Role of native point defects and Hg impurities in the electronic properties of Bi$_4$I$_4$
Authors:
Gustavo H. Cassemiro,
C. David Hinostroza,
Leandro Rodrigues de Faria,
Daniel A. Mayoh,
Maria C. O. Aguiar,
Martin R. Lees,
Geetha Balakrishnan,
J. Larrea Jiménez,
Antonio Jefferson da Silva Machado,
Valentina Martelli,
Walber H. Brito
Abstract:
We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi$_4$I$_4$). Our transport measurements after annealing at different temperatures show that the resistivity of Bi$_4$I$_4$ depends on its thermal history, suggesting that the formation of native defects and impurities can shape the temperature dependence of electrical resistivity. Our density…
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We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi$_4$I$_4$). Our transport measurements after annealing at different temperatures show that the resistivity of Bi$_4$I$_4$ depends on its thermal history, suggesting that the formation of native defects and impurities can shape the temperature dependence of electrical resistivity. Our density functional theory calculations indicate that the bismuth and iodine antisites, and bismuth vacancies are the dominant native point defects. We find that bismuth antisites introduce resonant states in the band-edges, while iodine antisites and bismuth vacancies lead to a $n$-type and $p$-type doping of Bi$_4$I$_4$, respectively. The Hg impurities are likely to be found at Bi substitutional sites, giving rise to the $p$-type doping of Bi$_4$I$_4$. Overall, our findings indicate that the presence of native point defects and impurities can significantly modify the electronic properties, and, thus, impact the resistivity profile of Bi$_4$I$_4$ due to modifications in the amount and type of carriers, and the associated defect(impurity) scattering. Our results suggest possible routes for pursuing fine-tuning of the electronic properties of quasi-one-dimensional quantum materials.
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Submitted 23 October, 2024;
originally announced October 2024.
Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$
Authors:
C. David Hinostroza,
Leandro Rodrigues de Faria,
Gustavo H. Cassemiro,
J. Larrea Jiménez,
Antonio Jefferson da Silva Machado,
Walber H. Brito,
Valentina Martelli
Abstract:
The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $β$ phase ($T>T_P$) from a low-temperature $α$ phase ($T<T_P$). $α$ and $β$ phases are suggested to host electronic band structures with distinct topological classifications. Rapid quenching was reported to stabilize a metastable $β$-Bi$_4$I$_4$ at $T<T_P$, making possible a c…
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The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $β$ phase ($T>T_P$) from a low-temperature $α$ phase ($T<T_P$). $α$ and $β$ phases are suggested to host electronic band structures with distinct topological classifications. Rapid quenching was reported to stabilize a metastable $β$-Bi$_4$I$_4$ at $T<T_P$, making possible a comparative study of the physical properties of the two phases in the same low-temperature range. In this work, we present a structural investigation of the Bi$_4$I$_4$ before and after quenching together with electrical resistivity measurements. We found that rapid cooling does not consistently lead to a metastable $β$-Bi$_4$I$_4$, and a quick transition to $α$-Bi$_4$I$_4$ is observed. As a result, the comparison of putative signatures of different topologies attributed to a specific structural phase should be carefully considered. The observed phase instability is accompanied by an increase in iodine vacancies and by a change in the temperature dependence of electrical resistivity, pointing to native defects as a possible origin of our finding. Density functional theory (DFT) calculations support the scenario that iodine vacancies, together with bismuth antisites and interstitials, are among the defects that are more likely to occur in Bi$_4$I$_4$ during the growth.
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Submitted 24 April, 2024;
originally announced April 2024.
