Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies
Authors:
A. B. Mei,
H. Kindlund,
E. Broitman,
L. Hultman,
I. Petrov,
J. E. Greene,
D. G. Sangiovanni
Abstract:
High hardness and toughness are generally considered mutually exclusive properties for single-crystal ceramics. Combining experiments and ab initio molecular dynamics (AIMD) atomistic simulations at room temperature, we demonstrate that both the hardness and toughness of single-crystal NaCl-structure VNx/MgO(001) thin films are simultaneously enhanced through the incorporation of anion vacancies.…
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High hardness and toughness are generally considered mutually exclusive properties for single-crystal ceramics. Combining experiments and ab initio molecular dynamics (AIMD) atomistic simulations at room temperature, we demonstrate that both the hardness and toughness of single-crystal NaCl-structure VNx/MgO(001) thin films are simultaneously enhanced through the incorporation of anion vacancies. Nanoindentation results show that VN0.8, here considered as representative understoichiometric VNx system, is ~20% harder, as well as more resistant to fracture than stoichiometric VN samples. AIMD modeling of VN and VN0.8 supercells subjected to [001] and [110] elongation reveal that the tensile strengths of the two materials are similar. Nevertheless, while the stoichiometric VN phase systematically cleaves in a brittle manner at tensile yield points, the understoichiometric compound activates transformation-toughening mechanisms that dissipate accumulated stresses. AIMD simulations also show that VN0.8 exhibits an initially greater resistance to both {110}<1-10> and {111}<1-10> shear deformation than VN. However, for progressively increasing shear strains, the VN0.8 mechanical behavior gradually evolves from harder to more ductile than VN. The transition is mediated by anion vacancies, which facilitate {110}<1-10> and {111}<1-10> lattice slip by reducing activation shear stresses by as much as 35%. Electronic-structure analyses show that the two-regime hard/tough mechanical response of VN0.8 primarily stems from its intrinsic ability to transfer d electrons between 2nd-neighbor and 4th-neighbor (i.e., across vacancy sites) V-V metallic states. Our work offers a route for electronic-structure design of hard materials in which a plastic mechanical response is triggered with loading.
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Submitted 21 March, 2020; v1 submitted 24 January, 2020;
originally announced January 2020.
Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere
Authors:
Martin Magnuson,
Lina Tengdelius,
Fredrik Eriksson,
Mattias Samuelsson,
Esteban Broitman,
Grzegorz Greczynski,
Lars Hultman,
Hans Högberg
Abstract:
W-B-C films were deposited on Si(100) substrates held at elevated temperature by reactive sputtering from a W target in Kr/trimethylboron (TMB) plasmas. Quantitative analysis by X-ray photoelectron spectroscopy (XPS) shows that the films are W-rich between ~ 73 and ~ 93 at.% W. The highest metal content is detected in the film deposited with 1 sccm TMB. The C and B concentrations increase with inc…
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W-B-C films were deposited on Si(100) substrates held at elevated temperature by reactive sputtering from a W target in Kr/trimethylboron (TMB) plasmas. Quantitative analysis by X-ray photoelectron spectroscopy (XPS) shows that the films are W-rich between ~ 73 and ~ 93 at.% W. The highest metal content is detected in the film deposited with 1 sccm TMB. The C and B concentrations increase with increasing TMB flow to a maximum of ~18 and ~7 at.%, respectively, while the O content remains nearly constant at 2-3 at.%. Chemical bonding structure analysis performed after samples sputter-cleaning reveals C-W and B-W bonding and no detectable W-O bonds. During film growth with 5 sccm TMB and 500 oC or with 10 sccm TMB and 300-600 oC thin film X-ray diffraction shows the formation of cubic 100-oriented WC1-x with a possible solid solution of B. Lower flows and lower growth temperatures favor growth of W and W2C, respectively. Depositions at 700 and 800 oC result in the formation of WSi2 due to a reaction with the substrate. At 900 oC, XPS analysis shows ~96 at.% Si in the film due to Si interdiffusion. Scanning electron microscopy images reveal a fine-grained microstructure for the deposited WC1-x films. Nanoindentation gives hardness values in the range from ~23 to ~31 GPa and reduced elastic moduli between ~220 and 280 GPa in the films deposited at temperatures lower than 600 oC. At higher growth temperatures the hardness decreases by a factor of 3 to 4 following the formation of WSi2 at 700-800 oC and Si-rich surface at 900 oC.
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Submitted 16 September, 2019;
originally announced September 2019.
