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Showing 1–1 of 1 results for author: Bonturim, E

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  1. arXiv:2012.09299  [pdf

    physics.app-ph

    Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior

    Authors: Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart, Everton Bonturim, Daniel Z. de Florio, Fabio C. Fonseca, Dominique Drouin, Andre S. Ferlauto

    Abstract: Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments. In order to reduce D2D variability, the control of oxygen vacancy formation an… ▽ More

    Submitted 22 April, 2021; v1 submitted 16 December, 2020; originally announced December 2020.

    Comments: 19 pages, 10 figures