-
Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature
Authors:
O. J. Amin,
S. F. Poole,
S. Reimers,
L. X. Barton,
F. Maccherozzi,
S. S. Dhesi,
V. Novák,
F. Křížek,
J. S. Chauhan,
R. P. Campion,
A. W. Rushforth,
T. Jungwirth,
O. A. Tretiakov,
K. W. Edmonds,
P. Wadley
Abstract:
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the…
▽ More
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.
△ Less
Submitted 1 July, 2022;
originally announced July 2022.
-
Current-polarity dependent manipulation of antiferromagnetic domains
Authors:
P. Wadley,
S. Reimers,
M. J. Grzybowski,
C. Andrews,
M. Wang,
J. S. Chauhan,
B. L. Gallagher,
R. P. Campion,
K. W. Edmonds,
S. S. Dhesi,
F. Maccherozzi,
V. Novak,
J. Wunderlich,
T. Jungwirth
Abstract:
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plan…
▽ More
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using x-ray magnetic linear dichroism microscopy, and can also be detected electrically. The switching by domain wall motion can occur at much lower current densities than those needed for coherent domain switching.
△ Less
Submitted 14 November, 2017;
originally announced November 2017.
-
Image Segmentation of Multi-Shaped Overlapping Objects
Authors:
Kumar Abhinav,
Jaideep Singh Chauhan,
Debasis Sarkar
Abstract:
In this work, we propose a new segmentation algorithm for images containing convex objects present in multiple shapes with a high degree of overlap. The proposed algorithm is carried out in two steps, first we identify the visible contours, segment them using concave points and finally group the segments belonging to the same object. The next step is to assign a shape identity to these grouped con…
▽ More
In this work, we propose a new segmentation algorithm for images containing convex objects present in multiple shapes with a high degree of overlap. The proposed algorithm is carried out in two steps, first we identify the visible contours, segment them using concave points and finally group the segments belonging to the same object. The next step is to assign a shape identity to these grouped contour segments. For images containing objects in multiple shapes we begin first by identifying shape classes of the contours followed by assigning a shape entity to these classes. We provide a comprehensive experimentation of our algorithm on two crystal image datasets. One dataset comprises of images containing objects in multiple shapes overlapping each other and the other dataset contains standard images with objects present in a single shape. We test our algorithm against two baselines, with our proposed algorithm outperforming both the baselines.
△ Less
Submitted 6 November, 2017;
originally announced November 2017.
-
Imaging current-induced switching of antiferromagnetic domains in CuMnAs
Authors:
M. J. Grzybowski,
P. Wadley,
K. W. Edmonds,
R. Beardsley,
V. Hills,
R. P. Campion,
B. L. Gallagher,
J. S. Chauhan,
V. Novak,
T. Jungwirth,
F. Maccherozzi,
S. S. Dhesi
Abstract:
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current…
▽ More
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current can induce reproducible and reversible modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. The current-induced domain switching is inhomogeneous at the submicron level. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated.
△ Less
Submitted 1 February, 2017; v1 submitted 28 July, 2016;
originally announced July 2016.
-
Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism
Authors:
P. Wadley,
A. A. Freeman,
K. W. Edmonds,
G. van der Laan,
J. S. Chauhan,
R. P. Campion,
A. W. Rushforth,
B. L. Gallagher,
C. T. Foxon,
F. Wilhelm,
A. G. Smekhova,
A. Rogalev
Abstract:
Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is mor…
▽ More
Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.
△ Less
Submitted 25 May, 2010;
originally announced May 2010.
