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Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon
Authors:
Gregory D. Grant,
Jiefei Zhang,
Ignas Masiulionis,
Swarnabha Chattaraj,
Kathryn E. Sautter,
Sean E. Sullivan,
Rishi Chebrolu,
Yuzi Liu,
Jessica B. Martins,
Jens Niklas,
Alan M. Dibos,
Sumit Kewalramani,
John W. Freeland,
Jianguo Wen,
Oleg G. Poluektov,
F. Joseph Heremans,
David D. Awschalom,
Supratik Guha
Abstract:
Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelengt…
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Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelength (~1.5 $μ$m) 4f-4f transition of erbium, a predicted long electron spin coherence time supported by CeO$_2$, and is also near lattice-matched to silicon for heteroepitaxial growth. In this work, we report on the epitaxial growth of Er:CeO$_2$ thin films on silicon using molecular beam epitaxy (MBE), with controlled erbium concentration down to 2 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO$_2$ host structure, and characterize the spin and optical properties of the embedded Er$^{3+}$ ions. In the 2-3 ppm Er regime, we identify EPR linewidths of 245(1) MHz, optical inhomogeneous linewidths of 9.5(2) GHz, optical excited state lifetimes of 3.5(1) ms, and spectral diffusion-limited homogenoeus linewidths as narrow as 4.8(3) MHz in the as-grown material. We test annealing of the Er:CeO$_2$ films up to 900 deg C, which yields modest narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%. We have also studied the variation of the optical properties as a function of Er doping and find that the results are consistent with the trends expected from inter-dopant charge interactions.
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Submitted 28 September, 2023;
originally announced September 2023.
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Flatbands in twisted double bilayer graphene
Authors:
Narasimha Raju Chebrolu,
Bheema Lingam Chittari,
Jeil Jung
Abstract:
Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer graphene, or twisted double bilayer graphene, to find the parameter space where isolated flatbands can emerge as a function of twist angle, vertical pressure, an…
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Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer graphene, or twisted double bilayer graphene, to find the parameter space where isolated flatbands can emerge as a function of twist angle, vertical pressure, and interlayer potential differences. We find that in twisted bi-bilayer graphene the bandwidth is generally flatter than in twisted bilayer graphene by roughly up to a factor of two in the same parameter space of twist angle $θ$ and interlayer coupling $ω$, making it in principle simpler to tailor narrow bandwidth flatbands. Application of vertical pressure can enhance the first magic angle in minimal models at $θ\sim 1.05^{\circ}$ to larger values of up to $θ\sim 1.5^{\circ}$ when $ P \sim 2.5$~GPa, where $θ\propto ω/ \upsilon_{F}$. Narrow bandwidths are expected in bi-bilayers for a continuous range of small twist angles, i.e. without magic angles, when intrinsic bilayer gaps open by electric fields, or due to remote hopping terms. We find that moderate vertical electric fields can contribute in lifting the degeneracy of the low energy flatbands by enhancing the primary gap near the Dirac point and the secondary gap with the higher energy bands. Distinct valley Chern bands are expected near $0^{\circ}$ or $180^{\circ}$ alignments.
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Submitted 20 June, 2019; v1 submitted 24 January, 2019;
originally announced January 2019.
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A Brief Survey on Autonomous Vehicle Possible Attacks, Exploits and Vulnerabilities
Authors:
Amara Dinesh Kumar,
Koti Naga Renu Chebrolu,
Vinayakumar R,
Soman KP
Abstract:
Advanced driver assistance systems are advancing at a rapid pace and all major companies started investing in developing the autonomous vehicles. But the security and reliability is still uncertain and debatable. Imagine that a vehicle is compromised by the attackers and then what they can do. An attacker can control brake, accelerate and even steering which can lead to catastrophic consequences.…
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Advanced driver assistance systems are advancing at a rapid pace and all major companies started investing in developing the autonomous vehicles. But the security and reliability is still uncertain and debatable. Imagine that a vehicle is compromised by the attackers and then what they can do. An attacker can control brake, accelerate and even steering which can lead to catastrophic consequences. This paper gives a very short and brief overview of most of the possible attacks on autonomous vehicle software and hardware and their potential implications.
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Submitted 3 October, 2018;
originally announced October 2018.
