Showing 1–27 of 27 results for author: Clarke, J S

Operating two exchange-only qubits in parallel

Authors: Mateusz T. Mądzik, Florian Luthi, Gian Giacomo Guerreschi, Fahd A. Mohiyaddin, Felix Borjans, Jason D. Chadwick, Matthew J. Curry, Joshua Ziegler, Sarah Atanasov, Peter L. Bavdaz, Elliot J. Connors, J. Corrigan, H. Ekmel Ercan, Robert Flory, Hubert C. George, Benjamin Harpt, Eric Henry, Mohammad M. Islam, Nader Khammassi, Daniel Keith, Lester F. Lampert, Todor M. Mladenov, Randy W. Morris, Aditi Nethwewala, Samuel Neyens , et al. (16 additional authors not shown)

Abstract: Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua… ▽ More Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology. △ Less

Submitted 1 April, 2025; originally announced April 2025.

Short two-qubit pulse sequences for exchange-only spin qubits in 2D layouts

Authors: Jason D. Chadwick, Gian Giacomo Guerreschi, Florian Luthi, Mateusz T. Mądzik, Fahd A. Mohiyaddin, Prithviraj Prabhu, Albert T. Schmitz, Andrew Litteken, Shavindra Premaratne, Nathaniel C. Bishop, Anne Y. Matsuura, James S. Clarke

Abstract: Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a s… ▽ More Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a simple and fast optimization method, we generate complete pulse sequences for CX, CZ, iSWAP, leakage-controlled CX, and leakage-controlled CZ two-qubit gates on 450 unique planar six-dot topologies and analyze differences in sequence length (up to 43\% reduction) across topology classes. In addition, we show that relaxing constraints on post-operation spin locations can yield further reductions in sequence length; conversely, constraining these locations in a particular way generates a CXSWAP operation with minimal additional cost over a standard CX. We integrate this pulse library into the Intel quantum stack and experimentally verify pulse sequences on a Tunnel Falls chip for different operations in a linear-connectivity device to confirm that they work as expected. Finally, we explore architectural implications of these results for quantum error correction. Our work guides hardware and software design choices for future implementations of scalable quantum dot architectures. △ Less

Submitted 9 April, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Comments: 17 pages, 13 figures

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Authors: Hubert C. George, Mateusz T. Mądzik, Eric M. Henry, Andrew J. Wagner, Mohammad M. Islam, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew Curry, Michael K. Harper, Daniel Keith, Lester Lampert, Florian Luthi, Fahd A. Mohiyaddin, Sandra Murcia, Rohit Nair, Rambert Nahm, Aditi Nethwewala, Samuel Neyens, Bishnu Patra, Roy D. Raharjo, Carly Rogan, Rostyslav Savytskyy, Thomas F. Watson, Josh Ziegler , et al. (7 additional authors not shown)

Abstract: Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code name… ▽ More Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes. △ Less

Submitted 20 December, 2024; v1 submitted 21 October, 2024; originally announced October 2024.

Probing single electrons across 300 mm spin qubit wafers

Authors: Samuel Neyens, Otto K. Zietz, Thomas F. Watson, Florian Luthi, Aditi Nethwewala, Hubert C. George, Eric Henry, Mohammad Islam, Andrew J. Wagner, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew J. Curry, Daniel Keith, Roza Kotlyar, Lester F. Lampert, Mateusz T. Madzik, Kent Millard, Fahd A. Mohiyaddin, Stefano Pellerano, Ravi Pillarisetty, Mick Ramsey, Rostyslav Savytskyy, Simon Schaal, Guoji Zheng , et al. (5 additional authors not shown)

Abstract: Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev… ▽ More Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices. △ Less

Submitted 3 May, 2024; v1 submitted 10 July, 2023; originally announced July 2023.

Comments: 33 pages, 4 figures, 10 extended data figures. Supplementary Information available under "Ancillary files."

