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Room temperature cathodoluminescence quenching of Er3+ in AlNOEr
Authors:
Valerie Brien,
P. R. Edwards,
Pascal Boulet,
Kevin Peter O'Donnell
Abstract:
This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular AlNOErx samples with erbiumcontent, x, in the range 0.5--3.6 at%. A wide range of erbium concentration was studied with the aim ofunderstanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequencyreactive magnetron sputtering, was accurately determined by Energy Dispersive X-r…
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This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular AlNOErx samples with erbiumcontent, x, in the range 0.5--3.6 at%. A wide range of erbium concentration was studied with the aim ofunderstanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequencyreactive magnetron sputtering, was accurately determined by Energy Dispersive X-ray Spectroscopy (EDS). CLemission was investigated in the extended visible spectral range from 350 nm to 850 nm. The critical concentrationof luminescent activator Er3+ above which CL quenching occurs is 1%; the corresponding criticaldistance between Er3+ ions in AlNOErx is about 1.0 nm. The quenching mechanism is discussed. We discount anexchange-mediated interaction in favour of a multipole-multipole phonon-assisted interaction.
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Submitted 6 December, 2023;
originally announced December 2023.
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Low cycle fatigue of a nickel based superalloy at high temperature: deformation microstructures
Authors:
Valerie Brien,
B. Décamps
Abstract:
The microstructural characteristics of a single crystalline nickel based superalloy (AM1) tested under high temperature fatigue at 950$^\circ$C are reported. For repeated fatigue (R$_\varepsilon$=0) through a range of cycle numbers N with imposed total strain amplitude $Δ\varepsilon^t$, two main types of behaviour are found depending on N and $Δ\varepsilon^t$. This allows a map of microstructures…
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The microstructural characteristics of a single crystalline nickel based superalloy (AM1) tested under high temperature fatigue at 950$^\circ$C are reported. For repeated fatigue (R$_\varepsilon$=0) through a range of cycle numbers N with imposed total strain amplitude $Δ\varepsilon^t$, two main types of behaviour are found depending on N and $Δ\varepsilon^t$. This allows a map of microstructures versus the number of cycles N and $Δ\varepsilon^t$ to be constructed. A domain called A presents anisotropic microstructures due either to a partition of the plasticity throughout the k channels, or to an oriented coarsening of the k% precipitates of the so-called type N (rafts perpendicular to the loading axis). The domain called H shows homogeneous deformation microstructures. The coarsening observed in repeated fatigue is accounted for on the basis of a model proposed earlier in the literature by Véron. Alternate fatigue (R$_\varepsilon$ = -1) also leads to the same type of coarsening, even for a very low number of cycles (N=113). The microstructures observed are ascribed to internal stress effects and are related to the possible shearing of the precipitates and to different diffusion processes.
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Submitted 12 October, 2021;
originally announced October 2021.
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Preliminary Synthesis of Carbon Nitride Thin Films by N$_2$/CH$_4$ Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films
Authors:
Paul Kouakou,
Valerie Brien,
Badreddine Assouar,
Virginie Hody,
Mohammed Belmahi,
Henri Migeon,
Jamal Bougdira
Abstract:
The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N$_2$/CH$_4$ gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the N$_2$/CH$_4$ ratio involves an important production of the CN and C$_2$ radicals. In the films X-ray energy dispersion spectroscopy shows that th…
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The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N$_2$/CH$_4$ gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the N$_2$/CH$_4$ ratio involves an important production of the CN and C$_2$ radicals. In the films X-ray energy dispersion spectroscopy shows that the N/C ratio decreases when the CH$_4$ percentage in N$_2$ increases. Xray diffraction and electron diffraction are used to study the carbon nitride films nature. Scanning electron microscopy shows that the films consisted of nano-crystalline grains. Carbon balls are also present on the film surface for CH$_4$ percentage higher than 4%. The transmission electron microscopy confirms the nano-structure of the film and shows the isotropic etching of the substrates, during the film growth.
