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Emission and Coherent Control of Levitons in Graphene
Authors:
A. Assouline,
L. Pugliese,
H. Chakraborti,
Seunghun Lee,
L. Bernabeu,
M. Jo,
K. Watanabe,
T. Taniguchi,
D. C. Glattli,
N. Kumada,
H. -S. Sim,
F. D. Parmentier,
P. Roulleau
Abstract:
Flying qubits encode quantum information in propagating modes instead of stationary discrete states. Although photonic flying qubits are available, the weak interaction between photons limits the efficiency of conditional quantum gates. Conversely, electronic flying qubits can use Coulomb interactions, but the weaker quantum coherence in conventional semiconductors has hindered their realization.…
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Flying qubits encode quantum information in propagating modes instead of stationary discrete states. Although photonic flying qubits are available, the weak interaction between photons limits the efficiency of conditional quantum gates. Conversely, electronic flying qubits can use Coulomb interactions, but the weaker quantum coherence in conventional semiconductors has hindered their realization. In this work, we engineered on-demand injection of a single electronic flying qubit state and its manipulation over the Bloch sphere. The flying qubit is a Leviton propagating in quantum Hall edge channels of a high-mobility graphene monolayer. Although single-shot qubit readout and two-qubit operations are still needed for a viable manipulation of flying qubits, the coherent manipulation of an itinerant electronic state at the single-electron level presents a highly promising alternative to conventional qubits.
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Submitted 13 December, 2024;
originally announced December 2024.
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Gate voltage modulation of the superconducting state in a degenerate semiconductor
Authors:
Bikash C. Barik,
Himadri Chakraborti,
Buddhadeb Pal,
Aditya K. Jain,
Swagata Bhunia,
Sounak Samanta,
Apurba Laha,
Suddhasatta Mahapatra,
K. Das Gupta
Abstract:
In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesti…
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In this work, we demonstrate that the modulation of carrier density can alter the superconducting transition temperature by up to $204$ mK in epitaxial Indium Nitride on Gallium Nitride, accounting for the $10$% of the transition temperature in ungated conditions. Our samples are likely free from strong localization effects and significant granularity, as indicated by $( k_{f l} \gg 1 )$, suggesting that the primary determinant of the transition temperature in InN is carrier density, rather than disorder scattering. The observed behavior is consistent with BCS s-wave superconductivity, corroborated by the superconducting parameters we measured. Furthermore, we observed a $60$% bipolar suppression of the supercurrent in our experiments.
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Submitted 13 June, 2024;
originally announced June 2024.
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Low frequency resistance fluctuations in an ionic liquid gated channel probed by cross-correlation noise spectroscopy
Authors:
Bikash C. Barik,
Himadri Chakraborti,
Aditya K. Jain,
Buddhadeb Pal,
H. E. Beere,
D. A. Ritchie,
K. Das Gupta
Abstract:
A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance…
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A system in equilibrium keeps ``exploring" nearby states in the phase space and consequently, fluctuations can contain information, that the mean value does not. However, such measurements involve a fairly complex interplay of effects arising in the device and measurement electronics, that are non-trivial to disentangle. In this paper, we briefly analyse some of these issues and show the relevance of a two-amplifier cross-correlation technique for semiconductors and thin films commonly encountered. We show that by using home-built amplifiers costing less than $10$ USD/piece one can measure spectral densities as low as $\sim 10^{-18}-10^{-19}~ {\rm {V^2}{Hz^{-1}}}$. We apply this method to an ionic liquid gated Ga:ZnO channel and show that the glass transition of the ionic liquid brings about a change in the exponent of the low frequency resistance fluctuations. Our analysis suggests that a log-normal distribution of the Debye relaxation times of the fluctuations and an increased weight of the long timescale relaxations can give a semi-quantitative explanation of the observed change in the exponent.
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Submitted 20 February, 2024;
originally announced February 2024.
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Electron quantum optics in graphene
Authors:
Himadri Chakraborti,
Cosimo Gorini,
Angelika Knothe,
Ming-Hao Liu,
Péter Makk,
Francois D. Parmentier,
David Perconte,
Klaus Richter,
Preden Roulleau,
Benjamin Sacépé,
Christian Schönenberger,
Wenmin Yang
Abstract:
In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivia…
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In the last decade, graphene has become an exciting platform for electron optical experiments, in many aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics, which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, \eg, snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.
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Submitted 8 January, 2024;
originally announced January 2024.
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Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures
Authors:
Himadri Chakraborti,
Bhanu P Joshi,
Chanchal K. Barman,
Aditya K. Jain,
Buddhadeb Pal,
Bikash C. Barik,
Tanmay Maiti,
Rüdiger Schott,
M. J. N. V. Prasad,
S. Dhar,
Hridis K. Pal,
Aftab Alam,
K. Das Gupta
Abstract:
A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interestin…
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A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.
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Submitted 30 March, 2022; v1 submitted 17 March, 2021;
originally announced March 2021.
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Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation
Authors:
Swarup Deb,
Pritam Bhattacharyya,
Poulab Chakrabarti,
Himadri Chakraborti,
Kantimay Das Gupta,
Alok Shukla,
Subhabrata Dhar
Abstract:
Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of mag…
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Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.
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Submitted 7 March, 2020;
originally announced March 2020.
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Magnetization reversal of dipolar coupled nanomagnets studied by two-dimensional electron gas based micro-Hall magnetometry
Authors:
N. Keswani,
Y. Nakajima,
N. Chauhan,
H. Chakraborti,
K. Dasgupta,
S. Kumar,
Y. Ohno,
H. Ohno,
P. Das
Abstract:
We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double ring-like geometry. We observe that although magnetic force microscopy images exhibit single domain like magnetic states for the nanostructures, their reversal processes may undergo complex behavior. The…
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We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double ring-like geometry. We observe that although magnetic force microscopy images exhibit single domain like magnetic states for the nanostructures, their reversal processes may undergo complex behavior. The details of such reversal behavior is observed as specific features in micro-Hall magnetometry data which compares well with the micromagnetic simulation data.
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Submitted 30 December, 2019;
originally announced December 2019.
