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Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators
Authors:
Birkan Düzel,
Christian Riha,
Karl Graser,
Olivio Chiatti,
Saskia F. Fischer
Abstract:
Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface sta…
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Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are constant below 10 K and the magnetoresistance shows weak antilocalization as expected for low-temperature transport properties dominated by gapless surface states of so-called three-dimensional topological "insulators". However, the magnetoresistance also shows a hysteresis depending on the sweep rate and the magnetic field direction. Here, we provide evidence that such magnetoresistance hysteresis is enhanced if both three-dimensional bulk states and quasi-two-dimensional topological states contribute to the transport ($x$ = 0 and 0.03), and it is mostly suppressed if the topological states govern transport ($x$ = 0.015). The results are discussed in terms of spin-dependent scattering between the different available states
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Submitted 15 February, 2024; v1 submitted 28 December, 2022;
originally announced December 2022.
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In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
Authors:
Olivio Chiatti,
Johannes Boy,
Christian Heyn,
Wolfgang Hansen,
Saskia F. Fischer
Abstract:
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about 6.8$\times$10$^{11}$ cm$^{-2}$,…
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The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about 6.8$\times$10$^{11}$ cm$^{-2}$, mobility of 1.8$\times$10$^5$ cm$^2$/Vs and an effective mass of 0.042$m_e$ after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Landé-factor of |g$^*$| = 16, enabling the resolution of spin-split subbands at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors $ν$ = 1 und $ν$ = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by $Δ$B $\approx$ 0.1 T and is consistent with an effective magnetic field of B$_{eff}$ $\approx$ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.
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Submitted 7 February, 2024; v1 submitted 23 December, 2022;
originally announced December 2022.
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Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe$_2$ monolayers
Authors:
Olivio Chiatti,
Klara Mihov,
Theodor U. Griffin,
Corinna Grosse,
Matti B. Alemayehu,
Kyle Hite,
Danielle Hamann,
Anna Mogilatenko,
David C. Johnson,
Saskia F. Fischer
Abstract:
The interplay between charge transfer and electronic disorder in transition-metal dichalcogenide multilayers gives rise to superconductive coupling driven by proximity enhancement, tunneling and superconducting fluctuations, of a yet unwieldy variety. Artificial spacer layers introduced with atomic precision change the density of states by charge transfer. Here, we tune the superconductive couplin…
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The interplay between charge transfer and electronic disorder in transition-metal dichalcogenide multilayers gives rise to superconductive coupling driven by proximity enhancement, tunneling and superconducting fluctuations, of a yet unwieldy variety. Artificial spacer layers introduced with atomic precision change the density of states by charge transfer. Here, we tune the superconductive coupling between NbSe$_2$ monolayers from proximity-enhanced to tunneling-dominated. We correlate normal and superconducting properties in [(SnSe)$_{1+δ}$]$_m$[NbSe$_2$]$_1$ tailored multilayers with varying SnSe layer thickness. From high-field magnetotransport the critical fields yield Ginzburg-Landau coherence lengths with an increase of 140 % cross-plane , trending towards two-dimensional superconductivity for m > 9. We show cross-over between three regimes: metallic with proximity-enhanced coupling, disordered-metallic with intermediate coupling and insulating with Josephson tunneling. Our results demonstrate that stacking metal mono- and dichalcogenides allows to convert a metal/superconductor into an insulator/superconductor system, prospecting the control of two-dimensional superconductivity in embedded layers.
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Submitted 2 December, 2022;
originally announced December 2022.
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Excess noise in Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings
Authors:
Christian Riha,
Sven S. Buchholz,
Olivio Chiatti,
Andreas D. Wieck,
Dirk Reuter,
Saskia F. Fischer
Abstract:
Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases a…
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Cross-correlated noise measurements are performed in etched Al${}_\text{x}$Ga${}_\text{1-x}$As/GaAs based quantum rings in equilibrium at bath temperature of $T_\text{bath}=4.2\text{ K}$. The measured white noise exceeds the thermal (Johnson-Nyquist) noise expected from the measured electron temperature $T_\text{e}$ and the electrical resistance $R$. This excess part of the white noise decreases as $T_\text{bath}$ increases and vanishes for $T_\text{bath}\geq 12\text{ K}$. Excess noise is neither observed if one arm of a quantum ring is depleted of electrons nor in 1D-constrictions that have a length and width comparable to the quantum rings. A model is presented that suggests that the excess noise originates from the correlation of noise sources, mediated by phase-coherent propagation of electrons.
