Showing 1–2 of 2 results for author: Charmant, J P H

Correlation between $T_c$ and anisotropic scattering in Tl$_2$Ba$_2$CuO$_{6+δ}$

Authors: M. Abdel-Jawad, J. G. Analytis, L. Balicas, A. Carrington, J. P. H. Charmant, M. M. J. French, N. E. Hussey

Abstract: Angle-dependent magnetoresistance measurements are used to determine the isotropic and anisotropic components of the transport scattering rate in overdoped Tl$_2$Ba$_2$CuO$_{6+δ}$ for a range of $T_c$ values between 15K and 35K. The size of the anisotropic scattering term is found to scale linearly with $T_c$, establishing a link between the superconducting and normal state physics. Comparison w… ▽ More Angle-dependent magnetoresistance measurements are used to determine the isotropic and anisotropic components of the transport scattering rate in overdoped Tl$_2$Ba$_2$CuO$_{6+δ}$ for a range of $T_c$ values between 15K and 35K. The size of the anisotropic scattering term is found to scale linearly with $T_c$, establishing a link between the superconducting and normal state physics. Comparison with results from angle resolved photoemission spectroscopy indicates that the transport and quasiparticle lifetimes are distinct. △ Less

Submitted 15 August, 2007; originally announced August 2007.

Comments: 5 pages, 3 figures, accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. vol. 99, 107002 (2007)

de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2

Authors: A. Carrington, J. D. Fletcher, J. R. Cooper, O. J. Taylor, L. Balicas, N. D. Zhigadlo, S. M. Kazakov, J. Karpinski, J. P. H. Charmant, J. Kortus

Abstract: We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface.… ▽ More We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger $σ$ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant $λ$. These observations are compared with band structure calculations, and found to be in excellent agreement. △ Less

Submitted 14 July, 2005; v1 submitted 26 April, 2005; originally announced April 2005.

Comments: 4 pages with figures

Journal ref: Phys. Rev. B 72, 060507(R) (2005)