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Two-dimensional Si spin qubit arrays with multilevel interconnects
Authors:
Sieu D. Ha,
Edwin Acuna,
Kate Raach,
Zachery T. Bloom,
Teresa L. Brecht,
James M. Chappell,
Maxwell D. Choi,
Justin E. Christensen,
Ian T. Counts,
Dominic Daprano,
J. P. Dodson,
Kevin Eng,
David J. Fialkow,
Christina A. C. Garcia,
Wonill Ha,
Thomas R. B. Harris,
nathan holman,
Isaac Khalaf,
Justine W. Matten,
Christi A. Peterson,
Clifford E. Plesha,
Matthew J. Ruiz,
Aaron Smith,
Bryan J. Thomas,
Samuel J. Whiteley
, et al. (4 additional authors not shown)
Abstract:
The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semi…
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The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.
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Submitted 12 February, 2025;
originally announced February 2025.
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Coherent control of a triangular exchange-only spin qubit
Authors:
Edwin Acuna,
Joseph D. Broz,
Kaushal Shyamsundar,
Antonio B. Mei,
Colin P. Feeney,
Valerie Smetanka,
Tiffany Davis,
Kangmu Lee,
Maxwell D. Choi,
Brydon Boyd,
June Suh,
Wonill D. Ha,
Cameron Jennings,
Andrew S. Pan,
Daniel S. Sanchez,
Matthew D. Reed,
Jason R. Petta
Abstract:
We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking,…
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We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking, with an average single-qubit gate fidelity F = 99.84%. The compact triangular device geometry can be readily scaled to larger two-dimensional quantum dot arrays with high connectivity.
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Submitted 5 June, 2024;
originally announced June 2024.
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A flexible design platform for Si/SiGe exchange-only qubits with low disorder
Authors:
Wonill Ha,
Sieu D. Ha,
Maxwell D. Choi,
Yan Tang,
Adele E. Schmitz,
Mark P. Levendorf,
Kangmu Lee,
James M. Chappell,
Tower S. Adams,
Daniel R. Hulbert,
Edwin Acuna,
Ramsey S. Noah,
Justine W. Matten,
Michael P. Jura,
Jeffrey A. Wright,
Matthew T. Rakher,
Matthew G. Borselli
Abstract:
Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that ar…
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Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.
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Submitted 22 July, 2021;
originally announced July 2021.
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A 3x3 dilation counterexample
Authors:
Man Duen Choi,
Kenneth R. Davidson
Abstract:
We define four 3x3 commuting contractions which do not dilate to commuting isometries. However they do satisfy the scalar von Neumann inequality. These matrices are all nilpotent of order 2. We also show that any three $3\times3$ commuting contractions which are scalar plus nilpotent of order 2 do dilate to commuting isometries.
We define four 3x3 commuting contractions which do not dilate to commuting isometries. However they do satisfy the scalar von Neumann inequality. These matrices are all nilpotent of order 2. We also show that any three $3\times3$ commuting contractions which are scalar plus nilpotent of order 2 do dilate to commuting isometries.
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Submitted 29 February, 2012;
originally announced March 2012.
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Lattice polytopes with distinct pair-sums
Authors:
M. D. Choi,
T. Y. Lam,
Bruce Reznick
Abstract:
Let P be a lattice polytope in R^n, and let P \cap Z^n = {v_1,...,v_N}. If the N + \binom N2 points 2v_1,...,2v_N; v_1+v_2,...v_{N-1}+v_N are distinct, we say that P is a "distinct pair-sum" or "dps" polytope. We show that, if P is a dsp polytope in R^n, then N \le 2^n, and, for every n, we construct dps polytopes in R^n which contain 2^n lattice points. We also discuss the relation between dps…
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Let P be a lattice polytope in R^n, and let P \cap Z^n = {v_1,...,v_N}. If the N + \binom N2 points 2v_1,...,2v_N; v_1+v_2,...v_{N-1}+v_N are distinct, we say that P is a "distinct pair-sum" or "dps" polytope. We show that, if P is a dsp polytope in R^n, then N \le 2^n, and, for every n, we construct dps polytopes in R^n which contain 2^n lattice points. We also discuss the relation between dps polytopes and the study of sums of squares of real polynomials.
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Submitted 10 November, 2000;
originally announced November 2000.
