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Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures
Authors:
Jan Tröger,
Reinhard Kersting,
Birgit Hagenhoff,
Dominique Bougeard,
Nikolay V. Abrosimov,
Jan Klos,
Lars R. Schreiber,
Hartmut Bracht
Abstract:
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced p…
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The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced profile broadening. As model system, a state-of-the-art Molecular Beam Epitaxy (MBE) grown multilayer homostructure consisting of $^{\textit{nat}}$Si/$^{28}$Si bilayers with only 2 nm in thickness is investigated while varying the most relevant sputter parameters. Atomic concentration-depth profiles are determined and an error function based description model is used to quantify layer thicknesses as well as profile broadening. The optimization process leads to an excellent resolution of the multilayer homostructure. The results of this optimization guide to a ToF-SIMS analysis of another MBE grown heterostructure consisting of a strained and highly purified $^{28}$Si layer sandwiched between two Si$_{0.7}$Ge$_{0.3}$ layers. The sandwiched $^{28}$Si layer represents a quantum well that has proven to be an excellent host for the implementation of electron-spin qubits.
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Submitted 25 July, 2024;
originally announced July 2024.
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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Authors:
Jan Klos,
Jan Tröger,
Jens Keutgen,
Merritt P. Losert,
Helge Riemann,
Nikolay V. Abrosimov,
Joachim Knoch,
Hartmut Bracht,
Susan N. Coppersmith,
Mark Friesen,
Oana Cojocaru-Mirédin,
Lars R. Schreiber,
Dominique Bougeard
Abstract:
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing…
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Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
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Submitted 30 May, 2024;
originally announced May 2024.
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Atomic mechanisms of self-diffusion in amorphous silicon
Authors:
Matthias Posselt,
Hartmut Bracht,
Mahdi Ghorbani-Asl,
Drazen Radić
Abstract:
Based on recent calculations of the self-diffusion (SD) coefficient in amorphous silicon (a-Si) by classical Molecular Dynamics simulation [M. Posselt, H. Bracht, and D. Radić, J. Appl. Phys. 131, 035102 (2022)] detailed investigations on atomic mechanisms are performed. For this purpose two Stillinger-Weber-type potentials are employed, one strongly overestimates the SD coefficient, while the oth…
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Based on recent calculations of the self-diffusion (SD) coefficient in amorphous silicon (a-Si) by classical Molecular Dynamics simulation [M. Posselt, H. Bracht, and D. Radić, J. Appl. Phys. 131, 035102 (2022)] detailed investigations on atomic mechanisms are performed. For this purpose two Stillinger-Weber-type potentials are employed, one strongly overestimates the SD coefficient, while the other leads to values much closer to the experimental data. By taking into account the individual squared displacements (or diffusion lengths) of atoms the diffusional and vibrational contributions to the total mean squared displacement can be determined separately. It is shown that the diffusional part is not directly correlated with the concentration of coordination defects. The time-dependent distribution of squared displacements of atoms indicates that in a-Si a well-defined elemental diffusion length does not exist, in contrast to SD in the crystalline Si. The analysis of atoms with large squared displacements reveals that the mechanisms of SD in a-Si are characterized by complex rearrangements of bonds or exchange of neighbors. These are mono- and bi-directional exchanges of neighbors and neighbor replacements. Exchanges or replacements may concern up to three neighbors and may occur in relatively short periods of some ps. Bi- or mono-directional exchange or replacement of one neighbor atom happen more frequently than processes including more neighbors. A comparison of results for the two interatomic potentials shows that an increased three-body parameter only slows down the migration, but does not change the migration mechanisms fundamentally.
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Submitted 10 October, 2022; v1 submitted 15 August, 2022;
originally announced August 2022.