A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Authors: P. L. Bavdaz, H. G. J. Eenink, J. van Staveren, M. Lodari, C. G. Almudever, J. S. Clarke, F. Sebastiano, M. Veldhorst, G. Scappucci

Abstract: We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wi… ▽ More We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17~V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1~mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Spiderweb array: A sparse spin-qubit array

Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Yuanxing Xu, Toivo Hensgens, Richard Versluis, Henricus W. L. Naus, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

Abstract: One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowin… ▽ More One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowing for a significant reduction in the number of signal connections at the chip boundary. By arranging the qubits in a two-dimensional (2D) array with $\sim$12 $μ$m pitch, we create space to implement locally integrated sample-and-hold circuits. This allows to offset the inhomogeneities in the potential landscape across the array and to globally share the majority of the control signals for qubit operations. We make use of advanced circuit modeling software to go beyond conceptual drawings of the component layout, to assess the feasibility of the scheme through a concrete floor plan, including estimates of footprints for quantum and classical electronics, as well as routing of signal lines across the chip using different interconnect layers. We make use of local demultiplexing circuits to achieve an efficient signal-connection scaling leading to a Rent's exponent as low as $p = 0.43$. Furthermore, we use available data from state-of-the-art spin qubit and microelectronics technology development, as well as circuit models and simulations, to estimate the operation frequencies and power consumption of a million-qubit processor. This work presents a novel and complementary approach to previously proposed architectures, focusing on a feasible scheme to integrating quantum and classical hardware, and significantly closing the gap towards a fully CMOS-compatible quantum computer implementation. △ Less

Submitted 24 August, 2022; v1 submitted 30 September, 2021; originally announced October 2021.

Comments: 19 pages, 16 figures

Journal ref: Phys. Rev. Applied 18, 024053 (2022)

Qubits made by advanced semiconductor manufacturing

Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 23 pages, 4 figures, 12 supplementary figures

Journal ref: Nature Electronics 5, 184-190 (2022)

High-fidelity two-qubit gates in silicon above one Kelvin

Authors: L. Petit, M. Russ, H. G. J. Eenink, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to exec… ▽ More Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits. △ Less

Submitted 17 July, 2020; originally announced July 2020.

Comments: 7 pages, 5 figures

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato, Mario Lodari, Peter L. Bavdaz, Lucas Stehouwer, Payam Amin, James S. Clarke, Susan N. Coppersmith, Amir Sammak, Menno Veldhorst, Mark Friesen, Giordano Scappucci

Abstract: We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases… ▽ More We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces. △ Less

Submitted 29 September, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Lett. 125, 186801 (2020)

Enhancing a Near-Term Quantum Accelerator's Instruction Set Architecture for Materials Science Applications

Authors: Xiang Zou, Shavindra P. Premaratne, M. Adriaan Rol, Sonika Johri, Viacheslav Ostroukh, David J. Michalak, Roman Caudillo, James S. Clarke, Leonardo Dicarlo, A. Y. Matsuura

Abstract: Quantum computers with tens to hundreds of noisy qubits are being developed today. To be useful for real-world applications, we believe that these near-term systems cannot simply be scaled-down non-error-corrected versions of future fault-tolerant large-scale quantum computers. These near-term systems require specific architecture and design attributes to realize their full potential. To efficient… ▽ More Quantum computers with tens to hundreds of noisy qubits are being developed today. To be useful for real-world applications, we believe that these near-term systems cannot simply be scaled-down non-error-corrected versions of future fault-tolerant large-scale quantum computers. These near-term systems require specific architecture and design attributes to realize their full potential. To efficiently execute an algorithm, the quantum coprocessor must be designed to scale with respect to qubit number and to maximize useful computation within the qubits' decoherence bounds. In this work, we employ an application-system-qubit co-design methodology to architect a near-term quantum coprocessor. To support algorithms from the real-world application area of simulating the quantum dynamics of a material system, we design a (parameterized) arbitrary single-qubit rotation instruction and a two-qubit entangling controlled-Z instruction. We introduce dynamic gate set and paging mechanisms to implement the instructions. To evaluate the functionality and performance of these two instructions, we implement a two-qubit version of an algorithm to study a disorder-induced metal-insulator transition and run 60 random instances of it, each of which realizes one disorder configuration and contains 40 two-qubit instructions (or gates) and 104 single-qubit instructions. We observe the expected quantum dynamics of the time-evolution of this system. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: Received August 15, 2019; revised December 9, 2019; accepted December 13, 2019; date of publication January 28, 2020; date of current version February 14, 2020

