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Laser-Induced Gas-Phase Transfer and Direct Stamping of Nanomaterials: Comparison of Nanosecond and Femtosecond Pulses
Authors:
Nathan T. Goodfriend,
Inam Mirza,
Alexander V. Bulgakov,
Eleanor E. B. Campbell,
Nadezhda M. Bulgakova
Abstract:
The two-dimensional nanomaterial, hexagonal boron nitride (hBN) was cleanly transferred via a blister-based laser-induced forward-transfer method. The transfer was performed utilizing femtosecond and nanosecond laser pulses for separation distances of ~16 and ~200 micrometers between a titanium donor film deposited on a glass substrate and a silicon/silicon dioxide receiver. Transfer efficiency wa…
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The two-dimensional nanomaterial, hexagonal boron nitride (hBN) was cleanly transferred via a blister-based laser-induced forward-transfer method. The transfer was performed utilizing femtosecond and nanosecond laser pulses for separation distances of ~16 and ~200 micrometers between a titanium donor film deposited on a glass substrate and a silicon/silicon dioxide receiver. Transfer efficiency was examined for isolated laser pulses as well as for series of overlapping pulses and single layer transfer was confirmed. It was found that hBN is transferable for all tested combinations of pulse duration and transfer distances. The results indicate that transfer proceeds via direct stamping for short donor-to-receiver distances while, for the larger distance, the material is ejected from the donor and lands on the receiver. Furthermore, with overlapping pulses, nanosecond laser pulses enable a successful printing of hBN lines while, for fs laser pulses, the Ti film can be locally disrupted by multiple pulses and molten titanium may be transferred along with the hBN flakes. For reproducibility, and to avoid contamination with metal deposits, low laser fluence transfer with ns pulses and transfer distances smaller than the blister height provide the most favourable and reproducible condition.
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Submitted 26 December, 2024; v1 submitted 12 December, 2024;
originally announced December 2024.
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Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations
Authors:
Inam Mirza,
Juraj Sládek,
Yoann Levy,
Alexander V. Bulgakov,
Vasilis Dimitriou,
Helen Papadaki,
Evaggelos Kaselouris,
Paulius Gecys,
Gediminas Račiukaitis,
Nadezhda M. Bulgakova
Abstract:
Using different laser irradiation patterns to modify of silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shift…
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Using different laser irradiation patterns to modify of silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, - surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, - providing conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.
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Submitted 3 December, 2024; v1 submitted 18 November, 2024;
originally announced November 2024.
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Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon
Authors:
Alexander V. Bulgakov,
Juraj Sládek,
Jan Hrabovský,
Inam Mirza,
Wladimir Marine,
Nadezhda M. Bulgakova
Abstract:
A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are co…
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A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.
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Submitted 24 February, 2024;
originally announced February 2024.
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On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
Authors:
J. Beranek,
A. V. Bulgakov,
N. M. Bulgakova
Abstract:
In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental da…
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In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established which enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).
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Submitted 5 January, 2023;
originally announced January 2023.
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Melting of gold by ultrashort laser pulses: Advanced two-temperature modeling and comparison with surface damage experiments
Authors:
Sergey A. Lizunov,
Alexander V. Bulgakov,
Eleanor E. B. Campbell,
Nadezhda M. Bulgakova
Abstract:
The ultrafast laser-induced solid-liquid phase transition in metals is still not clearly understood and its accurate quantitative description remains a challenge. Here we systematically investigated, both experimentally and theoretically, the melting of gold by single femto- and picosecond near-infrared laser pulses. Two laser systems with wavelengths of 800 and 1030 nm and pulse durations ranging…
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The ultrafast laser-induced solid-liquid phase transition in metals is still not clearly understood and its accurate quantitative description remains a challenge. Here we systematically investigated, both experimentally and theoretically, the melting of gold by single femto- and picosecond near-infrared laser pulses. Two laser systems with wavelengths of 800 and 1030 nm and pulse durations ranging from 124 fs to 7 ps were used and the damage and ablation thresholds were determined for each irradiation condition. The theoretical analysis was based on two-temperature modeling. Different expressions for the electron-lattice coupling rate and contribution of ballistic electrons were examined. In addition, the number of free electrons involved in the optical response is suggested to be dependent on the laser intensity and the influence of the fraction of involved electrons on the damage threshold was investigated. Only one combination of modelling parameters was able to describe consistently all the measured damage thresholds. Physical arguments are presented to explain the modeling results.
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Submitted 1 May, 2022;
originally announced May 2022.
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Production of Gas Phase Zinc Oxide Nanoclusters by Pulsed Laser Ablation
Authors:
Igor Ozerov,
Alexander V. Bulgakov,
Dmitry K. Nelson,
Ricardo Castell,
Wladimir Marine
Abstract:
We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the…
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We present experimental results on the photoluminescence (PL) of gas-suspended zinc oxide nanoclusters prepared during ablation of sintered ZnO targets by a pulsed ArF laser in the presence of oxygen ambient gas. The PL spectra in the UV spectral region correspond to the exciton recombination in the nanoclusters which are crystallized and cooled down to the temperature of the ambient gas in the ablation chamber. The time evolution of the spectra as well as their dependence on the ambient gas pressure are discussed.
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Submitted 10 June, 2004;
originally announced June 2004.