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Submitted 9 December, 2019;
originally announced December 2019.
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Transport Properties and Finite Size Effects in $β$-Ga$_2$O$_3$ Thin Films
Authors:
Robin Ahrling,
Johannes Boy,
Martin Handwerg,
Olivio Chiatti,
Rüdiger Mitdank,
Günter Wagner,
Zbigniew Galazka,
Saskia F. Fischer
Abstract:
Thin films of the wide band gap semiconductor $β$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown \mbox{(100)-orientated $β$-Ga…
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Thin films of the wide band gap semiconductor $β$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transport properties in thin films. The conductivities, Hall densities and mobilities in thin homoepitaxially MOVPE grown \mbox{(100)-orientated $β$-Ga$_2$O$_3$} films were measured as a function of temperature and film thickness. At room temperature, the electron mobilities ((115$\pm$10) $\mathrm{\frac{cm^2}{Vs}}$) in thicker films (> 150 nm) are comparable to the best of bulk. However, the mobility is strongly reduced by more than two orders of magnitude with decreasing film thickness ((5.5$\pm$0.5) $\mathrm{\frac{cm^2}{Vs}}$ for a 28 nm thin film). We find that the commonly applied classical Fuchs-Sondheimer model does not explain the contribution of electron scattering at the film surfaces sufficiently. Instead, by applying an electron wave model by Bergmann, a contribution to the mobility suppression due to the large de Broglie wavelength in $β$-Ga$_2$O$_3$ is proposed as a limiting quantum mechanical size effect.
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Submitted 27 September, 2018; v1 submitted 1 August, 2018;
originally announced August 2018.
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High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$
Authors:
Marco Busch,
Olivio Chiatti,
Sergio Pezzini,
Steffen Wiedmann,
Jaime Sánchez-Barriga,
Oliver Rader,
Lada V. Yashina,
Saskia F. Fischer
Abstract:
Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional…
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Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$ cm$^{-3}$. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi$_2$Se$_3$ and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.
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Submitted 28 July, 2017;
originally announced July 2017.
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2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes
Authors:
Olivio Chiatti,
Christian Riha,
Dominic Lawrenz,
Marco Busch,
Srujana Dusari,
Jaime Sánchez-Barriga,
Anna Mogilatenko,
Lada V. Yashina,
Sergio Valencia,
Akin A. Ünal,
Oliver Rader,
Saskia F. Fischer
Abstract:
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related…
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Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
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Submitted 6 June, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures
Authors:
Olivio Chiatti,
Sven S. Buchholz,
Christian Heyn,
Wolfgang Hansen,
Mehdi Pakmehr,
Bruce D. McCombe,
Saskia F. Fischer
Abstract:
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quan…
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Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4 nm InAs inserted channel. The two-dimensional electron gas is at 53 nm depth and has a carrier density of about $6\times10^{11}$ cm$^{-2}$ and mobility of about $2\times10^{5}$ cm$^2$/Vs, after illumination. Electrical and THz optical transport measurements at low temperatures and in high magnetic fields reveal an effective mass of 0.038$m_{0}$ and an anisotropic $g$-factor of up to 20, larger than for bulk InAs or InAs-based heterostructures. We demonstrate that quasi-one-dimensional channels can be formed by micro-laser lithography. The population of subbands is controlled by in-plane gates. Contrary to previous reports symmetric and asymmetric in-plane gate voltages applied to quasi-one dimensional channels did not show indications of SOI-induced anomalies in the conductance.
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Submitted 9 February, 2015; v1 submitted 30 October, 2014;
originally announced October 2014.
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Mode-selected heat flow through a one-dimensional waveguide network
Authors:
Christian Riha,
Philipp Miechowski,
Sven S. Buchholz,
Olivio Chiatti,
Andreas D. Wieck,
Dirk Reuter,
Saskia F. Fischer
Abstract:
Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current $I_{\text{h}}$ in a source 2D reservoir, are transmitted through the…
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Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current $I_{\text{h}}$ in a source 2D reservoir, are transmitted through the ballistic 1D waveguide and relax in a drain 2D reservoir. We find that the electron temperature increase $ΔT_{\text{e}}$ in the drain is proportional to the square of the heating current $I_{\text{h}}$, as expected from Joule's law. No temperature increase is observed in the drain when the 1D waveguide does not transmit electrons. Therefore, we conclude that electron-phonon interaction is negligible for heat transport between 2D reservoirs at temperatures below 4.2 K. Furthermore, mode control of the 1D electron waveguide by application of a top-gate voltage reveals that $ΔT_{\text{e}}$ is not proportional to the number of populated subbands $N$, as previously observed in single 1D conductors. This can be explained with the splitting of the heat flow in the 1D waveguide network.