Journal ref: in IEEE Transactions on Quantum Engineering, vol. 1, pp. 1-7, 2020, Art no. 4500307

A sparse spin qubit array with integrated control electronics

Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Toivo Hensgens, Richard Versluis, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

Abstract: Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer. Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Comments: Paper accompanying an invited talk at the 2019 IEEE International Electron Devices Meeting (IEDM), December 7-11, 2019

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4 (2020)

Universal quantum logic in hot silicon qubits

Authors: L. Petit, H. G. J. Eenink, M. Russ, W. I. L. Lawrie, N. W. Hendrickx, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is ext… ▽ More Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Nature 580, 355-359 (2020)

Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures

Authors: B. Paquelet Wuetz, P. L. Bavdaz, L. A. Yeoh, R. Schouten, H. van der Does, M. Tiggelman, D. Sabbagh, A. Sammak, C. G. Almudever, F. Sebastiano, J. S. Clarke, M. Veldhorst, G. Scappucci

Abstract: Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating… ▽ More Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems. △ Less

Submitted 26 July, 2019; originally announced July 2019.

Journal ref: npj Quantum Inf 6, 43 (2020)

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Authors: H. G. J. Eenink, L. Petit, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hu… ▽ More Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing. △ Less

Submitted 13 January, 2020; v1 submitted 19 July, 2019; originally announced July 2019.

Comments: 6 pages, 3 figures

Journal ref: Nano Letters 19 (12), 8653-8657 (2019)

Impact of qubit connectivity on quantum algorithm performance

Authors: Adam Holmes, Sonika Johri, Gian Giacomo Guerreschi, James S. Clarke, A. Y. Matsuura

Abstract: Quantum computing hardware is undergoing rapid development from proof-of-principle devices to scalable machines that could eventually challenge classical supercomputers on specific tasks. On platforms with local connectivity, the transition from one- to two-dimensional arrays of qubits is seen as a natural technological step to increase the density of computing power and to reduce the routing cost… ▽ More Quantum computing hardware is undergoing rapid development from proof-of-principle devices to scalable machines that could eventually challenge classical supercomputers on specific tasks. On platforms with local connectivity, the transition from one- to two-dimensional arrays of qubits is seen as a natural technological step to increase the density of computing power and to reduce the routing cost of limited connectivity. Here we map and schedule representative algorithmic workloads - the Quantum Fourier Transform (QFT) relevant to factoring, the Grover diffusion operator relevant to quantum search, and Jordan-Wigner parity rotations relevant to simulations of quantum chemistry and materials science - to qubit arrays with varying connectivity. In particular we investigate the impact of restricting the ideal all-to-all connectivity to a square grid, a ladder and a linear array of qubits. Our schedule for the QFT on a ladder results in running time close to that of a system with all-to-all connectivity. Our results suggest that some common quantum algorithm primitives can be optimized to have execution times on systems with limited connectivities, such as a ladder and linear array, that are competitive with systems that have all-to-all connectivity △ Less

Submitted 5 November, 2018; originally announced November 2018.

Journal ref: Quantum Sci. Technol. 5 025009 (2020)

Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

Authors: D. Sabbagh, N. Thomas, J. Torres, R. Pillarisetty, P. Amin, H. C. George, K. Singh, A. Budrevich, M. Robinson, D. Merrill, L. Ross, J. Roberts, L. Lampert, L. Massa, S. Amitonov, J. Boter, G. Droulers, H. G. J. Eenink, M. van Hezel, D. Donelson, M. Veldhorst, L. M. K. Vandersypen, J. S. Clarke, G. Scappucci

Abstract: We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of… ▽ More We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits. △ Less

Submitted 21 January, 2019; v1 submitted 15 October, 2018; originally announced October 2018.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Applied 12, 014013 (2019)

Rent's rule and extensibility in quantum computing

Authors: David P. Franke, James S. Clarke, Lieven M. K. Vandersypen, Menno Veldhorst