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Submitted 10 September, 2021;
originally announced September 2021.
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Low-cycle fatigue of a nickel-based superalloy at high temperature: Simplified micromechanical modelling
Authors:
Valerie Brien,
L. Kubin,
B. Décamps
Abstract:
This work is focused on the micromechanical modelling of the low cycle fatigue of the nickel based $γ/γ'$ superalloy AM1 at high temperature. The nature of the activated slip systems in the different types of channels of the $γ$ phase is analysed, taking into account the combined effects of the applied and internal stresses. The latter are split into two contributions, misfit stresses and compatib…
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This work is focused on the micromechanical modelling of the low cycle fatigue of the nickel based $γ/γ'$ superalloy AM1 at high temperature. The nature of the activated slip systems in the different types of channels of the $γ$ phase is analysed, taking into account the combined effects of the applied and internal stresses. The latter are split into two contributions, misfit stresses and compatibility stresses between the elastic $γ'$ phase and the elasto-plastic $γ$ phase, which are estimated within a simplified composite approach. Internal stresses may induce slip activity and/or be relaxed by it, which results in a complex sequence of slip activation events in the different channels under increasing applied stress. The consideration of these effects leads to a prediction of the nature and distribution of the active slip systems within the channels in [001] tension, compression and during low cycle fatigue. The resulting microstructural behaviour and its consequences regarding the anisotropic nature of the coalescence of the $γ'$ precipitates are discussed with respect to the available experimental data.
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Submitted 6 September, 2021;
originally announced September 2021.
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Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering
Authors:
Valerie Brien,
P. Miska,
H. Rinnert,
D. Genève,
P. Pigeat
Abstract:
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by…
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Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering parameters as a function of the Er concentration. The structure of crystallites in AlN films is observed by transmission electron microscopy.
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Submitted 26 October, 2020;
originally announced October 2020.
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Electron microscopy study of scratch-induced surface microstructures in an Al-Cu-Fe icosahedral quasicrystal
Authors:
J. Wu,
Valerie Brien,
P. Brunet,
C. Dong,
J. Dubois
Abstract:
Microstructure modifications induced by sliding a WC-Co indenter in scratch tests on the surface of a single phase AlCuFe icosahedral quasicrystal (IQC) was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The scratch track was shown tocomprise many smaller tracks. Dislocations were discovered to emerge from the edges of the smaller scratch tracks. Along a…
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Microstructure modifications induced by sliding a WC-Co indenter in scratch tests on the surface of a single phase AlCuFe icosahedral quasicrystal (IQC) was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The scratch track was shown tocomprise many smaller tracks. Dislocations were discovered to emerge from the edges of the smaller scratch tracks. Along a small track where shear stress is concentrated, a phase transition from IQC to a body-centered cubic (b.c.c.) phase with lattice parameter a=0.29 nm was pointed out. A modulated quasicrystal state as well as a deformation twin of IQC were determined in the region beneath the scratch.
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Submitted 26 October, 2020;
originally announced October 2020.
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Scratch-induced surface microstructures on the deformed surface of Al-Cu-Fe icosahedral quasicrystals
Authors:
J. S Wu,
Valerie Brien,
P. Brunet,
C. Dong,
J. -M Dubois
Abstract:
Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) investigations of sintered Al-Cu-Fe icosahedral quasicrystal (IQC) have been carried out to understand the origin of some ductility previously noticed within tracks produced by standard tribological scratch tests. Transformation of the icosahedral phase to a modulated structure is shown and a transformation of the IQC to…
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Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) investigations of sintered Al-Cu-Fe icosahedral quasicrystal (IQC) have been carried out to understand the origin of some ductility previously noticed within tracks produced by standard tribological scratch tests. Transformation of the icosahedral phase to a modulated structure is shown and a transformation of the IQC to a bcc phase has been found beneath the tracks. Twins and dislocations have also been observed.
