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Single-crystalline CrSb(0001) thin films grown by dc magnetron co-sputtering
Authors:
S. P. Bommanaboyena,
C. Müller,
M. Jarošová,
K. Wolk,
S. Telkamp,
P. Zeng,
F. Křížek,
K. Olejník,
D. Scheffler,
K. Beranová,
S. Banerjee,
M. Ledinský,
H. Reichlová,
T. Jungwirth,
L. Horák,
D. Kriegner
Abstract:
The recent discovery of altermagnetism has sparked renewed interest in the growth of epitaxial films of the NiAs-phase polymorph of CrSb. This paper describes the magnetron sputtering-based fabrication and characterization of high-quality single crystalline CrSb(0001) thin films supported by an isostructural non-magnetic PtSb buffer. X-ray diffraction and scanning transmission electron microscopy…
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The recent discovery of altermagnetism has sparked renewed interest in the growth of epitaxial films of the NiAs-phase polymorph of CrSb. This paper describes the magnetron sputtering-based fabrication and characterization of high-quality single crystalline CrSb(0001) thin films supported by an isostructural non-magnetic PtSb buffer. X-ray diffraction and scanning transmission electron microscopy show that the films are phase-pure and possess a very high crystalline quality (mosaicity ~0.05 deg), while also being free of extended crystallographic defects. Both scanning electron microscopy and atomic force microscopy confirm their smooth and homogeneous topography. Additionally, the elemental composition of our films was found to be close to stoichiometric via electron probe microanalysis and X-ray fluorescence. Thus, the developed samples represent an ideal platform for further investigation of the material properties of CrSb.
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Submitted 28 February, 2025;
originally announced February 2025.
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Spin Hall magnetoresistance at the altermagnetic insulator/Pt interface
Authors:
Miina Leiviskä,
Reza Firouzmandi,
Kyo-Hoon Ahn,
Peter Kubaščik,
Zbynek Soban,
Satya Prakash Bommanaboyena,
Christoph Müller,
Dominik Kriegner,
Sebastian Sailler,
Michaela Lammel,
Kranthi Kumar Bestha,
Libor Šmejkal,
Jakub Zelezny,
Anja U. B. Wolter,
Monika Scheufele,
Johanna Fischer,
Matthias Opel,
Stephan Geprägs,
Matthias Althammer,
Bernd Büchner,
Tomas Jungwirth,
Lukáš Nádvorník,
Sebastian T. B. Goennenwein,
Vilmos Kocsis,
Helena Reichlová
Abstract:
The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is known as spin Hall magnetoresistance. The dissipation of the spin accumulation can occur via various mechanisms, with spin-transfer torque being the most extens…
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The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is known as spin Hall magnetoresistance. The dissipation of the spin accumulation can occur via various mechanisms, with spin-transfer torque being the most extensively studied. In this work, we report the observation of spin Hall magnetoresistance at the interface between platinum and an insulating altermagnetic candidate, Ba$_2$CoGe$_2$O$_7$. Our findings reveal that this heterostructure exhibits a relatively large spin Hall magnetoresistance signal, which is anisotropic with respect to the crystal orientation of the current channel. We explore and rule out several potential explanations for this anisotropy and propose that our results may be understood in the context of the anisotropic altermagnetic ordering of Ba$_2$CoGe$_2$O$_7$.
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Submitted 31 January, 2025;
originally announced January 2025.
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Readout of a antiferromagnetic spintronics systems by strong exchange coupling of Mn2Au and Permalloy
Authors:
S. P. Bommanaboyena,
D. Backes,
L. S. I. Veiga,
S. S. Dhesi,
Y. R. Niu,
B. Sarpi,
T. Denneulin,
A. Kovacs,
T. Mashoff,
O. Gomonay,
J. Sinova,
K. Everschor-Sitte,
D. Schönke,
R. M. Reeve,
M. Kläui,
H. -J. Elmers,
M. Jourdan
Abstract:
In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Neel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit…
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In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Neel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-estabished read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are retained. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn2Au Neel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling.
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Submitted 4 June, 2021;
originally announced June 2021.
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Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au
Authors:
S. Yu. Bodnar,
M. Filianina,
S. P. Bommanaboyena,
T. Forrest,
F. Maccherozzi,
A. A. Sapozhnik,
Y. Skourski,
M. Kläui,
M. Jourdan
Abstract:
The effects of current induced Néel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible Néel vector…
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The effects of current induced Néel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible Néel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $μ$m is demonstrated. Our direct microscopical observations are compared to and fully consistent with anisotropic magnetoresistance effects previously attributed to current induced Néel vector switching in Mn$_2$Au.
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Submitted 6 February, 2019;
originally announced February 2019.
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Tuning the perpendicular magnetic anisotropy, spin Hall switching current density and domain wall velocity by submonolayer insertion in Ta / CoFeB / MgO heterostructures
Authors:
Satya Prakash Bommanaboyena,
Markus Meinert
Abstract:
By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the spin Hall switching current density and its dependence on the external magnetic field. Despite a rather small effective spin Hall angle of…
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By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the spin Hall switching current density and its dependence on the external magnetic field. Despite a rather small effective spin Hall angle of $θ_\mathrm{SH} \approx -0.07$, we obtain switching current densities as low as $2 \times 10^{10}$ A/m$^2$ with a 2 Å Au interlayer. We find that the Dzyaloshinskii-Moriya interaction parameter $D$ is reduced with Au or Pd interlayers, and the perpendicular anisotropy field is reduced by an order of magnitude with the Pd interlayer. The dependence of the switching current density on the current pulse width is quantitatively explained with a domain wall nucleation and propagation model. Interface engineering is thus found to be a suitable route to tailor the current-induced magnetization switching properties of magnetic heterostructures.
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Submitted 13 May, 2017;
originally announced May 2017.
