements are important in obtaining the correct optical spectra; iii) different regions in the irreducible Brillouin zone contribute to the conductivity very differently; iv) a minimum in the Re $σ_{xx}$ spectra can give rise to a large Kerr rotation angle in the same energy region; and v) materials engineering via the magneto-optical Kerr effect is possible provided that the electronic structure of the material can be tuned in such a way as to \emph{enhance} the depth of the minima of Re $σ_{xx}$.
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Submitted 10 December, 2007;
originally announced December 2007.
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Optical and magneto-optical properties of ferromagnetic full-Heusler films: experiments and first-principles calculations
Authors:
F. Ricci,
S. Picozzi,
A. Continenza,
F. D'Orazio,
F. Lucari,
K. Westerholt,
M. Kim,
A. J. Freeman
Abstract:
We report a joint theoretical and experimental study focused on understanding the optical and magneto-optical properties of Co-based full-Heusler compounds. We show that magneto-optical spectra calculated within ab-initio density functional theory are able to uniquely identify the features of the experimental spectra in terms of spin resolved electronic transitions. As expected for 3d-based magn…
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We report a joint theoretical and experimental study focused on understanding the optical and magneto-optical properties of Co-based full-Heusler compounds. We show that magneto-optical spectra calculated within ab-initio density functional theory are able to uniquely identify the features of the experimental spectra in terms of spin resolved electronic transitions. As expected for 3d-based magnets, we find that the largest Kerr rotation for these alloys is of the order of 0.3o in polar geometry. In addition, we demonstrate that (i) multilayered structures have to be carefully handled in the theoretical calculations in order to improve the agreement with experiments, and (ii) combined theoretical and experimental investigations constitute a powerful approach to designing new materials for magneto-optical and spin-related applications
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Submitted 25 June, 2007;
originally announced June 2007.
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Magneto-optics in pure and defective Ga_{1-x}Mn_xAs from first-principles
Authors:
S. Picozzi,
A. Continenza,
M. Kim,
A. J. Freeman
Abstract:
The magneto-optical properties of Ga$_{1-x}$Mn$_{x}$As including their most common defects were investigated with precise first--principles density-functional FLAPW calculations in order to: {\em i}) elucidate the origin of the features in the Kerr spectra in terms of the underlying electronic structure; {\em ii}) perform an accurate comparison with experiments; and {\em iii}) understand the rol…
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The magneto-optical properties of Ga$_{1-x}$Mn$_{x}$As including their most common defects were investigated with precise first--principles density-functional FLAPW calculations in order to: {\em i}) elucidate the origin of the features in the Kerr spectra in terms of the underlying electronic structure; {\em ii}) perform an accurate comparison with experiments; and {\em iii}) understand the role of the Mn concentration and occupied sites in shaping the spectra. In the substitutional case, our results show that most of the features have an interband origin and are only slightly affected by Drude--like contributions, even at low photon energies. While not strongly affected by the Mn concentration for the intermediately diluted range ($x\sim$ 10%), the Kerr factor shows a marked minimum (up to 1.5$^o$) occurring at a photon energy of $\sim$ 0.5 eV. For interstitial Mn, the calculated results bear a striking resemblance to the experimental spectra, pointing to the comparison between simulated and experimental Kerr angles as a valid tool to distinguish different defects in the diluted magnetic semiconductors framework.
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Submitted 26 October, 2005;
originally announced October 2005.
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Superconductivity in lithium, potassium and aluminium under extreme pressure: A first-principles study
Authors:
G. Profeta,
C. Franchini,
N. N. Lathiotakis,
A. Floris,
A. Sanna,
M. A. L. Marques,
M. Lueders,
S. Massidda,
E. K. U. Gross,
A. Continenza
Abstract:
Extreme pressure strongly affects the superconducting properties of ``simple'' elemental metals, like Li, K and Al. Pressure induces superconductivity in Li (as high as 17 K), while suppressing it in Al. We report first-principles investigations of the superconducting properties of dense Li, K and Al based on a recently proposed, parameter-free, method. Our results show an unprecedented agreemen…
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Extreme pressure strongly affects the superconducting properties of ``simple'' elemental metals, like Li, K and Al. Pressure induces superconductivity in Li (as high as 17 K), while suppressing it in Al. We report first-principles investigations of the superconducting properties of dense Li, K and Al based on a recently proposed, parameter-free, method. Our results show an unprecedented agreement with experiments, assess the predictive power of the method over a wide range of densities and electron-phonon couplings, and provide predictions for K, where no experiments exist so far. More importantly, our results help uncovering the physics of the different behaviors of Li and Al in terms of phonon softening and Fermi surface nesting in Li.
