Scalable quantum current source on commercial 22-nm CMOS process technology
Authors:
Ajit Dash,
Suyash Pati Tripathi,
Dimitrios Georgakopoulos,
MengKe Feng,
Steve Yianni,
Ensar Vahapoglu,
Md Mamunur Rahman,
Shai Bonen,
Owen Brace,
Jonathan Y. Huang,
Wee Han Lim,
Kok Wai Chan,
Will Gilbert,
Arne Laucht,
Andrea Morello,
Andre Saraiva,
Christopher C. Escott,
Sorin P. Voinigescu,
Andrew S. Dzurak,
Tuomo Tanttu
Abstract:
Utilizing quantum effects in nanoscopic devices has in the past mostly been accessible through academic cleanrooms and research foundries. Opening the quantum frontier for wider industrial applications likely requires the scale of well-established complementary metal-oxide-semiconductor (CMOS) foundries for manufacturing transistor-based quantum devices operable above subkelvin temperatures. Here,…
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Utilizing quantum effects in nanoscopic devices has in the past mostly been accessible through academic cleanrooms and research foundries. Opening the quantum frontier for wider industrial applications likely requires the scale of well-established complementary metal-oxide-semiconductor (CMOS) foundries for manufacturing transistor-based quantum devices operable above subkelvin temperatures. Here, we operate a commercial 22-nm-node fully depleted silicon-on-insulator (FDSOI) CMOS device as dual parallel-connected charge-pumps for the implementation of a quantum current standard in the International System of Units (SI). We measure the accuracy of (1.2 +/- 0.1)E-3 A/A for this scalable architecture at 50 MHz with reference to SI-traceable voltage and resistance standards in a pumped helium system. Looking ahead we propose a practical monolithic CMOS chip that incorporates one million parallel-connected charge pumps along with on-chip control electronics. This can be operated as a table-top primary standard, generating quantum currents up to microampere levels.
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Submitted 18 June, 2025;
originally announced June 2025.
