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Energy barriers of Be and B in passing through the C60 fullerene cage
Authors:
A. V. Bibikov,
A. V. Nikolaev,
P. V. Borisyuk,
E. V. Tkalya
Abstract:
We have studied the potential barriers for the penetration of atomic beryllium or boron inside the C60 fullerene by performing ab initio density functional theory (DFT) calculations with three variants for the exchange and correlation: B3LYP (hybrid functional), PW91 and PBE. Four principal trajectories to the inner part of C60 for the penetrating atom have been considered: through the center of s…
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We have studied the potential barriers for the penetration of atomic beryllium or boron inside the C60 fullerene by performing ab initio density functional theory (DFT) calculations with three variants for the exchange and correlation: B3LYP (hybrid functional), PW91 and PBE. Four principal trajectories to the inner part of C60 for the penetrating atom have been considered: through the center of six-member-carbon ring (hexagon), five-member-carbon ring (pentagon), and also through the center of the double C-C bond (D-bond) and the center of the single C-C bond (S-bond). Averaging over the three DFT variants yields the following barriers for beryllium penetrating inside a deformable fullerene: 3.2 eV (hexagon), 4.8 eV (S-bond), 5.3 eV (D-bond), 5.9~eV (pentagon). These barriers correspond to the slow and adiabatic penetration of Be, in contrast to the fast (non-adiabatic) penetration through the rigid cage of C60 resulting in 5.6 eV (hexagon), 16.3 eV (pentagon), 81.8 eV (S-bond) and 93.4 eV (D-bond). The potential barriers for the boron penetrating inside deformable/rigid C60 are: 3.7/105.4 eV (D-bond), 4.0/86.8 eV (S-bond), 4.7/7.8 eV (hexagon), 6.8/14.0 eV (pentagon). The potential barriers for Be and B escaping from the inner part of C$_{60}$ are higher by the value of 0.84 eV for Be and 0.81 eV for B. The considerable reduction of the potential barriers for the deformable fullerene is ascribed to the formation of the Be-C and B-C bonds. We discuss the difference between Be and B, compare three variants of DFT, and analyze the role of the dispersion interaction.
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Submitted 21 December, 2023;
originally announced December 2023.
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Reply to Comment on "Multiple locations of boron atoms in the exohedral and endohedral C60 fullerene" by J. Xu and G.-L. Hou
Authors:
A. V. Bibikov,
A. V. Nikolaev,
I. V. Bodrenko,
P. V. Borisyuk,
E. V. Tkalya
Abstract:
In three out of five cases considered in our work, DFT calculations presented by Xu and Hou in their Comment give the same ground state confirmations. On the other hand, depending on the choice of the exchange-correlation functional, the geometry optimization within DFT results in different ground state confirmations for B@C60 and B60, Table I of the Comment. Therefore, the energy balance between…
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In three out of five cases considered in our work, DFT calculations presented by Xu and Hou in their Comment give the same ground state confirmations. On the other hand, depending on the choice of the exchange-correlation functional, the geometry optimization within DFT results in different ground state confirmations for B@C60 and B60, Table I of the Comment. Therefore, the energy balance between nearest confirmations in these molecular complexes is subtle, and various methods can give different ground state structures. Consequently, the results of our method - the Hartree-Fock (HF) approach with the second order Møller-Plesset perturbation theory (MP2) - should be compared with the DFT results on equal ground, we cannot agree that the DFT method used in the Comment is superior to HF-MP2. In the Reply, we also present additional HF calculations with the 6-31G* basis set (used in the Comment for the geometry optimization) to show that the polarization functions do not change the ground state confirmations obtained by us earlier at the HF/6-31G level.
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Submitted 11 November, 2022;
originally announced November 2022.