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Submitted 25 October, 2005;
originally announced October 2005.
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First-principles characterization of ferromagnetic Mn5Ge3 for spintronic applications
Authors:
S. Picozzi,
A. Continenza,
A. J. Freeman
Abstract:
In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory. Through a careful investigation of the bulk electronic and magnetic structure, our results for the total magnetization, atomic magnetic moments, metallic conduc…
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In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory. Through a careful investigation of the bulk electronic and magnetic structure, our results for the total magnetization, atomic magnetic moments, metallic conducting character and hyperfine fields are found to be in good agreement with experiments, and are elucidated in terms of a hybridization mechanism and exchange interaction. In order to assess the potential of this compound for spin-injection purposes, we calculate Fermi velocities and degree of spin-polarization; our results predict a rather high spin-injection efficiency in the diffusive regime along the hexagonal c-axis. Magneto-optical properties, such as L_2,3 X-ray magnetic circular dichroism, are also reported and await comparison with experimental data.
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Submitted 29 September, 2004;
originally announced September 2004.
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Superconducting properties of MgB2 from first principles
Authors:
A. Floris,
G. Profeta,
N. N. Lathiotakis,
M. Lüders,
M. A. L. Marques,
C. Franchini,
E. K. U. Gross,
A. Continenza,
S. Massidda
Abstract:
Solid MgB$_2$ has rather interesting and technologically important properties, such as a very high superconducting transition temperature. Focusing on this compound, we report the first non-trivial application of a novel density-functional-type theory for superconductors, recently proposed by the authors. Without invoking any adjustable parameters, we obtain the transition temperature, the gaps,…
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Solid MgB$_2$ has rather interesting and technologically important properties, such as a very high superconducting transition temperature. Focusing on this compound, we report the first non-trivial application of a novel density-functional-type theory for superconductors, recently proposed by the authors. Without invoking any adjustable parameters, we obtain the transition temperature, the gaps, and the specific heat of MgB$_2$ in very good agreement with experiment. Moreover, our calculations show how the Coulomb interaction acts differently on s and p states, thereby stabilizing the observed superconducting phase.
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Submitted 31 August, 2005; v1 submitted 31 August, 2004;
originally announced August 2004.
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Ab-initio theory of superconductivity - II: Applications to elemental metals
Authors:
M. A. L. Marques,
M. Lüders,
N. N. Lathiotakis,
G. Profeta,
A. Floris,
L. Fast,
A. Continenza,
E. K. U. Gross,
S. Massidda
Abstract:
The density functional theory for superconductors developed in the preceding article [cond-mat/0408685] is applied to the calculation of superconducting properties of several elemental metals. In particular, we present results for the transition temperature, for the gap at zero temperature, and for thermodynamic properties like the specific heat. We obtain an unprecedented agreement with experim…
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The density functional theory for superconductors developed in the preceding article [cond-mat/0408685] is applied to the calculation of superconducting properties of several elemental metals. In particular, we present results for the transition temperature, for the gap at zero temperature, and for thermodynamic properties like the specific heat. We obtain an unprecedented agreement with experimental results. Superconductors both with strong and weak electron-phonon coupling are equally well described. This demonstrates that, as far as conventional superconductivity is concerned, the first-principles prediction of superconducting properties is feasible.
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Submitted 31 August, 2005; v1 submitted 31 August, 2004;
originally announced August 2004.
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Ab-initio theory of superconductivity - I: Density functional formalism and approximate functionals
Authors:
M. Lüders,
M. A. L. Marques,
N. N. Lathiotakis,
A. Floris,
G. Profeta,
L. Fast,
A. Continenza,
S. Massidda,
E. K. U. Gross
Abstract:
A novel approach to the description of superconductors in thermal equilibrium is developed within a formally exact density-functional framework. The theory is formulated in terms of three ``densities'': the ordinary electron density, the superconducting order parameter, and the diagonal of the nuclear N-body density matrix. The electron density and the order parameter are determined by Kohn-Sham…
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A novel approach to the description of superconductors in thermal equilibrium is developed within a formally exact density-functional framework. The theory is formulated in terms of three ``densities'': the ordinary electron density, the superconducting order parameter, and the diagonal of the nuclear N-body density matrix. The electron density and the order parameter are determined by Kohn-Sham equations that resemble the Bogoliubov-de Gennes equations. The nuclear density matrix follows from a Schroedinger equation with an effective N-body interaction. These equations are coupled to each other via exchange-correlation potentials which are universal functionals of the three densities. Approximations of these exchange-correlation functionals are derived using the diagrammatic techniques of many-body perturbation theory. The bare Coulomb repulsion between the electrons and the electron-phonon interaction enter this perturbative treatment on the same footing. In this way, a truly ab-initio description is achieved which does not contain any empirical parameters.