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Submitted 26 October, 2020;
originally announced October 2020.
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Transversal growth microstructures of quasicrystalline Ti-Zr-Ni films
Authors:
Valerie Brien,
A. Dauscher,
P. Weisbecker,
J. Ghanbaja,
F Machizaud
Abstract:
Pulsed laser deposition from a Nd:YAG laser was employed in production of hundreds of nanometer thick quasicrystalline Ti-Zr-Ni films on glass substrate. The influence of deposition temperature Ts on the structure, morphology and microstructure of the films across their thickness was investigated. The morphology and microstructure features were evaluated by X-ray diffraction and transmission elect…
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Pulsed laser deposition from a Nd:YAG laser was employed in production of hundreds of nanometer thick quasicrystalline Ti-Zr-Ni films on glass substrate. The influence of deposition temperature Ts on the structure, morphology and microstructure of the films across their thickness was investigated. The morphology and microstructure features were evaluated by X-ray diffraction and transmission electron microscopy techniques. The low deposition temperatures were found to produce films with nanometer sized grains embedded in an amorphous matrix. The grains exhibit quasicrystalline order. The higher deposition temperatures lead to films whose structure is not uniform all along the growth direction. The layer in contact with the substrate is a very thin amorphous layer. The main part of the film consists of crystallized columns. The columns have grown from a nano-crystallized layer where the size of crystallites increases with increasing thickness.
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Submitted 23 October, 2020;
originally announced October 2020.
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Optical reflectivity as a simple diagnostic method for testing structural quality of icosahedral quasicrystals
Authors:
Valerie Brien,
Anne Dauscher,
F. Machizaud
Abstract:
Optical reflectivity as a simple diagnostic method for testing structural quality of icosahedral quasicrystals 2 The optical reflectivity of Al-based and Ti-based quasicrystalline and approximant samples were investigated versus the quality of their structural morphology using optical reflectometry, X-ray diffraction and transmission electron microscopy. The different structural morphologies were…
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Optical reflectivity as a simple diagnostic method for testing structural quality of icosahedral quasicrystals 2 The optical reflectivity of Al-based and Ti-based quasicrystalline and approximant samples were investigated versus the quality of their structural morphology using optical reflectometry, X-ray diffraction and transmission electron microscopy. The different structural morphologies were obtained using three different preparation processes : sintering, pulsed laser deposition and reactive cathodic magnetron sputtering. The work demonstrates that the canonical behaviour of icosahedral state in specular reflectivity is extremely sensitive to different and very fine aspects of the microstructure : sizes of grains smaller than 50 nm, slight local diffuse disorder and shifts away from the icosahedral crystallographic structure (approximants). The work explains why the optical properties of the same kind of quasicrystals found in literature sometimes reveal a different behaviour from one author to another. The study then confirms the work of some authors and definitely shows that the canonical behaviour of icosahedral state in specular reflectivity over the 30000-50000 cm-1 domain is characterized by a decreasing function made of steps. It also shows that this behaviour can be interpreted thanks to the cluster hierarchy of the model of Janot.
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Submitted 23 October, 2020;
originally announced October 2020.