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Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Authors:
Slawomir Prucnal,
Maciej O. Liedke,
Xiaoshuang Wang,
Maik Butterling,
Matthias Posselt,
Joachim Knoch,
Horst Windgassen,
Eric Hirschmann,
Yonder Berencén,
Lars Rebohle,
Mao Wang,
Enrico Napoltani,
Jacopo Frigerio,
Andrea Ballabio,
Giovani Isella,
René Hübner,
Andreas Wagner,
Hartmut Bracht,
Manfred Helm,
Shengqiang Zhou
Abstract:
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen…
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The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
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Submitted 28 October, 2020;
originally announced October 2020.
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Nanoscopic Study of the Ion Dynamics in a LiAlSiO$_4$ Glass Ceramic by means of Electrostatic Force Spectroscopy
Authors:
Bernhard Roling,
André Schirmeisen,
Hartmut Bracht,
Ahmet Taskiran,
Harald Fuchs,
Sevi Murugavel,
Frank Natrup
Abstract:
We use time-domain electrostatic force spectroscopy (TD-EFS) for characterising the dynamics of mobile ions in a partially crystallised LiAlSiO$_4$ glass ceramic, and we compare the results of the TD-EFS measurements to macroscopic electrical conductivity measurements. While the macroscopic conductivity spectra are determined by a single dynamic process with an activation energy of 0.72 eV, the…
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We use time-domain electrostatic force spectroscopy (TD-EFS) for characterising the dynamics of mobile ions in a partially crystallised LiAlSiO$_4$ glass ceramic, and we compare the results of the TD-EFS measurements to macroscopic electrical conductivity measurements. While the macroscopic conductivity spectra are determined by a single dynamic process with an activation energy of 0.72 eV, the TD-EFS measurements provide information about two distinct relaxation processes with different activation energies. Our results indicate that the faster process is due to ionic movements in the glassy phase and at the glass-crystal interfaces, while the slower process is caused by ionic movements in the crystallites. The spatially varying electrical relaxation strengths of the fast and of the slow process provide information about the nano- and mesoscale structure of the glass ceramic.
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Submitted 8 December, 2004;
originally announced December 2004.
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Probing ion transport at the nanoscale: Time-domain electrostatic force spectroscopy on glassy electrolytes
Authors:
A. Schirmeisen,
A. Taskiran,
H. Fuchs,
B. Roling,
S. Murugavel,
H. Bracht,
F. Natrup
Abstract:
We have carried out time--domain electrostatic force spectroscopy on two different ion conducting glasses using an atomic force microscope. We compare the electrostatic force spectroscopic data obtained at different temperatures with macroscopic electrical data of the glasses. The overall consistency of the data shows that electrostatic force spectroscopy is capable of probing the ion dynamics a…
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We have carried out time--domain electrostatic force spectroscopy on two different ion conducting glasses using an atomic force microscope. We compare the electrostatic force spectroscopic data obtained at different temperatures with macroscopic electrical data of the glasses. The overall consistency of the data shows that electrostatic force spectroscopy is capable of probing the ion dynamics and transport in nanoscopic subvolumes of the samples.
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Submitted 6 May, 2004;
originally announced May 2004.
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Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers
Authors:
A. Koeder,
S. Frank,
W. Schoch,
V. Avrutin,
W. Limmer,
K. Thonke,
R. Sauer,
M. Krieger,
K. Zuern,
P. Ziemann,
S. Brotzmann,
H. Bracht,
A. Waag
Abstract:
We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease of the Curie temperature from the surface to the GaMnAs/GaAs interface. While high resolution x-ray diffraction clearly shows a homogeneous Mn…
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We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease of the Curie temperature from the surface to the GaMnAs/GaAs interface. While high resolution x-ray diffraction clearly shows a homogeneous Mn distribution, a pronounced decrease of the carrier concentration from the surface towards the GaMnAs/GaAs interface has been found by Raman spectroscopy as well as electrochemical capacitance-voltage profiling. The gradient in Curie temperature seems to be a general feature of GaMnAs layers grown at low-temperature. Possible explanations are discussed.
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Submitted 9 December, 2002;
originally announced December 2002.
