Showing 1–8 of 8 results for author: Constandinou, T G

A CMOS-based Characterisation Platform for Emerging RRAM Technologies

Authors: Andrea Mifsud, Jiawei Shen, Peilong Feng, Lijie Xie, Chaohan Wang, Yihan Pan, Sachin Maheshwari, Shady Agwa, Spyros Stathopoulos, Shiwei Wang, Alexander Serb, Christos Papavassiliou, Themis Prodromakis, Timothy G. Constandinou

Abstract: Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel… ▽ More Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device's resistance range to be between 1k$Ω$ and 10M$Ω$ with a minimum voltage range of $\pm$1.5V on the device. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Comments: 5 pages. To be published in ISCAS 2022 and made available on IEEE Xplore

An Open-Source RRAM Compiler

Authors: Dimitris Antoniadis, Andrea Mifsud, Peilong Feng, Timothy G. Constandinou

Abstract: Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is a potential candidate of future digital memories. To the best of the authors' knowledge, this paper presents the first open source RRAM compiler for automatic… ▽ More Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is a potential candidate of future digital memories. To the best of the authors' knowledge, this paper presents the first open source RRAM compiler for automatic memory generation including its peripheral circuits, verification and timing characterisation. The RRAM compiler is written with Cadence SKILL programming language and is integrated in Cadence environment. The layout verification procedure takes place in Siemens Mentor Calibre tool. The technology used by the compiler is TSMC 180nm. This paper analyses the novel results of a plethora of M x N RRAMs generated by the compiler, up to M = 128, N = 64 and word size B = 16 bits, for clock frequency equal to 12.5 MHz. Finally, the compiler achieves density of up to 0.024 Mb/mm2. △ Less

Submitted 31 May, 2022; v1 submitted 9 November, 2021; originally announced November 2021.

Comments: Final Version of NEWCAS 2022. 5 pages

Hermetic chip-scale packaging using Au:Sn eutectic bonding for implantable devices

Authors: Katarzyna M. Szostak, Meysam Keshavarz, Timothy G. Constandinou

Abstract: Advancements in miniaturisation and new capabilities of implantable devices impose a need for the development of compact, hermetic, and CMOS-compatible micro packaging methods. Gold-tin-based eutectic bonding presents the potential for achieving low-footprint seals with low permeability to moisture at process temperatures below 350\degree C. In this paper, a method for the deposition of gold-tin e… ▽ More Advancements in miniaturisation and new capabilities of implantable devices impose a need for the development of compact, hermetic, and CMOS-compatible micro packaging methods. Gold-tin-based eutectic bonding presents the potential for achieving low-footprint seals with low permeability to moisture at process temperatures below 350\degree C. In this paper, a method for the deposition of gold-tin eutectic alloy frames via sequential electroplating from commercially available solutions, with no special fabrication process, is described in detail. Bond quality was characterised through shear force measurements, scanning electron microscopy, visual inspection, and immersion tests. Characterisation of seals geometry, solder thickness, and bonding process parameters were evaluated, along with toxicity assessment of bonding layers to the human fibroblast cells. With a successful bond yield of over 70\% and no cytotoxic effect, AuSn eutectic bonding appears as a suitable method for the protection of integrated circuitry in implantable applications. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Comments: 16 pages, 12 figures, paper submitted to Journal of Micromechanics and Microengineering

Open-Source Memory Compiler for Automatic RRAM Generation and Verification

Authors: Dimitrios Antoniadis, Peilong Feng, Andrea Mifsud, Timothy G. Constandinou

Abstract: The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is directly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to… ▽ More The lack of open-source memory compilers in academia typically causes significant delays in research and design implementations. This paper presents an open-source memory compiler that is directly integrated within the Cadence Virtuoso environment using physical verification tools provided by Mentor Graphics (Calibre). It facilitates the entire memory generation process from netlist generation to layout implementation, and physical implementation verification. To the best of our knowledge, this is the first open-source memory compiler that has been developed specifically to automate Resistive Random Access Memory (RRAM) generation. RRAM holds the promise of achieving high speed, high density and non-volatility. A novel RRAM architecture, additionally is proposed, and a number of generated RRAM arrays are evaluated to identify their worst case control line parasitics and worst case settling time across the memristors of their cells. The total capacitance of lines SEL, N and P is 5.83 fF/cell, 3.31 fF/cell and 2.48 fF/cell respectively, while the total calculated resistance for SEL is 1.28 Ohm/cell and 0.14 Ohm/cell for both N and P lines. △ Less

Submitted 30 April, 2021; originally announced April 2021.