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Proposal for a Nuclear Light Source
Authors:
E. V. Tkalya,
P. V. Borisyuk,
M. S. Domashenko,
Yu. Yu. Lebedinskii
Abstract:
The paper considers a principal possibility of creating a nuclear light source of the vacuum ultra violet (VUV) range based on the $^{229}$Th nucleus. This nuclear light source can help to solve two main problems -- excitation of the low-lying $^{229m}$Th isomer and precision measurement of the nuclear isomeric transition energy. The Thorium nuclear light source is based on the nuclei implanted in…
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The paper considers a principal possibility of creating a nuclear light source of the vacuum ultra violet (VUV) range based on the $^{229}$Th nucleus. This nuclear light source can help to solve two main problems -- excitation of the low-lying $^{229m}$Th isomer and precision measurement of the nuclear isomeric transition energy. The Thorium nuclear light source is based on the nuclei implanted in a thin dielectric film with a large bandgap. While passing an electric current through the sample, the $^{229}$Th nuclei are excited to the low energy isomeric state $3/2^+(8.19\pm0.12$ eV) in the process of inelastic scattering of conduction electrons. The subsequent spontaneous decay of $^{229m}$Th is followed by the emission of $γ$ quanta in the VUV range. The luminosity of the Thorium nuclear light source is approximately $10^5$~photons/s per 1~A of current and per 1~ng of $^{229}$Th. The suggested scheme to obtain $γ$ radiation from the $^{229m}$Th isomer can be considered as a kind of nuclear analogue of the optical radiation from the usual metal-insulator-semiconductor (MIS) junction.
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Submitted 5 October, 2022;
originally announced October 2022.
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Excitation of $^{229}$Th nuclei in laser plasma: the energy and half-life of the low-lying isomeric state
Authors:
P. V. Borisyuk,
E. V. Chubunova,
N. N. Kolachevsky,
Yu. Yu. Lebedinskii,
O. S. Vasiliev,
E. V. Tkalya
Abstract:
The results of experimental studies of the low-energy isomeric state in the $^{229}$Th nucleus are presented. The work is consisted of several stages. During the first stage $^{229}$Th nuclei were excited with the inverse internal conversion to the low-lying isomeric level in plasma that was formed by laser pulse at the $^{229}$Th-containing target surface. Then thorium ions having excited nuclei…
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The results of experimental studies of the low-energy isomeric state in the $^{229}$Th nucleus are presented. The work is consisted of several stages. During the first stage $^{229}$Th nuclei were excited with the inverse internal conversion to the low-lying isomeric level in plasma that was formed by laser pulse at the $^{229}$Th-containing target surface. Then thorium ions having excited nuclei were extracted from the plasma by an external electrical field and implanted into thin SiO$_2$ film grown on a silicon substrate (that is a dielectric material with about 9 eV band-gap). Gamma decay of isomeric nuclei was registered during the second stage by the general methods of the electron spectroscopy after the photon-electron emission from the silicon substrate. Substitution of the photon registration with the electron one allowed us to increase the desired signal by several orders of magnitude and detect the $^{229}$Th nuclei decay. During the third stage the electron spectra from standard Xe VUV source was obtained that allowed determining the energy of photons. In order to prove that the detected signal is caused by isomeric $^{229}$Th nuclei decay a series of experiments was carried. The analysis of electron spectra gives the following results: the energy of the nuclear transition is $E_{\text{is}}=7.1(^{+0.1}_{-0.2})$~eV, the half-life of the isomeric level in bare nucleus in vacuum is $T_{1/2}=1880\pm170$~s, the reduced probability of the isomeric nuclear transition is $B_{\text{W.u.}}(M1;3/2^+\rightarrow 5/2^+)=(3.3\pm0.3)\times10^{-2}$.
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Submitted 1 April, 2018;
originally announced April 2018.
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Experimental studies of thorium ions implantation from pulse laser plasma into thin silicon oxide layers
Authors:
P. V. Borisyuk,
E. V. Chubunova,
Yu. Yu. Lebedinskii,
E. V. Tkalya,
O. S. Vasilyev,
V. P. Yakovlev,
E. Strugovshchikov,
D. Mamedov,
A. Pishtshev,
S. Zh. Karazhanov
Abstract:
We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and SiO2/Si(001) sample.…
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We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and SiO2/Si(001) sample. Laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with YAG:Nd3+ laser having the pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. Depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of X-ray photoelectron spectroscopy (XPS) and Reflected Electron Energy Loss Spectroscopy (REELS) methods. Analysis of chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on local concentration of thorium atoms, the experimentally established band gaps were located in the range of 6.0 - 9.0 eV. Theoretical studies of optical properties of the SiO2 and ThO2 crystalline systems have been performed by ab initio calculations within hybrid functional. Optical properties of the SiO2/ThO2 composite were interpreted on the basis of Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in "hot" laser plasma at the early stages of expansion has been performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in 229Th isotope with energy of 7.8(0.5) eV.
