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Integrated ultrafast all-optical polariton transistors
Authors:
Pietro Tassan,
Darius Urbonas,
Bartos Chmielak,
Jens Bolten,
Thorsten Wahlbrink,
Max C. Lemme,
Michael Forster,
Ullrich Scherf,
Rainer F. Mahrt,
Thilo Stöferle
Abstract:
The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to re…
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The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to realize all-optical switches has, so far, precluded the fabrication of scalable architectures. Recently, microcavities in the strong light-matter interaction regime enabled all-optical transistors which, when used with an embedded organic material, can operate even at room temperature with sub-picosecond switching times, down to the single-photon level. However, the vertical cavity geometry prevents complex circuits with on-chip coupled transistors. Here, by leveraging silicon photonics technology, we show exciton-polariton condensation at ambient conditions in micrometer-sized, fully integrated high-index contrast grating microcavities filled with an optically active polymer. By coupling two resonators and exploiting seeded polariton condensation, we demonstrate ultrafast all-optical transistor action and cascadability. Our experimental findings open the way for scalable, compact all-optical integrated logic circuits that could process optical signals two orders of magnitude faster than their electrical counterparts.
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Submitted 2 April, 2024;
originally announced April 2024.
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CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors
Authors:
Daniel S. Schneider,
Leonardo Lucchesi,
Eros Reato,
Zhenyu Wang,
Agata Piacentini,
Jens Bolten,
Damiano Marian,
Enrique G. Marin,
Aleksandra Radenovic,
Zhenxing Wang,
Gianluca Fiori,
Andras Kis,
Giuseppe Iannaccone,
Daniel Neumaier,
Max C. Lemme
Abstract:
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal…
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Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.
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Submitted 5 April, 2024; v1 submitted 3 April, 2023;
originally announced April 2023.
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Phase mask pinholes as spatial filters for laser interference lithography
Authors:
Giovanna Capraro,
Maxim Lipkin,
Michael Möller,
Jens Bolten,
Max C. Lemme
Abstract:
Laser resonators have outputs with Gaussian spatial beam profiles. In laser interference lithography (LIL), using such Gaussian shaped beams leads to an inhomogeneous exposure of the substrate. As a result, dimensions of lithography defined features vary significantly across the substrate. In most LIL setups, pinholes are used as filters to remove optical noise. Following a concept proposed by Har…
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Laser resonators have outputs with Gaussian spatial beam profiles. In laser interference lithography (LIL), using such Gaussian shaped beams leads to an inhomogeneous exposure of the substrate. As a result, dimensions of lithography defined features vary significantly across the substrate. In most LIL setups, pinholes are used as filters to remove optical noise. Following a concept proposed by Hariharan et. al. a phase mask can be added to these pinholes. In theory, this modification results in a more uniform beam profile, and, if applied as spatial filters in LIL, in improved exposure and hence feature size uniformity. Here, we report on the first successful fabrication of such elements and demonstrate their use in an LIL setup to reduce feature dimension variations from 47.2% to 27.5% using standard and modified pinholes, respectively.
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Submitted 17 November, 2022;
originally announced November 2022.
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AFM-based Hamaker Constant Determination with Blind Tip Reconstruction
Authors:
Benny Ku,
Ferdinandus van de Wetering,
Jens Bolten,
Bart Stel,
Mark A. van de Kerkhof,
Max C. Lemme
Abstract:
Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle con…
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Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle contamination is treated as a particle-plane problem in which surface roughness and the interacting materials have major influences. For this purpose, we perform vacuum atomic force microscopy (AFM) contact measurements to quantify the van der Waals (vdW) forces between tip and sample. We introduce this as a vacuum AFM-based methodology that combines numerical Hamaker theory and Blind Tip Reconstruction (BTR). We have determined the Hamaker constants of $15x10^{-20} J$ and $13x10^{-20} J$ for the material systems of a silicon (Si) tip with both aluminum oxide ($Al_{2}O_{3}$) and native silicon dioxide ($SiO_{2}$) on Si substrates, respectively. Our methodology allows an alternative, quick and low-cost approach to characterize the Hamaker constant within the right order of magnitude for any material combination.