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Optical characterization of nanocrystallized AlN:Er films prepared by magnetron sputtering
Authors:
Valerie Brien,
Manuel Dossot,
Hervé Rinnert,
Sajjad Hussain Sajjad,
Bernard Humbert,
P. Pigeat
Abstract:
In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using PVD magnetron sputtering. Their crystalline morphology and their visible photoluminescence properties were precisely measured.Due to the weak cross-section absorp…
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In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using PVD magnetron sputtering. Their crystalline morphology and their visible photoluminescence properties were precisely measured.Due to the weak cross-section absorption of rare earths like erbium, it is necessary to obtain an efficient energy transfer mechanism between the host matrix and the rare earth to obtain high luminescence efficiency. Our strategy is then to elaborate some nanostructures that could introduce additional intermediate electronic levels within the gap thanks to the presence of structural defects (point defects, grain boundaries{\ldots}) and could lead to energy transfer from the AlN matrix to the rare earth.Doped and non-doped AlN films were prepared by radio frequency magnetron sputtering by using different experimental conditions that will be detailed. It will notably be shown how a negative polarization of samples during deposition allows obtaining crystalline morphologies ranging from the classical columnar structure to a highly disordered polycrystalline structure with grains of several nanometers (nearly amorphous). The nanostructures of the films could be categorized in three types: 1) type 1 was nanocolumnar (width of column ~ 15 nm), 2) type 2 was made of short columns (width of column ~ 10 nm) and 3) the last type was made of equiaxed nanocrystallites (size of grains ~3-4 nm).High-resolution photoluminescence spectroscopy was performed to characterize their optical behaviour. The samples were excited by the laser wavelengths at 458, 488 or 514 nm. A broad photoluminescence band was observed centred around 520 nm in columnar samples. In the same energy range, the highly resolved spectra also showed several sharp emission peaks. This fine structure could be attributed to erbium transitions. This fine structure tended to disappear going from type 1 to type 3 samples. Indeed, the relative intensity of the peaks decreased and their full width at half maximum increased. This change could be related to the density of defects that increased when the size of the grains decreased. The photoluminescence properties of the films in the visible range will be discussed in relation with their structure.
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Submitted 19 October, 2020;
originally announced October 2020.
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Structural evolution of the elastic properties in nano-structured AlN film
Authors:
Rafael J. Jimenez-Rioboo,
Valerie Brien,
Philippe Pigeat
Abstract:
A study of the transverse acoustic phonons on nano-structured AlN films has been carried out by using high-resolution micro-Brillouin spectroscopy. Dense films have been deposited by radio frequency (r.f.) magnetron sputtering under ultra high vacuum at room temperature. Films with different morphologies were prepared and investigated by transmission electron microscopy and Brillouin Spectroscopy…
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A study of the transverse acoustic phonons on nano-structured AlN films has been carried out by using high-resolution micro-Brillouin spectroscopy. Dense films have been deposited by radio frequency (r.f.) magnetron sputtering under ultra high vacuum at room temperature. Films with different morphologies were prepared and investigated by transmission electron microscopy and Brillouin Spectroscopy (equiaxed nano-sized, nano-columnar grains and amorphous phase). Results show a dependence of the transverse modes on the nano-structure. The nano-columnar film exhibits two transversal modes as expected for the AlN w{ü}rtzite while the equiaxed nano-sized and the amorphous films only exhibit one isotropic transverse mode as expected in amorphous materials. One important result is that the sound propagation velocity in the AlN amorphous phase is higher than the one in the non-textured nano-crystalline phase. This phenomenon has, however, already been observed in ferroelectric ceramics.
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Submitted 6 October, 2020;
originally announced October 2020.
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Properties of amorphous CoZr(RE) (RE=Gd, Sm, Dy) films with various uniaxial anisotropies, prepared by a new process
Authors:
D. H Shin,
H Niedoba,
Y. Henry,
F Machizaud,
Valerie Brien,
D Chumakov,
R Schafer,
G Suran
Abstract:
If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE = Gd a perpendicular anisotropy K, forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined K…
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If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE = Gd a perpendicular anisotropy K, forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined K, is developed also in CoFeZrGd and CoZrGdSm films. CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial anisotropy. The related magnetization process and domain structures are quite peculiar.
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Submitted 5 October, 2020;
originally announced October 2020.
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Effect of tensile stresses on bainitic isothermal transformation
Authors:
T. Su,
M. Veaux,
E. Aeby-Gautier,
S. Denis,
Valerie Brien,
P. Archambault
Abstract:
The effects of tensile stresses on isothermal bainitic transformation were studied in the case of a 35MV7 steel. The modification of transformation kinetics and the presence of transformation plasticity is shown in a first step. Furthermore the effect of stress on the morphological modifications of the ferrite laths is illustrated. The role of the stress on these changes is analysed.