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Submitted 9 November, 2017;
originally announced November 2017.
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Investigation of the electronic properties of the surface and bulk forms of gold and palladium
Authors:
U. N. Kurelchuk,
P. V. Borisyuk,
O. S. Vasilyev,
Yu. Yu. Lebedinsky
Abstract:
The density of electronic states for bulk metals Au and Pd, their surfaces in the form of polycrystalline surface layers of nanometer thickness is investigated. The calculations were performed using density functional theory with pseudopotential in full relativistic approximation. Approximations have been found that provide calculations the density of electronic states of noble metal surfaces that…
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The density of electronic states for bulk metals Au and Pd, their surfaces in the form of polycrystalline surface layers of nanometer thickness is investigated. The calculations were performed using density functional theory with pseudopotential in full relativistic approximation. Approximations have been found that provide calculations the density of electronic states of noble metal surfaces that describe the experimentally observed features of XPS spectra of the valence band of these metals.
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Submitted 2 October, 2017;
originally announced October 2017.
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Calculation of density of states of transition metals: from bulk sample to nanocluster
Authors:
Petr V. Borisyuk,
Oleg S. Vasiliev,
Yaroslav V. Zhumagulov,
Vladimir A. Kashurnikov,
Andrey V. Krasavin,
Uliana N. Kurelchuk,
Yuriy Yu. Lebedinskii
Abstract:
The technique is presented of restoring the electronic density of states of the valence band from data of X-ray photoelectron spectroscopy. The originality of the technique consists in using a stochastic procedure to solve an integral equation relating the density of states and the experimental X-ray photoelectron spectra. The results are presented for bulk sample of gold and nanoclusters of tanta…
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The technique is presented of restoring the electronic density of states of the valence band from data of X-ray photoelectron spectroscopy. The originality of the technique consists in using a stochastic procedure to solve an integral equation relating the density of states and the experimental X-ray photoelectron spectra. The results are presented for bulk sample of gold and nanoclusters of tantalum; the possibility of using the results to determine the density of states of low-dimensional structures, including ensembles of metal nanoclusters, is demonstrated.
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Submitted 10 December, 2016;
originally announced December 2016.
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Size dependence of thermoelectric power of Au, Pd, Pt nanoclusters deposited onto HOPG surface
Authors:
P. V. Borisyuk,
V. I. Troyan,
Yu Yu Lebedinskii,
O S Vasilyev
Abstract:
The paper presents the study of tunnel current-voltage characteristics of Au, Pd and Pt nanoclusters deposited onto the highly oriented pyrolytic graphite (HOPG) surface by pulsed laser deposition. The analysis of tunnel current-voltage characteristics obtained by scanning tunneling spectroscopy (STS) allowed to recover the thermoelectric power value of nanoclusters. It was found that the value of…
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The paper presents the study of tunnel current-voltage characteristics of Au, Pd and Pt nanoclusters deposited onto the highly oriented pyrolytic graphite (HOPG) surface by pulsed laser deposition. The analysis of tunnel current-voltage characteristics obtained by scanning tunneling spectroscopy (STS) allowed to recover the thermoelectric power value of nanoclusters. It was found that the value of thermoelectric power of pulsed laser deposited nanoclusters depends on nanocluster material and shows qualitative difference in size dependence for different materials of nanoclusters. Thus, thermoelectric power value of PLD Pd nanoclusters decreases with increasing of nanocluster size, while for Au nanoclusters this value increases. The analysis of the results are discussed.
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Submitted 15 February, 2016;
originally announced February 2016.