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Submitted 26 March, 2015; v1 submitted 10 October, 2014;
originally announced October 2014.
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Noise thermometry in narrow 2D electron gas heat baths connected to a quasi-1D interferometer
Authors:
Sven S. Buchholz,
Elmar Sternemann,
Olivio Chiatti,
Dirk Reuter,
Andreas D. Wieck,
Saskia F. Fischer
Abstract:
Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in…
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Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in one heating channel, we perform cross-correlated noise measurements locally in the directly heated channel and nonlocally in the other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection. We observe the same functional dependence of the thermal noise on the heating current. The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D systems. In the quantum interferometer, we show the decoherence due to the diffusion of hot electrons from the heating channel into the quasi-1D system, which causes a thermal gradient.
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Submitted 31 May, 2012; v1 submitted 7 November, 2011;
originally announced November 2011.
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Interplay of Spin and Lattice Degrees of Freedom in the Frustrated Antiferromagnet CdCr_2O_4: High-field and Temperature Induced Anomalies of the Elastic Constants
Authors:
Subhro Bhattacharjee,
S. Zherlitsyn,
O. Chiatti,
A. Sytcheva,
J. Wosnitza,
R. Moessner,
M. E. Zhitomirsky,
P. Lemmens,
V. Tsurkan,
A. Loidl
Abstract:
Temperature and magnetic field studies of the elastic constants of the chromium spinel CdCr_2O_4 show pronounced anomalies related to strong spin-phonon coupling in this frustrated antiferromagnet. A detailed comparison of the longitudinal acoustic mode propagating along the [111] direction with theory based on an exchange-striction mechanism leads to an estimate of the strength of the magneto-ela…
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Temperature and magnetic field studies of the elastic constants of the chromium spinel CdCr_2O_4 show pronounced anomalies related to strong spin-phonon coupling in this frustrated antiferromagnet. A detailed comparison of the longitudinal acoustic mode propagating along the [111] direction with theory based on an exchange-striction mechanism leads to an estimate of the strength of the magneto-elastic interaction. The derived spin-phonon coupling constant is in good agreement with previous determinations based on infrared absorption. Further insight is gained from intermediate and high magnetic field experiments in the field regime of the magnetization plateau. The role of the antisymmetric Dzyaloshinskii-Moriya interaction discussed and we compare the spin-phonon coupling in CdCr_2O_4 in both the ordered and disordered states.
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Submitted 5 May, 2011; v1 submitted 17 November, 2010;
originally announced November 2010.
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Character of magnetic excitations in a quasi-one-dimensional antiferromagnet near the quantum critical points: Impact on magneto-acoustic properties
Authors:
O. Chiatti,
A. Sytcheva,
J. Wosnitza,
S. Zherlitsyn,
A. A. Zvyagin,
V. S. Zapf,
M. Jaime,
A. Paduan-Filho
Abstract:
We report results of magneto-acoustic studies in the quantum spin-chain magnet NiCl$_2$-4SC(NH$_2$)$_2$ (DTN) having a field-induced ordered antiferromagnetic (AF) phase. In the vicinity of the quantum critical points (QCPs) the acoustic $c_{33}$ mode manifests a pronounced softening accompanied by energy dissipation of the sound wave. The acoustic anomalies are traced up to $T > T_N$, where the…
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We report results of magneto-acoustic studies in the quantum spin-chain magnet NiCl$_2$-4SC(NH$_2$)$_2$ (DTN) having a field-induced ordered antiferromagnetic (AF) phase. In the vicinity of the quantum critical points (QCPs) the acoustic $c_{33}$ mode manifests a pronounced softening accompanied by energy dissipation of the sound wave. The acoustic anomalies are traced up to $T > T_N$, where the thermodynamic properties are determined by fermionic magnetic excitations, the "hallmark" of one-dimensional (1D) spin chains. On the other hand, as established in earlier studies, the AF phase in DTN is governed by bosonic magnetic excitations. Our results suggest the presence of a crossover from a 1D fermionic to a 3D bosonic character of the magnetic excitations in DTN in the vicinity of the QCPs.
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Submitted 9 September, 2008;
originally announced September 2008.