The effects of tensile stresses on isothermal bainitic transformation were studied in the case of a 35MV7 steel. The modification of transformation kinetics and the presence of transformation plasticity is shown in a first step. Furthermore the effect of stress on the morphological modifications of the ferrite laths is illustrated. The role of the stress on these changes is analysed.
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Submitted 2 October, 2020;
originally announced October 2020.
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Growth of a textured quasicrystalline phase in Ti-Ni-Zr films prepared by pulsed laser deposition
Authors:
Valerie Brien,
A. Dauscher,
P. Weisbecker,
F. Machizaud
Abstract:
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^\circ$C. Morphological and structural modifications have been followed by grazing incidence and $θ$-2$θ$ X-ray diffraction,…
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The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^\circ$C. Morphological and structural modifications have been followed by grazing incidence and $θ$-2$θ$ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by Electron Probe Micro-Analysis. The in-depth variation of composition has been studied by Secondary Neutral Mass Spectroscopy. We show that Pulsed Laser Deposition at 275$^\circ$C makes the formation of a 1 m thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible.
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Submitted 30 September, 2020;
originally announced September 2020.
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Ab initio investigation of the AlN:Er system
Authors:
Th. Pavloudis,
Valérie Brien,
Joseph Kioseoglou
Abstract:
In the present study an ab initio investigation on the AlN:Er system for concentrations of Er ranging from 0.78 to 12.5 % is presented. The crystallographic localisation of the rare earth atoms in the wurtzite lattice is determined, elucidating previously published experimental deductions, and the existence of a solid solution in the AlN:Er system in this range is confirmed. Er incorporation in th…
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In the present study an ab initio investigation on the AlN:Er system for concentrations of Er ranging from 0.78 to 12.5 % is presented. The crystallographic localisation of the rare earth atoms in the wurtzite lattice is determined, elucidating previously published experimental deductions, and the existence of a solid solution in the AlN:Er system in this range is confirmed. Er incorporation in the tetrahedral and octahedral insertion sites is shown to be thermodynamically metastable and is found to induce shallow states in the bandgaps. The effect of Er concentration on the lattice constants and bandgaps and bandstructures of the ErxAl1-xN ternary compound is presented. Finally, in accordance with experimental specifications, Er incorporation in the AlNO system is also examined.
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Submitted 15 November, 2019;
originally announced November 2019.
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Erbium location into AlN films as probed by spatial resolution experimental techniques
Authors:
Valerie Brien,
Pascal Boulet
Abstract:
This paper presents a thorough experimental investigation of erbium-doped aluminium nitride thin films prepared by R.F. magnetronsputtering, coupling Scanning Transmission Electron Microscopy X-ray-mapping imagery, conventional Transmission Electron Microscopy and X-ray diffraction. The study is an attempt of precise localisation of the rare earth atoms inside the films and in the hexagonal w{ü}rt…
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This paper presents a thorough experimental investigation of erbium-doped aluminium nitride thin films prepared by R.F. magnetronsputtering, coupling Scanning Transmission Electron Microscopy X-ray-mapping imagery, conventional Transmission Electron Microscopy and X-ray diffraction. The study is an attempt of precise localisation of the rare earth atoms inside the films and in the hexagonal w{ü}rtzite unit cell.The study shows that AlN:Erx is a solid solution even when x reaches 6 at.%, and does not lead to the precipitation of erbium rich phases. The X-ray diffraction measurements completed by simulation show that the main location of erbium in the AlN w{ü}rtzite is the metal substitution site on the whole range. They also show that octahedral and tetrahedral sites of the w{ü}rtzite do welcome Er ions over the [1.6--6%] range. The XRD deductions allow some interpretations on the theoretical mechanisms of the photoluminescence mechanisms and more specifically on their concentration quenching.
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Submitted 15 November, 2019;
originally announced November 2019.