Abstract: Quantum computing is on the verge of a transition from fundamental research to practical applications. Yet, to make the step to large-scale quantum computation, an extensible qubit system has to be developed. In classical semiconductor technology, this was made possible by the invention of the integrated circuit, which allowed to interconnect large numbers of components without having to solder to… ▽ More Quantum computing is on the verge of a transition from fundamental research to practical applications. Yet, to make the step to large-scale quantum computation, an extensible qubit system has to be developed. In classical semiconductor technology, this was made possible by the invention of the integrated circuit, which allowed to interconnect large numbers of components without having to solder to each and every one of them. Similarly, we expect that the scaling of interconnections and control lines with the number of qubits will be a central bottleneck in creating large-scale quantum technology. Here, we define the quantum Rent's exponent $p$ to quantify the progress in overcoming this challenge at different levels throughout the quantum computing stack. We further discuss the concept of quantum extensibility as an indicator of a platform's potential to reach the large quantum volume needed for universal quantum computing and review extensibility limits faced by different qubit implementations on the way towards truly large-scale qubit systems. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Comments: 8 pages, 2 figures

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

Spin lifetime and charge noise in hot silicon quantum dot qubits

Authors: L. Petit, J. M. Boter, H. G. J. Eenink, G. Droulers, M. L. V. Tagliaferri, R. Li, D. P. Franke, K. J. Singh, J. S. Clarke, R. N. Schouten, V. V. Dobrovitski, L. M. K. Vandersypen, M. Veldhorst

Abstract: We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise… ▽ More We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures. △ Less

Submitted 1 September, 2018; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Lett. 121, 076801 (2018)

A Crossbar Network for Silicon Quantum Dot Qubits

Authors: R. Li, L. Petit, D. P. Franke, J. P. Dehollain, J. Helsen, M. Steudtner, N. K. Thomas, Z. R. Yoscovits, K. J. Singh, S. Wehner, L. M. K. Vandersypen, J. S. Clarke, M. Veldhorst

Abstract: The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum info… ▽ More The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future. △ Less

Submitted 10 November, 2017; originally announced November 2017.

Comments: 13 pages, 7 figures

Journal ref: Science Advances 4, eaar3960 (2018)

Interfacing spin qubits in quantum dots and donors - hot, dense and coherent

Authors: L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, M. Veldhorst

Abstract: Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ… ▽ More Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Comments: 13 pages, 4 figures

Journal ref: npj Quantum Information 3, 34 (2017)

Electron transport properties of sub-3-nm diameter copper nanowires

Authors: Sarah L. T. Jones, Alfonso Sanchez-Soares, John J. Plombon, Ananth P. Kaushik, Roger E. Nagle, James S. Clarke, James C. Greer

Abstract: Density functional theory and density functional tight-binding are applied to model electron transport in copper nanowires of approximately 1 nm and 3 nm diameters with varying crystal orientation and surface termination. The copper nanowires studied are found to be metallic irrespective of diameter, crystal orientation and/or surface termination. Electron transmission is highly dependent on cryst… ▽ More Density functional theory and density functional tight-binding are applied to model electron transport in copper nanowires of approximately 1 nm and 3 nm diameters with varying crystal orientation and surface termination. The copper nanowires studied are found to be metallic irrespective of diameter, crystal orientation and/or surface termination. Electron transmission is highly dependent on crystal orientation and surface termination. Nanowires oriented along the [110] crystallographic axis consistently exhibit the highest electron transmission while surface oxidized nanowires show significantly reduced electron transmission compared to unterminated nanowires. Transmission per unit area is calculated in each case, for a given crystal orientation we find that this value decreases with diameter for unterminated nanowires but is largely unaffected by diameter in surface oxidized nanowires for the size regime considered. Transmission pathway plots show that transmission is larger at the surface of unterminated nanowires than inside the nanowire and that transmission at the nanowire surface is significantly reduced by surface oxidation. Finally, we present a simple model which explains the transport per unit area dependence on diameter based on transmission pathways results. △ Less

Submitted 20 September, 2016; originally announced September 2016.