Comments: 4 pages

Hybrid CMOS/Memristor Circuit Design Methodology

Authors: Sachin Maheshwari, Spyros Stathopoulos, Jiaqi Wang, Alexander Serb, Yihan Pan, Andrea Mifsud, Lieuwe B. Leene, Jiawei Shen, Christos Papavassiliou, Timothy G. Constandinou, Themistoklis Prodromakis

Abstract: RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end desig… ▽ More RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate with examples an end-to-end design flow for RRAM-based electronics, from the introduction of a custom RRAM model into our chosen CAD tool to performing layout-versus-schematic and post-layout checks including the RRAM device. We envisage that this step-by-step guide to introducing RRAM into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with RRAM-enhanced systems. △ Less

Submitted 20 October, 2021; v1 submitted 3 December, 2020; originally announced December 2020.

Comments: This work has been accepted to the IEEE TCAS-I for possible publication

A 68 uW 31 kS/s Fully-Capacitive Noise-Shaping SAR ADC with 102 dB SNDR

Authors: Lieuwe B. Leene, Shiva Letchumanan, Timothy G. Constandinou

Abstract: This paper presents a 17 bit analogue-to-digital converter that incorporates mismatch and quantisation noise-shaping techniques into an energy-saving 10 bit successive approximation quantiser to increase the dynamic range by another 42 dB. We propose a novel fully-capacitive topology which allows for high-speed asynchronous conversion together with a background calibration scheme to reduce the ove… ▽ More This paper presents a 17 bit analogue-to-digital converter that incorporates mismatch and quantisation noise-shaping techniques into an energy-saving 10 bit successive approximation quantiser to increase the dynamic range by another 42 dB. We propose a novel fully-capacitive topology which allows for high-speed asynchronous conversion together with a background calibration scheme to reduce the oversampling requirement by 10x compared to prior-art. A 0.18 um CMOS technology is used to demonstrate preliminary simulation results together with analytic measures that optimise parameter and topology selection. The proposed system is able to achieve a FoMS of 183 dB for a maximum signal bandwidth of 15.6 kHz while dissipating 68 uW from a 1.8 V supply. A peak SNDR of 102 dB is demonstrated for this rate with a 0.201 mm^2 area requirement. △ Less

Submitted 20 March, 2019; originally announced March 2019.

Comments: 5 pages, 7 figures, conference, iscas, ieee, accepted submission

Decoding Hand Kinematics from Local Field Potentials Using Long Short-Term Memory (LSTM) Network

Authors: Nur Ahmadi, Timothy G. Constandinou, Christos-Savvas Bouganis

Abstract: Local field potential (LFP) has gained increasing interest as an alternative input signal for brain-machine interfaces (BMIs) due to its informative features, long-term stability, and low frequency content. However, despite these interesting properties, LFP-based BMIs have been reported to yield low decoding performances compared to spike-based BMIs. In this paper, we propose a new decoder based o… ▽ More Local field potential (LFP) has gained increasing interest as an alternative input signal for brain-machine interfaces (BMIs) due to its informative features, long-term stability, and low frequency content. However, despite these interesting properties, LFP-based BMIs have been reported to yield low decoding performances compared to spike-based BMIs. In this paper, we propose a new decoder based on long short-term memory (LSTM) network which aims to improve the decoding performance of LFP-based BMIs. We compare offline decoding performance of the proposed LSTM decoder to a commonly used Kalman filter (KF) decoder on hand kinematics prediction tasks from multichannel LFPs. We also benchmark the performance of LFP-driven LSTM decoder against KF decoder driven by two types of spike signals: single-unit activity (SUA) and multi-unit activity (MUA). Our results show that LFP-driven LSTM decoder achieves significantly better decoding performance than LFP-, SUA-, and MUA-driven KF decoders. This suggests that LFPs coupled with LSTM decoder could provide high decoding performance, robust, and low power BMIs. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Comments: Accepted for the 9th International IEEE EMBS Conference on Neural Engineering (NER 2019)

Simulating optical coherence tomography for observing nerve activity: a finite difference time domain bi-dimensional model

Authors: F. Troiani, K. Nikolic, T. G. Constandinou

Abstract: We present a finite difference time domain (FDTD) model for computation of A line scans in time domain optical coherence tomography (OCT). By simulating only the end of the two arms of the interferometer and computing the interference signal in post processing, it is possible to reduce the computational time required by the simulations and, thus, to simulate much bigger environments. Moreover, it… ▽ More We present a finite difference time domain (FDTD) model for computation of A line scans in time domain optical coherence tomography (OCT). By simulating only the end of the two arms of the interferometer and computing the interference signal in post processing, it is possible to reduce the computational time required by the simulations and, thus, to simulate much bigger environments. Moreover, it is possible to simulate successive A lines and thus obtaining a cross section of the sample considered. In this paper we present the model applied to two different samples: a glass rod filled with water-sucrose solution at different concentrations and a peripheral nerve. This work demonstrates the feasibility of using OCT for non-invasive, direct optical monitoring of peripheral nerve activity, which is a long-sought goal of neuroscience. △ Less

Submitted 15 November, 2017; originally announced November 2017.

Journal ref: PLOS ONE 2018, 13, 1-14