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Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering
Authors:
Syed Sajjad Hussain,
Valerie Brien,
Hervé Rinnert,
Philippe Pigeat
Abstract:
The effect of magnetron power on the room temperature 1.54 $μ$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium dopi…
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The effect of magnetron power on the room temperature 1.54 $μ$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 atomic %). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. Copyright line will be provided by the publisher 1 Introduction For some time now, rare-earth (RE)-doped semiconductors represent significant potential applications in the field of opto-electronic technology. Part of this technological interest relies on the shielded 4f levels of the RE ions as they give rise to sharp and strong luminescence peaks [1-5]. Among the RE elements, Er is preferred to its counterparts since the Er ions can produce both visible light at 558 nm (green, one of the primary colours) and IR light at 1.54 $μ$m whose spectrum region coincides with the main low-loss region in the absorption spectrum of silica-based optical fibres, combining so potential applications towards photonic devices and towards optical communication devices operating in the infrared domain. These interesting emissions can however only be exploited when placed into host matrixes. On one side, the shielding of the intra 4f levels prevents the shifting of the RE 3+ energy levels and ensures the frequency emission stability. Moreover the intra 4f transitions are parity forbidden for the isolated ions. Matrixes can render the Er 3+ ions optically active, via a relaxation of selection rules due to crystal field effects. As silicon based materials were tested in the 1960s to the 90s with no clear industrial success it was found that the
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Submitted 13 September, 2019;
originally announced September 2019.
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Microstructures Diagram Of Magnetron Sputtered Aln Deposits : Amorphous And Nanostructured Films
Authors:
Valerie Brien,
P. Pigeat
Abstract:
In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma work…
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In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron Microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. Their microstructure and chemical composition were studied versus the plasma working pressure and the radio frequency power. Systematic analysis of cross views of the films allowed the authors to draw a microstructure/process parameters map. Four microstructural types were distinguished according to the decrease of the deposition rate. One is the well-known columnar microstructure. The second one is made of interrupted columns or fibrous grains. The third one is made of nano-sized particles (size of the particles ranges from 1.7 to 8 nm). The fourth and last microstructure is amorphous. The "deposit morphology-process parameters" correlation is commented on.
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Submitted 4 September, 2019;
originally announced September 2019.
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Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er x films with x $\le$ 3.6%
Authors:
M. Katsikini,
V. Kachkanov,
Pascal Boulet,
P. Edwards,
Kevin Peter O'Donnell,
Valerie Brien
Abstract:
The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L 3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er 2 O 3 or Er clusters.…
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The structural properties of Er-doped AlNO epilayers grown by radio frequency magnetron sputtering were studied by Extended X-ray Absorption Fine Structure (EXAFS) spectra recorded at the Er L 3 edge. The analysis revealed that Er substitutes for Al in all the studied samples and the increase in Er concentration from 0.5 to 3.6 at.% is not accompanied by formation of ErN, Er 2 O 3 or Er clusters. Simultaneously recorded X-ray Absorption Near Edge Structure (XANES) spectra verify that the bonding configuration of Er is similar in all studied samples. The Er-N distance is 2 constant at 2.18-2.19 Å i.e. approximately 15% larger than the Al-N bondlength, revealing that the introduction of Er in the cation sublattice causes considerable local distortion. The Debye-Waller factor, which measures the static disorder, of the second nearest shell of Al neighbors, has a local minimum for the sample containing 1% Er that coincides with the highest photoluminescence efficiency of the sample set.
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Submitted 3 April, 2019;
originally announced April 2019.
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Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering
Authors:
H. Rinnert,
S. S. Hussain,
Valerie Brien,
P. Pigeat
Abstract:
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure…
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Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1 at. % and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er 3+ ions occurs for excitation wavelengths lower than 600 nm. It is also suggested that Er ions occupy at least two different sites in the AlN host matrix.
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Submitted 3 April, 2019;
originally announced April 2019.
