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Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs
Authors:
M. Micica,
A. Wright,
S. Massabeau,
S. Ayari,
E. Rongione,
M. Oliveira Ribeiro,
S. Husain,
T. Denneulin,
R. Dunin-Borkowsk,
J. Tignon,
J. Mangeney,
R. Lebrun,
H. Okuno,
O. Boulle,
A. Marty,
F. Bonell,
F. Carosella,
H. Jaffres,
R. Ferreira,
J-M. George,
M. Jamet,
S. Dhillon
Abstract:
Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently…
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Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in a single layered device through an infinitely diverse set of quantum materials. However, most efforts have only focused on exfoliated material that inherently limits both the dimensions of the materials and the scalability for applications. Here, we show the epitaxial growth of large area heterostructures of topological insulators (Bi2Se3), transition metal dichalcogenides (TMDs, WSe2) and ferromagnets (Co), resulting in the combination of functionalities including tuneable optical nonlinearities, spin-to-charge conversion and magnetic proximity effects. This is demonstrated through coherent phase resolved terahertz currents, bringing novel functionalities beyond those achievable in simple homostructures. In particular, we show the role of different TMD polymorphs, with the simple change of one atomic monolayer of the artificial material stack entirely changing its optical, electrical and magnetic properties. This epitaxial integration of diverse two-dimensional materials offers foundational steps towards diverse perspectives in quantum material engineering, where the material polymorph can be controlled at technological relevant scales for coupling applications in, for example, van der Waals nonlinear optics, optoelectronics, spintronics, multiferroics and coherent current control.
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Submitted 7 January, 2025;
originally announced January 2025.
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The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions
Authors:
Marin Tharrault,
Sabrine Ayari,
Mehdi Arfaoui,
Eva Desgué,
Romaric Le Goff,
Pascal Morfin,
José Palomo,
Michael Rosticher,
Sihem Jaziri,
Bernard Plaçais,
Pierre Legagneux,
Francesca Carosella,
Christophe Voisin,
Robson Ferreira,
Emmanuel Baudin
Abstract:
$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove inst…
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$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption.
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Submitted 7 August, 2024; v1 submitted 3 November, 2023;
originally announced November 2023.
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Atomic Layer-controlled Nonlinear Terahertz Valleytronics in Dirac Semi-metal and Semiconductor PtSe2
Authors:
Minoosh Hemmat,
Sabrine Ayari,
Martin Micica,
Hadrien Vergnet,
Guo Shasha,
Mehdi Arfaoui,
Xuechao Yu,
Daniel Vala,
Adrien Wright,
Kamil Postava,
Juliette Mangeney,
Francesca Carosella,
Sihem Jaziri,
Qi Jie Wang,
Liu Zheng,
Jerome Tignon,
Robson Ferreira,
Emmanuel Baudin,
Sukhdeep Dhillon
Abstract:
Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a c…
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Platinum diselenide (PtSe2) is a promising two-dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near-infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer-engineered. Here, we demonstrate that a controlled THz nonlinearity - tuned from monolayer to bulk PtSe2 - can be realised in wafer size polycrystalline PtSe2 through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the PtSe2 layer interaction with the substrate for a broken material centro-symmetry permitting a second order nonlinearity. Further, we show layer-dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering is highlighted through detailed DFT simulations and show that circular dichroism can be controlled when PtSe2 becomes a semimetal and when the K-valleys can be excited. As well as showing that PtSe2 is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation.
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Submitted 4 April, 2023;
originally announced April 2023.
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Free carrier absorption in cascade structures due to static scatterers in the in-plane polarization
Authors:
Camille Ndebeka-Bandou,
Francesca Carosella,
Robson Ferreira,
Gérald Bastard
Abstract:
We report on the computation of the free carrier absorption induced by static scatterers in cascade structures when the electromagnetic wave propagates along the growth axis. We find that a Drude-like tail exists for this polarization. The absorption is found larger than when the wave propagates in the layer plane. Also intra-subband scattering is found more efficient than inter-subband scattering…
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We report on the computation of the free carrier absorption induced by static scatterers in cascade structures when the electromagnetic wave propagates along the growth axis. We find that a Drude-like tail exists for this polarization. The absorption is found larger than when the wave propagates in the layer plane. Also intra-subband scattering is found more efficient than inter-subband scattering. The alloy scattering is found to be particularly efficient.
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Submitted 13 December, 2013;
originally announced December 2013.
