Silicon $4π$ spectrometer for $β$-decay electrons with energies up to 3~MeV
Authors:
I. E. Alexeev,
S. V. Bakhlanov,
E. A. Chmel,
A. V. Derbin,
I. S. Drachnev,
I. M. Kotina,
M. S. Mikulich,
V. N. Muratova,
N. V. Nyazova,
D. A. Semenov,
M. V. Trushin,
E. V. Unzhakov
Abstract:
We present a description of the originally developed $β$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4π$-geometry. The full absorption spectrometer allows for direct measurements of $β$-spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $β$-spectra of transition…
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We present a description of the originally developed $β$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4π$-geometry. The full absorption spectrometer allows for direct measurements of $β$-spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $β$-spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $γ$-quanta in coincidence with the pair of Si(Li)-spectrometers.
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Submitted 21 October, 2022;
originally announced October 2022.