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Submitted 31 August, 2005; v1 submitted 31 August, 2004;
originally announced August 2004.
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Impact ionization in GaAs: a screened exchange density functional approach
Authors:
S. Picozzi,
R. Asahi,
C. B. Geller,
A. Continenza,
A. J. Freeman
Abstract:
Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restricti…
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Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restrictions imposed by the conservation of energy and momentum. This anisotropy diminishes as the impacting electron energy increases. A Keldysh type fit performed on the energy-dependent rate shows a rather soft edge and a threshold energy greater than the direct band gap. The consistency with available Monte Carlo and empirical pseudopotential calculations shows the reliability of our approach and paves the way to ab-initio calculations of pair production rates in new and more complex materials.
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Submitted 24 August, 2001;
originally announced August 2001.
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Role of structural relaxations, chemical substitutions and polarization fields on the potential line-up in [0001] wurtzite GaN/Al systems
Authors:
S. Picozzi,
G. Profeta,
A. Continenza,
S. Massidda,
A. J. Freeman
Abstract:
First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is…
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First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is tested to evaluate the Schottky barrier in the presence of electric fields and used to show that their effect is quite small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, giving very good agreement with experimental values for the barrier. Stimulated by the complexity of the problem, we disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and electric fields) by studying auxiliary unrelaxed nitride/metal systems. Focusing on simple electronegativity arguments, we outline the leading mechanisms that result in the final values of the electric fields and Schottky barriers in these ideal interfaces. Finally, the transitivity rule in the presence of two inequivalent junctions is proved to give reliable results.
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Submitted 19 June, 2001;
originally announced June 2001.
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Electronic and structural properties of superconducting MgB$_2$, CaSi$_2$ and related compounds
Authors:
G. Satta,
G. Profeta,
F. Bernardini,
A. Continenza,
S. Massidda
Abstract:
We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-po…
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We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.
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Submitted 13 June, 2001;
originally announced June 2001.
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Coordination and chemical effects on the structural, electronic and magnetic properties in Mn pnictides
Authors:
A. Continenza,
S. Picozzi,
W. T. Geng,
A. J. Freeman
Abstract:
Simple structures of MnX binary compounds, namely hexagonal NiAs and zincblende, are studied as a function of the anion (X = Sb, As, P) by means of the all-electron FLAPW method within local spin density and generalized gradient approximations. An accurate analysis of the structural, electronic and magnetic properties reveals that the cubic structure greatly favours the magnetic alignment in the…
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Simple structures of MnX binary compounds, namely hexagonal NiAs and zincblende, are studied as a function of the anion (X = Sb, As, P) by means of the all-electron FLAPW method within local spin density and generalized gradient approximations. An accurate analysis of the structural, electronic and magnetic properties reveals that the cubic structure greatly favours the magnetic alignment in these compounds leading to high magnetic moments and nearly half-metallic behaviour for MnSb and MnAs. The effect of the anion chemical species is related to both its size and the possible hybridization with the Mn $d$ states; both contributions are seen to hinder the magnitude of the magnetic moment for small and light anions. Our results are in very good agreement with experiment - where available - and show that the generalized gradient approximation is essential to correctly recover both the equilibrium volume and magnetic moment.
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Submitted 21 February, 2001;
originally announced February 2001.
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Energetics and bonding properties of the Ni/$β$-SiC (001) interface: an ab-initio study
Authors:
G. Profeta,
A. Continenza,
A. J. Freeman
Abstract:
We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations.
Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high bindin…
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We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations.
Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high binding energies, about 7.3-7.4 eV, are shown to be related to strong $p$-$d$ hybridization, common to both surface terminations and different adsorption sites and despite the large mismatch, can stabilize overlayer growth. A detailed analysis of the bonding mechanism, hybridization of the surface states, charge transfer and surface core level shifts reveals the strong covalent character of the bonding. After a proper accounting of the Madelung term, the core level shift is shown to follow the charge transfer trend.
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Submitted 21 February, 2001;
originally announced February 2001.
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Electronic and structural properties of superconducting diborides and calcium disilicide in the $\rm AlB_2$ structure
Authors:
G. Satta,
G. Profeta,
F. Bernardini,
A. Continenza,
S. Massidda
Abstract:
We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-po…
▽ More
We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) %it is not yet know if it is a superconductor) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.