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One dimensional massless Dirac bands in semiconductor superlattices
Authors:
Francesca Carosella,
Andreas Wacker,
Robson Ferreira,
Gérald Bastard
Abstract:
Semiconductor superlattices may display dispersions that are degenerate either at the zone center or zone boundary. We show that they are linear upon the wave-vector in the vicinity of the crossing point. This establishes a realisation of massless Dirac bands within semiconductor materials. We show that the eigenstates and the corresponding Wannier functions of these superlattices have peculiar sy…
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Semiconductor superlattices may display dispersions that are degenerate either at the zone center or zone boundary. We show that they are linear upon the wave-vector in the vicinity of the crossing point. This establishes a realisation of massless Dirac bands within semiconductor materials. We show that the eigenstates and the corresponding Wannier functions of these superlattices have peculiar symmetry properties. We discuss the stability of the properties of such superlattices versus the electron in-plane motion. As a distinct fingerprint, the inter-subband magneto-absorption spectrum for such superlattices is discussed.
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Submitted 13 February, 2014; v1 submitted 31 October, 2013;
originally announced November 2013.
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Relevance of intra- and inter-subband scattering on the absorption in heterostructures
Authors:
Camille NDebeka-Bandou,
Francesca Carosella,
Robson Ferreira,
Andreas Wacker,
Gérald Bastard
Abstract:
We analyze the absorption lineshape for inter-subband transitions in disordered quasi 2D heterostructures by an exact calculation. The intra-subband scatterings control the central peak while the tails of the absorption line are dominated by the inter-subband scattering terms. Our numerical study quantitatively assesses the magnitude of the free carrier absorption. The accuracy of different models…
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We analyze the absorption lineshape for inter-subband transitions in disordered quasi 2D heterostructures by an exact calculation. The intra-subband scatterings control the central peak while the tails of the absorption line are dominated by the inter-subband scattering terms. Our numerical study quantitatively assesses the magnitude of the free carrier absorption. The accuracy of different models currently used for gain/absorption is discussed.
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Submitted 25 October, 2012; v1 submitted 31 July, 2012;
originally announced July 2012.
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Free carrier absorption in quantum cascade structures
Authors:
F. Carosella,
C. Ndebeka-Bandou,
R. Ferreira,
E. Dupont,
K. Unterrainer,
G. Strasser,
A. Wacker,
G. Bastard
Abstract:
We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field of the laser emission. A quantum mechanical calculation of the free carrier absorption and inter-subband oblique absorption induced by interface defects, coulo…
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We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field of the laser emission. A quantum mechanical calculation of the free carrier absorption and inter-subband oblique absorption induced by interface defects, coulombic impurities and optical phonon absorption/emission is presented for QCL's with a double quantum well design. The interaction between the electrons and the optical phonons dominates at room temperature.
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Submitted 8 December, 2011;
originally announced December 2011.
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Unraveling of free carrier absorption for terahertz radiation in heterostructures
Authors:
Andreas Wacker,
Gerald Bastard,
Francesca Carosella,
Robson Ferreira,
Emmanuel Dupont
Abstract:
The relation between free carrier absorption and intersubband transitions in semiconductor heterostructures is resolved by comparing a sequence of structures. Our numerical and analytical results show how free carrier absorption evolves from the intersubband transitions in the limit of an infinite number of wells with vanishing barrier width. It is explicitly shown that the integral of the absorpt…
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The relation between free carrier absorption and intersubband transitions in semiconductor heterostructures is resolved by comparing a sequence of structures. Our numerical and analytical results show how free carrier absorption evolves from the intersubband transitions in the limit of an infinite number of wells with vanishing barrier width. It is explicitly shown that the integral of the absorption over frequency matches the value obtained by the f-sum rule. This shows that a proper treatment of intersubband transitions is fully sufficient to simulate the entire electronic absorption in heterostructure THz devices.
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Submitted 3 November, 2011; v1 submitted 21 September, 2011;
originally announced September 2011.
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Magnetic field control of intersubband polaritons in narrow-gap semiconductors
Authors:
Giovanni Pizzi,
Francesca Carosella,
Gérald Bastard,
Robson Ferreira
Abstract:
We investigate theoretically the polariton coupling between the light confined in a planar cavity and the intersubband transitions of a two-dimensional electron gas confined in semiconductor quantum wells in the presence of a vertical magnetic field. We show that in heterostructures made of non-parabolic semiconductors, the polaritons do not fit a two-level problem, since the cavity photons couple…
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We investigate theoretically the polariton coupling between the light confined in a planar cavity and the intersubband transitions of a two-dimensional electron gas confined in semiconductor quantum wells in the presence of a vertical magnetic field. We show that in heterostructures made of non-parabolic semiconductors, the polaritons do not fit a two-level problem, since the cavity photons couple to a non-degenerate ensemble of intersubband transitions. As a consequence, the stationary polariton eigenstates become very sensitive to the vertical magnetic field, which thus plays the role of an external parameter that controls the regime of light-matter interactions. At intermediate field strength we predict that the magneto-polaritons have energy dispersions ideally suited to parametric amplification.
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Submitted 12 May, 2011; v1 submitted 19 February, 2011;
originally announced February 2011.