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Submitted 14 August, 2022;
originally announced August 2022.
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Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
Authors:
Sebastian Lukas,
Oliver Hartwig,
Maximilian Prechtl,
Giovanna Capraro,
Jens Bolten,
Alexander Meledin,
Joachim Mayer,
Daniel Neumaier,
Satender Kataria,
Georg S. Duesberg,
Max C. Lemme
Abstract:
Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermal…
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Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications.
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Submitted 8 April, 2021;
originally announced April 2021.
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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Authors:
Piotr J Cegielski,
Anna Lena Giesecke,
Stefanie Neutzner,
Caroline Porschatis,
Marina Gandini,
Daniel Schall,
Carlo AR Perini,
Jens Bolten,
Stephan Suckow,
Satender Kataria,
Bartos Chmielak,
Thorsten Wahlbrink,
Annamaria Petrozza,
Max C Lemme
Abstract:
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through cost…
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Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
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Submitted 18 July, 2019;
originally announced July 2019.
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Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications
Authors:
Piotr Jacek Cegielski,
Jens Bolten,
Jung Wuk Kim,
Florian Schlachter,
Christoph Nowak,
Thorsten Wahlbrink,
Anna Lena Giesecke,
Max Christian Lemme
Abstract:
In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp…
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In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp distortions and alignment precision of this mix & match approach. By aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate pattern distortions of order of $3 μm$ over 6 inch wafer area, overlay accuracy better than $1.2 μm$ has been demonstrated. This result can partially be attributed to the flexible SCIL stamp which compensates deformations caused by the presence of particles which would otherwise significantly reduce the alignment precision.
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Submitted 13 June, 2018;
originally announced August 2018.
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Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication
Authors:
Piotr Jacek Cegielski,
Stefanie Neutzner,
Caroline Porschatis,
Holger Lerch,
Jens Bolten,
Stephan Suckow,
Ajay Ram Srimath Kandada,
Bartos Chmielak,
Annamaria Petrozza,
Thorsten Wahlbrink,
Anna Lena Giesecke
Abstract:
Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, l…
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Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used followed by indirect structuring of the perovskite waveguide. We embed methylammonium lead tri-iodide (MAPbI3) in a pre-patterned race-track microresonator and couple the emitted light to an integrated photonic waveguide. We clearly observe the build-up of spectrally narrow lasing modes at room temperature upon a pump threshold fluence of $19.6 μJcm^{-2}$. Our results evidence the possibility of on-chip lasers based on metal-halide perovskites with industry relevance on a commercially available dielectric photonic platform, which is a step forward towards low-cost integrated photonic devices.
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Submitted 4 July, 2017;
originally announced July 2017.
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Reflective Arrayed Waveguide Grating with Sagnac Loop Reflectors in Silicon-on-Insulator with Gaussian Pass-band
Authors:
Bernardo Gargallo,
Pascual Muñoz,
Rocío Baños,
Anna L. Giesecke,
Jens Bolten,
Thorsten Wahlbrink,
Herbert Kleinjans
Abstract:
In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die.
In this paper the experimental demonstration of a Silicon-on-Insulator Reflective Arrayed Waveguide Grating (R-AWG) is reported. The device employs one Sagnac loop mirror per arm in the array, built with a 1x2 input/outputs, 50:50 splitting ratio, Multimode Interference coupler, for total reflection. The spectral responses obtained are compared to those of regular AWGs fabricated in the same die.
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Submitted 30 March, 2014;
originally announced March 2014.
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Mobility in Graphene Double Gate Field Effect Transistors
Authors:
M. C. Lemme,
T. J. Echtermeyer,
M. Baus,
B. N. Szafranek,
J. Bolten,
M. Schmidt,
T. Wahlbrink,
H. Kurz
Abstract:
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mob…
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In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.
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Submitted 29 September, 2008;
originally announced September 2008.
