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Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500$^\circ$C
Authors:
Gabriel Ferro,
Davy Carole,
Didier Chaussende
Abstract:
The thermochromic properties (color change with temperature) of n type doped SiC wafers of different polytypes (3C, 4H and 6H) have been investigated up to 500$^\circ$C under air. It was found that 3C-SiC color passes from bright yellow at room temperature to deep orangeat 500$^\circ$C leading to a color contrast ($Δ$E) as high as 64. The hexagonal polytypes undergo also a color change upon heatin…
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The thermochromic properties (color change with temperature) of n type doped SiC wafers of different polytypes (3C, 4H and 6H) have been investigated up to 500$^\circ$C under air. It was found that 3C-SiC color passes from bright yellow at room temperature to deep orangeat 500$^\circ$C leading to a color contrast ($Δ$E) as high as 64. The hexagonal polytypes undergo also a color change upon heating but far less pronounced, with $Δ$E values <20. All these semiconductors undergo band gap shrinkage upon heating which effect largely participated to the observed color change. This effect is very sensitive for 3C polytypesince its bandgap is already in the visible energy range at room temperature. The thermochromicity of 3C-SiC was found to be reversible thanks to its thermal stability and its resistance towards oxidation.
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Submitted 11 October, 2024;
originally announced October 2024.
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Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon
Authors:
Xinming Xing,
Takeshi Yoshikawa,
Didier Chaussende
Abstract:
Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a function of both azimuthal and off-axis angles. Different surface characteristics are revealed on two polar surfaces where only the Si face reflects the six-fold symmetry of 4H-SiC crystal. On the Si face, the step bunchi…
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Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a function of both azimuthal and off-axis angles. Different surface characteristics are revealed on two polar surfaces where only the Si face reflects the six-fold symmetry of 4H-SiC crystal. On the Si face, the step bunching along the <1100> direction is stronger than the <1120> direction, which is related to the bonding state at the step edge. More significant step bunching is observed on the C face whereas it is not sensitive to azimuthal orientation. The extent of step faceting is stronger on the Si face. The step faceting is independent of the off angle on both polarities of SiC {0001} surfaces.
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Submitted 25 February, 2022;
originally announced February 2022.
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Al4SiC4 vibrational properties: Density Functional Theory calculations compared to Raman and Infrared spectroscopy measurements
Authors:
L. Pedesseau,
O. Chaix-Pluchery,
M. Modreanu,
D. Chaussende,
E. Sarigiannidou,
A. Rolland,
J. Even,
O. Durand
Abstract:
Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high temperature solution growth method. The experimental results are compared with the full theoretical analysis of vibrational properties based on Density Fun…
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Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high temperature solution growth method. The experimental results are compared with the full theoretical analysis of vibrational properties based on Density Functional Theory calculations that are revisited here. We have obtained a good agreement between the experimental and calculated Raman phonon modes and this allowed the symmetry assignment of all the measured Raman modes. We have revisited the DFT calculation of the IR active phonon modes and our results for LO-TO splitting indicate a substantial decrease of the variation of omega(LO-TO) compared with the previous reported calculation. Moreover, most of the IR modes have been symmetry assigned from the comparison of the experimental IR spectra with the corresponding Raman spectra and the Al4SiC4 calculated phonon modes.
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Submitted 16 December, 2016;
originally announced December 2016.
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Al4SiC4 würtzite crystal: structural, optoelectronic, elastic and piezoelectric properties
Authors:
L. Pedesseau,
J. Even,
M. Modreanu,
D. Chaussende,
O. Chaix-Pluchery,
O. Durand
Abstract:
New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the Born charges, the elastic and piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band s…
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New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the Born charges, the elastic and piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap Würtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5eV and 3.2 eV respectively.
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Submitted 3 August, 2015; v1 submitted 24 July, 2015;
originally announced July 2015.
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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Authors:
Camilla Coletti,
Stiven Forti,
Alessandro Principi,
Konstantin V. Emtsev,
Alexei A. Zakharov,
Kevin M. Daniels,
Biplob K. Daas,
M. V. S. Chandrashekhar,
Thierry Ouisse,
Didier Chaussende,
Allan H. MacDonald,
Marco Polini,
Ulrich Starke
Abstract:
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trila…
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In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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Submitted 28 February, 2014;
originally announced February 2014.
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Epitaxial graphene morphologies probed by weak (anti)-localization
Authors:
Ather Mahmood,
Cécile Naud,
Clément Bouvier,
Fanny Hiebel,
Pierre Mallet,
Jean-Yves Veuillen,
Laurent Levy,
Didier Chaussende,
Thierry Ouisse
Abstract:
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferr…
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We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
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Submitted 1 March, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
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Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Authors:
Camilla Coletti,
Konstantin V. Emtsev,
Alexei A. Zakharov,
Thierry Ouisse,
Didier Chaussende,
Ulrich Starke
Abstract:
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spe…
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Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.
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Submitted 28 September, 2011;
originally announced September 2011.