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Phosphorus cluster production by laser ablation
Authors:
A. V. Bulgakov,
O. F. Bobrenok,
Igor Ozerov,
W. Marine,
S. Giorgio,
A. Lassesson,
E. E. B. Campbell
Abstract:
Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_2…
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Neutral and charged phosphorus clusters of a wide size range have been produced by pulsed laser ablation (PLA) in vacuum at 532, 337, and 193 nm ablating wavelengths and investigated by time-of-flight mass spectrometry. The neutral P_n clusters are even-numbered with local abundance maxima at n = 10 and 14, while the cationic and anionic clusters are preferentially odd-numbered with (P_7)+, (P_21)+, and (P_17)- being the most abundant ions. The dominance of the magic clusters is more pronounced at 337-nm ablation that is explained by efficient direct ejection of their building blocks under these conditions. Nanocrystalline phosphorus films have been produced by PLA in ambient helium gas.
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Submitted 5 April, 2004;
originally announced April 2004.
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Silicon clusters produced by femtosecond laser ablation: Non-thermal emission and gas-phase condensation
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Neutral silicon clusters Si_n (up to n = 7) and their cations Si_n+ (up to n = 10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-of-flight mass spectrometry. Two populations of the Si_n+ clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formati…
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Neutral silicon clusters Si_n (up to n = 7) and their cations Si_n+ (up to n = 10) have been produced by femtosecond laser ablation of bulk silicon in vacuum and investigated using time-of-flight mass spectrometry. Two populations of the Si_n+ clusters with different velocity and abundance distributions in the ablation plume have been clearly distinguished. Possible mechanisms of cluster formation (Coulomb explosion, gas-phase condensation, phase explosion) are discussed.
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Submitted 10 March, 2004;
originally announced March 2004.
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Laser ablation synthesis of zinc oxide clusters: a new family of fullerenes?
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the mo…
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Positively charged zinc oxide clusters ZnnOm (up to n = 16, m <= n) of various stoichiometry were synthesized in the gas phase by excimer ArF laser ablation of a ZnO target and investigated using time-of-flight mass spectrometry. Depending on ablation conditions, either metal rich or stoichiometric clusters dominate in the mass spectrum. When the irradiated target surface is fairly fresh, the most abundant clusters are metal rich with Zn(n+1)On and Zn(n+3)On being the major series. The stoichiometric clusters are observed with an etched ablated surface. The magic numbers at n = 9, 11 and 15 in mass spectra of (ZnO)n clusters indicate that the clusters have hollow spheroid structures related to fullerenes. A local abundance minimum at n = 13 provides an additional evidence for the presence in the ablation plume of fullerene-like (ZnO)n clusters.
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Submitted 24 November, 2003;
originally announced November 2003.
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Cluster emission under femtosecond laser ablation of silicon
Authors:
Alexander V. Bulgakov,
Igor Ozerov,
Wladimir Marine
Abstract:
Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters a…
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Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters are formed even at very low laser fluences, below ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed.
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Submitted 10 March, 2004; v1 submitted 24 November, 2003;
originally announced November 2003.
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Ablation de ZnO par laser UV (193 nm) : Nano-agregats en phase gazeuse
Authors:
Igor Ozerov,
Alexander V. Bulgakov,
Dimitri N. Nelson,
Ricardo Castell,
Marc Sentis,
Wladimir Marine
Abstract:
The condensation of zinc oxide nano clusters produced in gas phase has been evidenced in the ablation of a ZnO solid target by a pulsed ArF laser. We compare the spatio-temporal evolution of the shape of ZnO ablated plasma plume, both in vacuum and in controlled gas environments (Helium and/or Oxygen) from monitoring with CCD camera and from spectroscopic studies. The expansion of the plasma plu…
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The condensation of zinc oxide nano clusters produced in gas phase has been evidenced in the ablation of a ZnO solid target by a pulsed ArF laser. We compare the spatio-temporal evolution of the shape of ZnO ablated plasma plume, both in vacuum and in controlled gas environments (Helium and/or Oxygen) from monitoring with CCD camera and from spectroscopic studies. The expansion of the plasma plume and the growth of the nanoclusters depend strongly upon the collisions between the ablated particles and surrounding gas molecules, as well as on the chemical reactions in the case of oxygen. The spectra of the observed plasma emittion are mainly due to atomic transitions in the neutral Zn. We have also observed the photoluminescence of the nanoclusters suspended in the gas and their decomposition in the beam of ArF laser.
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Submitted 13 November, 2003;
originally announced November 2003.
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Synthesis and Laser Processing of ZnO Nanocrystalline Thin Films
Authors:
Igor Ozerov,
Dimitri Nelson,
Alexander V. Bulgakov,
Wladimir Marine,
Marc Sentis
Abstract:
We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the…
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We present the results of experiments on synthesis of ZnO nanoclusters by reactive pulsed laser deposition (PLD). The nanoclusters were formed and crystallized in the gas phase and deposited on SiO2 substrates. The nanostructured films were characterized by conventional photoluminescence (PL). The PL spectra consist of a narrow UV excitonic band and a broad visible band related to defects in the film. The film preparation conditions such as the substrate temperature, ambient gas nature and pressure, were optimized in order to increase the intensity of excitonic emission and prevent the formation of defects. A post-growth annealing by UV laser radiation improved the optical quality of the deposited films. The photoluminescence intensity was found to be dependent significantly on the laser fluence and on the number of shots per site. The nature of the defects responsible for the observed luminescence in a visible range is discussed.
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Submitted 13 November, 2003;
originally announced November 2003.
