Showing 1–14 of 14 results for author: Burke, A M

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Authors: J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

Abstract: We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control… ▽ More We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Comments: Submitted to Nanotechnology

Thermoelectric characterization of the Kondo resonance in nanowire quantum dots

Authors: Artis Svilans, Martin Josefsson, Adam M. Burke, Sofia Fahlvik, Claes Thelander, Heiner Linke, Martin Leijnse

Abstract: We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data… ▽ More We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data of very high quality both below and above the Kondo temperature, and allows a quantitative comparison with theoretical predictions. Specifically, we verify that Kondo correlations can induce a polarity change of the thermoelectric current, which can be reversed either by increasing the temperature or by applying a magnetic field. △ Less

Submitted 20 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Lett. 121, 206801 (2018)

A quantum-dot heat engine operating close to the thermodynamic efficiency limits

Authors: Martin Josefsson, Artis Svilans, Adam M. Burke, Eric A. Hoffmann, Sofia Fahlvik, Claes Thelander, Martin Leijnse, Heiner Linke

Abstract: Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suita… ▽ More Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suitable for low-power applications and miniaturization. It was predicted that PE engines could reach the same thermodynamically ideal efficiency limits as those accessible to cyclical engines, but this prediction has not been verified experimentally. Here, we demonstrate a PE heat engine based on a quantum dot (QD) embedded into a semiconductor nanowire. We directly measure the engine's steady-state electric power output and combine it with the calculated electronic heat flow to determine the electronic efficiency $η$. We find that at the maximum power conditions, $η$ is in agreement with the Curzon-Ahlborn efficiency and that the overall maximum $η$ is in excess of 70$\%$ of the Carnot efficiency while maintaining a finite power output. Our results demonstrate that thermoelectric power conversion can, in principle, be achieved close to the thermodynamic limits, with direct relevance for future hot-carrier photovoltaics, on-chip coolers or energy harvesters for quantum technologies. △ Less

Submitted 17 July, 2018; v1 submitted 2 October, 2017; originally announced October 2017.

Journal ref: Nature Nanotechnology 13, 920-924 (2018)

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

Authors: D. J. Carrad, A. B. Mostert, A. R. Ullah, A. M. Burke, H. J. Joyce, H. H. Tan, C. Jagadish, P. Krogstrup, J. Nygård, P. Meredith, A. P. Micolich

Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly… ▽ More A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry. △ Less

Submitted 29 April, 2017; originally announced May 2017.

Journal ref: Nano Letters 17, 827-833 (2017)

Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

Authors: Artis Svilans, Adam M. Burke, Sofia Fahlvik Svensson, Martin Leijnse, Heiner Linke

Abstract: Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been cha… ▽ More Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot. △ Less

Submitted 28 October, 2015; originally announced October 2015.

Comments: Cite as: A. Svilans, et al., Physica E (2015), http://dx.doi.org/10.1016/j.physe.2015.10.007

Journal ref: Physica E 82 (2015) 34-38

InAs nanowire transistors with multiple, independent wrap-gate segments

Authors: A. M. Burke, D. J. Carrad, J. G. Gluschke, K. Storm, S. Fahlvik Svensson, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabri… ▽ More We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 18 pages, 5 figures, In press for Nano Letters (DOI below)

Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

Authors: Sofia Fahlvik Svensson, Adam M. Burke, Damon J. Carrad, Martin Leijnse, Heiner Linke, Adam P. Micolich

Abstract: We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and… ▽ More We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Comments: Published in Advanced Functional Materials. Includes colour versions of figures and supplementary information

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

Authors: D. J. Carrad, A. M. Burke, O. Klochan, A. M. See, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si accept… ▽ More We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices. △ Less

Submitted 7 April, 2014; v1 submitted 5 December, 2013; originally announced December 2013.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Comments: Submitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Authors: D. J. Carrad, A. M. Burke, P. J. Reece, R. W. Lyttleton, D. E. J. Waddington, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in pho… ▽ More We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface. △ Less

Submitted 8 July, 2013; v1 submitted 4 December, 2012; originally announced December 2012.

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices

Authors: A. M. Burke, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton, A. P. Micolich

Abstract: Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* val… ▽ More Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs, and approaching that in InGaAs/InP QPCs. We show that g* is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g* desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature. △ Less

Submitted 23 August, 2012; originally announced August 2012.

Comments: 23 pages, 7 figures

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Authors: A. M. See, I. Pilgrim, B. C. Scannell, R. D. Montgomery, O. Klochan, A. M. Burke, M. Aagesen, P. E. Lindelof, I. Farrer, D. A. Ritchie, R. P. Taylor, A. R. Hamilton, A. P. Micolich

Abstract: Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and tha… ▽ More Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots. △ Less

Submitted 31 March, 2012; originally announced April 2012.

Comments: In press for Phys. Rev. Lett

Journal ref: Physical Review Letters 108, 196807 (2012)