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Submitted 21 February, 2001; v1 submitted 20 February, 2001;
originally announced February 2001.
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Metal induced gap states and Schottky barrier heights at non-reactive GaN/noble metal interfaces
Authors:
S. Picozzi,
A. Continenza,
G. Satta,
S. Massidda,
A. J. Freeman
Abstract:
We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is a…
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We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is appreciable only in the first semiconductor layer close to the interface. The decay length of the gap states in the semiconductor side is about 2.0 $\pm$ 0.1 Å$\:$ and is independent of the deposited metal, therefore being to a good extent a bulk property of GaN. Our calculated values of the Schottky barrier heights are $Φ_{B_p}(GaN/Ag)$ = 0.87 eV and $Φ_{B_p}(GaN/Au)$ = 1.08 eV; both values are smaller than the GaN/Al value ($Φ_{B_p}(GaN/Al)$ = 1.51 eV) and this quite large spread of values excludes the possibility of a Fermi level pinning within the GaN band gap. Because of the low screening in GaN, the potential barrier at the junction is strongly affected by the structural arrangement of the first metal layer at the interface. This leads to quite large variations of the Schottky barrier height as a function of the metal, in contrast with the behavior of GaAs/metal interfaces.
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Submitted 23 February, 2000;
originally announced February 2000.
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Influence of the exchange reaction on the electronic structure of GaN/Al junctions
Authors:
S. Picozzi,
A. Continenza,
S. Massidda,
A. J. Freeman,
N. Newman
Abstract:
Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface polarity, and reacted intralayers) on the SBH at the Al/GaN (001) junction are specifically addressed. The el…
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Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface polarity, and reacted intralayers) on the SBH at the Al/GaN (001) junction are specifically addressed. The electronic structure of the following atomic configurations have been investigated theoretically: (i) an abrupt, relaxed GaN/Al interface; (ii) an interface which has undergone one monolayer of exchange reaction; and interfaces with a monolayer-thick interlayer of (iii) AlN and (iv) Ga$_{0.5}$Al$_{0.5}$N. Intermixed interfaces are found to pin the interface Fermi level at a position not significantly different from that of an abrupt interface. Our calculations also show that the interface band line--up is not strongly dependent on the interface morphology changes studied. The p-type SBH is reduced by less than 0.1 eV if the GaN surface is Ga-terminated compared to the N-terminated one. Moreover, we show that both an ultrathin Ga$_x$Al$_{1-x}$N ($x$ = 0, 0.5) intralayer and a Ga$\leftrightarrow$Al atomic swap at the interface does not significantly affect the Schottky barrier height.
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Submitted 9 July, 1998; v1 submitted 30 June, 1998;
originally announced June 1998.
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Electric fields and valence band offsets at strained [111] heterojunctions
Authors:
S. Picozzi,
A. Continenza,
A. J. Freeman
Abstract:
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its de…
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[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line-up is highly tunable, as a function of the strain conditions. Finally, we compare our results with those obtained for [001] heterojunctions.
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Submitted 3 February, 1997;
originally announced February 1997.
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Influence of growth direction and strain conditions on the band line-up at GaSb/InSb and InAs/InSb interfaces
Authors:
S. Picozzi,
A. Continenza,
A. J. Freeman
Abstract:
First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InSb…
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First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InSb side of the heterojunction, except for the common-anion system grown on an InSb substrate. The comparison between equivalent structures having the same substrate lattice constant, but different growth axis, shows that for comparable strain conditions, the ordering direction slightly influences the band line-up, due to small differences of the charge readjustment at the [001] and [111] interfaces. On the other hand, strain is shown to strongly affect the VBO; in particular, as the pseudomorphic growth conditions are varied, the bulk contribution to the band line-up changes markedly, whereas the interface term is almost constant. On the whole, our calculations yield a band line-up that decreases linearly as the substrate lattice constant is increased, showing its high tunability as a function of different pseudomorphic growth conditions. Finally, the band line-up at the lattice matched InAs/GaSb interface determined using the transitivity rule gave perfect agreement between predicted and experimental results.
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Submitted 31 January, 1997;
originally announced February 1997.
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Effects of epitaxial strain and ordering direction on the electronic properties of (GaSb)_1/(InSb)_1 and (InAs)_1/(InSb)_1 superlattices
Authors:
S. Picozzi,
A. Continenza,
A. J. Freeman
Abstract:
The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimental…
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The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimental interest (such as energy band-gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band-gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band-gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in (GaSb)_1/(InSb)_1 and 0.3 eV in (InAs)_1/(InSb)_1).
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Submitted 30 January, 1997;
originally announced January 1997.
