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Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments
Authors:
Sreejith Pallikkara Chandrasekharan,
Sofia Apergi,
Chen Wei,
Federico Panciera,
Laurent Travers,
Gilles Patriarche,
Jean-Christophe Harmand,
Laurent Pedesseau,
Charles Cornet
Abstract:
Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material. This method uses both reconstructed surface and interface absolute energies, as determined by density functional theory, to infer the morphology and wetting properties of Volmer-Weber islands over the whole range of acc…
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Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material. This method uses both reconstructed surface and interface absolute energies, as determined by density functional theory, to infer the morphology and wetting properties of Volmer-Weber islands over the whole range of accessible chemical potentials. The predicted equilibrium shapes of GaP crystals heterogeneously grown on Si, are found to be in good agreements with experimental observations performed by Transmission Electron Microscopy. Such method provides a tool for optimization of hetero-structured, multifunctional and smart materials and devices.
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Submitted 10 June, 2025;
originally announced June 2025.
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Efficient and standardized interface energy calculations in hybrid heterostructures using fictitious atoms surface passivation
Authors:
Sreejith Pallikkara Chandrasekharan,
Sofia Apergi,
Charles Cornet,
Laurent Pedesseau
Abstract:
Heterostructures combining diverse physico-chemical properties are increasingly in demand for a wide range of applications in modern science and technology. However, despite their importance in materials science, accurately determining absolute interface energies remains a major challenge. This difficulty arises from periodic boundary conditions, high computational costs of plane-wave methods, mul…
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Heterostructures combining diverse physico-chemical properties are increasingly in demand for a wide range of applications in modern science and technology. However, despite their importance in materials science, accurately determining absolute interface energies remains a major challenge. This difficulty arises from periodic boundary conditions, high computational costs of plane-wave methods, multipolar interactions in heterostructures, the need for thick slabs for interface convergence, and reconstructed surfaces on both slab faces. Here, we introduce a standardized and computationally efficient fictitious H* charge passivation method for the surface termination, designed to accurately determine absolute interface energies in heterogeneous materials associations. This approach effectively addresses issues associated with surface reconstructions while significantly reducing computational costs within the framework of density functional theory. To demonstrate its reliability, we calculate the absolute interface energies for various quasi-lattice-matched and lattice-mismatched abrupt III-V/Si interfaces using the H* passivation technique and benchmark the results against those obtained using conventional reconstructed surface methods. We further explore the early stages of strained epitaxial GaAs on Si(001). Finally, we assess the fictitious H* passivation method, showing its effectiveness in minimizing electric dipole errors, reducing computational costs, and thus decreasing greenhouse gas emissions from high-performance computing. Finally, the potential of the approach to compute interface energies across a broad spectrum of materials is emphasized.
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Submitted 4 June, 2025;
originally announced June 2025.
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Computational assessment of non-polar and polar GaP terminations for photoelectrochemical water splitting
Authors:
Sofia Apergi,
Sreejith Pallikkara Chandrasekharan,
Charles Cornet,
Laurent Pedesseau
Abstract:
With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a well-established semiconductor with suitable band edge positions that has already been successfully employed in photoelectrochemical solar cells. However, to utilize it as e…
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With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a well-established semiconductor with suitable band edge positions that has already been successfully employed in photoelectrochemical solar cells. However, to utilize it as efficiently as possible, a proper understanding of its properties when interfaced with water is required, and this is currently lacking. In this work we use ab initio molecular dynamics simulations to study the properties of the aqueous interfaces of various GaP non-polar (110) and polar (001) terminations. We calculate their band alignment with respect to the standard hydrogen electrode potential and investigate their interfacial structural properties. Based on these properties we assess the capability of the various terminations to catalyze the reactions associated with water splitting and propose approaches for improving the performance of GaP for application in PECs.
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Submitted 6 May, 2025;
originally announced May 2025.
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Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step
Authors:
D. Gupta,
S. Pallikkara Chandrasekharan,
S. Thébaud,
C. Cornet,
L. Pedesseau
Abstract:
Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces, using density functional theory. Thermodynamic stability of the different heterostructures is analyzed with an atomic scale description of charge densities distribution and mechani-cal strain. We show that the configurat…
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Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces, using density functional theory. Thermodynamic stability of the different heterostructures is analyzed with an atomic scale description of charge densities distribution and mechani-cal strain. We show that the configuration where a III-V crystal adapts to a Si monoatomic step through change of charge compensation at the hetero-interface is much more stable than the configuration in which an antiphase boundary is formed. This study thus demonstrates that antiphase boundaries commonly observed in III-V/Si samples are not origi-nating from Si monoatomic step edges but from inevitable kinetically driven coalescence of monophase 3D III-V islands.
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Submitted 13 June, 2024;
originally announced June 2024.
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Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
Authors:
S. Pallikkara Chandrasekharan,
D. Gupta,
C. Cornet,
L. Pedesseau
Abstract:
Here, we quantitatively estimate the impact of the inevitable Si surface passivation prior to III-V/Si hetero-epitaxy on the surface energy of the Si initial substrate, and explore its consequences for the description of wetting properties. Density Functional Theory is used to determine absolute surface energies of P- and Ga-passivated Si surfaces and their dependencies with the chemical potential…
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Here, we quantitatively estimate the impact of the inevitable Si surface passivation prior to III-V/Si hetero-epitaxy on the surface energy of the Si initial substrate, and explore its consequences for the description of wetting properties. Density Functional Theory is used to determine absolute surface energies of P- and Ga-passivated Si surfaces and their dependencies with the chemical potential. Especially, we show that, while a ~90 meV/$Å^2$ surface energy is usually considered for the nude Si surface, surface passivation by Ga- or P- atoms leads to a strong stabilization of the surface, with a surface energy in the [50-75 meV/$Å^2$] range. The all-ab initio analysis of the wetting properties indicate that a complete wetting situation would become possible only if the initial passivated Si surface could be destabilized by at least 15 meV/$Å^2$ or if the III-V (001) surface could be stabilized by the same amount.
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Submitted 3 December, 2023;
originally announced December 2023.
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Determination of III-V/Si absolute interface energies: impact on wetting properties
Authors:
S. Pallikkara Chandrasekharan,
I. Lucci,
D. Gupta,
C. Cornet,
L. Pedesseau
Abstract:
Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the wetting properties of the system. Based on a description at the atomic scale using density functional theory, we first show that it is possible to determine the absolute interface energies in heterogeneous materials systems. A large variety of absolute GaP surface energies and GaP/Si interface energies a…
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Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the wetting properties of the system. Based on a description at the atomic scale using density functional theory, we first show that it is possible to determine the absolute interface energies in heterogeneous materials systems. A large variety of absolute GaP surface energies and GaP/Si interface energies are then computed, confirming the large stability of charge compensated III-V/Si interfaces with an energy as low as 23 meV/Å$^{2}$. While stable compensated III-V/Si interfaces are expected to promote complete wetting conditions, it is found that this can be easily counterbalanced by the substrate initial passivation, which favors partial wetting conditions.
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Submitted 17 August, 2023; v1 submitted 27 March, 2023;
originally announced March 2023.