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Band structure and decay channels of thorium-229 low-lying isomeric state for ensemble of thorium atoms adsorbed on calcium fluoride
Authors:
P. V. Borisyuk,
O. S. Vasilyev,
A. V. Krasavin,
Yu. Yu. Lebedinskii,
V. I. Troyan,
E. V. Tkalya
Abstract:
The results are presented on the study of the electronic structure of thorium atoms adsorbed by the liquid atomic layer deposition from aqueous solution of thorium nitrate on the surface of CaF2. The chemical state of the atoms and the change of the band structure in the surface layers of Th/CaF2 system on CaF2 substrate were investigated by XPS and REELS techniques. It was found that REELS spectr…
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The results are presented on the study of the electronic structure of thorium atoms adsorbed by the liquid atomic layer deposition from aqueous solution of thorium nitrate on the surface of CaF2. The chemical state of the atoms and the change of the band structure in the surface layers of Th/CaF2 system on CaF2 substrate were investigated by XPS and REELS techniques. It was found that REELS spectra for Th/CaF2 system include peaks in the region of low energy losses (3-7 eV) which are missing in the similar spectra for pure CaF2. It is concluded that the presence of the observed features in the REELS spectra is associated with the chemical state of thorium atoms and is caused by the presence of uncompensated chemical bonds at the Th/CaF2 interface, and, therefore, by the presence of unbound 6d- and 7s-electrons of thorium atoms. Assuming the equivalence of the electronic configuration of thorium-229 and thorium-232 atoms, an estimate was made on the time decay of the excited state of thorium-229 nuclei through the channel of the electron conversion. It was found that the relaxation time is about 40 μs for 6d-electrons, and about 1 μs for 7s-electrons.
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Submitted 20 June, 2015;
originally announced June 2015.
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Influence of the electrons on the stability of one-dimensional chains of metals
Authors:
V. D. Borman,
P. V. Borisyuk,
M. A. Pushkin,
I. V. Tronin,
V. N. Tronin,
V. I. Troyan,
O. S. Vasiliev
Abstract:
The physical model describing the influence of the electronic subsystem on the properties of one-dimensional chains of metal is presented. It is shown that depending on an interaction potential between atoms in one-dimensional system formation of chains of various length is possible. In case the characteristic depth of the potential well of the interatomic interaction does not exceed a certain mag…
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The physical model describing the influence of the electronic subsystem on the properties of one-dimensional chains of metal is presented. It is shown that depending on an interaction potential between atoms in one-dimensional system formation of chains of various length is possible. In case the characteristic depth of the potential well of the interatomic interaction does not exceed a certain magnitude, the chains in 1D system are formed with length of several angstroms, while the increase the depth of the well also leads to the possibility of formation of metal chains of greater length.
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Submitted 14 July, 2011;
originally announced July 2011.
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Melting Point Shift in Supported Metal Nanoclusters
Authors:
V. D. Borman,
P. V. Borisyuk,
M. A. Pushkin,
I. V. Tronin,
V. N. Tronin,
V. I. Troyan,
O. S. Vasiliev,
M. V. Vitovskaya
Abstract:
The dependency of the melting point of supported metal nanoclusters as function of clusters height is theoretically investigated in the framework of the uniform approach. The vacancy mechanism describing the melting point shift in nanoclusters with decrease of their size is proposed. It is shown that the essential role in clusters melting point shift is played by van der Waals forces of cluster-su…
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The dependency of the melting point of supported metal nanoclusters as function of clusters height is theoretically investigated in the framework of the uniform approach. The vacancy mechanism describing the melting point shift in nanoclusters with decrease of their size is proposed. It is shown that the essential role in clusters melting point shift is played by van der Waals forces of cluster-substrate interaction. It is shown, that the account of layer--by--layer fusion of a cluster allows to satisfactorily describe the melting of nanoclusters of various metals, deposited onto a different substrates. The proposed model satisfactorily accounts for the experimental data.
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Submitted 4 July, 2010;
originally announced July 2010.
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Melting Point and Lattice Parameter Shifts in Supported Metal Nanoclusters
Authors:
V. D. Borman,
I. V. Tronin,
V. N. Tronin,
V. I. Troyan,
O. S. Vasiliev,
P. V. Borisyuk,
M. A. Pushkin
Abstract:
The dependencies of the melting point and the lattice parameter of supported metal nanoclusters as functions of clusters height are theoretically investigated in the framework of the uniform approach. The vacancy mechanism describing the melting point and the lattice parameter shifts in nanoclusters with decrease of their size is proposed. It is shown that under the high vacuum conditions (p<10^…
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The dependencies of the melting point and the lattice parameter of supported metal nanoclusters as functions of clusters height are theoretically investigated in the framework of the uniform approach. The vacancy mechanism describing the melting point and the lattice parameter shifts in nanoclusters with decrease of their size is proposed. It is shown that under the high vacuum conditions (p<10^-7 torr) the essential role in clusters melting point and lattice parameter shifts is played by the van der Waals forces of cluster-substrate interation. The proposed model satisfactorily accounts for the experimental data.
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Submitted 7 July, 2009; v1 submitted 24 June, 2008;
originally announced June 2008.