Journal ref: Physical Review B 92, 115413 (2015)

Effect of strain, thickness, and local surface environment on electron transport properties of oxygen-terminated copper thin films

Authors: Alfonso Sanchez-Soares, Sarah L. T. Jones, John J. Plombon, Ananth P. Kaushik, Roger E. Nagle, James S. Clarke, James C. Greer

Abstract: Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport properties within the ballistic regime. The variation of the electron transmission as a function of film thickness as well as the different contributions to the overall… ▽ More Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport properties within the ballistic regime. The variation of the electron transmission as a function of film thickness as well as the different contributions to the overall electron transmission as a function of depth into the the films is examined. Transmission at the oxidized copper film surfaces is found to be universally low. Films with thickness greater than 2.7 nm exhibit a similar behavior in local transmission per unit area with depth from the film surface; transmission per unit area initially increases rapidly and then plateaus at a depth of approximately 0.35-0.5 nm away from the surface, dependent on surface facet. Unstrained films tend to exhibit a higher transmission per unit area than corresponding films under tensile strain. △ Less

Submitted 30 September, 2016; v1 submitted 20 September, 2016; originally announced September 2016.

The histories interpretation: stability instead of consistency?

Authors: C. J. S. Clarke

Abstract: Using a reformulation of conventional results in decoherence theory, a condition is proposed for singling out a distinguished class of histories which includes those which use the ``pointer basis'' of Zurek. Using a reformulation of conventional results in decoherence theory, a condition is proposed for singling out a distinguished class of histories which includes those which use the ``pointer basis'' of Zurek. △ Less

Submitted 14 August, 2000; originally announced August 2000.

A rigidity result on the ideal boundary structure of smooth space-times

Authors: C. J. Fama, C. J. S. Clarke

Abstract: Following a survey of the abstract boundary definition of Scott and Szekeres, a rigidity result is proved for the smooth case, showing that the topological structure of the regular part of this boundary in invariantly defined. Following a survey of the abstract boundary definition of Scott and Szekeres, a rigidity result is proved for the smooth case, showing that the topological structure of the regular part of this boundary in invariantly defined. △ Less

Submitted 17 June, 1998; originally announced June 1998.

Comments: 14 pages, 2 figures; to appear in Clas. Quant. Grav

Journal ref: Class.Quant.Grav. 15 (1998) 2829-2840

Generalised hyperbolicity in singular space-times

Authors: C J S Clarke

Abstract: A new concept analogous to global hyperbolicity is introduced, based on test fields. It is shown that the space-times termed here ``curve integrable'' are globally hyperbolic in this new sense, and a plausibility argument is given suggesting that the result applies to shell crossing singularities. If the assumptions behind this last argument are valid, this provides an alternative route to the a… ▽ More A new concept analogous to global hyperbolicity is introduced, based on test fields. It is shown that the space-times termed here ``curve integrable'' are globally hyperbolic in this new sense, and a plausibility argument is given suggesting that the result applies to shell crossing singularities. If the assumptions behind this last argument are valid, this provides an alternative route to the assertion that such singularities do not violate cosmic censorship. △ Less

Submitted 25 April, 1997; v1 submitted 18 February, 1997; originally announced February 1997.

Comments: This replacement alters the type of solution considered from "weak" to a solution lying in a specified function space. 9 pages, TeX, eps figure included with psfig

Journal ref: Class.Quant.Grav. 15 (1998) 975-984

Generalised Functions and Distributional Curvature of Cosmic Strings

Authors: C J S Clarke, J A Vickers, J P Wilson

Abstract: A new method is presented for assigning distributional curvature, in an invariant manner, to a space-time of low differentiability, using the techniques of Colombeau's `new generalised functions'. The method is applied to show that curvature of a cone is equivalent to a delta function. The same is true under small enough perturbations. A new method is presented for assigning distributional curvature, in an invariant manner, to a space-time of low differentiability, using the techniques of Colombeau's `new generalised functions'. The method is applied to show that curvature of a cone is equivalent to a delta function. The same is true under small enough perturbations. △ Less

Submitted 28 May, 1996; originally announced May 1996.

Comments: 11 pages, plain TeX

Journal ref: Class.Quant.Grav. 13 (1996) 2485-2498